ICE3AR2280JZ [INFINEON]

集成电源管理 IC,集成具有雪崩能力的 800 V CoolMOS™、启动单元和固定频率电流械反激 PWM 控制器,采用 DIP-7 封装。适用于 24 W SMPS 设计。额外功能包括实现极低待机功耗的有源突发模式运行、实现低 EMI 的频率抖动、促进负载跳跃的可调节消隐窗口以及允许从整流线路快速启动控制器的高压启动单元。;
ICE3AR2280JZ
型号: ICE3AR2280JZ
厂家: Infineon    Infineon
描述:

集成电源管理 IC,集成具有雪崩能力的 800 V CoolMOS™、启动单元和固定频率电流械反激 PWM 控制器,采用 DIP-7 封装。适用于 24 W SMPS 设计。额外功能包括实现极低待机功耗的有源突发模式运行、实现低 EMI 的频率抖动、促进负载跳跃的可调节消隐窗口以及允许从整流线路快速启动控制器的高压启动单元。

控制器 信息通信管理 高压 开关 光电二极管
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Version 2.1a, 11 Jan 2012  
®
N e v e r s t o p t h i n k i n g .  
CoolSET®-F3R80  
ICE3AR2280JZ  
Revision History:  
2012-1-11  
Datasheet Version 2.1a  
Previous Version: 2.1  
Page  
Subjects (major changes since last revision)  
revise outline dimension for PG-DIP-7  
revise typo  
30  
3, 7, 17, 18  
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or  
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://  
www.infineon.com  
CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG.  
Edition 2012-1-11  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 1/11/12.  
All Rights Reserved.  
Attention please!  
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values  
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby  
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
®
ICE3AR2280JZ  
Off-Line SMPS Current Mode Controller with  
integrated 800V CoolMOS® and Startup cell  
(brownout & frequency jitter) in DIP-7  
Product Highlights  
800V avalanche rugged CoolMOS® with startup cell  
Active Burst Mode to reach the lowest Standby Power <100mW  
Selectable entry and exit burst mode level  
Adjustable blanking Window for high load jumps  
Frequency jitter and soft driving for low EMI  
Adjustable brownout feature  
PG-DIP7  
Auto Restart protection for over load, over temperature, over voltage and  
external protection enable function  
Pb-free lead plating; RoHS compliant  
Features  
800V avalanche rugged CoolMOS® with Startup Cell  
Description  
Active Burst Mode for lowest Standby Power  
Selectable entry and exit burst mode level  
100kHz internally fixed switching frequency with  
jittering feature  
The ICE3AR2280JZ (CoolSET®-F3R80) is an enhanced  
800V MOSFET version of ICE3BRxx65J (CoolSET®-F3R  
650V) in DIP-7 package. The PWM controller is based on  
F3R 650V with some new and enhanced features. In  
particular it is a device running at 100KHz, implemented  
with brownout features, installing 800V CoolMOS® with  
startup cell and packaged into DIP-7. It targets for the low  
power SMPS with increased MOSFET voltage margin  
requirement such as Off-Line battery adapters, DVD R/W,  
DVD Combi, Blue ray, set top box, auxiliary power supply  
for PC and server, etc. In summary, the CoolSET® F3R80  
provides good voltage margin of MOSFET, lowest  
standby power, selectable burst level, reduced output  
ripple during burst mode, reliable output with brownout  
feature, accurate maximum power control for both  
maximum power and burst power, low EMI with frequency  
jittering and soft gate drive, built-in and flexible  
protections, etc. Therefore, CoolSET® F3R80 is a  
Auto Restart Protection for Over load, Open Loop,  
VCC Under voltage & Over voltage and Over  
temperature  
External auto-restart enable pin  
Over temperature protection with 50°C hysteresis  
Built-in 10ms Soft Start  
Built-in 20ms and extendable blanking time for short  
duration peak power  
Propagation delay compensation for both maximum  
load and burst mode  
Adjustable brownout feature  
Overall tolerance of Current Limiting < ±5%  
BiCMOS technology for low power consumption and  
wide VCC voltage range  
Soft gate drive with 50W turn on resistor  
Typical Application  
+
Converter  
Snubber  
CBulk  
DC Output  
85 ... 270 VAC  
-
CVCC  
VCC  
Drain  
Startup Cell  
Power Management  
PWM Controller  
Current Mode  
CS  
Precise Low Tolerance Peak  
Current Limitation  
CoolMOS®  
RSense  
FBB  
CoolSET®-F3R80  
(Brownout & Jitter)  
Control Unit Active Burst Mode  
Brownout mode Auto Restart Mode  
RBO1  
BBA  
GND  
RBO2  
1)  
Type  
Package  
PG-DIP-7  
Marking  
VDS  
FOSC  
100kHz  
RDSon  
2.26  
230VAC ±15%2)  
85-265 VAC2)  
ICE3AR2280JZ  
typ @ T=25°C  
3AR2280JZ  
800V  
43W  
28W  
1)  
2)  
Calculated maximum input power rating at Ta=50°C, Ti=125°C and without copper area as heat sink.  
Version 2.1a  
3
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CoolSET®-F3R80  
ICE3AR2280JZ  
Table of Contents  
Page  
1
1.1  
1.2  
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Pin Configuration with PG-DIP-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
2
Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
3
3.1  
3.2  
3.3  
3.3.1  
3.3.2  
3.4  
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Propagation Delay Compensation (patented) . . . . . . . . . . . . . . . . . . . . .13  
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Active Burst Mode (patented) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Selectable burst entry level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  
Vcc OVP, OTP, external protection enable and Vcc under voltage . . .18  
Over load, open loop protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18  
Brownout Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19  
Action sequence at BBA pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20  
3.5  
3.5.1  
3.5.2  
3.5.3  
3.6  
3.6.1  
3.6.2  
3.7  
3.7.1  
3.7.2  
3.7.2.1  
3.7.2.2  
3.7.2.3  
3.7.2.4  
3.7.3  
3.7.3.1  
3.7.3.2  
3.7.4  
3.7.5  
4
4.1  
4.2  
4.3  
4.3.1  
4.3.2  
4.3.3  
4.3.4  
4.3.5  
4.3.6  
4.3.7  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22  
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23  
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23  
Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23  
Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24  
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24  
Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24  
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25  
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26  
CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
5
6
7
8
9
CoolMOS® Performance Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . .27  
Input Power Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29  
Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31  
Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .32  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Pin Configuration and Functionality  
1
Pin Configuration and Functionality  
1.1  
Pin Configuration with PG-DIP-7  
1.2  
Pin Functionality  
BBA (Brownout, extended Blanking time & Auto-  
restart enable)  
Pin  
Symbol Function  
The BBA pin combines the functions of brownout,  
extendable blanking time for over load protection and  
the external auto-restart enable. The brownout feature  
is to stop the switching pulse when the input voltage is  
dropped to a preset low level. The extendable blanking  
time function is to extend the built-in 20 ms blanking  
time for over load protection by adding an external  
capacitor to ground. The external auto-restart enable  
function is an external access to stop the gate  
switching and force the IC to enter auto-restart mode.  
It is triggered by pulling the pin voltage to less than  
0.4V.  
1
BBA  
FBB  
CS  
Brownout, extended Blanking  
time & Auto-restart enable  
2
3
Feedback & Burst entry/exit con-  
trol  
Current Sense/  
800V CoolMOS® Source  
4
5
n.c.  
not connected  
800V CoolMOS® Drain  
(no pin)  
Drain  
6
7
8
-
FBB (Feedback & Burst entry control)  
VCC  
GND  
Controller Supply Voltage  
Controller Ground  
The FBB pin combines the feedback function and the  
burst entry/exit control. The regulation information is  
provided by the FBB pin to the internal Protection Unit  
and the internal PWM-Comparator to control the duty  
cycle. The FBB-signal is the only control signal in case  
of light load at the Active Burst Mode. The burst entry/  
exit control provides an access to select the entry/exit  
burst mode level.  
