HYB25D256800BTL-5 [INFINEON]
256 Mbit Double Data Rate SDRAM; 256兆双倍数据速率SDRAM
| 型号： | HYB25D256800BTL-5 |
| 厂家： | 
Infineon |
| 描述： | 256 Mbit Double Data Rate SDRAM |
| 文件： | 总83页 (文件大小：3003K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet, Rev. 1.2, Feb. 2004
HYB25D256400B[T/C](L)
HYB25D256800B[T/C](L)
HYB25D256160B[T/C](L)
256 Mbit Double Data Rate SDRAM
DDR SDRAM
Memory Products
N e v e r s t o p t h i n k i n g .
Edition 2004-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet, Rev. 1.2, Feb. 2004
HYB25D256400B[T/C](L)
HYB25D256800B[T/C](L)
HYB25D256160B[T/C](L)
256 Mbit Double Data Rate SDRAM
DDR SDRAM
Memory Products
N e v e r s t o p t h i n k i n g .
HYB25D256400B[T/C](L), HYB25D256800B[T/C](L), HYB25D256160B[T/C](L)
Revision History:
Rev. 1.2
2004-02
Previous Version:
V1.1
2003-01
Page
Rev 1.2
All
Subjects (major changes since last revision)
Added Products HYB25D256800BT-5, HYB25D256160BT-5, HYB25D256400BC-5
Corrected AC Timing values in table 19 and 20 to be conform with Jedec
Editorial changes
62-66
All
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
techdoc.mp@infineon.com
Template: mp_a4_v2.2_2003-10-07.fm
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
3.1
3.2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Burst Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Extended Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DLL Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Bank/Row Activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Reads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Writes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.2.1
3.2.2
3.2.3
3.2.4
3.3
3.3.1
3.3.2
3.4
3.5
3.5.1
3.5.2
3.5.3
3.5.4
3.5.5
3.6
4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Normal Strength Pull-down and Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Weak Strength Pull-down and Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
4.1
4.2
4.3
4.4
4.4.1
IDD Current Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
5
6
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Data Sheet
5
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
256 Mbit Double Data Rate SDRAM
DDR SDRAM
HYB25D256400B[T/C](L)
HYB25D256800B[T/C](L)
HYB25D256160B[T/C](L)
1
Overview
1.1
Features
•
•
Double data rate architecture: two data transfers per clock cycle.
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the
receiver.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
DQS is edge-aligned with data for reads and is center-aligned with data for writes
Differential clock inputs (CK and CK)
Four internal banks for concurrent operation
Data mask (DM) for write data
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Burst Lengths: 2, 4, or 8
CAS Latency: 2, 2.5, 3
Auto Precharge option for each burst access
Auto Refresh and Self Refresh Modes
7.8 µs Maximum Average Periodic Refresh Interval (8K refresh)
2.5V (SSTL_2 compatible) I/O
VDDQ = 2.5 V ± 0.2 V (DDR200, DDR266, DDR333); VDDQ = 2.6 V ± 0.1 V (DDR400)
VDD = 2.5 V ± 0.2 V (DDR200, DDR266, DDR333); VDD = 2.6 V ± 0.1 V (DDR400)
P-TSOPII-66-1 package
P-TFBGA-60-2 package with 3 depopulated rows (12 mm × 8 mm2).
Table 1
Performance
Part Number Speed Code
-5
–6
-7F
–7
–8
Unit
—
Speed Grade
Component
DDR400B DDR333B DDR266 DDR266A DDR200
Module
PC3200-
3033
PC2700–
2533
PC2100- PC2100-
PC1600-
2022
—
2022
2033
max. Clock Frequency
@CL3
fCK3 200
166
166
133
–
–
–
MHz
MHz
MHz
@CL2.5 fCK2.5 166
@CL2 fCK2 133
143
133
143
133
125
100
1.2
Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.
It is internally configured as a quad-bank DRAM.
The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data
rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per
clock cycle at the I/O pins. A single read or write access for the 256Mb DDR SDRAM effectively consists of a single
2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-
clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver.
DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS
is edge-aligned with data for Reads and center-aligned with data for Writes.
Data Sheet
6
Rev. 1.2, 2004-02
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Overview
The 256Mb DDR SDRAM operates from a differential clock (CK and CK; the crossing of CK going HIGH and CK
going LOW is referred to as the positive edge of CK). Commands (address and control signals) are registered at
every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both
edges of DQS, as well as to both edges of CK.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration
of an Active command, which is then followed by a Read or Write command. The address bits registered
coincident with the Active command are used to select the bank and row to be accessed. The address bits
registered coincident with the Read or Write command are used to select the bank and the starting column location
for the burst access.
The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations. An Auto
Precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation,
thereby providing high effective bandwidth by hiding row precharge and activation time.
An auto refresh mode is provided along with a power-saving power-down mode. All inputs are compatible with the
JEDEC Standard for SSTL_2. All outputs are SSTL_2, Class II compatible.
Note:The functionality described and the timing specifications included in this data sheet are for the DLL Enabled
mode of operation.
Data Sheet
7
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Overview
Table 2
Ordering Information
Part Number 1)
Org. CAS-RCD-RP Clock CAS-RCD-RP Clock Speed
Package
Latencies
(MHz) Latencies
(MHz)
HYB25D256800BT(L)-5
HYB25D256160BT(L)-5
HYB25D256400BT(L)-6
HYB25D256800BT(L)-6
HYB25D256160BT(L)-6
HYB25D256400BT(L)-7
HYB25D256800BT(L)-7
HYB25D256160BT(L)-7
x8
3 - 3 - 3
200
166
2.5 - 3 - 3
2 - 3 - 3
166
DDR400B P-TSOPII-66-1
DDR333
×16 2.5 - 3 - 3
133
×4
×8
×16
×4
143
143
125
133
133
100
DDR266A
DDR266
DDR200
×8
×16
HYB25D256400BT(L)-7F ×4
HYB25D256800BT(L)-7F ×8
HYB25D256160BT(L)-7F ×16
2 - 2 - 2
HYB25D256400BT(L)-8
HYB25D256800BT(L)-8
HYB25D256160BT(L)-8
HYB25D256400BC(L)-5
HYB25D256400BC(L)-6
HYB25D256800BC(L)-6
HYB25D256160BC(L)-6
HYB25D256400BC(L)-7
HYB25D256800BC(L)-7
HYB25D256160BC(L)-7
×4
×8
×16
×4
3 - 3 - 3
200
166
2.5 - 3 - 3
2 - 3 - 3
166
133
DDR400B P-TFBGA-60-2
DDR333
×4
2.5 - 3 - 3
×8
×16
×4
143
143
125
133
DDR266A
DDR266
DDR200
×8
×16
HYB25D256400BC(L)-7F ×4
HYB25D256800BC(L)-7F ×8
HYB25D256160BC(L)-7F ×16
2 - 2 - 2
HYB25D256400BC(L)-8
HYB25D256800BC(L)-8
HYB25D256160BC(L)-8
×4
100
×8
×16
1) HYB: designator for memory components, 25D: DDR-I SDRAMs at Vddq=2.5V, 256: 256Mb density, 400/800/160: Product
variations x4, x8 and x16, B: Die revision B, C/T: Package type FBGA and TSOP, L: Low power version (optional) - these
components are specifically selected for low IDD6 Self Refresh currents.
Data Sheet
8
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Pin Configuration
2
Pin Configuration
1
2
3
7
8
9
1
2
3
7
8
9
VSSQ NC
VSS
A
B
C
D
E
F
VDD
NC VDDQ
VSSQ DQ7
VSS
A
B
C
D
E
F
VDD
DQ0 VDDQ
NC VDDQ DQ3
NC VSSQ NC
NC VDDQ DQ2
NC VSSQ DQS
DQ0 VSSQ NC
NC VDDQ NC
DQ1 VSSQ NC
NC VDDQ NC
NC VDDQ DQ6
NC VSSQ DQ5
NC VDDQ DQ4
NC VSSQ DQS
DQ1 VSSQ NC
DQ2 VDDQ NC
DQ3 VSSQ NC
NC VDDQ NC
VREF VSS
DM
CLK
CKE
A9
NC
WE
VDD
CAS
CS
NC
VREF VSS
DM
CLK
CKE
A9
NC
WE
VDD
CAS
CS
NC
CLK
A12
A11
A8
G
H
J
CLK
A12
A11
A8
G
H
J
RAS
BA1
RAS
BA1
BA0
BA0
A7
K
L
A0 A10/AP
A7
K
L
A0 A10/AP
A6
A5
A2
A1
A3
A6
A5
A2
A1
A3
A4
VSS
M
VDD
A4
VSS
M
VDD
( x 4 )
( x8 )
1
2
3
7
8
9
VSSQ DQ15 VSS
DQ14 VDDQ DQ13
DQ12 VSSQ DQ11
DQ10 VDDQ DQ9
DQ8 VSSQ UDQS
VREF VSS UDM
A
B
C
D
E
F
VDD
DQ0 VDDQ
DQ2 VSSQ DQ1
DQ4 VDDQ DQ3
DQ6 VSSQ DQ5
LDQS VDDQ DQ7
LDM VDD
NC
CLK
A12
A11
A8
CLK
CKE
A9
G
H
J
WE
RAS
BA1
CAS
CS
BA0
A7
K
L
A0 A10/AP
A6
A5
A2
A1
A3
A4
VSS
M
VDD
( x 16 )
Figure 1
Pin Configuration P-TFBGA-60-2 (Top View - see the balls through the package)
Data Sheet
9
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Pin Configuration
VDD
VDD
VDD
VSS
VSS
VSS
1
2
3
4
5
66
65
64
63
62
NC
VDDQ
NC
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ15
VSSQ
DQ7
VSSQ
NC
NC
DQ0
VDDQ
NC
VSSQ
NC
DQ14
DQ13
DQ0
VSSQ
NC
DQ6
DQ3
DQ1
VSSQ
NC
VDDQ
VDDQ
NC
VDDQ
NC
6
61
60
59
58
57
DQ12
DQ11
VSSQ
7
NC
DQ5
VSSQ
NC
NC
DQ2
VDDQ
NC
8
VDDQ
NC
VSSQ
NC
9
DQ10
10
DQ3
DQ1
VSSQ
NC
DQ6
VSSQ
DQ7
NC
DQ9
VDDQ
DQ4
VDDQ
DQ2
VDDQ
11
12
56
55
VSSQ
NC
DQ8
NC
NC
NC
13
14
15
16
17
18
19
20
54
53
52
51
50
49
48
47
NC
NC
NC
NC
VSSQ
UDQS
NC
VSSQ
DQS
NC
VSSQ
DQS
NC
VDDQ
NC
VDDQ
NC
VDDQ
LDQS
NC
VDD
NC
NC
NC
VDD
NC
NC
NC
VDD
VREF
VSS
VREF
VSS
VREF
VSS
NC
LDM
UDM
DM
DM
WE
CAS
WE
CAS
WE
CAS
CK
CK
CK
CK
CK
CK
21
22
23
46
45
44
RAS
RAS
RAS
CKE
CKE
CKE
CS
NC
CS
NC
CS
NC
NC
A12
NC
A12
NC
A12
24
25
43
42
BA0
BA1
BA0
BA1
BA0
BA1
A11
A9
A8
A11
A9
A8
A11
A9
A8
26
27
28
29
41
40
39
38
A10/AP
A10/AP
A10/AP
A7
A7
A7
A0
A1
A2
A0
A1
A2
A0
A1
A2
A6
A5
A6
A5
A6
A5
30
31
37
36
A3
A3
A3
A4
VSS
A4
VSS
A4
VSS
32
33
35
34
VDD
VDD
VDD
16Mb x 16
32Mb x 8
64Mb x 4
Figure 2
Pin Configuration P-TSOPII-66-1
Data Sheet
10
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Pin Configuration
Table 3
Symbol
CK, CK
Input/Output Functional Description
Type
Function
Input
Clock: CK and CK are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and negative
edge of CK. Output (read) data is referenced to the crossings of CK and CK
(both directions of crossing).
