HFA32PA120C [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA32PA120C |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD -2.360 rev. B 05/01
HFA32PA120C
TM
HEXFRED
Ultrafast,SoftRecoveryDiode
perLeg
VR = 1200V
VF(typ.) = 2.3V
IF(AV) = 16A
Qrr (typ.)=260nC
Features
2
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
1
3
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA32PA120C is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA32PA120C
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
TO-247AC
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter
Max
1200
16
190
64
151
60
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
A
°C
W
-55 to +150
TSTG
Storage Temperature Range
* 125°C
www.irf.com
1
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
IR = 100µA
IF = 16A
F = 32A
VBR
VFM
Cathode Anode Breakdown Voltage
1200
V
V
2.5 3.0
3.2 3.93
2.3 2.7
0.75 20
375 2000
See Fig. 1
Max Forward Voltage
I
IF = 16A, TJ = 125°C
VR = VR Rated
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 2
IRM
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
µA
pF
nH
CT
LS
27
40
VR = 200V
See Fig. 3
Measured lead to lead 5mm from
package body
8.0
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Reverse Recovery Time
See Fig. 5, 10
Min Typ Max Units
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
trr
30
trr1
90 135
164 245
5.8 10
8.3 15
260 675
680 1838
120
ns
trr2
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 16A
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
A
VR = 200V
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
76
See Fig. 8
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
300
0.83
80
Units
Tlead
!
Lead Temperature
°C
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
thJC
thJA
thCS
"
#
K/W
0.50
2.0
0.07
g
(oz)
Wt
Weight
6.0
5.0
12
10
Kg-cm
lbf•in
Mounting Torque
!
"
#
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
100
10
1
1000
100
10
T
= 150˚C
J
T
= 125˚C
J
1
T
=
25˚C
J
0.1
0.01
A
0
200
400
600
800
1000
1200
T
= 150˚C
= 125˚C
Reverse Current - VR (V)
J
T
Fig. 2 - Typical Reverse Current vs. Reverse
J
T
J
=
25˚C
Voltage
1000
100
T
= 25˚C
J
10
1
0.1
0
2
4
6
8
A
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
10000
vs. Instantaneous Forward Current
Reverse Current - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
0.1
Single Pulse
(Thermal Resistance)
t
1
t
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
J
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
30
25
20
15
10
5
270
V R= 200V
T J = 125˚C
220
T J
=
25˚C
If = 16 A
If = 8 A
If = 16 A
If = 8 A
170
120
70
VR = 200V
TJ = 125˚C
TJ
= 25˚C
20
100
0
100
1000
1000
di / dt (A/µs)
di / dt (A/µs)
f
f
Fig. 6 - Typical Recovery Current vs. dif/dt,
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(per Leg)
(per Leg)
10000
1600
V R = 200V
T J = 125˚C
V R= 200V
T J = 125˚C
1400
T J
= 25˚C
T J
= 25˚C
1200
1000
800
600
400
200
0
If = 16A
If = 8A
1000
100
10
If = 16A
If = 8A
100
1000
100
1000
di / dt (A/µs)
di / dt (A/µs)
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt,
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(perLeg)
(perLeg)
4
www.irf.com
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
RRM
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
4. Qrr - Area under curve defined by trr
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
Ordering Information Table
Device Code
HF
A
32 PA 120
C
2
4
5
6
1
3
1
2
-
-
HexfredFamily
ProcessDesignator
A
B
= subs. elec. irrad.
= subs. Platinum
3
4
5
6
-
-
-
-
Current Rating
PackageOutline
VoltageRating
Configuration
(32 = 32A)
(PA = TO-247, 3 pins)
(120 = 1200V)
(C = CenterTapCommonCathode)
www.irf.com
5
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
Outline Table
3. 65 (0.144)
5.30 (0.209)
4.70 ( 0.185)
DIA.
15.90 (0.626)
15.30 (0.602)
3. 55 (0.139)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0.225)
5.30 ( 0.208)
2
20.30 (0.800)
19.70 (0.775)
5.50 ( 0.217)
4. 50 (0.177)
(2 PLCS.)
1
2
3
1
3
14. 80 ( 0.583)
14.20 (0.559)
4. 30 (0.170)
3. 70 (0.145)
2. 20 (0.087)
MAX.
2. 40 (0.095)
MAX.
1. 40 (0.056)
1. 00 (0.039)
0.80 ( 0.032)
0. 40 (0.213)
10. 94 ( 0.430)
10.86 (0.427)
ConformstoJEDECOutlineTO-247AC
Dimensions in millimeters and inches
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IRWORLDHEADQUARTERS: 233KansasSt., ElSegundo, California90245, USATel:(310)252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/01
6
www.irf.com
相关型号：
©2020 ICPDF网 联系我们和版权申明