Package PG-DIP-7  
CS (Current Sense)  
The Current Sense pin senses the voltage developed  
on the shunt resistor inserted in the source of the  
integrated CoolMOS®. If CS reaches the internal  
threshold of the Current Limit Comparator, the Driver  
output is immediately switched off. Furthermore the  
current information is provided for the PWM-  
Comparator to realize the Current Mode.  
BBA  
1
8
7
GND  
VCC  
FBB  
CS  
2
Drain (Drain of integrated CoolMOS®)  
Pin Drain is the connection to the Drain of the  
integrated CoolMOS®.  
3
4
n.c.  
5
Drain  
VCC (Power Supply)  
The VCC pin is the positive supply of the IC. The  
operating range is between 10.5V and 25V.  
Figure 1  
Pin Configuration PG-DIP-7 (top view)  
GND (Ground)  
The GND pin is the ground of the controller.  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Representative Blockdiagram  
2
Representative Blockdiagram  
Figure 2  
Representative Blockdiagram  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Functional Description  
3
Functional Description  
All values which are used in the functional description CoolSET® F3R80 is a complete solution for the low  
are typical values. For calculating the worst cases the power SMPS application.  
min/max values which can be found in section 4  
Electrical Characteristics have to be considered.  
3.2  
Power Management  
Drain  
VCC  
3.1  
Introduction  
CoolSET®-F3R80 brownout and jitter 800V version  
(ICE3AR2280JZ) is the enhanced version of the  
CoolSET®-F3R 650V version (ICE3BRxx65J). It is  
particular good for high voltage margin low power  
SMPS application such as auxiliary power supply for  
PC and server. The major characteristics are that the  
IC is developed with 800V CoolMOS® with start up cell,  
having adjustable brownout feature, running at 100KHz  
switching frequency and packed in DIP-7 package. It is  
derived from F3R 650V version. Thus most of the good  
features are retained. Besides, it includes some  
enhanced features and new features.  
Startup Cell  
CoolMOS®  
Power Management  
Internal Bias  
Undervoltage Lockout  
17V  
10.5V  
The retained good features include BiCMOS  
technology to reduce power consumption and increase  
the Vcc voltage range, cycle by cycle current mode  
control, built-in 10ms soft start to reduce the stress of  
switching elements during start up, built-in 20ms and  
extended blanking time for short period of peak power  
before entering protection, active burst mode for lowest  
standby power and propagation delay compensation  
for close power limit between high line and low line,  
frequency jittering for low EMI performance, the built-in  
auto-restart mode protections for open loop, over load,  
Vcc OVP, Vcc under voltage, etc. and also the most  
flexible external auto-restart enable, etc.  
5.0V  
Voltage  
Reference  
Power-Down Reset  
Auto Restart  
Mode  
Soft Start block  
Active Burst  
Mode  
Figure 3  
Power Management  
The enhanced features include narrowing the feedback  
voltage swing from 0.5V to 0.3V during burst mode so  
that the output voltage ripple can be reduced by 40%,  
reduction of the fast voltage fall time of the MOSFET by  
increasing the soft turn-on time and addition of 50W  
turn-on resistor, faster start up time by optimizing the  
Vcc capacitor to 10uF and over temperature protection  
with 50°C hysteresis.  
The Undervoltage Lockout monitors the external  
supply voltage VVCC. When the SMPS is plugged to the  
main line the internal Startup Cell is biased and starts  
to charge the external capacitor CVCC which is  
connected to the VCC pin. This VCC charge current is  
controlled to 0.9mA by the Startup Cell. When the VVCC  
exceeds the on-threshold VCCon=17V the bias circuit  
are switched on. Then the Startup Cell is switched off  
by the Undervoltage Lockout and therefore no power  
losses present due to the connection of the Startup Cell  
to the Drain voltage. To avoid uncontrolled ringing at  
switch-on, a hysteresis start up voltage is implemented.  
The switch-off of the controller can only take place  
when VVCC falls below 10.5V after normal operation  
was entered. The maximum current consumption  
before the controller is activated is about 200mA.  
The new features include adjustable brownout for  
reliable output performance, selectable entry and exit  
burst mode so that smaller entry/exit power to burst  
mode or even no burst mode is possible and the  
propagation delay compensation for burst mode so that  
the entry/exit burst mode power is close between high  
line and low line.  
In summary, the CoolSET® F3R80 provides good  
voltage margin of MOSFET, lowest standby power,  
flexible burst level, reduced output ripple during burst  
mode, reliable output with brownout feature, accurate  
power limit for both maximum power and burst power,  
low EMI with frequency jittering and soft gate drive,  
built-in and flexible protections, etc. Therefore,  
When VVCC falls below the off-threshold VCCoff=10.5V,  
the bias circuit is switched off and the soft start counter  
is reset. Thus it ensures that at every startup cycle the  
soft start starts at zero.  
The internal bias circuit is switched off if Auto Restart  
Mode is entered. The current consumption is then  
reduced to 320mA.  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Functional Description  
Once the malfunction condition is removed, this block In case the amplified current sense signal exceeds the  
will then turn back on. The recovery from Auto Restart FBB signal the on-time ton of the driver is finished by  
Mode does not require re-cycling the AC line.  
resetting the PWM-Latch (Figure 5).  
The primary current is sensed by the external series  
resistor RSense inserted in the source of the integrated  
CoolMOS®. By means of Current Mode regulation, the  
secondary output voltage is insensitive to the line  
variations. The current waveform slope will change with  
the line variation, which controls the duty cycle.  
The external RSense allows an individual adjustment of  
the maximum source current of the integrated  
CoolMOS®.  
When Active Burst Mode is entered, the internal Bias is  
switched off most of the time but the Voltage Reference  
is kept alive in order to reduce the current consumption  
below 620mA.  
3.3  
Improved Current Mode  
Soft-Start Comparator  
To improve the Current Mode during light load  
conditions the amplified current ramp of the PWM-OP  
is superimposed on a voltage ramp, which is built by  
the switch T2, the voltage source V1 and a resistor R1  
(see Figure 6). Every time the oscillator shuts down for  
maximum duty cycle limitation the switch T2 is closed  
by VOSC. When the oscillator triggers the Gate Driver,  
T2 is opened so that the voltage ramp can start.  
PWM-Latch  
FBB  
R
Q
C8  
Driver  
S
Q
0.6V  
Soft-Start Comparator  
PWM Comparator  
PWM OP  
x3.25  
FBB  
CS  
C8  
PWM-Latch  
Improved  
Current Mode  
Oscillator  
VOSC  
time delay  
circuit (156ns)  
Figure 4  
Current Mode  
Gate Driver  
Current Mode means the duty cycle is controlled by the  
slope of the primary current. This is done by comparing  
the FBB signal with the amplified current sense signal.  
0.6V  
10k  
X3.25  
Amplified Current Signal  
FBB  
R1  
T2  
V1  
PWM OP  
Voltage Ramp  
0.6V  
Driver  
t
t
Figure 6  
Improved Current Mode  
In case of light load the amplified current ramp is too  
small to ensure a stable regulation. In that case the  
Voltage Ramp is a well defined signal for the  
comparison with the FBB-signal. The duty cycle is then  
controlled by the slope of the Voltage Ramp.  
By means of the time delay circuit which is triggered by  
the inverted VOSC signal, the Gate Driver is switched-off  
until it reaches approximately 156ns delay time (Figure  
ton  
Figure 5  
Pulse Width Modulation  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Functional Description  
7). It allows the duty cycle to be reduced continuously  
till 0% by decreasing VFBB below that threshold.  
5V  
RFB  
VOSC  
Soft-Start Comparator  
max.  
Duty Cycle  
FBB  
PWM-Latch  
C8  
PWM Comparator  
Voltage  
Ramp  
t
0.6V  
0.6V  
FBB  
Optocoupler  
PWM OP  
CS  
X3.25  
Gate  
Driver  
t
156ns time delay  
Improved  
Current Mode  
Figure 8  
PWM Controlling  
t
Figure 7  
Light Load Conditions  
3.4  
Startup Phase  
3.3.1  
PWM-OP  
The input of the PWM-OP is applied over the internal  
leading edge blanking to the external sense resistor  
RSense connected to pin CS. RSense converts the source  
current into a sense voltage. The sense voltage is  
amplified with a gain of 3.25 by PWM OP. The output  
of the PWM-OP is connected to the voltage source V1.  