CKE
Input
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock
signals and device input buffers and output drivers. Taking CKE Low provides
Precharge Power-Down and Self Refresh operation (all banks idle), or Active
Power-Down (row Active in any bank). CKE is synchronous for power down
entry and exit, and for self refresh entry. CKE is asynchronous for self refresh
exit. CKE must be maintained high throughout read and write accesses. Input
buffers, excluding CK, CK and CKE are disabled during power-down. Input
buffers, excluding CKE, are disabled during self refresh.
CS
Chip Select: All commands are masked when CS is registered HIGH. CS
provides for external bank selection on systems with multiple banks. CS is
considered part of the command code. The standard pinout includes one CS
pin.
RAS, CAS, WE Input
Command Inputs: RAS, CAS and WE (along with CS) define the command
being entered.
DM
Input
Input
Input
Input Data Mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH coincident with that input data during a
Write access. DM is sampled on both edges of DQS. Although DM pins are
input only, the DM loading matches the DQ and DQS loading.
BA0, BA1
A0 – A12
Bank Address Inputs: BA0 and BA1 define to which bank an Active, Read,
Write or Precharge command is being applied. BA0 and BA1 also determines
if the mode register or extended mode register is to be accessed during a
MRS or EMRS cycle.
Address Inputs: Provide the row address for Active commands, and the
column address and Auto Precharge bit for Read/Write commands, to select
one location out of the memory array in the respective bank. A10 is sampled
during a Precharge command to determine whether the Precharge applies to
one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be
precharged, the bank is selected by BA0, BA1. The address inputs also
provide the op-code during a Mode Register Set command.
DQ
Input/Output
Input/Output
Data Input/Output: Data bus.
DQS
Data Strobe: Output with read data, input with write data. Edge-aligned with
read data, centered in write data. Used to capture write data.
NC
–
No Connect: No internal electrical connection is present.
DQ Power Supply: 2.5 V ± 0.2 V/ 2.6V ± 0.1V.
DQ Ground
VDDQ
VSSQ
VDD
Supply
Supply
Supply
Supply
Supply
Power Supply: 2.5 V ± 0.2 V / 2.6V ± 0.1V
Ground
VSS
VREF
SSTL_2 reference voltage: (VDDQ / 2)
Data Sheet
11
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Pin Configuration
CKE
CK
CK
CS
WE
CAS
RAS
Bank3
Bank2
Bank1
CK, CK
DLL
Mode
Registers
13
8192
Bank0
Memory
Array
Data
13
(8192 x 1024 x 8)
4
4
4
8
Sense Amplifiers
1
DQS
Generator
DQ0-DQ3,
DM
COL0
Mask
DQS
Input
Register
1
I/O Gating
DM Mask Logic
8
2
DQS
1
1
A0-A12,
BA0, BA1
Write
15
1
FIFO
1
&
8
2
8
1024
(x8)
2
Drivers
4
4
4
4
4
clk
clk
Column
Decoder
in
out
Data
10
COL0
CK,
CK
Column-Address
Counter/Latch
11
COL0
1
1
Figure 3
Notes:
Block Diagram (64Mb × 4)
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidirectional DQ and
DQS signals.
Data Sheet
12
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Pin Configuration
CKE
CK
CK
CS
WE
CAS
RAS
Bank3
Bank2
Bank1
CK, CK
DLL
Mode
Registers
13
8192
Bank0
Memory
Array
Data
13
(8192 x 512x 16)
8
8
8
16
Sense Amplifiers
1
DQS
Generator
DQ0-DQ7,
DM
COL0
Mask
DQS
Input
Register
1
I/O Gating
DM Mask Logic
16
2
DQS
1
1
A0-A12,
BA0, BA1
Write
15
1
FIFO
1
&
16
2
16
2
512
Drivers
(x16)
8
8
8
8
8
clk
clk
Column
Decoder
in
out
Data
9
COL0
CK,
CK
Column-Address
Counter/Latch
10
COL0
1
1
Figure 4
Notes:
Block Diagram (32Mb × 8)
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidirectional DQ and
DQS signals.
Data Sheet
13
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Pin Configuration
CKE
CK
CK
CS
WE
CAS
RAS
Bank3
Bank2
Bank1
CK, CK
DLL
Mode
Registers
13
8192
Bank0
Memory
Array
Data
13
(8192 x 256x 32)
16
16
16
32
Sense Amplifiers
1
DQS
Generator
DQ0-DQ15,
DM
COL0
Mask
DQS
Input
Register
1
I/O Gating
DM Mask Logic
32
2
LDQS, UDQS
1
1
A0-A11,
BA0, BA1
Write
15
1
FIFO
1
&
32
2
32
2
256
Drivers
(x32)
16
16
16
16
16
clk
clk
Column
Decoder
in
out
Data
8
COL0
CK,
CK
Column-Address
Counter/Latch
9
COL0
2
1
Figure 5
Notes:
Block Diagram (16Mb × 16)
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. UDM and LDM are unidirectional signals (input only), but is internally loaded to match the load of the
bidirectional DQ, UDQS and LDQS signals.
Data Sheet
14
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3
Functional Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268, 435, 456 bits.
The 256Mb DDR SDRAM is internally configured as a quad-bank DRAM.
The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data-
rate architecture is essentially a 2n prefetch architecture, with an interface designed to transfer two data words per
clock cycle at the I/O pins. A single read or write access for the 256Mb DDR SDRAM consists of a single 2n-bit
wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock
cycle data transfers at the I/O pins.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration
of an Active command, which is then followed by a Read or Write command. The address bits registered
coincident with the Active command are used to select the bank and row to be accessed (BA0, BA1 select the
bank; A0-A12 select the row). The address bits registered coincident with the Read or Write command are used
to select the starting column location for the burst access.
Prior to normal operation, the DDR SDRAM must be initialized. The following sections provide detailed infor-
mation covering device initialization, register definition, command descriptions and device operation.
3.1
Initialization
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than
those specified may result in undefined operation. The following criteria must be met:
No power sequencing is specified during power up or power down given the following criteria:
•
•
•
V
V
DD and VDDQ are driven from a single power converter output
TT meets the specification
A minimum resistance of 42 Ω limits the input current from the VTT supply into any pin and VREF tracks VDDQ/2
or the following relationship must be followed:
•
•
•
V
V
V
DDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V
TT is driven after or with VDDQ such that VTT < VDDQ + 0.3 V
REF is driven after or with VDDQ such that VREF < VDDQ + 0.3 V
The DQ and DQS outputs are in the High-Z state, where they remain until driven in normal operation (by a read
access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM
requires a 200µs delay prior to applying an executable command.
Once the 200µs delay has been satisfied, a Deselect or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a Precharge ALL command should be applied. Next a Mode
Register Set command should be issued for the Extended Mode Register, to enable the DLL, then a Mode
Register Set command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. 200 clock cycles are required between the DLL reset and any executable command. During the 200
cycles of clock for DLL locking, a Deselect or NOP command must be applied. After the 200 clock cycles, a
Precharge ALL command should be applied, placing the device in the “all banks idle” state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a Mode Register Set
command for the Mode Register, with the reset DLL bit deactivated (i.e. to program operating parameters without
resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
Data Sheet
15
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.2
Mode Register Definition
The Mode Register is used to define the specific mode of operation of the DDR SDRAM. This definition includes
the selection of a burst length, a burst type, a CAS latency, and an operating mode. The Mode Register is
programmed via the Mode Register Set command (with BA0 = 0 and BA1 = 0) and retains the stored information
until it is programmed again or the device loses power (except for bit A8, which is self-clearing).
Mode Register bits A0-A2 specify the burst length, A3 specifies the type of burst (sequential or interleaved), A4-
A6 specify the CAS latency, and A7-A12 specify the operating mode.
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these requirements results in unspecified operation.
MR
Mode Register Definition
(BA[1:0] = 00B)
A8 A7 A6
BA1
BA0
A12
A11
A10
A9
A5
A4
A3
A2
A1
A0
0
0
OPERATING MODE
CL
BT
BL
reg. addr
w
w
w
w
Field Bits Type Description
BL
[2:0]
w
Burst Length
Number of sequential bits per DQ related to one read/write command; see Chapter 3.2.1.
Note:All other bit combinations are RESERVED.
001 2
010 4
011 8
BT
CL
3
w
w
Burst Type
See Table 4 for internal address sequence of low order address bits; see Chapter 3.2.2.
0
1
Sequential
Interleaved
[6:4]
CAS Latency
Number of full clocks from read command to first data valid window; see Chapter 3.2.3.
Note:All other bit combinations are RESERVED.
010 2
011 (3.0 Optional, not covered by this data sheet)
101 2.5
110 1.5 for DDR200 components only
MODE [12:3] w
Operating Mode
Note:All other bit combinations are RESERVED.
0
Normal Operation
Data Sheet
16
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.2.1
Burst Length
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The
burst length determines the maximum number of column locations that can be accessed for a given Read or Write
command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst
length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column
address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the
starting location within the block. The programmed burst length applies to both Read and Write bursts.
3.2.2
Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Table 4.
Table 4
Burst Definition
Burst
Starting Column Address
Order of Accesses Within a Burst
Length
A2
A1
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Type = Sequential
Type = Interleaved
0-1
2
4
0-1
1-0
1-0
0
0
1
1
0
0
1
1
0
0
1
1
0-1-2-3
0-1-2-3
1-2-3-0
1-0-3-2
2-3-0-1
2-3-0-1
3-0-1-2
3-2-1-0
8
0
0
0
0
1
1
1
1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Data Sheet
17
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Notes:
1. For a burst length of two, A1-Ai selects the two-data-element block; A0 selects the first access within the block.
2. For a burst length of four, A2-Ai selects the four-data-element block; A0-A1 selects the first access within the
block.
3. For a burst length of eight, A3-Ai selects the eight-data- element block; A0-A2 selects the first access within
the block.
4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps
within the block.
3.2.3
Read Latency
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and
the availability of the first burst of output data. The latency can be programmed 2, 2.5 or 3 clocks. CAS latency of
1.5 is an optional feature on this device. If a Read command is registered at clock edge n, and the latency is m
clocks, the data is available nominally coincident with clock edge n + m (see Figure 6). Reserved states should
not be used as unknown operation or incompatibility with future versions may result.
Data Sheet
18
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.2.4
Operating Mode
The normal operating mode is selected by issuing a Mode Register Set Command with bits A7-A12 set to zero,
and bits A0-A6 set to the desired values. A DLL reset is initiated by issuing a Mode Register Set command with
bits A7 and A9-A12 each set to zero, bit A8 set to one, and bits A0-A6 set to the desired values. A Mode Register
Set command issued to reset the DLL should always be followed by a Mode Register Set command to select
normal operating mode.
All other combinations of values for A7-A12 are reserved for future use and/or test modes. Test modes and
reserved states should not be used as unknown operation or incompatibility with future versions may result.
CAS Latency = 2, BL = 4
CK
CK
Read
NOP
NOP
NOP
NOP
NOP
Command
CL=2
DQS
DQ
CAS Latency = 2.5, BL = 4
CK
CK
Read
NOP
NOP
NOP
NOP
NOP
Command
CL=2.5
DQS
DQ
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Don’t Care
Figure 6
Required CAS Latencies
Data Sheet
19
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.3
Extended Mode Register
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional
functions include DLL enable/disable, and output drive strength selection (optional). These functions are controlled
via the bits shown in the Extended Mode Register Definition. The Extended Mode Register is programmed via the
Mode Register Set command (with BA0 = 1 and BA1 = 0) and retains the stored information until it is programmed
again or the device loses power. The Extended Mode Register must be loaded when all banks are idle, and the
controller must wait the specified time before initiating any subsequent operation. Violating either of these
requirements result in unspecified operation.
3.3.1
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon
returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is
automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self
refresh operation. Any time the DLL is enabled, 200 clock cycles must occur before a Read command can be
issued. This is the reason 200 clock cycles must occur before issuing a Read or Write command upon exit of self
refresh operation.
