HFA16PB120PBF [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA16PB120PBF |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总6页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95683A
HFA16PB120PbF
HEXFREDTM
Ultrafast,SoftRecoveryDiode
BASE
CATHODE
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 16A
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
4
Qrr (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
2
3
1
ANODE
2
CATHODE
di(rec)M/dt (typ.)* = 76A/µs
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA16PB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
TO-247AC(Modified)
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
1200
V
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
16
190
64
A
IFRM
PD @ TC = 25°C
151
60
W
°C
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
* 125°C
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11/2/04
HFA16PB120PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
1200
V
V
IR = 100µA
2.5 3.0
3.2 3.93
2.3 2.7
0.75 20
375 2000
IF = 16A
See Fig. 1
See Fig. 2
Max Forward Voltage
IF = 32A
IF = 16A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
27
40
pF
nH
Measured lead to lead 5mm from
package body
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
Reverse Recovery Time
30
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
90 135
164 245
ns TJ = 25°C
See Fig. 5, 10
trr2
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 16A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 6
5.8
8.3
10
15
A
nC
Reverse Recovery Charge
See Fig. 7
260 675
680 1838
120
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
76
See Fig. 8
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
Tlead
Lead Temperature
300
0.83
80
°C
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
thJC
K/W
R
R
thJA
0.50
2.0
CS
th
g
Weight
Wt
0.07
(oz)
6.0
5.0
12
10
Kg-cm
lbfin
Mounting Torque
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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HFA16PB120PbF
100
10
1
1000
100
10
T = 150˚C
J
T = 125˚C
J
1
T = 25˚C
J
0.1
0.01
A
0
200
400
600
800
1000
1200
T
= 150˚C
= 125˚C
Reverse Current - VR (V)
J
T
Fig. 2- Typical Reverse Current vs. Reverse
J
T
J
=
25˚C
Voltage
1000
100
10
1
T
= 25˚C
J
0.1
0
2
4
6
8
A
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
10000
vs.InstantaneousForwardCurrent
Reverse Current - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
ReverseVoltage
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
P
DM
D = 0.01
Single Pulse
0.1
t
1
t
(Thermal Resistance)
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
J
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFA16PB120PbF
30
25
20
15
10
5
270
V R= 200V
T J = 125˚C
220
170
120
70
T J
=
25˚C
If = 16 A
If = 8 A
If = 16 A
If = 8 A
VR = 200V
TJ = 125˚C
TJ
= 25˚C
20
100
0
100
1000
1000
di / dt (A/µs)
di / dt (A/µs)
f
f
Fig. 6 - Typical Recovery Current vs. dif/dt,
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(perLeg)
(perLeg)
10000
1600
V R = 200V
T J = 125˚C
V R= 200V
T J = 125˚C
1400
1200
1000
800
600
400
200
0
T J
= 25˚C
T J
= 25˚C
If = 16A
If = 8A
1000
100
10
If = 16A
If = 8A
100
1000
100
1000
di / dt (A/µs)
di / dt (A/µs)
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt,
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(perLeg)
(perLeg)
4
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HFA16PB120PbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
0.01
Ω
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
4. Qrr - Area under curve defined by trr
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
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HFA16PB120PbF
Conforms to JEDEC Outline TO-247AC(Modified)
Dimensions in millimeters and inches
Note: Marking "P" indicates Lead-Free
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
6
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