The voltage ramp with the superimposed amplified  
current signal is fed into the positive inputs of the PWM-  
Comparator C8 and the Soft-Start-Comparator (Figure  
8).  
Soft Start counter  
SoftS  
Soft Start  
Soft Start  
Soft-Start  
Comparator  
Gate Driver  
3.3.2  
PWM-Comparator  
C7  
&
The PWM-Comparator compares the sensed current  
signal of the integrated CoolMOS® with the feedback  
signal VFBB (Figure 8). VFBB is created by an external  
optocoupler or external transistor in combination with  
the internal pull-up resistor RFB and provides the load  
information of the feedback circuitry. When the  
amplified current signal of the integrated CoolMOS®  
exceeds the signal VFBB the PWM-Comparator  
switches off the Gate Driver.  
G7  
0.6V  
CS  
x3.25  
PWM OP  
Figure 9  
Soft Start  
Version 2.1a  
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ICE3AR2280JZ  
Functional Description  
In the Startup Phase, the IC provides a Soft Start After the IC is switched on, the VSoftS voltage is  
period to control the primary current by means of a duty controlled such that the voltage is increased step-  
cycle limitation. The Soft Start function is a built-in wisely (32 steps) with the increase of the counts. The  
function and it is controlled by an internal counter.  
Soft Start counter would send a signal to the current  
sink control in every 300us such that the current sink  
decrease gradually and the duty ratio of the gate drive  
increases gradually. The Soft Start will be finished in  
10ms (tSoft-Start) after the IC is switched on. At the end of  
the Soft Start period, the current sink is switched off.  
.
Within the soft start period, the duty cycle is increasing  
from zero to maximum gradually (see Figure 12).  
VSoftS  
tSoft-Start  
VSOFTS32  
VSoftS  
t
VSoftS2  
VSoftS1  
Gate  
Driver  
t
Figure 10  
Soft Start Phase  
Figure 12 Gate drive signal under Soft-Start Phase  
When the VVCC exceeds the on-threshold voltage, the  
IC starts the Soft Start mode (Figure 10).  
In addition to Start-Up, Soft-Start is also activated at  
each restart attempt during Auto Restart.  
The function is realized by an internal Soft Start  
resistor, an current sink and a counter. And the  
amplitude of the current sink is controlled by the  
counter (Figure 11).  
VSoftS  
tSoft-Start  
VSOFTS32  
5V  
RSoftS  
VFB  
SoftS  
t
4.5V  
VOUT  
t
32I  
4I  
8I  
2I  
I
Soft Start  
Counter  
VOUT  
tStart-Up  
t
Figure 11  
Soft Start Circuit  
Figure 13 Start Up Phase  
Version 2.1a  
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Functional Description  
The Start-Up time tStart-Up before the converter output 3.5.2  
PWM-Latch FF1  
voltage VOUT is settled, must be shorter than the Soft-  
Start Phase tSoft-Start (Figure 13). By means of Soft-Start  
there is an effective minimization of current and voltage  
stresses on the integrated CoolMOS®, the clamp circuit  
and the output rectifier and it helps to prevent  
saturation of the transformer during Start-Up.  
The output of the oscillator block provides continuous  
pulse to the PWM-Latch which turns on/off the  
integrated CoolMOS®. After the PWM-Latch is set, it is  
reset by the PWM comparator, the Soft Start  
comparator or the Current -Limit comparator. When it is  
in reset mode, the output of the driver is shut down  
immediately.  
3.5  
PWM Section  
3.5.3  
Gate Driver  
VCC  
0.75  
PWM Section  
Oscillator  
PWM-Latch  
Duty Cycle  
max  
1
Clock  
50  
Frequency  
Jitter  
Gate  
CoolMOS®  
Soft Start  
Block  
FF1  
Q
Gate Driver  
&
S
R
Soft Start  
Comparator  
1
Gate Driver  
G8  
PWM  
G9  
Figure 15  
Gate Driver  
Comparator  
The driver-stage is optimized to minimize EMI and to  
provide high circuit efficiency. This is done by reducing  
the switch on slope when exceeding the integrated  
CoolMOS® threshold. This is achieved by a slope  
control of the rising edge at the driver’s output (Figure  
16) and adding a 50W gate turn on resistor (Figure 15).  
Thus the leading switch on spike is minimized.  
Current  
Limiting  
CoolMOS®  
Gate  
Figure 14  
PWM Section Block  
3.5.1  
Oscillator  
(internal)  
VGate  
The oscillator generates a fixed frequency of 100KHz  
with frequency jittering of ±4% (which is ±4KHz) at a  
jittering period of 4ms.  
A capacitor, a current source and current sink which  
determine the frequency are integrated. The charging  
and discharging current of the implemented oscillator  
capacitor are internally trimmed in order to achieve a  
very accurate switching frequency. The ratio of  
controlled charge to discharge current is adjusted to  
reach a maximum duty cycle limitation of Dmax=0.75.  
typ. t = 160ns  
4.6V  
Once the Soft Start period is over and when the IC goes  
into normal operating mode, the switching frequency of  
the clock is varied by the control signal from the Soft  
Start block. Then the switching frequency is varied in  
range of 100KHz ± 4KHz at period of 4ms.  
t
Figure 16  
Gate Rising Slope  
Furthermore the driver circuit is designed to eliminate  
cross conduction of the output stage.  
Version 2.1a  
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Functional Description  
During power up, when VCC is below the undervoltage activated, the current limiting is reduced to Vcsth_burst  
.
lockout threshold VVCCoff, the output of the Gate Driver This voltage level determines the maximum power  
is set to low in order to disable power transfer to the level in Active Burst Mode.  
secondary side.  
3.6.1  
Leading Edge Blanking  
3.6  
Current Limiting  
VSense  
PWM Latch  
FF1  
Vcsth  
Current Limiting  
tLEB = 220ns/180ns  
Propagation-Delay  
Compensation  
Vcsth  
C10  
LEB  
220ns  
S4  
PWM-OP  
t
LEB  
180ns  
&
Figure 18  
Leading Edge Blanking  
C12  
G10  
Whenever the integrated CoolMOS® is switched on, a  
leading edge spike is generated due to the primary-  
side capacitances and reverse recovery time of the  
secondary-side rectifier. This spike can cause the gate  
drive to switch off unintentionally. In order to avoid a  
premature termination of the switching pulse, this spike  
is blanked out with a time constant of tLEB = 220ns for  
normal load and tLEB = 180ns for burst mode.  
VCSth_burst  
Propagation-Delay  
Compensation-Burst  
Active Burst  
Mode  
or  
G13  
VFB_burst  
10k  
C5  
1pF  
D1  
3.6.2  
Propagation Delay Compensation  
(patented)  
CS  
FBB  
In case of overcurrent detection, there is always  
propagation delay to switch off the integrated  
CoolMOS®. An overshoot of the peak current Ipeak is  
induced to the delay, which depends on the ratio of dI/  
dt of the peak current (Figure 19).  
Figure 17  
Current Limiting Block  
There is a cycle by cycle peak current limiting operation  
realized by the Current-Limit comparator C10. The  
source current of the integrated CoolMOS® is sensed  
via an external sense resistor RSense. By means of  
RSense the source current is transformed to a sense  
voltage VSense which is fed into the pin CS. If the voltage  
VSense exceeds the internal threshold voltage Vcsth, the  
comparator C10 immediately turns off the gate drive by  
resetting the PWM Latch FF1.  
Signal2  
IOvershoot2  
Signal1  
tPropagation Delay  
ISense  
Ipeak2  
Ipeak1  
ILimit  
A Propagation Delay Compensation is added to  
support the immediate shut down of the integrated  
CoolMOS® with very short propagation delay. Thus the  
influence of the AC input voltage on the maximum  
output power can be reduced to minimal. This  
compensation applies to both the peak load and burst  
mode.  
IOvershoot1  
t
In order to prevent the current limit from distortions  
caused by leading edge spikes, a Leading Edge  
Blanking (LEB) is integrated in the current sense path  
for the comparators C10, C12 and the PWM-OP.  