3.3.2
Output Drive Strength
The normal drive strength for all outputs is specified to be SSTL_2, Class II. In addition this design version
supports a weak driver mode for lighter load and/or point-to-point environments which can be activated during
mode register set. I-V curves for the normal and weak drive strength are included in this document.
EMR
Extended Mode Register Definition
(BA[1:0] = 01B)
A8 A7 A6
BA1
BA0
A12
A11
A10
A9
A5
A4
A3
A2
A1
A0
0
1
OPERATING MODE
0
DS
DLL
reg. addr
w
w
w
w
Field
DLL
Bits
Type
Description
0
1
2
w
DLL Status
See Chapter 3.3.1.
0
1
Enabled
Disabled
DS
w
Drive Strength
See Chapter 3.3.2, Chapter 4.2 and Chapter 4.3.
0
1
Normal
Weak
0
w
w
0
must be set to 0
MODE
[12:3]
Operating Mode
Note:All other bit combinations are RESERVED.
0
Normal Operation
Data Sheet
20
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.4
Commands
Deselect
The Deselect function prevents new commands from being executed by the DDR SDRAM. The DDR SDRAM is
effectively deselected. Operations already in progress are not affected.
No Operation (NOP)
The No Operation (NOP) command is used to perform a NOP to a DDR SDRAM. This prevents unwanted
commands from being registered during idle or wait states. Operations already in progress are not affected.
Mode Register Set
The mode registers are loaded via inputs A0-A12, BA0 and BA1. See mode register descriptions in the Register
Definition section. The Mode Register Set command can only be issued when all banks are idle and no bursts are
in progress. A subsequent executable command cannot be issued until tMRD is met.
Active
The Active command is used to open (or activate) a row in a particular bank for a subsequent access. The value
on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-A12 selects the row. This row
remains active (or open) for accesses until a Precharge (or Read or Write with Auto Precharge) is issued to that
bank. A Precharge (or Read or Write with Auto Precharge) command must be issued and completed before
opening a different row in the same bank.
Read
The Read command is used to initiate a burst read access to an active (open) row. The value on the BA0, BA1
inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 8, j = don’t care] for × 16, [i = 9,
j = don’t care] for × 8 and [i = 9, j = 11] for × 4) selects the starting column location. The value on input A10
determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being accessed is
precharged at the end of the Read burst; if Auto Precharge is not selected, the row remains open for subsequent
accesses.
Write
The Write command is used to initiate a burst write access to an active (open) row. The value on the BA0, BA1
inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 9, j = don’t care] for × 8; where
[i = 9, j = 11] for × 4) selects the starting column location. The value on input A10 determines whether or not Auto
Precharge is used. If Auto Precharge is selected, the row being accessed is precharged at the end of the Write
burst; if Auto Precharge is not selected, the row remains open for subsequent accesses. Input data appearing on
the DQs is written to the memory array subject to the DM input logic level appearing coincident with the data. If a
given DM signal is registered low, the corresponding data is written to memory; if the DM signal is registered high,
the corresponding data inputs are ignored, and a Write is not executed to that byte/column location.
Precharge
The Precharge command is used to deactivate (close) the open row in a particular bank or the open row(s) in all
banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the Precharge
command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where
only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t
Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any Read or Write
commands being issued to that bank. A precharge command is treated as a NOP if there is no open row in that
bank, or if the previously open row is already in the process of precharging.
Data Sheet
21
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Auto Precharge
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but
without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction
with a specific Read or Write command. A precharge of the bank/row that is addressed with the Read or Write
command is automatically performed upon completion of the Read or Write burst. Auto Precharge is nonpersistent
in that it is either enabled or disabled for each individual Read or Write command. Auto Precharge ensures that
the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to
the same bank until the precharge (tRP) is completed. This is determined as if an explicit Precharge command was
issued at the earliest possible time, as described for each burst type in the Operation section of this data sheet.
Burst Terminate
The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most recently
registered Read command prior to the Burst Terminate command is truncated, as shown in the Operation section
of this data sheet.
Auto Refresh
Auto Refresh is used during normal operation of the DDR SDRAM and is analogous to CAS Before RAS (CBR)
Refresh in previous DRAM types. This command is nonpersistent, so it must be issued each time a refresh is
required.
The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care”
during an Auto Refresh command. The 1 Gb DDR SDRAM requires Auto Refresh cycles at an average periodic
interval of 7.8 µs (maximum).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight Auto Refresh commands can be posted in the system, meaning that the
maximum absolute interval between any Auto Refresh command and the next Auto Refresh command is 9 ×
7.8 µs (70.2 µs). This maximum absolute interval is short enough to allow for DLL updates internal to the DDR
SDRAM to be restricted to Auto Refresh cycles, without allowing too much drift in tAC between updates.
Self Refresh
The Self Refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is
powered down. When in the self refresh mode, the DDR SDRAM retains data without external clocking. The Self
Refresh command is initiated as an Auto Refresh command coincident with CKE transitioning low. The DLL is
automatically disabled upon entering Self Refresh, and is automatically enabled upon exiting Self Refresh (200
clock cycles must then occur before a Read command can be issued). Input signals except CKE (low) are “Don’t
Care” during Self Refresh operation.
The procedure for exiting self refresh requires a sequence of commands. CK (and CK) must be stable prior to CKE
returning high. Once CKE is high, the SDRAM must have NOP commands issued for tXSNR because time is
required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and
DLL requirements is to apply NOPs for 200 clock cycles before applying any other command.
Data Sheet
22
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Table 5
Truth Table 1a: Commands
Name (Function)
CS RAS CAS WE Address MNE
Notes
1)9)
Deselect (NOP)
H
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
X
H
H
H
L
X
X
NOP
NOP
1)9)2)
1)3)
No Operation (NOP)
Active (Select Bank And Activate Row)
Read (Select Bank And Column, And Start Read Burst)
Write (Select Bank And Column, And Start Write Burst)
Burst Terminate
Bank/Row ACT
Bank/Col Read
Bank/Col Write
1)4)
H
H
H
L
1)4)5)
1)8)6)
1)5)7)
1)6)7)8)
1)2)9)
L
H
H
L
L
X
BST
Precharge (Deactivate Row In Bank Or Banks)
Auto Refresh Or Self Refresh (Enter Self Refresh Mode)
Mode Register Set
L
Code
X
PRE
L
H
L
AR/ SR
L
L
Op-Code MRS
1) CKE is HIGH for all commands shown except Self Refresh.
2) Deselect and NOP are functionally interchangeable.
3) BA0-BA1 provide bank address and A0-A12 provide row address.
4) BA0, BA1 provide bank address; A0-Ai provide column address (where i = 8 for x16, i = 9 for x8 and 9, 11 for x4); A10
HIGH enables the Auto Precharge feature (nonpersistent), A10 LOW disables the Auto Precharge feature.
5) Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read
bursts with Auto Precharge enabled or for write bursts.
6) A10 LOW: BA0, BA1 determine which bank is precharged. A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t
Care”.
7) This command is AUTO REFRESH if CKE is HIGH; Self Refresh if CKE is LOW.
8) Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.
9) BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1
= 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to be
written to the selected Mode Register).
Table 6
Truth Table 1b: DM Operation
Name (Function)
Write Enable
Write Inhibit
DM
L
DQs
Valid
X
Notes
1)
1)
H
1) Used to mask write data; provided coincident with the corresponding data.
Data Sheet
23
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.5
Operations
3.5.1
Bank/Row Activation
Before any Read or Write commands can be issued to a bank within the DDR SDRAM, a row in that bank must
be “opened” (activated). This is accomplished via the Active command and addresses A0-A13, BA0 and BA1 (see
Figure 7), which decode and select both the bank and the row to be activated. After opening a row (issuing an
Active command), a Read or Write command may be issued to that row, subject to the tRCD specification. A
subsequent Active command to a different row in the same bank can only be issued after the previous active row
has been “closed” (precharged). The minimum time interval between successive Active commands to the same
bank is defined by tRC. A subsequent Active command to another bank can be issued while the first bank is being
accessed, which results in a reduction of total row-access overhead. The minimum time interval between
successive Active commands to different banks is defined by tRRD
.
CK
CK
HIGH
CKE
CS
RAS
CAS
WE
RA = row address.
BA = bank address.
RA
BA
A0-A12
BA0, BA1
Don’t Care
Figure 7
Activating a Specific Row in a Specific Bank
CK
CK
RD/WR
ACT
NOP
ACT
NOP
NOP
NOP
NOP
Command
A0-A12
ROW
BA x
ROW
BA y
COL
BA y
BA0, BA1
tRRD
tRCD
Don’t Care
Figure 8
tRCD and tRRD Definition
Data Sheet
24
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.5.2
Reads
Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read bursts are
initiated with a Read command, as shown on Figure 9 "Read Command" on Page 25.
The starting column and bank addresses are provided with the Read command and Auto Precharge is either
enabled or disabled for that burst access. If Auto Precharge is enabled, the row that is accessed starts precharge
at the completion of the burst, provided tRAS has been satisfied. For the generic Read commands used in the
following illustrations, Auto Precharge is disabled.
During Read bursts, the valid data-out element from the starting column address is available following the CAS
latency after the Read command. Each subsequent data-out element is valid nominally at the next positive or
negative clock edge (i.e. at the next crossing of CK and CK). Figure 10 "Read Burst: CAS Latencies (Burst
Length = 4)" on Page 26 shows general timing for each supported CAS latency setting. DQS is driven by the DDR
SDRAM along with output data. The initial low state on DQS is known as the read preamble; the low state
coincident with the last data-out element is known as the read postamble. Upon completion of a burst, assuming
no other commands have been initiated, the DQs goes High-Z. Data from any Read burst may be concatenated
with or truncated with data from a subsequent Read command. In either case, a continuous flow of data can be
maintained. The first data element from the new burst follows either the last element of a completed burst or the
last desired data element of a longer burst which is being truncated. The new Read command should be issued x
cycles after the first Read command, where x equals the number of desired data element pairs (pairs are required
by the 2n prefetch architecture). This is shown on Figure 11 "Consecutive Read Bursts: CAS Latencies (Burst
Length = 4 or 8)" on Page 27. A Read command can be initiated on any clock cycle following a previous Read
command. Nonconsecutive Read data is illustrated on Figure 12 "Non-Consecutive Read Bursts: CAS
Latencies (Burst Length = 4)" on Page 28. Full-speed Figure 13 "Random Read Accesses: CAS Latencies
(Burst Length = 2, 4 or 8)" on Page 29 within a page (or pages) can be performed as shown on Figure 13.
CK
CK
HIGH
CKE
CS
RAS
CAS
WE
x4: A0-A9, A11
x8: A0-A9
CA
x16: A0-A8
EN AP
A10
DIS AP
BA
CA = column address
BA = bank address
EN AP = enable Auto Precharge
DIS AP = disable Auto Precharge
BA0, BA1
Don’t Care
Figure 9
Read Command
Data Sheet
25
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CAS Latency = 2
CK
CK
Read
NOP
NOP
NOP
NOP
NOP
Command
Address
BA a,COL n
CL=2
DQS
DQ
DOa-n
CAS Latency = 2.5
CK
CK
Read
NOP
NOP
NOP
NOP
NOP
Command
Address
BA a,COL n
CL=2.5
DQS
DQ
DOa-n
Don’t Care
DO a-n = data out from bank a, column n.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Figure 10 Read Burst: CAS Latencies (Burst Length = 4)
Data Sheet
26
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CAS Latency = 2
CK
CK
Read
NOP
Read
NOP
NOP
NOP
Command
Address
BAa, COL n
BAa, COL b
CL=2
DQS
DQ
DOa-b
DOa-n
CAS Latency = 2.5
CK
CK
Read
NOP
Read
NOP
NOP
NOP
Command
Address
BAa, COL n
BAa,COL b
CL=2.5
DQS
DQ
DOa- n
DOa- b
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
When burst length = 4, the bursts are concatenated.
When burst length = 8, the second burst interrupts the first.
Don’t Care
3 subsequent elements of data out appear in the programmed order following DO a-n.
