HFA40HF60C [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA40HF60C |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91796
HFA40HF60C
Ultrafast, Soft Recovery Diode
PRELIMINARY
HEXFREDTM
Features
VR = 600V
(ISOLATEDBASE)
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
VF = 1.56V
Qrr = 270nC
di(rec)M/dt = 345 A/µs
ANODE COMMON ANODE
CATHODE
Description
HEXFREDTM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
SMD-1
Absolute Maximum Ratings (per Leg)
Parameter
D.C. Reverse Voltage
Max.
600
Units
V
VR
IF @ TC = 100°C
Continuous Forward Current
30
A
IFSM @ TC = 25°C Single Pulse Forward Current
150
PD @ TC = 25°C
Maximum Power Dissipation
Operating Junction and
63
W
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Thermal - Mechanical Characteristics
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
Max.
2.0
Units
RθJC
°C/W
g
2.6
—
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
www.irf.com
1
8/20/98
HFA40HF60C
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
Max Forward Voltage
600
—
—
—
—
—
—
—
—
—
—
—
—
—
24
2.8
—
1.56
1.92
1.51
10
V
IR = 250µA
IF = 15A
V
IF = 30A
See Fig. 1
IF = 15A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
See Fig. 2
See Fig. 3
1.0
36
mA TJ = 125°C, VR = 480V
pF VR = 200V
CT
LS
Junction Capacitance
Series Inductance
—
nH Measured from center of bond pad to
end of anode bonding wire
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr1
Reverse Recovery Time
—
—
—
—
—
—
—
—
54
88
ns TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
trr2
94 140
5.6 7.8
7.8 11.7
180 270
435 650
300 345
190 285
5
IF = 15A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
A
6
Reverse Recovery Charge
nC
7
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
8
Case Outline and Dimensions — SMD-1
Lead Assignments :
1 - Common Cathode
2, 3 - Anode
IR Case Style SMD-1
Dimensionsinmillimetersand(inches)
2
www.irf.com
HFA40HF60C
100
10
1
1000
100
T
= 150°C
= 125°C
J
T
J
10
1
0.1
T
=
25°C
J
T
= 150°C
= 125°C
J
0.01
0.001
0.0001
T
J
T
=
25°C
J
0
200
400
600
Reverse Voltage - V
(V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1000
T
= 25°C
J
100
0.0
1.0
2.0
3.0
4.0
Forward V oltage Drop - V
(V)
FM
10
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA40HF60C
100
10
1
150
VR = 200V
TJ = 125°C
TJ = 25°C
I
I
I
= 30A
= 15A
= 7.5A
F
F
F
120
I
I
I
= 30A
= 15A
= 7.5A
F
F
F
90
60
30
VR = 200V
TJ = 12 5°C
TJ = 25 °C
0
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt
Fig. 6 - Typical Recovery Current vs. dif/dt
10000
1200
VR = 200V
TJ = 12 5°C
TJ = 25 °C
I
I
I
= 30A
= 15A
= 7.5A
F
F
F
900
600
300
0
1000
100
I
= 7.5A
= 15A
F
F
I
I
= 30A
F
VR = 2 00V
TJ = 1 2 5°C
TJ = 2 5 °C
10
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
www.irf.com
HFA40HF60C
3
t
rr
I
F
t
t
a
b
0
REVERSE RECO VERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
RRM
RRM
5
di(rec)M /dt
I
RRM
0.01
Ω
0.75
L
= 70µH
1
di /dt
f
D .U .T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
IRFP250
and IRRM
dif/dt
trr X IRRM
AD JUST
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/98
www.irf.com
5
相关型号：
HFA40HF60CSCV
600V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package. - Screening Level TXV
INFINEON
HFA40HF60CSCX
600V 30A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package. - Screening Level TX
INFINEON
HFA40HF60PBF
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 600V V(RRM), Silicon, HERMETIC SEALED, SMD-1, 3 PIN
VISHAY
HFA45HC120CDPBF
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 28A, Silicon, HERMETIC SEALED PACKAGE-3
INFINEON
HFA45HC120CU
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 28A, Silicon, HERMETIC SEALED PACKAGE-3
INFINEON
HFA45HC120CUPBF
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 28A, Silicon, HERMETIC SEALED PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明