Figure 19  
Current Limiting  
The overshoot of Signal2 is larger than of Signal1 due  
to the steeper rising waveform. This change in the  
slope is depending on the AC input voltage.  
Propagation Delay Compensation is integrated to  
The output of comparator C12 is activated by the Gate  
G10 if Active Burst Mode is entered. When it is  
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ICE3AR2280JZ  
Functional Description  
reduce the overshoot due to dI/dt of the rising primary Similarly, the same concept of propagation delay  
current. Thus the propagation delay time between compensation is also implemented in burst mode with  
exceeding the current sense threshold Vcsth and the reduced level, Vcsth_burst (Figure 17). With this  
switching off of the integrated CoolMOS® is implementation, the entry and exit burst mode power  
compensated over temperature within a wide input can be very close between low line and high line input  
range. Current Limiting is then very accurate.  
voltage.  
For example, Ipeak = 0.5A with RSense = 2. The current  
sense threshold is set to a static voltage level Vcsth=1V  
without Propagation Delay Compensation. A current  
ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a  
propagation delay time of tPropagation Delay =180ns leads  
to an Ipeak overshoot of 14.4%. With the propagation  
delay compensation, the overshoot is only around 2%  
(Figure 20).  
3.7  
Control Unit  
The Control Unit contains the functions for Active Burst  
Mode and Auto Restart Mode. The Active Burst Mode  
and the Auto Restart Mode both have 20ms internal  
blanking time. For the over load Auto Restart Mode, the  
20ms blanking time can be further extended by adding  
an external capacitor at BBA pin. With the blanking  
time, the IC avoids entering into those two modes  
accidentally. Those buffer time is very useful for the  
application which works in short duration of peak power  
occasionally.  
with compensation  
without compensation  
V
1,3  
1,25  
1,2  
3.7.1  
Basic and Extendable Blanking Mode  
1,15  
1,1  
5.0V  
1,05  
1
Auto  
Restart  
Mode  
0,95  
0,9  
Ichg_EB  
0
0,2  
0,4  
0,6  
0,8  
1
1,2  
1,4  
1,6  
1,8  
2
V
dVSense  
dt  
s  
S1  
Spike  
Blanking  
30us  
4.5V  
Figure 20  
Overcurrent Shutdown  
C11  
C3  
BBA  
RBO2  
#
The Propagation Delay Compensation is realized by  
means of a dynamic threshold voltage Vcsth (Figure 21).  
In case of a steeper slope the switch off of the driver is  
earlier to compensate the delay.  
&
Counter  
CT1  
CBK  
G5  
500  
0.9V  
S2  
VOSC  
max. Duty Cycle  
FBB  
20ms  
C4  
Blanking  
Time  
off time  
Control Unit  
4.5V  
VSense  
Propagation Delay  
t
Figure 22  
Basic and Extendable Blanking Mode  
There are 2 kinds of Blanking mode; basic mode and  
the extendable mode. The basic mode is a built-in  
20ms blanking time while the extendable mode can  
extend this blanking time by connecting an external  
capacitor to the BBA pin. For the extendable mode, the  
gate G5 remains blocked even though the 20ms  
blanking time is reached. After reaching the 20ms  
blanking time the counter is activated and the switch S1  
is turned on to charge the voltage of BBA pin by the  
constant current source, Ichg_EB. When the voltage of  
BBA pin hits 4.5V, which is sensed by comparator C11,  
the counter will increase the counter by 1. Then it  
Vcsth  
Signal1  
Signal2  
t
Figure 21  
Dynamic Voltage Threshold Vcsth  
Version 2.1a  
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Functional Description  
switches off the switch S1 and turns on the switch S2. Most of the burst mode design in the market will  
The voltage at BBA pin will be discharged through a provide a fixed entry burst mode level which is a ratio  
500W resistor. When the voltage drops to 0.9V which is to the maximum power of the design. F3R80 provides  
sensed by comparator C3, the switch S2 will be turned a more flexible level which can be selected externally.  
off and the switch S1 will be turned on. Then the The provision also includes not entering burst mode.  
constant current Ichg_EB will charge the CBK capacitor  
again. When the voltage at BBA hits 4.5V which is  
sensed by comparator C11, the counter will increase  
the count to 2. The process repeats until it reaches total  
count of 256 (Figure 23). Then the counter will release  
a high output signal. When the AND gate G5 detects  
both high signals at the inputs, it will activate the 30ms  
spike blanking circuit and finally the auto-restart mode  
will be activated.  
Propagation delay is the major contributor for the  
power control variation for DCM flyback converter. It is  
proved to be effective in the maximum power control.  
F3R80 also apply the same concept in the burst mode.  
Therefore, the entry and exit burst mode power is also  
finely controlled during burst mode.  
The feedback control swing during burst mode will  
affect the output ripple voltage directly. F3R80 reduces  
the swing from 0.5V to 0.3V. Therefore, it would have  
around 40% improvement for the output ripple.  
256 counts  
4.5V  
Current Limiting  
CS  
Vcsth_burst C12  
G10 & FF1  
VBBA  
auto  
normal  
0.9V  
restart  
operation  
Internal  
Bias  
Burst detect  
and adjust  
extended blanking time  
Figure 23  
Waveform at extended blanking time  
20ms Blanking  
Time  
VFB_burst  
C5  
For example, if CBK=0.1mF, Ichg_EB=720mA  
Extended blanking time 256*(CBK*(4.5V-0.9V)/Ichg_EB  
CBK*500*ln(4.5/0.9)) = 148.6ms  
Total blanking time = 20ms+ 148.6ms =168.6ms  
=
+
FBB  
CFB  
Active Burst  
Mode  
C13  
4.0V  
If there is a resistor RBO2 connected to BBA pin, the  
effective charging current will be reduced. The blanking  
time will be increased.  
3.5V  
C6a  
For example, if CBK=0.1mF, Ichg_EB=720mA, RBO2=12.8KW,  
Ichg_EB’=Ichg_EB-(4.5V+0.9V)/(2*RBO2)=509 mA  
&
Extended blanking time  
= 256*(CBK*(4.5V-0.9V)/Ichg_EB’ +  
G11  
C6b  
CBK*500*ln(4.5/0.9)) = 201.6ms  
Total blanking time = 20ms+201.6 = 221.6ms  
where Ichg_EB’=net charging current to CBK  
3.2V  
Control Unit  
Figure 24  
Active Burst Mode  
Note: The above calculation does not include the effect of the  
brownout circuit where there is extra biasing current flowing from  
the input. That means the extended blanking time will be  
shortened with the line voltage change if brownout circuit is  
implemented.  
The Active Burst Mode is located in the Control Unit.  
Figure 24 shows the related components.  
3.7.2.1  
Selectable burst entry level  
3.7.2  
Active Burst Mode (patented)  
The burst mode entry level can be selected by  
changing the different capacitor CFB at FBB pin. There  
are 4 levels to be selected with different capacitor  
which are targeted for 10%, 6.67%, 4.38% and 0% of  
the maximum input power. At the same time, the exit  
burst level are targeted to 20%, 13.3%, 9.6% and 0%  
of the maximum power accordingly. The corresponding  
capacitance range is from 6.8nF to 100pF. The below  
table is the recommended capacitance range for the  
entry and exit level with the CFB capacitor.  
To increase the efficiency of the system at light load,  
the most effective way is to operate at burst mode.  
Starting from CoolSET® F3, the IC has been employing  
the active burst mode and it can achieve the lowest  
standby power. F3R80 adopts the same concept with  
some more innovative improvements to the feature. It  
includes the adjustable entry burst level, close power  
control between high line and low line and the smaller  
output ripple during burst mode.  
Version 2.1a  
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ICE3AR2280JZ  
Functional Description  
falls below VFB_burst, it starts to count. When the counter  
reaches 20ms and FBB signal is still below VFB_burst, the  
system enters the Active Burst Mode. This time window  
prevents a sudden entering into the Active Burst Mode  
due to large load jumps.  