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Figure 11 Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)
Data Sheet
27
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CAS Latency = 2
CK
CK
Read
NOP
NOP
Read
NOP
NOP
Command
Address
BAa, COL n
BAa, COL b
CL=2
DQS
DQ
DO a-n
DOa- b
CAS Latency = 2.5
CK
CK
Read
NOP
NOP
Read
NOP
NOP
NOP
Command
Address
BAa, COL n
BAa, COL b
CL=2.5
DQS
DQ
DO a-n
DOa- b
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
3 subsequent elements of data out appear in the programmed order following DO a-n (and following DO a-b).
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Don’t Care
Figure 12 Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4)
Data Sheet
28
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CAS Latency = 2
CK
CK
Read
Read
BAa, COL x
CL=2
Read
Read
NOP
NOP
Command
Address
BAa, COL n
BAa, COL b
BAa, COL g
DQS
DQ
DOa-n
DOa-n'
DOa-x
DOa-x'
DOa-b
DOa-b’
DOa-g
CAS Latency = 2.5
CK
CK
Read
Read
Read
Read
NOP
NOP
Command
Address
BAa, COL n
BAa, COL x
BAa, COL b
BAa, COL g
CL=2.5
DQS
DQ
DOa-n
DOa-n'
DOa-x
DOa-x'
DOa-b
DOa-b’
DO a-n, etc. = data out from bank a, column n etc.
n' etc. = odd or even complement of n, etc. (i.e., column address LSB inverted).
Reads are to active rows in any banks.
Don’t Care
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Figure 13 Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8)
Data from any Read burst may be truncated with a Burst Terminate command, as shown on Figure 14
"Terminating a Read Burst: CAS Latencies (Burst Length = 8)" on Page 30. The Burst Terminate latency is
equal to the read (CAS) latency, i.e. the Burst Terminate command should be issued x cycles after the Read
command, where x equals the number of desired data element pairs.
Data from any Read burst must be completed or truncated before a subsequent Write command can be issued. If
truncation is necessary, the Burst Terminate command must be used, as shown on Figure 15 "Read to Write:
CAS Latencies (Burst Length = 4 or 8)" on Page 31. The example is shown for tDQSS (min). The tDQSS (max)
case, not shown here, has a longer bus idle time. tDQSS (min) and tDQSS (max) are defined in the section on Writes.
A Read burst may be followed by, or truncated with, a Precharge command to the same bank (provided that Auto
Precharge was not activated). The Precharge command should be issued x cycles after the Read command,
where x equals the number of desired data element pairs (pairs are required by the 2n prefetch architecture). This
is shown on Figure 16 "Read to Precharge: CAS Latencies (Burst Length = 4 or 8)" on Page 32 for Read
latencies of 2 and 2.5. Following the Precharge command, a subsequent command to the same bank cannot be
Data Sheet
29
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data
elements.
In the case of a Read being executed to completion, a Precharge command issued at the optimum time (as
described above) provides the same operation that would result from the same Read burst with Auto Precharge
enabled. The disadvantage of the Precharge command is that it requires that the command and address busses
be available at the appropriate time to issue the command. The advantage of the Precharge command is that it
can be used to truncate bursts.
CAS Latency = 2
CK
CK
Read
NOP
BST
NOP
NOP
NOP
Command
Address
BAa, COL n
CL=2
DQS
DQ
DOa-n
No further output data after this point.
DQS tristated.
CAS Latency = 2.5
CK
CK
Read
NOP
BST
NOP
NOP
NOP
Command
Address
BAa, COL n
CL=2.5
DQS
DQ
DOa-n
No further output data after this point.
DQS tristated.
DO a-n = data out from bank a, column n.
Cases shown are bursts of 8 terminated after 4 data elements.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal tAC, tDQSCK, and tDQSQ
Don’t Care
.
Figure 14 Terminating a Read Burst: CAS Latencies (Burst Length = 8)
Data Sheet
30
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CAS Latency = 2
CK
CK
Read
BST
NOP
Write
NOP
NOP
Command
Address
BAa, COL n
BAa, COL b
CL=2
tDQSS (min)
DQS
DQ
DI a-b
DOa-n
DM
CAS Latency = 2.5
CK
CK
Read
BST
NOP
NOP
Write
NOP
Command
Address
BAa, COL n
BAa, COL b
CL=2.5
tDQSS (min)
DQS
DQ
DOa-n
Dla-b
DM
DO a-n = data out from bank a, column n
.
DI a-b = data in to bank a, column b
1 subsequent elements of data out appear in the programmed order following DO a-n.
Data In elements are applied following Dl a-b in the programmed order, according to burst length.
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Don’t Care
Figure 15 Read to Write: CAS Latencies (Burst Length = 4 or 8)
Data Sheet
31
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CAS Latency = 2
CK
CK
Read
NOP
PRE
NOP
NOP
ACT
Command
tRP
BA a, COL n
BA a or all
BA a, ROW
Address
CL=2
DQS
DQ
DOa-n
CAS Latency = 2.5
CK
CK
Read
NOP
PRE
NOP
NOP
ACT
Command
tRP
BA a or all
BA a, COL n
BA a, ROW
Address
CL=2.5
DQS
DQ
DOa-n
DO a-n = data out from bank a, column n.
Cases shown are either uninterrupted bursts of 4 or interrupted bursts of 8.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal tAC, tDQSCK, and tDQSQ
.
Don’t Care
Figure 16 Read to Precharge: CAS Latencies (Burst Length = 4 or 8)
Data Sheet
32
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.5.3
Writes
Write bursts are initiated with a Write command, as shown on Figure 17 "Write Command" on Page 34.
The starting column and bank addresses are provided with the Write command, and Auto Precharge is either
enabled or disabled for that access. If Auto Precharge is enabled, the row being accessed is precharged at the
completion of the burst. For the generic Write commands used in the following illustrations, Auto Precharge is
disabled.
During Write bursts, the first valid data-in element is registered on the first rising edge of DQS following the write
command, and subsequent data elements are registered on successive edges of DQS. The Low state on DQS
between the Write command and the first rising edge is known as the write preamble; the Low state on DQS
following the last data-in element is known as the write postamble. The time between the Write command and the
first corresponding rising edge of DQS (tDQSS) is specified with a relatively wide range (from 75% to 125% of one
clock cycle), so most of the Write diagrams that follow are drawn for the two extreme cases (i.e. tDQSS (min) and
t
DQSS (max)). Figure 18 "Write Burst (Burst Length = 4)" on Page 35 shows the two extremes of tDQSS for a burst
of four. Upon completion of a burst, assuming no other commands have been initiated, the DQs and DQS enters
High-Z and any additional input data is ignored.
Data for any Write burst may be concatenated with or truncated with a subsequent Write command. In either case,
a continuous flow of input data can be maintained. The new Write command can be issued on any positive edge
of clock following the previous Write command. The first data element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated.
The new Write command should be issued x cycles after the first Write command, where x equals the number of
desired data element pairs (pairs are required by the 2n prefetch architecture). Figure 19 "Write to Write (Burst
Length = 4)" on Page 36 shows concatenated bursts of 4. An example of non-consecutive Writes is shown on
Figure 20 "Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4)" on Page 37. Full-speed random
write accesses within a page or pages can be performed as shown on Figure 21 "Random Write Cycles (Burst
Length = 2, 4 or 8)" on Page 38. Data for any Write burst may be followed by a subsequent Read command. To
follow a Write without truncating the write burst, tWTR (Write to Read) should be met as shown on Figure 22 "Write
to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4)" on Page 39.
Data for any Write burst may be truncated by a subsequent Read command, as shown in the figures on Figure 23
"Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8)" on Page 40 to Figure 25 "Write to Read:
Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8)" on Page 42. Note that only the data-in pairs
that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in must be
masked with DM, as shown in the diagrams noted previously.
Data for any Write burst may be followed by a subsequent Precharge command. To follow a Write without
truncating the write burst, tWR should be met as shown on Figure 26 "Write to Precharge: Non-Interrupting
(Burst Length = 4)" on Page 43.
Data for any Write burst may be truncated by a subsequent Precharge command, as shown in the figures on
Figure 27 "Write to Precharge: Interrupting (Burst Length = 4 or 8)" on Page 44 to Figure 29 "Write to
Precharge: Nominal DQSS (2-bit Write), Interrupting (Burst Length = 4 or 8)" on Page 46. Note that only the
data-in pairs that are registered prior to the tWR period are written to the internal array, and any subsequent data
in should be masked with DM. Following the Precharge command, a subsequent command to the same bank
cannot be issued until tRP is met.
In the case of a Write burst being executed to completion, a Precharge command issued at the optimum time (as
described above) provides the same operation that would result from the same burst with Auto Precharge. The
disadvantage of the Precharge command is that it requires that the command and address busses be available at
the appropriate time to issue the command. The advantage of the Precharge command is that it can be used to
truncate bursts.
Data Sheet
33
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
CK
CK
HIGH
CKE
CS
RAS
CAS
WE
x4: A0-A9, A11
x8: A0-A9
CA
x16: A0-A8
EN AP
A10
DIS AP
BA
CA = column address
BA = bank address
EN AP = enable Auto Precharge
DIS AP = disable Auto Precharge
BA0, BA1
Don’t Care
Figure 17 Write Command
Data Sheet
34
Rev. 1.2, 2004-02
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
CK
CK
Write
NOP
NOP
NOP
Command
Address
BA a, COL b
tDQSS (max)
DQS
DQ
Dla-b
DM
Minimum DQSS
T4
T1
T2
T3
CK
CK
Write
NOP
NOP
NOP
Command
Address
BA a, COL b
tDQSS (min)
DQS
DQ
Dla-b
DM
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
Don’t Care
Figure 18 Write Burst (Burst Length = 4)
Data Sheet
35
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
Write
NOP
NOP
NOP
Command
Address
BAa, COL b
BAa, COL n
tDQSS (max)
DQS
DQ
DI a-b
DI a-n
DM
Minimum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
Write
NOP
NOP
NOP
Command
Address
BA, COL b
BA, COL n
tDQSS (min)
DQS
DQ
DI a-b
DI a-n
DM
DI a-b = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Don’t Care
Each Write command may be to any bank.
Figure 19 Write to Write (Burst Length = 4)
Data Sheet
36
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
T1
T2
T3
T4
T5
CK
CK
Write
NOP
NOP
Write
NOP
Command
Address
BAa, COL b
BAa, COL n
tDQSS (max)
DQS
DQ
DI a-b
DI a-n
DM
DI a-b, etc. = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Don’t Care
Each Write command may be to any bank.
Figure 20 Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4)
Data Sheet
37
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
T5
CK
CK
Write
Write
Write
Write
Write
Command
Address
BAa, COL b
BAa, COL x
BAa, COL n
BAa, COL a
BAa, COL g
tDQSS (max)
DQS
DQ
DI a-b
DI a-b’
DI a-x
DI a-x’
DI a-n
DI a-n’
DI a-a
DI a-a’
DM
Minimum DQSS
T5
T1
T2
T3
T4
CK
CK
Write
Write
Write
Write
Write
Command
Address
BAa, COL b
BAa, COL x
BAa, COL n
BAa, COL a
BAa, COL g
tDQSS (min)
DQS
DQ
DI a-g
DI a-b
DI a-b’
DI a-x
DI a-x’
DI a-n
DI a-n’
DI a-a
DI a-a’
DM
DI a-b, etc. = data in for bank a, column b, etc.
b', etc. = odd or even complement of b, etc. (i.e., column address LSB inverted).
Each Write command may be to any bank.
Don’t Care
Figure 21 Random Write Cycles (Burst Length = 2, 4 or 8)
Data Sheet
38
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
Read
NOP
Command
tWTR
BAa, COL b
BAa, COL n
Address
CL = 2
tDQSS (max)
DQS
DQ
DI a-b
DM
Minimum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
Read
NOP
Command
tWTR
BAa, COL n
BAa, COL b
Address
CL = 2
tDQSS (min)
DQS
DQ
DI a-b
DM
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
tWTR is referenced from the first positive CK edge after the last data in pair.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands may be to any bank.
