HFA25TB60PBF [INFINEON]
Ultrasfast, Soft Recovery Diode; Ultrasfast ，软恢复二极管
| 型号： | HFA25TB60PBF |
| 厂家： | 
Infineon |
| 描述： | Ultrasfast, Soft Recovery Diode |
| 文件： | 总6页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95741
HFA25TB60PbF
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
BASE
CATHODE
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 25A
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
4
Very Low Qrr
Qrr (typ.)= 112nC
IRRM = 10A
Specified at Operating Conditions
Lead-Free
2
trr(typ.) = 23ns
Benefits
3
1
ANODE
2
CATHODE
di(rec)M/dt (typ.) = 250A/µs
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
TO-220AC
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
600
V
IF @ TC = 100°C
25
IFSM
225
100
125
50
A
IFRM
PD @ TC = 25°C
C
PD @ TC = 100°C
TJ
W
-55 to +150
TSTG
Storage Temperature Range
* 125°C
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10/19/04
HFA25TB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
V
IR = 100µA
F = 25A
IF = 50A
1.3 1.7
1.5 2.0
1.3 1.7
I
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 25A, TJ = 125°C
VR = VR Rated
1.5
20
IRM
CT
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
µA
pF
nH
600 2000
55 100
TJ = 125°C, VR = 0.8 x VR RatedD Rated
VR = 200V
See Fig. 3
Measured lead to lead 5mm from
package body
LS
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
Reverse Recovery Time
23
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
50
75
ns TJ = 25°C
TJ = 125°C
See Fig. 5, 6 & 16
trr2
105 160
IF = 25A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 7& 8
4.5
8.0
10
15
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
Reverse Recovery Charge
See Fig. 9 & 10
112 375
420 1200
250
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
See Fig. 11 & 12
A/µs
di(rec)M/dt2 During tb
160
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
T
Lead Temperature
300
1.0
80
°C
lead
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
JC
th
th
th
K/W
JA
0.5
2.0
CS
g
Weight
Wt
0.07
(oz)
6.0
5.0
12
10
Kg-cm
lbfin
Mounting Torque
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
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HFA25TB60PbF
10000
1000
100
10
100
10
1
T = 150°C
J
T = 125°C
J
1
T = 150°C
J
0.1
T = 25°C
J
T = 125°C
J
A
0.01
T = 25°C
J
0
100
200
300
400
500
600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1000
T = 25°C
J
100
A
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V
(V)
FM
A
10
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
D = 0.50
0.20
P
2
DM
0.10
0.1
t
1
0.05
t
2
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFA25TB60PbF
140
120
100
VR = 200V
TJ = 125°C
TJ = 25°C
30
25
20
15
10
5
VR = 200V
TJ = 125°C
TJ = 25°C
I
I
I
= 50A
= 25A
= 10A
F
F
F
I
I
I
= 50A
= 25A
= 10A
F
F
80
60
40
20
F
A
A
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
1400
10000
VR = 200V
TJ = 125°C
VR = 200V
TJ = 125°C
TJ = 25°C
TJ = 25°C
1200
1000
I
I
I
= 50A
= 25A
= 10A
F
F
F
800
600
400
200
0
I
F
I
F
I
F
= 50A
= 25A
= 10A
1000
A
A
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
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HFA25TB60PbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
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HFA25TB60PbF
TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: T HI S IS A H F A06T B 120
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
P = LEAD-FREE
YEAR 1 = 2001
WEE K 19
ASSEMBLY
LOT CODE
LINE C
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A HFA06TB120
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
YEAR 1 = 2001
WEEK 19
AS S E MB L Y
LOT CODE
P = LEAD-FREE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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