Entry level  
% of  
Exit level  
CFB  
>=6.8nF  
VFB_burst  
1.60V  
1.42V  
1.27V  
never  
% of  
Vcsth_burst  
Pin_max  
Pin_max  
After entering Active Burst Mode, a burst flag is set and  
the internal bias is switched off in order to reduce the  
current consumption of the IC to about 620uA.  
10%  
20%  
0.45V  
(5%,X7R)  
1nF~2.2nF  
(1%,COG)  
6.67%  
4.38%  
0%  
13.3%  
9.6%  
0%  
0.37V  
It needs the application to enforce the VCC voltage  
above the Undervoltage Lockout level of 10.5V such  
that the Startup Cell will not be switched on  
accidentally. Or otherwise the power loss will increase  
drastically. The minimum VCC level during Active Burst  
Mode depends on the load condition and the  
application. The lowest VCC level is reached at no load  
condition.  
220pF~470pF  
(1%,COG)  
0.31V  
<=100pF  
(1%,COG)  
always  
The selection is at the 1st 1ms of the UVLO “ON” (Vcc  
> 17V) during the 1st start up but it does not detect in  
the subsequent re-start due to auto-restart protection.  
3.7.2.3  
Working in Active Burst Mode  
In case there is protection triggered such as auto After entering the Active Burst Mode, the FBB voltage  
restart enable or brownout before starts up, the rises as VOUT starts to decrease, which is due to the  
detection will be held until the protection is removed. inactive PWM section. The comparator C6a monitors  
When the Vcc reaches the UVLO “ON” in the 1st start the FBB signal. If the voltage level is larger than 3.5V,  
up, the capacitor CFB at FBB pin is charged by a 5V the internal circuit will be activated; the Internal Bias  
voltage source through the RFB resistor. When the circuit resumes and starts to provide switching pulse. In  
voltage at FBB pin hits 4.5V, the FF4 will be set, the Active Burst Mode the gate G10 is released and the  
switch S9 is turned “ON” and the counter will increase current limit is reduced to Vcsth_burst (Figure 2 and  
by 1. Then the CFB is discharged through a 500W 24). In one hand, it can reduce the conduction loss and  
resistor. After reaching 0.5V, the FF4 is reset and the the other hand, it can reduce the audible noise. If the  
switch S9 is turned “OFF”. Then the CFB capacitor is load at VOUT is still kept unchanged, the FBB signal  
charged by the 5V voltage source again until it reaches will drop to 3.2V. At this level the C6b deactivates the  
4.5V. The process repeats until the end of 1ms. Then internal circuit again by switching off the Internal Bias.  
the detection is ended. After that, the total number of The gate G11 is active again as the burst flag is set  
count in the counter is compared and the VFB-burst and after entering Active Burst Mode. In Active Burst Mode,  
the Vcs_burst are selected accordingly (Figure 25).  
the FBB voltage is changing like a saw tooth between  
3.2V and 3.5V (Figure 26).  
3.7.2.4  
Leaving Active Burst Mode  
VFB_burst  
Comparator  
counter  
VCSth_burst  
5V  
The FBB voltage will increase immediately if there is a  
high load jump. This is observed by the comparator  
C13 (Figure 24). Since the current limit is reduced to  
31%~45% of the maximum current during active burst  
mode, it needs a certain load jump to rise the FBB  
signal to exceed 4.0V. At that time the comparator C5  
resets the Active Burst Mode control which in turn  
blocks the comparator C12 by the gate G10. The  
maximum current can then be resumed to stabilize  
VOUT.  
logic  
UVLO  
RFB  
500  
4.5V  
0.5V  
C19  
S
Q
FBB  
CFB  
FF4  
C20  
R
1ms  
timer  
UVLOduring  
1st startup  
S9  
Control Unit  
Figure 25  
Entry burst mode detection  
3.7.2.2  
Entering Active Burst Mode  
The FBB signal is kept monitoring by the comparator  
C5 (Figure 24). During normal operation, the internal  
blanking time counter is reset to 0. When FBB signal  
Version 2.1a  
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ICE3AR2280JZ  
Functional Description  
detect and soft start switching pulses maintained. If the  
fault persists, it would continue the auto-restart mode.  
However, if the fault is removed, it can release to  
normal operation only at the even number auto restart  
cycle (Figure 27).  
VFBB  
Entering  
Active Burst  
Mode  
Leaving  
Active Burst  
Mode  
4.0V  
3.5V  
3.2V  
Fault  
detected  
Startup and detect  
No detect  
No detect  
VFB_burst  
VVCC  
Blanking Timer  
17V  
t
20ms Blanking Time  
10.5V  
t
VCS  
VCS  
t
t
t
t
t
t
Figure 27  
Odd skip auto restart waveform  
Current limit level  
during Active Burst  
Mode  
Vcsth  
Non switch auto restart mode is similar to odd skip auto  
restart mode except the start up switching pulses are  
also suppressed at the even number of the restart  
cycle. The detection of fault still remains at the even  
number of the restart cycle. When the fault is removed,  
the IC will resume to normal operation at the even  
number of the restart cycle (Figure 28).  
Vcsth_burst  
VVCC  
10.5V  
Fault  
detected  
Startup and detect  
No detect  
No detect  
VVCC  
IVCC  
17V  
3.4mA  
10.5V  
620uA  
t
VCS  
No switching  
VOUT  
t
Figure 28  
non switch auto restart waveform  
The main purpose of the odd skip auto restart is to  
extend the restart time such that the power loss during  
auto restart protection can be reduced. This feature is  
particularly good for smaller Vcc capacitor where the  
restart time is shorter.  
Figure 26  
Signals in Active Burst Mode  
3.7.3  
Protection Modes  
The following table lists the possible system failures  
and the corresponding protection modes.  
The IC provides Auto Restart mode as the major  
protection feature. Auto Restart mode can prevent the  
SMPS from destructive states. There are 3 kinds of  
auto restart mode; normal auto restart mode, odd skip  
auto restart mode and non switch auto restart mode.  
Odd skip auto restart mode is that there is no detect of  
fault and no switching pulse for the odd number restart  
cycle. At the even number of restart cycle the fault  
VCC Over voltage (1)  
VCC Over voltage (2)  
Over load  
Odd skip Auto Restart Mode  
Odd skip Auto Restart Mode  
Odd skip Auto Restart Mode  
Odd skip Auto Restart Mode  
Open Loop  
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Functional Description  
base pin of an external transistor, TAE at the BBA pin.  
When this function is enabled, it will enter into the non  
switch auto restart mode. The gate drive is stopped and  
there is no switching pulse before it is recovered  
(Figure 29).  
VCC Undervoltage  
Short Optocoupler  
Over temperature  
Normal Auto Restart Mode  
Normal Auto Restart Mode  
Non switch Auto Restart Mode  
External protection enable Non switch Auto Restart Mode  
The Vcc undervoltage and short opto-coupler will go  
into the normal auto restart mode inherently.  
3.7.3.1  
Vcc OVP, OTP, external protection  
enable and Vcc under voltage  
In case of VCC undervoltage, the Vcc voltage drops  
indefinitely. When it drops below the Vcc under voltage  
lock out “OFF” voltage (10.5V), the IC will turn off the  
IC and the startup cell will turn on again. Then the Vcc  
voltage will be charged up to UVLO “ON” voltage (17V)  
and the IC turns on again provided the startup cell  
charge up current is not drained by the fault. If the fault  
is not removed, the Vcc will continue to drop until it hits  
UVLO “OFF” voltage and the restart cycle repeats.  
BBA  
Auto Restart  
Mode Reset  
VVCC < 10.5V  
Stop  
gate  
drive  
C9  
0.4V  
TAE  
Auto-  
restart  
Enable  
Signal  
Thermal Shutdown  
Auto Restart  
mode  
Short Optocoupler can lead to Vcc undervoltage  
because once the opto-coupler (transistor side) is  
shorted, the feedback voltage will drop to zero and  
there will be no switching pulse. Then the Vcc voltage  
will drop same as the Vcc undervoltage.  