Don’t Care
Figure 22 Write to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4)
Data Sheet
39
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
Read
NOP
Command
tWTR
BAa, COL n
BAa, COL b
Address
CL = 2
tDQSS (max)
DQS
DQ
DIa- b
1
1
DM
Minimum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
Read
NOP
Command
tWTR
BAa, COL n
BAa, COL b
Address
CL = 2
tDQSS (min)
DQS
DQ
DI a-b
DM
1
1
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
1 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
Figure 23 Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8)
Data Sheet
40
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
Read
NOP
Command
tWTR
BAa, COL n
BAa, COL b
Address
CL = 2
tDQSS (min)
DQS
DQ
DI a-b
1
2
2
DM
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 3 data elements are written.
2 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last desired data in pair (not the last desired data in element)
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
1 = This bit is correctly written into the memory array if DM is low.
2 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
Figure 24 Write to Read: Minimum DQSS, Odd Number of Data (3-bit Write),
Interrupting (CAS Latency = 2; Burst Length = 8)
Data Sheet
41
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
Read
NOP
Command
tWTR
BAa, COL n
BAa, COL b
Address
CL = 2
tDQSS (nom)
DQS
DQ
DI a-b
DM
1
1
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last desired data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
1 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
Figure 25 Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8)
Data Sheet
42
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
NOP
PRE
Command
tWR
BA (a or all)
BA a, COL b
Address
tRP
tDQSS (max)
DQS
DQ
DI a-b
DM
Minimum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
NOP
tWR
PRE
Command
BA (a or all)
BA a, COL b
Address
tRP
tDQSS (min)
DQS
DQ
DI a-b
DM
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
tWR is referenced from the first positive CK edge after the last data in pair.
Don’t Care
A10 is Low with the Write command (Auto Precharge is disabled).
Figure 26 Write to Precharge: Non-Interrupting (Burst Length = 4)
Data Sheet
43
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Maximum DQSS
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
PRE
NOP
Command
tWR
BA (a or all)
BA a, COL b
Address
tRP
tDQSS (max)
2
DQS
DQ
DI a-b
1
1
3
3
DM
Minimum DQSS
T5 T6
T1
T2
T3
T4
CK
CK
Write
NOP
NOP
NOP
tWR
PRE
NOP
Command
BA a, COL b
BA (a or all)
Address
tRP
tDQSS (min)
2
DQS
DQ
DI a-b
3
3
1
1
DM
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
tWR is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst, for burst length = 8.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
Figure 27 Write to Precharge: Interrupting (Burst Length = 4 or 8)
Data Sheet
44
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
PRE
NOP
Command
tWR
BA a, COL b
BA (a or all)
Address
tRP
tDQSS (min)
2
DQS
DQ
DI a-b
1
1
3
4
4
DM
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 1 data element is written.
tWR is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = This bit is correctly written into the memory array if DM is low.
4 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
Figure 28 Write to Precharge: Minimum DQSS, Odd Number of Data (1-bit Write), Interrupting (Burst
Length = 4 or 8)
Data Sheet
45
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
T1
T2
T3
T4
T5
T6
CK
CK
Write
NOP
NOP
NOP
PRE
NOP
Command
tWR
BA a, COL b
BA (a or all)
Address
tRP
tDQSS (nom)
2
DQS
DQ
DI a-b
3
3
1
1
DM
DI a-b = Data In for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
WR is referenced from the first positive CK edge after the last desired data in pair.
t
The Precharge command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
Figure 29 Write to Precharge: Nominal DQSS (2-bit Write), Interrupting (Burst Length = 4 or 8)
Data Sheet
46
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.5.4
Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access some specified time (tRP) after the Precharge command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
CK
CK
HIGH
CKE
CS
RAS
CAS
WE
A0-A9, A11, A12
All Banks
A10
One Bank
BA
BA0, BA1
BA = bank address
(if A10 is Low, otherwise Don’t Care).
Don’t Care
Figure 30 Precharge Command
Data Sheet
47
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.5.5
Power-Down
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs
when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a
row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input
and output buffers, excluding CK, CK and CKE. The DLL is still running in Power Down mode, so for maximum
power savings, the user has the option of disabling the DLL prior to entering Power-down. In that case, the DLL
must be enabled after exiting power-down, and 200 clock cycles must occur before a Read command can be
issued. In power-down mode, CKE Low and a stable clock signal must be maintained at the inputs of the DDR
SDRAM, and all other input signals are “Don’t Care”. However, power-down duration is limited by the refresh
requirements of the device, so in most applications, the self refresh mode is preferred over the DLL-disabled
power-down mode.
The power-down state is synchronously exited when CKE is registered HIGH (along with a Nop or Deselect
command). A valid, executable command may be applied one clock cycle later.
CK
CK
tIS
tIS
CKE
Command
VALID
NOP
VALID
NOP
No column
access in
progress
Exit
power down
mode
Don’t Care
Enter Power Down mode
(Burst Read or Write operation
must not be in progress)
Figure 31 Power Down
Data Sheet
48
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Table 7
Current State CKE n-1
Previous Current
Truth Table 2: Clock Enable (CKE)
CKEn
Command n
Action n
Notes
Cycle
Cycle
Self Refresh
Self Refresh
Power Down
Power Down
All Banks Idle
All Banks Idle
L
L
L
X
Maintain Self-Refresh
Exit Self-Refresh
–
1)
H
L
Deselect or NOP
X
L
Maintain Power-Down
Exit Power-Down
–
–
L
H
L
Deselect or NOP
Deselect or NOP
AUTO REFRESH
Deselect or NOP
H
H
Precharge Power-Down Entry –
L
Self Refresh Entry
–
–
–
Bank(s) Active H
H
L
Active Power-Down Entry
–
H
See “Truth Table 3:
Current State Bank n -
Command to Bank n (same
bank)” on Page 49
1) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (tXSNR) period. A
minimum of 200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.
1. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n.
4. All states and sequences not shown are illegal or reserved.
Table 8
Truth Table 3: Current State Bank n - Command to Bank n (same bank)
Current State CS RAS CAS WE Command
Action
Notes
1) to 6)
Any
Idle
H
L
L
L
L
X
H
L
L
L
X
H
H
L
X
H
H
H
L
Deselect
NOP. Continue previous operation
1) to 6)2)
1) to 6)3)
1) to 7)4)
1) to 7)5)
No Operation
Active
NOP. Continue previous operation
Select and activate row
AUTO REFRESH
–
–
L
MODE
REGISTER SET
1) to 6), 10)
1) to 6), 10)7)
1) to 6), 8)
Row Active
L
L
L
L
H
H
L
L
L
H
L
H
L
Read
Select column and start Read burst
Select column and start Write burst
Deactivate row in bank(s)
Write
L
Precharge
Read
1) to 6), 10)9)
Read
(Auto
H
H
Select column and start new Read
burst
1) to 6), 8)10)
1) to 6), 9)11)
Precharge
Disabled)
L
L
L
H
H
L
L
Precharge
Truncate Read burst, start
Precharge
H
BURST
BURST TERMINATE
TERMINATE
1) to 6), 10), 11)
1) to 6), 10)
Write
(Auto
Precharge
Disabled)
L
L
L
H
H
L
L
L
H
H
L
Read
Select column and start Read burst
Select column and start Write burst
Write
1) to 6), 8), 11)
L
Precharge
Truncate Write burst, start
Precharge
1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Truth Table 2: Clock Enable (CKE) and after tXSNR
XSRD has been met (if the previous state was self refresh).
/
t
Data Sheet
49
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are
those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3) Current state definitions: Idle:The bank has been precharged, and tRP has been met. Row Active: A row in the bank has
been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A
Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Write: A
Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
4) The following states must not be interrupted by a command issued to the same bank. Precharging: Starts with registration
of a Precharge command and ends when tRP is met. Once tRP is met, the bank is in the idle state. Row Activating: Starts
with registration of an Active command and ends when tRCD is met. Once tRCD is met, the bank is in the “row active” state.
Read w/Auto Precharge Enabled: Starts with registration of a Read command with Auto Precharge enabled and ends when
t
RP has been met. Once tRP is met, the bank is in the idle state. Write w/Auto Precharge Enabled: Starts with registration
of a Write command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the
idle state. Deselect or NOP commands, or allowable commands to the other bank should be issued on any clock edge
occurring during these states. Allowable commands to the other bank are determined by its current state& according to
Truth Table 4.
5) The following states must not be interrupted by any executable command; Deselect or NOP commands must be applied
on each positive clock edge during these states. Refreshing: Starts with registration of an Auto Refresh command and
ends when tRFC is met. Once tRFC is met, the DDR SDRAM is in the “all banks idle” state. Accessing Mode Register: Starts
with registration of a Mode Register Set command and ends when tMRD has been met. Once tMRD is met, the DDR
SDRAM is in the “all banks idle” state. Precharging All: Starts with registration of a Precharge All command and ends
when tRP is met. Once tRP is met, all banks is in the idle state.
6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle.
8) May or may not be bank-specific; if all/any banks are to be precharged, all/any must be in a valid state for precharging.
9) Not bank-specific; BURST TERMINATE affects the most recent Read burst, regardless of bank.
10) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
11) Requires appropriate DM masking.
Data Sheet
50
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
Table 9
Truth Table 4: Current State Bank n - Command to Bank m (different bank)
Current State
CS RAS CAS WE Command
Action
Notes
1) to 6)2)3)4)5)6)
Any
H
X
H
X
X
H
X
X
H
X
Deselect
NOP. Continue previous
operation.
1) to 6)
1) to 6)
L
No Operation
NOP. Continue previous
operation.
Idle
X
Any Command
Otherwise Allowed
to Bank m
–
1) to 6)
1) to 7)
Row Activating,
Active, or
Precharging
L
L
L
H
L
H
H
Active
Read
Select and activate row
H
Select column and start
Read burst
1) to 7)
L
H
L
L
Write
Select column and start Write
burst
1) to 6)
1) to 6)
1) to 7)
L
L
L
L
L
H
H
H
L
L
Precharge
Active
–
Read (Auto
Precharge
Disabled)
H
H
Select and activate row
Read
Select column and start new
Read burst
1) to 6)
1) to 6)
1) to 8)
L
L
L
L
L
H
H
H
L
L
Precharge
Active
–
Write (Auto
Precharge
Disabled)
H
H
Select and activate row
Read
Select column and start Read
burst
1) to 7)
L
H
L
L
Write
Select column and start new
Write burst
1) to 6)
L
L
L
H
H
H
L
L
Precharge
Active
–
1) to 6)
Read (With Auto L
H
H
Select and activate row
1) to 7), 10)9)
Precharge)
L
Read
Select column and start new
Read burst
1) to 7), 9), 10)
L
H
L
L
Write
Select column and start Write
burst
1) to 6)
L
L
L
H
H
H
L
L
Precharge
Active
–
1) to 6)
Write (With Auto L
H
H
Select and activate row
1) to 7), 9)
Precharge)
L
Read
Select column and start Read
burst
1) to 7), 9)
1) to 6)
L
L
H
L
L
L
L
Write
Select column and start new
Write burst
H
Precharge
–
1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 7: Clock Enable (CKE) and after tXSNR/tXSRD
has been met (if the previous state was self refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
Data Sheet
51
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3) Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Read with Auto Precharge Enabled: See 10)
Write with Auto Precharge Enabled: See 10)
.
.
4) AUTO REFRESH and Mode Register Set commands may only be issued when all banks are idle.
5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6) All states and sequences not shown are illegal or reserved.
7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
8) Requires appropriate DM masking.
9) Concurrent Auto Precharge:
This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto precharge is
enabled any command may follow to the other banks as long as that command does not interrupt the read or write data
transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The
minimum delay from a read or write command with auto precharge enable, to a command to a different banks is
summarized in Table 10.
10) A Write command may be applied after the completion of data output.
