HFA15TB60S [INFINEON]
ULTRAFAST,SOFT RECOVERY DIODE; 超快，软恢复二极管
| 型号： | HFA15TB60S |
| 厂家： | 
Infineon |
| 描述： | ULTRAFAST,SOFT RECOVERY DIODE |
| 文件： | 总7页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20615 rev. B 11/03
HFA15TB60S
TM
HEXFRED
Ultrafast, Soft Recovery Diode
Features
Base
Cathode
2
VR = 600V
VF = 1.7V
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
Qrr * = 84nC
• Specified at Operating Conditions
Benefits
di(rec)M/dt * = 188A/µs
3
1
Anode
N/C
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
* 125°C
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA15TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60S is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
D2 Pak
Absolute Maximum Ratings
Parameter
Max.
600
15
150
60
74
29
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
IF @ TC = 100°C
IFSM
IFRM
A
PD @ TC = 25°C
W
°C
PD @ TC = 100°C
TJ
-55 to +150
TSTG
Storage Temperature Range
1
www.irf.com
HFA15TB60S
Bulletin PD-20615 rev. B 11/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600 ––– –––
––– 1.3 1.7
––– 1.5 2.0
––– 1.2 1.6
V
IR = 100µA
IF = 15A
IF = 30A
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 15A, TJ = 125°C
VR = VR Rated
––– 1.0
––– 400 1000
––– 25 50
10
IRM
Max Reverse Leakage Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
CT
LS
Junction Capacitance
Series Inductance
pF
nH
VR = 200V
Measured lead to lead 5mm from
package body
––– 8.0 –––
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Reverse Recovery Time
See Fig. 5
Min. Typ. Max. Units
Test Conditions
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
––– 23 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 50
60
ns TJ = 25°C
TJ = 125°C
––– 105 120
––– 4.5 6.0
IF = 15A
VR = 200V
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
––– 6.5
10
––– 84 180
––– 241 600
––– 188 –––
––– 160 –––
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
See Fig. 8
Thermal - Mechanical Characteristics
Parameter
Min.
Typ.
––––
––––
––––
2.0
Max.
300
1.7
80
––––
––––
Units
Tlead
RthJC
RthJA
Wt
c
d
Lead Temperature
––––
––––
––––
––––
––––
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
K/W
g
(oz)
0.07
c
d
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
2
www.irf.com
HFA15TB60S
Bulletin PD-20615 rev. B 11/03
100
10
1
10000
1000
100
10
T = 150°C
J
T = 125°C
J
1
T = 150°C
J
0.1
T = 25°C
J
T = 125°C
J
A
0.01
0
200
400
600
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T = 25°C
J
A
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Forward Voltage Drop - V
(V)
FM
A
10
Fig. 1 - Maximum Forward Voltage Drop
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
Fig. 3 - Typical Junction CapRacitance vs.
Reverse Voltage
10
1
0.1
D = 0.50
0.20
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
Notes:
1. Duty factor D = t / t
(THERMAL RESPONSE)
1
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA15TB60S
Bulletin PD-20615 rev. B 11/03
25
20
15
10
5
100
80
60
40
20
VR = 200V
TJ = 125°C
TJ = 25°C
I
I
= 30A
= 15A
= 5.0A
F
F
I
F
I
F
I
F
F
= 30A
= 15A
= 5.0A
I
VR = 200V
TJ = 125°C
TJ = 25°C
A
A
0
100
0
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
800
10000
VR = 200V
TJ = 125°C
VR = 200V
TJ = 125°C
TJ = 25°C
TJ = 25°C
700
I
I
= 30A
F
F
600
500
400
300
200
100
0
= 15A
= 5.0A
I
F
I
I
= 30A
= 15A
= 5.0A
F
F
1000
I
F
A
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
www.irf.com
HFA15TB60S
Bulletin PD-20615 rev. B 11/03
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
www.irf.com
5
HFA15TB60S
Bulletin PD-20615 rev. B 11/03
Outline Table
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
4.78 (0.19)
0.55 (0.02)
2.61 (0.10)
2.32 (0.09)
8.89 (0.35)
REF.
0.46 (0.02)
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
2X
0.69 (0.27)
1
3
4.57 (0.18)
8.89 (0.35)
4.32 (0.17)
17.78 (0.70)
2
0.61 (0.02) MAX.
5.08 (0.20) REF.
3.81 (0.15)
2.08 (0.08)
2X
2.54 (0.10)
2X
Conforms to JEDEC Outline D2PAK
Dimensions in millimeters and inches
Part Marking Information
EXAMPLE: THIS IS AN HFA15TB60S
PART NUMBER
(K)
INTERNATIONAL
RECTIFIER LOGO
HFA15TB60S
5K3A
9712
(A)
ASSEMBLY
LOT CODE
DATE CODE (YYWW)
YY = YEAR
WW = WEEK
(N/C)
6
www.irf.com
HFA15TB60S
Bulletin PD-20615 rev. B 11/03
Tape & Reel Information
TRR
1.60 (0.063)
1.50 (0.059)
1.60 (0.063)
1.50 (0.059)
4.10 (0.161)
3.90 (0.153)
DIA.
0.368 (0.0145)
0.342 (0.0135)
FEED DIRECTION
1.85 (0.073)
1.65 (0.065)
11.60 (0.457)
11.40 (0.449)
24.30 (0.957)
15.42 (0.609)
23.90 (0.941)
15.22 (0.601)
TRL
1.75 (0.069)
DIA.
10.90 (0.429)
10.70 (0.421)
1.25 (0.049)
16.10 (0.634)
15.90 (0.626)
4.72 (0.186)
4.52 (0.178)
FEED DIRECTION
13.50 (0.532)
12.80 (0.504)
26.40 (1.039)
24.40 (0.961)
DIA.
SMD-220 Tape & Reel
When ordering, indicate the part
number, part orientation, and the
quantity. Quantities are in multiples
of 800 pieces per reel for both
TRL and TRR.
60 (2.362)
DIA. MIN.
360 (14.173)
DIA. MAX.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/03
www.irf.com
7
相关型号：
HFA15TB60STRRPBF
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
VISHAY
©2020 ICPDF网 联系我们和版权申明