T >130°C  
j
Spike  
Blanking  
30µs  
25.5V  
120µs blanking  
time  
C2  
VCC  
FBB  
C1  
C4  
Voltage  
Reference  
&
20.5V  
4.5V  
3.7.3.2  
Over load, open loop protection  
G1  
Control Unit  
Voltage  
5.0V  
softs_period  
Reference  
Auto Restart  
Mode Reset  
VVCC < 10.5V  
Figure 29  
Vcc OVP, OTP, external protection  
enable  
Ichg_EB  
Auto  
Restart  
Mode  
There are 2 types of Vcc over voltage protection; Vcc  
OVP (1) and Vcc OVP (2). The Vcc OVP (1) takes  
action only during the soft start period. The Vcc OVP  
(2) takes the action in any conditions.  
S1  
4.5V  
Spike  
Blanking  
30us  
C11  
C3  
CBK  
BBA  
RBO2  
#
Vcc OVP (1) condition is when VVCC voltage is > 20.5V,  
VFBB voltage is > 4.5V and during soft start period, the  
IC enters into odd skip Auto Restart Mode. This  
condition likely happens during start up at open loop  
fault. (Figure 29).  
counter  
CT1  
500  
0.9V  
&
G5  
S2  
Vcc OVP (2) condition is when VVCC voltage is > 25.5V,  
the IC enters into odd skip Auto Restart Mode (Figure  
29).  
FBB  
20ms  
Blanking  
Time  
C4  
4.5V  
The over temperature protection OTP is sensed inside  
the controller IC. The Thermal Shutdown block keeps  
on monitoring the junction temperature of the  
controller. After detecting a junction temperature higher  
than 130°C, the IC will enter into the non switch Auto  
Restart mode. The F3R80 has also implemented with  
a 50°C hysteresis. That means the IC can only be  
recovered when the controller junction temperature is  
dropped 50°C lower than the over temperature trigger  
point (Figure 29).  
Control Unit  
Figure 30  
Over load, open loop protection  
In case of Overload or Open Loop, the VFBB voltage  
exceeds 4.5V which will be observed by comparator  
C4. Then the built-in blanking time counter starts to  
count. When it reaches 20ms, the extended blanking  
time counter CT1 is activated. The switch S2 is turned  
on and the voltage at the BBA pin will be discharged  
through 500W resistor. When it drops to 0.9V, the  
switch S2 is turned off and the Switch S1 is turned on.  
Then a constant current source Ichg_EB will start to  
charge up BBA pin. When the voltage hits 4.5V which  
is monitored by comparator C11, the switch S1 is  
The external auto restart enable feature can provide a  
flexibility to  
a customer’s self-defined protection  
feature. This function can be triggered by pulling down  
the VBBA voltage to < 0.4V. Or it can simply trigger the  
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Functional Description  
turned off and the count will increase by 1. Then the release a low signal to the flip flop FF5 and the negative  
switch S2 will turn on again and the voltage will drop to output of FF5 will release a high signal to turn on the  
0.9V and rise to 4.5V again. The count will then switch S3. The constant load LD6 will start to draw  
increase by 1 again. When the total count reaches 256, constant current Ichg_BO from the BBA pin. That means  
the counter CT1 will stop and it will release a high the brownout mode is default “ON” during the system  
output signal. When both the input signals at AND gate starts up.  
G5 is high, the odd skip Auto Restart Mode is activated  
after the 30us spike blanking time (Figure 30).  
Vbulk  
5µs  
blanking  
time  
The total blanking time depends on the addition of the  
built-in and the extended blanking time. If there is no  
CBK capacitor at BBA pin, the count will finish within  
0.1ms and the equivalent blanking time is just the built-  
in time of 20ms. However, if the CBK capacitor is big  
enough, it can be as long as 1s. If CBK is 0.1uF and  
Ichg_EB is 720uA, the extendable blanking time is around  
148.6ms and the total blanking time is 168.6ms.  
Brownout  
mode  
RBO1  
G21  
BBA  
S
C14  
30µs~60µs  
blanking time  
0.9V  
RBO2  
Q
R
FF5  
G22  
Since the BBA pin is a multi-function pin, it would share  
with different functions. The resistor RBO2 from  
brownout feature application may however affect the  
extendable blanking time (Figure 30). Thus it should  
take the RBO2 into the calculation of the extendable  
blanking time. For example the extended blanking time  
may be changed from 148.6ms to 201.6ms for without  
and having the 12.8KW RBO2 resistor. The list below  
shows one particular CBK, RBO2 vs blanking time.  
G20  
UVLO  
S3  
LD6  
Ichg_BO  
Control Unit  
Figure 31  
Brownout detection circuit  
Once the system enters the brownout mode, there will  
be no switching pulse and the IC enters into another  
type auto-restart mode which is similar to the protection  
auto-restart mode but the IC will monitor the BBA signal  
in each restart cycle (Figure 32).  
CBK  
RBO2  
Extended  
blanking time  
Overall blanking  
time  
0.1uF  
0.1uF  
0.1uF  
-
148.6ms  
162.8ms  
201.6ms  
168.6ms  
182.8ms  
221.6ms  
37.5KW  
12.8KW  
Brownout  
detected  
Startupanddetect BBAvoltage  
Another factor to affect the extended blanking time is  
the input voltage through the RB01 and RB02. It would, on  
the contrary, reduce the extended blanking time.  
V
VCC  
17V  
3.7.4  
Brownout Mode  
10.5V  
When the AC input voltage is removed, the voltage at  
the bulk capacitor will fall. When it reaches a point that  
the system is greater than the system allowed  
maximum power, the system may go into over load  
protection. However, this kind of protection is not  
welcome for some of the applications such as auxiliary  
power for PC/server system because the output is in  
hiccup mode due to over load protection (auto restart  
mode). The brownout mode is to eliminate this  
phenomenon. The IC will sense the input voltage  
through the bulk capacitor to the BBA pin by 2 potential  
divider resistors, RBO1 and RBO2 (Figure 31).  
t
VCS  
t
Figure 32  
Brownout mode waveform  
The voltage at bulk capacitor Vbulk continues to  
increase and so is the voltage at BBA. When the BBA  
voltage reaches 0.9V, the output of OPAMP C14 will  
become low. Through the inverter gate G21, the “S”  
input of the flip flop FF5 is changed to high. Then the  
negative output of FF5 is low. The brownout mode is  
then “OFF” and the constant current load LD6 is also  
“OFF” through the turn-off of the S3. The system will  
When the system is powered up, the bulk capacitor and  
the Vcc capacitor are charged up at the same time.  
When the Vcc voltage is charged to >7V, the brownout  
circuit start to operate (Figure 31). Since the UVLO is  
still at low level as the Vcc voltage does not reach the  
17V UVLO “ON” voltage. The NAND gate G20 will  
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Functional Description  
turn on with soft start in the coming restart cycle when Note: The above calculation assumes the tapping point  
Vcc reaches the Vcc “ON” voltage 17V.  
(bulk capacitor) has a stable voltage with no ripple  
voltage. If there is ripple in the input voltage, it should  
When there is an input voltage drop, the BBA voltage  
also drops. When the voltage at BBA pin falls below  
0.9V, the output of OPAMP C14 is changed to high.  
The inverter gate G22 will change the high input to low  
output. Then the NAND gate G22 will have a high  
output. The negative output of the flip flop FF5 is then  
become high. The constant load LD6 is “ON” again and  
the IC enters the brownout mode where the Vcc swings  
between 10.5V and 17V without any switching pulse.  
take the highest voltage for the calculation; VBO_l  
+
ripple voltage. Besides that the low side brownout  
voltage VBO_l added with the ripple voltage at the  
tapping point should always be lower than the high side  
brownout voltage (VBO_h); VBO_h > VBO_l + ripple  
voltage. Otherwise, the brownout feature cannot work  
properly. In short, when there is a high load running in  
system before entering brownout, the input ripple  
voltage will increase and the brownout voltage will  
increase (VBO_l = VBO_l + ripple voltage) at the same  
time. If the VBO_hys is set too small and is close to the  
ripple voltage, then the brownout feature cannot work  
properly (VBO_l = VBO_h).  
The formula to calculate the RBO1 and RBO2 are as  
below.  