Table 10
Truth Table 5: Concurrent Auto Precharge
From Command
To Command (different bank)
Minimum Delay with Concurrent
Auto Precharge Support
Unit
WRITE w/AP
Read or Read w/AP
Write to Write w/AP
Precharge or Activate
Read or Read w/AP
Write or Write w/AP
Precharge or Activate
1 + (BL/2) + tWTR
tCK
tCK
tCK
tCK
tCK
tCK
BL/2
1
Read w/AP
BL/2
CL (rounded up) + BL/2
1
Data Sheet
52
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Functional Description
3.6
Simplified State Diagram
Power
Applied
Power
On
Self
Refresh
Precharge
PREALL
REFS
REFSX
MRS
EMRS
Auto
Refresh
MRS
REFA
Idle
CKEL
CKEH
Active
Power
Down
ACT
Precharge
Power
Down
CKEH
CKEL
Write
Burst Stop
Row
Active
Read
Write A
Read A
Write
Read
Read
Read A
Write A
Read
A
PRE
Write
A
Read
A
PRE
PRE
Precharge
PREALL
PRE
Automatic Sequence
Command Sequence
PREALL = Precharge All Banks
MRS = Mode Register Set
EMRS = Extended Mode Register Set
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
REFA = Auto Refresh
CKEL = Enter Power Down
CKEH = Exit Power Down
ACT = Active
Write A = Write with Autoprecharge
Read A = Read with Autoprecharge
PRE = Precharge
Figure 32 Simplified State Diagram
Data Sheet
53
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4
Electrical Characteristics
4.1
Operating Conditions
Table 11
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit Note/ Test Condition
min. typ. max.
Voltage on I/O pins relative to VSS
Voltage on inputs relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Operating temperature (ambient)
Storage temperature (plastic)
VIN, VOUT –0.5 –
V
DDQ+0.5 V
–
–
–
–
–
–
–
–
VIN
–1
–1
–1
0
–
+3.6
+3.6
+3.6
+70
+150
–
V
VDD
VDDQ
TA
–
V
–
V
–
°C
°C
W
mA
TSTG
PD
-55
–
–
Power dissipation (per SDRAM component)
Short circuit output current
1.5
50
IOUT
–
–
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This
is a stress rating only, and functional operation should be restricted to recommended operation
conditions. Exposure to absolute maximum rating conditions for extended periods of time may
affect device reliability and exceeding only one of the values may cause irreversible damage to
the integrated circuit.
Table 12
Input and Output Capacitances
Symbol
Parameter
Values
Typ.
—
Unit
Note/
Test Condition
Min.
1.5
2.0
—
Max.
2.5
Input Capacitance: CK, CK
Delta Input Capacitance
CI1
pF
pF
pF
pF
pF
pF
TSOPII 1)
TFBGA 1)
—
3.0
1)
CdI1
CI2
—
0.25
2.5
Input Capacitance:
All other input-only pins
1.5
2.0
—
—
TFBGA 1)
TSOPII 1)
—
3.0
1)
Delta Input Capacitance:
All other input-only pins
CdIO
—
0.5
TFBGA 1)2)
Input/Output Capacitance: DQ, DQS, DM CIO
3.5
4.0
—
—
—
—
4.5
5.0
0.5
pF
pF
pF
TSOPII 1)2)
1)
Delta Input/Output Capacitance:
DQ, DQS, DM
CdIO
1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V ± 0.2 V, f = 100 MHz,
TA = 25 °C, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace
matching at the board level.
Data Sheet
54
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 13
Electrical Characteristics and DC Operating Conditions
Parameter
Symbol
Values
Typ.
Unit Note/Test Condition 1)
Min.
2.3
2.5
2.3
2.5
0
Max.
2.7
2.7
2.7
2.7
0
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
VDD
2.5
2.6
2.5
2.6
V
V
V
V
V
fCK ≤ 166 MHz
CK > 166 MHz 2)
fCK ≤ 166 MHz 3)
CK > 166 MHz 2)3)
VDD
f
VDDQ
VDDQ
f
Supply Voltage, I/O Supply VSS,
—
Voltage
VSSQ
VREF
VTT
4)
5)
Input Reference Voltage
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ
V
I/O Termination Voltage
(System)
V
REF – 0.04
V
REF + 0.04 V
8)
8)
8)
Input High (Logic1) Voltage VIH(DC)
Input Low (Logic0) Voltage VIL(DC)
V
REF + 0.15
V
V
V
DDQ + 0.3
V
–0.3
REF – 0.15 V
Input Voltage Level,
CK and CK Inputs
VIN(DC) –0.3
DDQ + 0.3
DDQ + 0.6
V
8)6)
7)
Input Differential Voltage, VID(DC) 0.36
CK and CK Inputs
V
V
VI-Matching Pull-up
Current to Pull-down
Current
VIRatio
0.71
–2
1.4
2
—
Input Leakage Current
II
µA Any input 0 V ≤ VIN ≤ VDD;
All other pins not under test
= 0 V 8)9)
Output Leakage Current
IOZ
IOH
IOL
–5
5
µA DQs are disabled;
0 V ≤ VOUT ≤ VDDQ
Output High Current,
Normal Strength Driver
—
–16.2
—
mA
V
OUT = 1.95 V
Output Low
16.2
mA
V
OUT = 0.35 V
Current, Normal Strength
Driver
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V
(DDR400);
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions, VDDQ must be less than or equal to VDD
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF, and must track variations in the DC level of VREF
.
.
.
6) VID is the magnitude of the difference between the input level on CK and the input level on CK.
7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
8) Inputs are not recognized as valid until VREF stabilizes.
9) Values are shown per component
Data Sheet
55
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device drain
to source voltages from 0.1 to 1.0 V.
140
Maximum
120
100
Nominal High
80
60
40
Nominal Low
Minimum
20
0
0
0.5
1
1.5
2
2.5
VDDQ - VOUT (V)
Figure 33 Normal Strength Pull-down Characteristics
0
-20
-40
-60
-80
Minimum
Nominal Low
-100
-120
-140
-160
Nominal High
Maximum
0
0.5
1
1.5
2
2.5
VDDQ - Vout(V)
Figure 34 Normal Strength Pull-up Characteristics
Data Sheet
56
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 14
Normal Strength Pull-down and Pull-up Currents
Pulldown Current (mA)
Voltage (V)
Pullup Current (mA)
Nominal
Low
Nominal
High
min.
max.
Nominal
Low
Nominal
High
min.
max.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
6.0
6.8
4.6
9.6
−6.1
−7.6
−4.6
−10.0
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
13.5
20.1
26.6
33.0
39.1
44.2
49.8
55.2
60.3
65.2
69.9
74.2
78.4
82.3
85.9
89.1
92.2
95.3
97.2
99.1
100.9
101.9
102.8
103.8
104.6
105.4
9.2
18.2
−12.2
−18.1
−24.0
−29.8
−34.3
−38.1
−41.1
−43.8
−46.0
−47.8
−49.2
−50.0
−50.5
−50.7
−51.0
−51.1
−51.3
−51.5
−51.6
−51.8
−52.0
−52.2
−52.3
−52.5
−52.7
−52.8
−14.5
−21.2
−27.7
−34.1
−40.5
−46.9
−53.1
−59.4
−65.5
−71.6
−77.6
−83.6
−89.7
−95.5
−101.3
−107.1
−112.4
−118.7
−124.0
−129.3
−134.6
−139.9
−145.2
−150.5
−155.3
−160.1
−9.2
−20.0
13.8
18.4
23.0
27.7
32.2
36.8
39.6
42.6
44.8
46.2
47.1
47.4
47.7
48.0
48.4
48.9
49.1
49.4
49.6
49.8
49.9
50.0
50.2
50.4
50.5
26.0
−13.8
−18.4
−23.0
−27.7
−32.2
−36.0
−38.2
−38.7
−39.0
−39.2
−39.4
−39.6
−39.9
−40.1
−40.2
−40.3
−40.4
−40.5
−40.6
−40.7
−40.8
−40.9
−41.0
−41.1
−41.2
−29.8
33.9
−38.8
41.8
−46.8
49.4
−54.4
56.8
−61.8
63.2
−69.5
69.9
−77.3
76.3
−85.2
82.5
−93.0
88.3
−100.6
−108.1
−115.5
−123.0
−130.4
−136.7
−144.2
−150.5
−156.9
−163.2
−169.6
−176.0
−181.3
−187.6
−192.9
−198.2
93.8
99.1
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
Table 15
Pull-down and Pull-up Process Variations and Conditions
Parameter
Nominal
25 °C
Minimum
Maximum
Operating Temperature
VDD/VDDQ
0 °C
70 °C
2.5 V
2.3 V
2.7 V
Process Corner
typical
slow-slow
fast-fast
Data Sheet
57
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.3
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve
2. The weak pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
4. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device drain
to source voltages from 0.1 to 1.0V.
80
Maximum
70
60
50
40
30
20
10
0
Typical high
Typical low
Minimum
0,0
0,5
1,0
1,5
Vout [V]
2,0
2,5
Figure 35 Weak Strength Pull-down Characteristics
0,0
0,0
0,5
1,0
1,5
2,0
2,5
-10,0
-20,0
-30,0
-40,0
-50,0
-60,0
-70,0
-80,0
Minimum
Typical low
Typical high
Maximum
Vout [V]
Figure 36 Weak Strength Pull-up Characteristics
Data Sheet
58
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 16
Weak Strength Driver Pull-down and Pull-up Characteristics
Pulldown Current (mA) Pullup Current (mA)
Voltage (V)
Nominal
Low
Nominal
High
min.
max.
Nominal
Low
Nominal
High
min.
max.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
3.4
3.8
2.6
5.0
−3.5
−4.3
−2.6
−5.0
6.9
7.6
5.2
9.9
−6.9
−8.2
−5.2
−9.9
10.3
13.6
16.9
19.6
22.3
24.7
26.9
29.0
30.6
31.8
32.8
33.5
34.0
34.3
34.5
34.8
35.1
35.4
35.6
35.8
36.1
36.3
36.5
36.7
36.8
11.4
15.1
18.7
22.1
25.0
28.2
31.3
34.1
36.9
39.5
42.0
44.4
46.6
48.6
50.5
52.2
53.9
55.0
56.1
57.1
57.7
58.2
58.7
59.2
59.6
7.8
14.6
19.2
23.6
28.0
32.2
35.8
39.5
43.2
46.7
50.0
53.1
56.1
58.7
61.4
63.5
65.6
67.7
69.8
71.6
73.3
74.9
76.4
77.7
78.8
79.7
−10.3
−13.6
−16.9
−19.4
−21.5
−23.3
−24.8
−26.0
−27.1
−27.8
−28.3
−28.6
−28.7
−28.9
−28.9
−29.0
−29.2
−29.2
−29.3
−29.5
−29.5
−29.6
−29.7
−29.8
−29.9
−12.0
−15.7
−19.3
−22.9
−26.5
−30.1
−33.6
−37.1
−40.3
−43.1
−45.8
−48.4
−50.7
−52.9
−55.0
−56.8
−58.7
−60.0
−61.2
−62.4
−63.1
−63.8
−64.4
−65.1
−65.8
−7.8
−14.6
−19.2
−23.6
−28.0
−32.2
−35.8
−39.5
−43.2
−46.7
−50.0
−53.1
−56.1
−58.7
−61.4
−63.5
−65.6
−67.7
−69.8
−71.6
−73.3
−74.9
−76.4
−77.7
−78.8
−79.7
10.4
13.0
15.7
18.2
20.8
22.4
24.1
25.4
26.2
26.6
26.8
27.0
27.2
27.4
27.7
27.8
28.0
28.1
28.2
28.3
28.3
28.4
28.5
28.6
−10.4
−13.0
−15.7
−18.2
−20.4
−21.6
−21.9
−22.1
−22.2
−22.3
−22.4
−22.6
−22.7
−22.7
−22.8
−22.9
−22.9
−23.0
−23.0
−23.1
−23.2
−23.2
−23.3
−23.3
Table 17
Evaluation Conditions for I/O Driver Characteristics
Parameter
Nominal
25
Minimum
Maximum
0
Operating Temperature
VDD/VDDQ
70
2.5
2.3
2.7
Process Corner
typ.
slow-slow
fast-fast
Data Sheet
59
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.4
AC Characteristics
(Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating
Conditions, IDD Specifications and Conditions, and Electrical Characteristics and AC Timing.)