RBO1=Vhys/Ichg_BO  
RBO2=Vref_BO*RBO1/(VBO_l -Vref_BO  
)
If the brownout feature is not needed, it needs to tie the  
BBA pin to the Vcc pin through a current limiting  
resistor, 500KW~1MW. The BBA pin cannot be in  
floating condition. If the brownout feature is disabled  
with a tie up resistor, there is a limitation of the  
capacitor CBK at the BBA pin. It is as below.  
where VBO_l: input brownout voltage (low point); Vhys  
:
input brownout hysteresis voltage; Vref_BO: IC reference  
voltage for brownout; RBO1 and RBO2: resistors divider  
from input voltage to BBA pin  
For example,  
Vcc tie up resistor  
500KW  
CBK_max  
0.47uF  
0.22uF  
Ichg_BO=10uA, Vref_BO=0.9V,  
1
2
Case 1:  
1MW  
if brownout voltage is 70Vac on and 100Vac off,  
then brownout voltage, VBO_l=100Vdc,  
hysteresis voltage, VBO_hys=43Vdc,  
RBO1=4.3MW, RBO2=39KW  
3.7.5  
Action sequence at BBA pin  
Since there are 3 functions at the same BBA pin;  
brownout, extended blanking time and the auto-restart  
enable, the actions of sequence are set as per the  
below table in case of several features happens  
simultaneously.  
Case 2:  
if brownout voltage is 100Vac on and 120Vac off,  
then brownout voltage, VBO_l=141Vdc,  
hysteresis voltage, VBO_hys=28Vdc,  
RBO1=2.8MW, RBO2=18KW  
1st Auto-restart  
enable  
Extended  
blanking time  
Brownout  
Brownout  
Brownout  
Brownout  
2nd  
Auto-restart  
enable  
Auto-restart  
enable  
Auto-restart  
enable  
Extended  
blanking time  
Auto-restart  
enable  
Extended  
blanking time  
Case 3:  
if brownout voltage is 120Vac on and 160Vac off,  
then brownout voltage, VBO_l=169Vdc,  
hysteresis voltage, VBO_hys=56Vdc,  
RBO1=5.6MW, RBO2=30KW  
Brownout  
Auto-restart  
enable  
Extended  
blanking time  
The top row of the table is the first happened feature  
and the left column is the second happened feature.  
For example,  
The summary is listed below.  
Case 1:  
Case  
VBO_l  
100V  
141V  
169V  
VBO_h  
143V  
169V  
225V  
VBO_hys  
43V  
RBO1  
RBO2  
39KW  
18KW  
30KW  
The “Auto-restart enable” feature happened first and it  
follows with the “Extended blanking time” feature. Then  
the “Auto-restart enable” feature will continue to hold  
and the “Extended blanking time” feature is ignored.  
1
2
3
4.3MW  
2.8MW  
5.6MW  
28V  
56V  
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ICE3AR2280JZ  
Functional Description  
Case 2:  
The “Extended blanking time” feature happened first  
and it follows with the “Auto-restart enable” feature.  
Then the “Auto-restart enable” feature will take the  
priority and the “Extended blanking time” feature is  
overridden.  
Case 3:  
The “Extended blanking time” feature happened first  
and it follows with the “Brownout” feature. Then the  
“Extended blanking time” feature will continue to work  
until it ends. After that if the over load fault is removed  
the “Brownout” feature takes the action.  
Case 4:  
The “Brownout” feature happened first and it follows  
with the “Auto-restart enable” feature. Then the  
“Brownout” feature will continue to work and the “Auto-  
restart enable” feature is ignored.  
One typical case happened is that the “Extended  
blanking time” feature happened first and it follows with  
the “Brownout” feature. If, however, the over load fault  
is removed before the end of the extended blanking  
time, the “Brownout” feature can take action only after  
20ms buffer time.  
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Electrical Characteristics  
4
Electrical Characteristics  
Note: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are  
not violated.  
4.1  
Absolute Maximum Ratings  
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction  
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7  
(VCC) is discharged before assembling the application circuit. Ta=25°C unless otherwise specified.  
Parameter  
Symbol  
Limit Values  
Unit  
Remarks  
min.  
max.  
800  
Drain Source Voltage  
VDS  
ID_Puls  
EAR  
-
-
-
V
A
Pulse drain current, tp limited by Tjmax  
4.9  
Avalanche energy, repetitive tAR limited by  
max. Tj=150°C1)  
0.047  
mJ  
Avalanche current, repetitive tAR limited by  
max. Tj=150°C  
IAR  
-
1.5  
A
VCC Supply Voltage  
FBB Voltage  
VVCC  
VFBB  
VBBA  
VCS  
Tj  
-0.3  
-0.3  
-0.3  
-0.3  
-40  
-55  
-
27  
5.5  
5.5  
5.5  
150  
150  
96  
V
V
BBA Voltage  
V
CS Voltage  
V
Junction Temperature  
Storage Temperature  
°C  
°C  
K/W  
Controller & CoolMOS®  
TS  
Thermal Resistance  
Junction -Ambient  
RthJA  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
2
°C  
1.6mm (0.063in.) from  
case for 10s  
Human body model2)  
ESD Capability (incl. Drain Pin)  
VESD  
kV  
1)  
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f  
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kW series resistor)  
2)  
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Electrical Characteristics  
4.2  
Operating Range  
Note: Within the operating range the IC operates as described in the functional description.  
Parameter  
Symbol  
Limit Values  
Unit  
Remarks  
min.  
VVCCoff  
-25  
max.  
25  
VCC Supply Voltage  
VVCC  
TjCon  
V
Max value limited due to Vcc OVP  
Junction Temperature of  
Controller  
130  
°C  
Max value limited due to thermal  
shut down of controller  
Junction Temperature of  
CoolMOS®  
TjCoolMOS  
-25  
150  
°C  
4.3  
Characteristics  
4.3.1  
Supply Section  
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junction  
temperature range TJ from – 25 °C to 125 °C. Typical values represent the median values, which are  
related to 25°C. If not otherwise stated, a supply voltage of VCC = 17 V is assumed.  
Parameter  
Symbol  
Limit Values  
typ.  
Unit  
Test Condition  
min.  
max.  
Start Up Current  
IVCCstart  
-
200  
300  
mA  
VVCC =16V  
VCC Charge Current  
IVCCcharge1  
IVCCcharge2  
IVCCcharge3  
IStartLeak  
-
-
5.0  
1.60  
-
mA VVCC = 0V  
mA VVCC = 1V  
mA VVCC =16V  
0.55  
0.38  
-
0.9  
0.7  
0.2  
Leakage Current of  
50  
mA  
VDrain = 650V  
at Tj=100°C 1)  
Start Up Cell and CoolMOS®  
Supply Current with  
Inactive Gate  
IVCCsup1  
IVCCsup2  
IVCCrestart  
-
-
-
1.9  
3.4  
3.2  
4.8  
-
mA  
Supply Current with Active Gate  
mA IFBB = 0A  
Supply Current in  
Auto Restart Mode with Inactive  
Gate  
320  
mA  
IFBB = 0A  
Supply Current in Active Burst  
Mode with Inactive Gate  
IVCCburst1  
IVCCburst2  
-
-
620  
620  
950  
950  
mA  
mA  
VFBB = 2.5V  
VVCC = 11.5V, VFBB  
2.5V  
=
VCC Turn-On Threshold  
VCC Turn-Off Threshold  
VCC Turn-On/Off Hysteresis  
VVCCon  
VVCCoff  
VVCChys  
16.0  
9.8  
-
17.0  
10.5  
6.5  
18.0  
11.2  
-
V
V
V
1)  
The parameter is not subjected to production test - verified by design/characterization  
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Electrical Characteristics  
4.3.2  
Internal Voltage Reference  
Parameter Symbol  
Limit Values  
typ.  
Unit  
Test Condition  
min.  
max.  
Trimmed Reference Voltage  
VREF  
4.90  
5.00  
5.10  
V
measured at pin FBB  
IFBB = 0  
4.3.3  
PWM Section  
Parameter  
Symbol  
Limit Values  
typ.  