Notes:
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal
reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full
voltage range specified.
3. Figure 37 represents the timing reference load used in defining the relevant timing parameters of the part. It
is not intended to be either a precise representation of the typical system environment nor a depiction of the
actual load presented by a production tester. System designers will use IBIS or other simulation tools to
correlate the timing reference load to a system environment. Manufacturers will correlate to their production
test conditions (generally a coaxial transmission line terminated at the tester electronics).
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is
still referenced to VREF (or to the crossing point for CK, CK), and parameter specifications are guaranteed for
the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is
1 V/ns in the range between VIL(AC) and VIH(AC)
.
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively
switches as a result of the signal crossing the AC input level, and remains in that state as long as the signal
does not ring back above (below) the DC input LOW (HIGH) level).
6. For System Characteristics like Setup & Holdtime Derating for Slew Rate, I/O Delta Rise/Fall Derating, DDR
SDRAM Slew Rate Standards, Overshoot & Undershoot specification and Clamp V-I characteristics see the
latest JEDEC specification for DDR components.
VTT
50 Ω
Output
Timing Reference Point
(VOUT
)
30 pF
Figure 37 AC Output Load Circuit Diagram / Timing Reference Load
Data Sheet
60
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 18
AC Operating Conditions1)
Parameter
Symbol
Values
Max.
Unit Note/
Test
Min.
Condition
2)3)
Input High (Logic 1) Voltage, DQ, DQS and DM Signals VIH(AC)
Input Low (Logic 0) Voltage, DQ, DQS and DM Signals VIL(AC)
V
REF + 0.31 —
V
2)3)
—
V
V
REF – 0.31 V
2)3)4)
2)3)5)
Input Differential Voltage, CK and CK Inputs
Input Closing Point Voltage, CK and CK Inputs
VID(AC)
VIX(AC)
0.7
DDQ + 0.6
V
V
0.5 × VDDQ 0.5 × VDDQ
– 0.2 + 0.2
1) VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR200 - DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V (DDR400);
0 °C ≤ TA ≤ 70 °C
2) Input slew rate = 1 V/ns.
3) Inputs are not recognized as valid until VREF stabilizes.
4) VID is the magnitude of the difference between the input level on CK and the input level on CK.
5) The value of VIX is expected to equal 0.5 × VDDQ of the transmitting device and must track variations in the DC level of the
same.
Table 19
AC Timing - Absolute Specifications for DDR333 and DDR400B
Parameter
Symbol
–6
–5
Unit
Note/ Test
Condition 1)
DDR333
DDR400B
Min.
Max.
+0.7
+0.6
0.55
0.55
Min.
Max.
+0.5
+0.6
0.55
0.55
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
DQ output access time from CK/CK
tAC
–0.7
–0.6
0.45
0.45
–0.5
–0.6
0.45
0.45
ns
ns
tCK
tCK
DQS output access time from CK/CK tDQSCK
CK high-level width
CK low-level width
Clock Half Period
Clock cycle time
tCH
tCL
tHP
tCK
min. (tCL, tCH)
min. (tCL, tCH) ns
—
—
12
12
5
8
ns
ns
ns
CL = 3.0
2)3)4)5)
7.5
7.5
6
12
12
CL = 2.5
2)3)4)5)
7.5
CL = 2.0
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)6)
DQ and DM input hold time
DQ and DM input setup time
tDH
tDS
0.45
0.45
2.2
—
—
—
0.4
0.4
2.2
—
—
—
ns
ns
ns
Control and Addr. input pulse width
(each input)
tIPW
2)3)4)5)6)
2)3)4)5)7)
2)3)4)5)7)
2)3)4)5)
DQ and DM input pulse width (each
input)
tDIPW
tHZ
1.75
–0.7
–0.7
0.75
—
1.75
–0.7
–0.7
0.75
—
ns
ns
ns
tCK
Data-out high-impedance time from
CK/CK
+0.7
+0.7
1.25
+0.7
+0.7
1.25
Data-out low-impedance time from
CK/CK
Write command to 1st DQS latching
tLZ
tDQSS
transition
Data Sheet
61
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 19
AC Timing - Absolute Specifications for DDR333 and DDR400B
Parameter
Symbol
–6
–5
Unit
Note/ Test
Condition 1)
DDR333
DDR400B
Min.
Max.
Min.
Max.
DQS-DQ skew (DQS and associated tDQSQ
DQ signals)
—
+0.45
—
+0.40
ns
ns
TSOPII
2)3)4)5)
Data hold skew factor
tQHS
tQH
—
+0.55
—
+0.50
TSOPII
2)3)4)5)
2)3)4)5)
2)3)4)5)
DQ/DQS output hold time
t
HP –tQHS
t
HP –tQHS
ns
DQS input low (high) pulse width (write tDQSL,H
cycle)
0.35
—
—
—
0.35
—
—
—
tCK
2)3)4)5)
2)3)4)5)
DQS falling edge to CK setup time
(write cycle)
tDSS
tDSH
0.2
0.2
0.2
0.2
tCK
tCK
DQS falling edge hold time from CK
(write cycle)
2)3)4)5)
Mode register set command cycle time tMRD
2
—
2
—
tCK
ns
2)3)4)5)8)
2)3)4)5)9)
2)3)4)5)
Write preamble setup time
Write postamble
tWPRES
tWPST
tWPRE
0
—
0
—
0.40
0.25
0.75
0.60
—
0.40
0.25
0.6
0.60
—
tCK
tCK
ns
Write preamble
Address and control input setup time tIS
—
—
fast slew rate
3)4)5)6)10)
0.8
—
0.7
—
ns
slow slew
rate
3)4)5)6)10)
Address and control input hold time
tIH
0.75
0.8
—
—
0.6
0.7
—
—
ns
ns
fast slew rate
3)4)5)6)10)
slow slew
rate
3)4)5)6)10)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
Read preamble
tRPRE
tRPST
tRAS
0.9
0.40
42
1.1
0.9
1.1
tCK
tCK
Read postamble
0.60
0.40
0.60
Active to Precharge command
70E+3 40
70E+3 ns
Active to Active/Auto-refresh command tRC
60
—
55
—
ns
period
2)3)4)5)
Auto-refresh to Active/Auto-refresh
command period
tRFC
72
—
70
—
ns
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
Active to Read or Write delay
Precharge command period
Active to Autoprecharge delay
tRCD
tRP
tRAP
tRRD
18
18
—
—
15
15
—
—
ns
ns
ns
ns
tRCD – tRASmin
tRCD – tRASmin
Active bank A to Active bank B
command
12
—
10
—
2)3)4)5)
Write recovery time
tWR
15
—
15
—
ns
2)3)4)5)11)
Auto precharge write recovery +
precharge time
tDAL
tCK
2)3)4)5)
2)3)4)5)
Internal write to read command delay tWTR
Exit self-refresh to non-read command tXSNR
1
—
—
1
—
—
tCK
75
75
ns
Data Sheet
62
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 19
AC Timing - Absolute Specifications for DDR333 and DDR400B
Parameter
Symbol
–6
–5
Unit
Note/ Test
Condition 1)
DDR333
DDR400B
Min.
Max.
—
Min.
Max.
—
2)3)4)5)
Exit self-refresh to read command
Average Periodic Refresh Interval
tXSRD
tREFI
200
—
200
—
tCK
2)3)4)5)12)
7.8
7.8
µs
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V
(DDR400)
2) Input slew rate ≥ 1 V/ns for DDR400, DDR333
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is VREF. CK/CK slew rate are ≥ 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
10) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,
measured between VIH(ac) and VIL(ac)
.
11) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock
cycle time.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Table 20
AC Timing - Absolute Specifications DDR266A, DDR266 and DDR200
Parameter
Symbol
–7
–7F
-8
Unit Note/
Test Condition 1)
DDR266A
DDR266
DDR200
Min. Max. Min.
Max. Min.
Max.
2)3)4)5)
2)3)4)5)
DQ output access time
from CK/CK
tAC
–0.75 +0.75 –0.75 +0.75 –0.8
+0.8
ns
ns
DQS output access time
from CK/CK
tDQSCK
–0.75 +0.75 –0.75 +0.75 –0.8
+0.8
2)3)4)5)
2)3)4)5)
2)3)4)5)
CK high-level width
CK low-level width
Clock Half Period
Clock cycle time
tCH
0.45 0.55 0.45
0.45 0.55 0.45
0.55
0.55
0.45
0.45
0.55
0.55
tCK
tCK
tCL
tHP
min. (tCL, tCH) min. (tCL, tCH)
min. (tCL, tCH) ns
tCK2.5
tCK2
DQ and DM input hold time tDH
7.5
7.5
0.5
0.5
12
12
—
—
7.5
7.5
0.5
0.5
12
12
—
—
10
12
12
—
—
ns
ns
ns
ns
CL = 2.5 2)3)4)5)
CL = 2.0 2)3)4)5)
10
2)3)4)5)
0.6
0.6
2)3)4)5)
DQ and DM input setup
time
tDS
Data Sheet
63
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 20
AC Timing - Absolute Specifications DDR266A, DDR266 and DDR200
Parameter
Symbol
–7
–7F
-8
Unit Note/
Test Condition 1)
DDR266A
DDR266
DDR200
Min. Max. Min.
Max. Min.
Max.
2)3)4)5)6)
2)3)4)5)6)
2)3)4)5)7)
2)3)4)5)7)
2)3)4)5)
Control and Addr. input
pulse width (each input)
tIPW
2.2
—
2.2
—
2.5
—
ns
ns
ns
ns
tCK
DQ and DM input pulse
width (each input)
tDIPW
1.75
—
1.75
—
2
—
Data-out high-impedance tHZ
time from CK/CK
–0.75 +0.75 –0.75 +0.75
—
+0.8
+0.8
1.25
Data-out low-impedance
time from CK/CK
Write command to 1st DQS tDQSS
tLZ
–0.75 +0.75 –0.75 +0.75 –0.8
0.75 1.25 0.75
1.25
0.75
latching transition
DQS-DQ skew (DQS and tDQSQ
associated DQ signals)
—
—
—
—
+0.5
+0.5
—
—
+0.5
—
—
—
—
+0.6
+0.6
+1.0
+1.0
ns
ns
ns
ns
ns
tCK
FBGA2)3)4)5)
TSOP2)3)4)5)
FBGA2)3)4)5)
TSOP2)3)4)5)
2)3)4)5)
+0.5
Data hold skew factor
tQHS
+0.75 —
+0.75 —
+0.75
+0.75
DQ/DQS output hold time tQH
t
HP – tQHS
t
HP –tQHS
tHP –tQHS
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
DQS input low (high) pulse tDQSL,H 0.35
width (write cycle)
—
—
—
—
—
0.35
—
—
—
—
0.35
0.2
0.2
2
—
—
—
—
DQS falling edge to CK
setup time (write cycle)
tDSS
0.2
0.2
2
0.2
0.2
2
tCK
tCK
tCK
DQS falling edge hold time tDSH
from CK (write cycle)
Mode register set
tMRD
command cycle time
2)3)4)5)8)
2)3)4)5)9)
2)3)4)5)
Write preamble setup time tWPRES
0
0
—
0
—
ns
tCK
tCK
ns
Write postamble
Write preamble
tWPST
tWPRE
0.40 0.60 0.40
0.60
—
0.40
0.25
1.1
0.60
—
0.25
0.9
—
—
0.25
0.9
Address and control input tIS
setup time
—
—
fast slew rate
3)4)5)6)10)
1.0
0.9
1.0
0.9
—
—
—
1.1
1.0
0.9
1.0
0.9
—
—
—
1.1
1.1
1.1
—
—
—
ns
ns
ns
slow slew rate
3)4)5)6)10)
Address and control input tIH
hold time
fast slew rate
3)4)5)6)10)
slow slew rate
3)4)5)6)10)
2)3)4)5)
2)3)4)5)
2)3)4)5)
Read preamble
Read postamble
tRPRE
tRPST
tRAS
1.1
0.9
1.1
tCK
tCK
0.40 0.60 0.40
0.60
0.40
0.60
Active to Precharge
command
45
65
75
120E 45
+3
120E 50
+3
120E+ ns
3
2)3)4)5)
2)3)4)5)
Active to Active/Auto-
tRC
—
65
—
70
—
ns
refresh command period
Auto-refresh to
tRFC
—
75
—
80
—
ns
Active/Auto-refresh
command period
Data Sheet
64
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 20
AC Timing - Absolute Specifications DDR266A, DDR266 and DDR200
Parameter
Symbol
–7
–7F
-8
Unit Note/
Test Condition 1)
DDR266A
DDR266
DDR200
Min. Max. Min.
Max. Min.
Max.
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
Active to Read or Write
delay
tRCD
tRP
tRAP
tRRD
20
—
20
—
20
—
ns
ns
ns
ns
Precharge command
period
20
—
20
—
20
—
Active to Autoprecharge
delay
tRCD or tRASmin tRCD or tRASmin tRCD or tRASmin
Active bank A to Active
bank B command
15
15
—
—
15
—
15
—
—
2)3)4)5)
Write recovery time
tWR
15
—
15
ns
2)3)4)5)11)
Auto precharge write
tDAL
(tWR/tCK) + (tRP/tCK)
tCK
recovery + precharge time
2)3)4)5)
Internal write to read
command delay
tWTR
1
—
—
—
7.8
1
—
—
—
7.8
1
—
—
—
7.8
tCK
ns
tCK
µs
2)3)4)5)
Exit self-refresh to non-
read command
tXSNR
tXSRD
75
200
—
75
200
—
80
200
—
2)3)4)5)
Exit self-refresh to read
command
2)3)4)5)12)
Average Periodic Refresh tREFI
Interval
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V
2) Input slew rate ≥ 1 V/ns for DDR266, DDR266A
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is VREF. CK/CK slew rate are ≥ 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
10) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,
measured between VIH(ac) and VIL(ac)
.
11) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock
cycle time.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Data Sheet
65
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 21
IDD Conditions
Parameter
Symbol
Operating Current: one bank; active/ precharge; tRC = tRCMIN; tCK = tCKMIN
;
IDD0
DQ, DM, and DQS inputs changing once per clock cycle; address and control inputs changing once
every two clock cycles.
Operating Current: one bank; active/read/precharge; Burst = 4;
IDD1
Refer to the following page for detailed test conditions.
Precharge Power-Down Standby Current: all banks idle; power-down mode; CKE ≤ VILMAX; tCK
tCKMIN
=
IDD2P
IDD2F
Precharge Floating Standby Current: CS ≥ VIHMIN, all banks idle;
CKE ≥ VIHMIN; tCK = tCKMIN, address and other control inputs changing once per clock cycle, VIN = VREF
for DQ, DQS and DM.
Precharge Quiet Standby Current:
IDD2Q
CS ≥ VIHMIN, all banks idle; CKE ≥ VIHMIN; tCK = tCKMIN, address and other control inputs stable
at ≥ VIHMIN or ≤ VILMAX; VIN = VREF for DQ, DQS and DM.
Active Power-Down Standby Current: one bank active; power-down mode;
CKE ≤ VILMAX; tCK = tCKMIN; VIN = VREF for DQ, DQS and DM.
IDD3P
Active Standby Current: one bank active; CS ≥ VIHMIN; CKE ≥ VIHMIN; tRC = tRASMAX; tCK = tCKMIN; DQ, IDD3N
DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock
cycle.
Operating Current: one bank active; Burst = 2; reads; continuous burst; address and control inputs IDD4R
changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200
and DDR266A, CL = 3 for DDR333; tCK = tCKMIN; IOUT = 0 mA
Operating Current: one bank active; Burst = 2; writes; continuous burst; address and control inputs IDD4W
changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200
and DDR266A, CL = 3 for DDR333; tCK = tCKMIN
Auto-Refresh Current: tRC = tRFCMIN, burst refresh
IDD5
IDD6
IDD7
Self-Refresh Current: CKE ≤ 0.2 V; external clock on; tCK = tCKMIN
Operating Current: four bank; four bank interleaving with BL = 4; Refer to the following page for
detailed test conditions.
Data Sheet
66
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 22
Symbol
IDD Specifications
DDR200
-8
DDR266A
-7
DDR266
-7F
DDR333
-6
DDR400B Unit
-5
Note/Test
Condition1)
2)
typ. max. typ. max. typ. max. typ. max. typ. max.
IDD0
IDD1
70
72
80
83
5
90
75
100
105
110
115
8
83
110
115
120
125
8
85
110
115
120
125
9
70
90
90
mA
mA
x4/x8 3)
x16 3)
x4/x8 3)
x16 3)
3)
95
77
86
88
75
100
105
7
90
98
100
104
6
80
100 mA
110 mA
94
102
6
95
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
6
4
5
mA
mA
mA
mA
mA
mA
3)
3)
3)
3)
30
18
13
40
42
79
89
85
96
126
1.5
35
35
40
35
40
45
55
30
36
28
18
45
54
22
20
25
20
25
25
28
20
16
15
18
15
18
18
21
13
45
50
55
50
55
60
65
38
50
52
60
52
60
63
70
43
x16 3)
x4/x8 3)
x16 3)
x4/x8 3)
x16 3)
IDD4R
IDD4W
95
95
115
130
125
140
180
2.5
95
115
130
125
140
180
2.5
110
124
125
141
144
1.5
140
160
145
165
190
2.5
85
100 mA
120 mA
105 mA
130 mA
190 mA
110
105
120
170
2.5
107
105
119
135
1.5
107
105
119
135
1.5
100
90
100
140
1.4
—
3)
IDD5
IDD6
2.8
mA
mA
standard power3)4)
low power
x4/x8 3)
1.20 1.25 1.20 1.25 1.20 1.25 1.20 1.25
—
IDD7
150
158
210
220
171
180
225
235
171
180
225
235
208
218
270
285
210
210
250 mA
250 mA
x16 3)
1) Test conditions for typical values: VDD = 2.5 V (DDR333), VDD = 2.6 V (DDR400), TA = 25 °C, test conditions for maximum
values: VDD = 2.7 V, TA = 10 °C
2) IDD specifications are tested after the device is properly initialized and measured at 100 MHz for DDR200, 133 MHz for
DDR266, 166 MHz for DDR333, and 200 MHz for DDR400.
3) Input slew rate = 1 V/ns.
4) Enables on-chip refresh and address counters.
Data Sheet
67
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.4.1
IDD Current Measurement Conditions
IDD1: Operating Current: One Bank Operation
1. Only one bank is accessed with tRC(min) , Burst Mode, Address and Control inputs on NOP edge are changing
once per clock cycle. lout = 0 mA.
2. Timing patterns
a) DDR200 (100MHz, CL=2) : tCK = 10 ns, CL=2, BL=4, tRCD = 2 × tCK, tRAS = 5 × tCK
Setup: A0 N R0 N N P0 N
Read : A0 N R0 N N P0 N - repeat the same timing with random address changing
50% of data changing at every burst changing at every burst
b) DDR266 (133MHz, CL=2) : tCK = 7.5 ns, CL=2, BL=4, tRCD = 3 × tCK, tRC = 9 × tCK, tRAS = 5 × tCK
Setup: A0 N N R0 N P0 N N N
Read : A0 N N R0 N P0 N NN - repeat the same timing with random address changing
50% of data changing at every burst
c) DDR333 (166MHz, CL=2.5) : tCK = 6 ns, CL=2.5, BL=4, tRCD = 3 × tCK, tRC = 9 × tCK, tRAS = 5 × tCK
Setup: A0 N N R0 N P0 N N N
Read : A0 N N R0 N P0 N N N - repeat the same timing with random address changing
50% of data changing at every burst
d) DDR400B (200 MHz, CL = 3): tCK = 5 ns, BL = 4, tRCD = 3 × tCK, tRC = 11 × tCK, tRAS = 8 × tCK
Setup:A0 N N R0 N N N N P0 N N
Read: A0 N N R0 N N N N P0 N N -repeat the same timing with random address changing
3. Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP
IDD7: Operating Current: Four Bank Operation
1. Four banks are being interleaved with tRCMIN. Burst Mode, Address and Control inputs on NOP edge are not
changing. IOUT = 0 mA.
2. Timing patterns
a) DDR200 (100 MHz, CL = 2): tCK = 10 ns, CL = 2, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK, Read with
autoprecharge
Setup: A0 N A1 R0 A2 R1 A3 R2
Read: A0 R3 A1 R0 A2 R1 A3 R2 - repeat the same timing with random address changing
50% of data changing at every burst
b) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, CL = 2, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK
Setup: A0 N A1 R0 A2 R1 A3 R2 N R3
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 - repeat the same timing with random address changing
50% of data changing at every burst
c) DDR333 (166 MHz, CL = 2.5): tCK = 6 ns, CL = 2.5, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK
Setup: A0 N A1 R0 A2 R1 A3 R2 N R3
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 - repeat the same timing with random address changing
50% of data changing at every burst
d) DDR400B (200 MHz, CL = 3): tCK = 5 ns, BL = 4, tRRD = 2 × tCK, tRCD = 3 *× tCK, tRAS = 8 × tCK
Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N
Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N - repeat the same timing with random address
3. Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP
Data Sheet
68
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
5
Timing Diagrams
tDQSL
tDQSH
DQS
DQ
tDH
tDS
DI n
tDH
tDS
DM
DI n = Data In for column n.
3 subsequent elements of data in are applied in programmed order following DI n.
Don’t Care
Figure 38 Data Input (Write), Timing Burst Length = 4
DQS
tDQSQ max
tQH
DQ
tQH (Data output hold time from DQS)
t
DQSQ and tQH are only shown once and are shown referenced to different edges of DQS, only for clarify of illustration.
.
tDQSQ and tQH both apply to each of the four relevant edges of DQS.
t
DQSQ max. is used to determine the worst case setup time for controller data capture.
tQH is used to determine the worst case hold time for controller data capture.
Figure 39 Data Output (Read), Timing Burst Length = 4
Data Sheet
69
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 40 Initialize and Mode Register Sets
Data Sheet
70
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 41 Power Down Mode
Data Sheet
71
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 42 Auto Refresh Mode
Data Sheet
72
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 43 Self Refresh Mode
Data Sheet
73
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 44 Read without Auto Precharge (Burst Length = 4)
Data Sheet
74
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 45 Read with Auto Precharge (Burst Length = 4)
Data Sheet
75
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 46 Bank Read Access (Burst Length = 4)
Data Sheet
76
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 47 Write without Auto Precharge (Burst Length = 4)
Data Sheet
77
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 48 Write with Auto Precharge (Burst Length = 4)
Data Sheet
78
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 49 Bank Write Access (Burst Length = 4)
Data Sheet
79
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Timing Diagrams
Figure 50 Write DM Operation (Burst Length = 4)
Data Sheet
80
Rev. 1.2, 2004-02
09222003-A8PO-81BB
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Package Outlines
6
Package Outlines
11 x 1 = 11
0.18 MAX.
1
5)
B
5)
0.052)
3)
4)
1)
A
0.1 C
0.1 C
60x
ø0.15
ø0.08
±0.05
ø0.4
C SEATING PLANE
M
M
A B
C
1.52)
4.25
0.2
12
1) A1 Marking Ballside
2) A1 Marking Chipside
3) Dummy Pads without Ball
4) Bad Unit Marking (BUM)
5) Middle of Packages Edges
Figure 51 P-TFBGA-60-2 (Plastic Thin Fine-Pitch Ball Grid Array Package)
Data Sheet
81
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Package Outlines
±5˚
±5˚
15˚
15˚
2)
±0.13
10.16
0.65
±0.1
0.5
±0.2
11.76
0.1 66x
32 x 0.65 = 20.8
M
0.12
66x
3)
±0.08
0.3
66
1
34
33
2.5 MAX.
1)
±0.13
22.22
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include plastic protrusion of 0.25 max. per side
3) Does not include dambar protrusion of 0.13 max.
Figure 52 P-TSOPII-66-1 (Plastic Thin Small Outline Package Type II)
Data Sheet
82
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
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