Unit  
Test Condition  
min.  
87  
92  
-
max.  
113  
108  
-
Fixed Oscillator Frequency  
fOSC1  
fOSC2  
fjitter  
100  
kHz  
kHz  
kHz  
ms  
100  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Frequency Jittering Range  
Frequency Jittering period  
Max. Duty Cycle  
±4.0  
Tjitter  
Dmax  
-
4.0  
-
0.70  
0.75  
0.80  
Min. Duty Cycle  
PWM-OP Gain  
Dmin  
AV  
0
-
-
VFBB < 0.3V  
3.05  
3.25  
0.60  
0.7  
3.45  
Voltage Ramp Offset  
VOffset-Ramp  
VFBmin  
-
-
-
-
V
V
VFBB Operating Range Min  
Level  
VFBB Operating Range Max  
level  
VFBmax  
-
-
4.3  
V
CS=1V, limited by  
Comparator C41)  
FBB Pull-Up Resistor  
RFB  
9.0  
15.4  
22.0  
kW  
1)  
The parameter is not subjected to production test - verified by design/characterization  
4.3.4  
Soft Start time  
Parameter  
Symbol  
Limit Values  
Unit  
Test Condition  
min.  
typ.  
max.  
Soft Start time  
tSS  
-
10  
-
ms  
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ICE3AR2280JZ  
Electrical Characteristics  
4.3.5  
Control Unit  
Parameter  
Symbol  
Limit Values  
typ.  
Unit  
Test Condition  
min.  
max.  
Brownout reference voltage for  
comparator C14  
VBO_ref  
VBKC3  
0.80  
0.90  
1.00  
V
V
V
Blanking time voltage lower limit for  
Comparator C3  
0.80  
4.28  
0.90  
4.50  
1.00  
4.72  
Blanking time voltage upper limit for  
Comparator C11  
VBKC11  
Over Load Limit for Comparator C4  
VFBC4  
4.28  
4.28  
4.50  
4.50  
4.72  
4.72  
V
V
Entry Burst select High level for  
Comparator C19  
VFBC19  
Entry Burst select Low level for  
Comparator C20  
VFBC20  
0.40  
0.50  
0.60  
V
Active Burst Mode  
Entry Level for  
Comparator C5  
10% Pin_max  
VFB_burst1  
VFB_burst2  
VFB_burst3  
VFBC6a  
1.51  
1.34  
1.20  
3.35  
1.60  
1.42  
1.27  
3.50  
1.69  
1.50  
1.34  
3.65  
V
V
V
V
< 7 counts  
6.67% Pin_max  
4.38% Pin_max  
8 ~ 39 counts  
40 ~ 191 counts  
In Active Burst Mode  
Active Burst Mode High Level for  
Comparator C6a  
Active Burst Mode Low Level for  
Comparator C6b  
VFBC6b  
VFBC13  
VVCCOVP1  
VVCCOVP2  
VAE  
3.06  
3.85  
19.5  
25.0  
0.25  
480  
3.20  
4.00  
20.5  
25.5  
0.40  
720  
3.34  
4.15  
21.5  
26.3  
0.45  
864  
V
Active Burst Mode Level for  
Comparator C13  
V
Overvoltage Detection Limit for  
Comparator C1  
V
VFBB = 5V, during soft  
start  
Overvoltage Detection Limit for  
Comparator C2  
V
Auto-restart enable reference voltage  
for Comparator C9  
V
Charging current for extended  
blanking time  
Ichg_EB  
mA  
Charging current for brownout  
Thermal Shutdown1)  
Hysteresis for thermal Shutdown1)  
Ichg_BO  
TjSD  
TjSD_hys  
tBK  
9.0  
10.0  
140  
50  
10.8  
mA  
°C  
°C  
ms  
130  
150  
Controller  
-
-
-
-
Built-in Blanking Time for Overload  
Protection or enter Active Burst Mode  
20  
Timer for entry burst select  
tEBS  
-
-
1
-
-
ms  
Spike Blanking Time for Auto-Restart  
Protection  
tSpike  
30  
ms  
1)  
The parameter is not subjected to production test - verified by design/characterization. The thermal shutdown  
temperature refers to the junction temperature of the controller.  
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP  
Version 2.1a  
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Electrical Characteristics  
and VVCCPD  
Current Limiting  
Parameter  
4.3.6  
Symbol  
Limit Values  
typ.  
Unit  
Test Condition  
min.  
max.  
Peak Current Limitation  
(incl. Propagation Delay)  
Vcsth  
0.99  
1.06  
1.13  
V
dVsense / dt = 0.6V/ms  
(Figure 20)  
Peak Current  
Limitation during  
Active Burst Mode  
20% Pin_max  
Vcsth_burst1  
0.39  
0.32  
0.25  
-
0.45  
0.37  
0.31  
220  
180  
0.51  
0.44  
0.37  
-
V
V
< 7 counts  
13.3% Pin_max Vcsth_burst2  
8 ~ 39 counts  
40 ~ 191 counts  
9.6% Pin_max  
Normal mode tLEB_normal  
Burst mode tLEB_burst  
ICSbias  
Vcsth_burst3  
V
Leading Edge  
Blanking  
ns  
ns  
-
-
CS Input Bias Current  
-1.5  
-0.2  
-
mA  
VCS =0V  
4.3.7  
CoolMOS® Section  
Parameter  
Symbol  
Limit Values  
typ.  
Unit  
Test Condition  
min.  
max.  
Drain Source Breakdown Voltage  
Drain Source On-Resistance  
V(BR)DSS  
RDSon  
800  
870  
-
-
-
-
V
V
Tj = 25°C  
Tj = 110°C1)  
-
-
-
2.26  
5.02  
6.14  
2.62  
5.81  
7.10  
W
W
W
Tj = 25°C  
Tj=125°C1)  
Tj=150°C1)  
at ID = 0.81A  
Effective output capacitance, energy  
related  
Co(er)  
-
16.3  
-
pF  
VDS = 0V to 480V  
Rise Time  
Fall Time  
1)  
trise  
tfall  
-
-
302)  
302)  
-
-
ns  
ns  
The parameter is not subjected to production test - verified by design/characterization  
Measured in a Typical Flyback Converter Application  
2)  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
CoolMOS® Performance Characteristic  
5
CoolMOS® Performance Characteristic  
Figure 33  
Safe Operating Area (SOA) curve for ICE3AR2280JZ  
Figure 34  
SOA temperature derating coefficient curve  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
CoolMOS® Performance Characteristic  
Figure 35  
Power dissipation; Ptot=f(Ta)  
Figure 36  
Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Input Power Curve  
6
Input Power Curve  
Two input power curves giving the typical input power versus ambient temperature are showed below;  
Vin=85Vac~265Vac (Figure 37) and Vin=230Vac+/-15% (Figure 38). The curves are derived based on a typical  
discontinuous mode flyback model which considers either 60% maximum duty ratio or 150V maximum secondary  
to primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink for the device.  
The input power already includes the power loss at input common mode choke, bridge rectifier and the  
CoolMOS.The device saturation current (ID_Puls @ Tj=125°C) is also considered.  
To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient  
temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 37),  
operating temperature is 50°C, estimated efficiency is 85%, then the estimated output power is 23W (28W * 85%).  
Figure 37  
Input power curve Vin=85~265Vac; Pin=f(Ta)  
Figure 38  
Input power curve Vin=230Vac+/-15%; Pin=f(Ta)  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Outline Dimension  
7
Outline Dimension  
PG-DIP-7  
(Plastic Dual In-Line Outline)  
Figure 39  
PG-DIP-7 (Pb-free lead plating Plastic Dual-in-Line Outline)  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Marking  
8
Marking  
Marking  
Figure 40  
Marking for ICE3AR2280JZ  
Version 2.1a  
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ICE3AR2280JZ  
Schematic for recommended PCB layout  
9
Schematic for recommended PCB layout  
Figure 41  
Schematic for recommended PCB layout  
General guideline for PCB layout design using F3 CoolSET (refer to Figure 41):  
1. “Star Ground “at bulk capacitor ground, C11:  
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11  
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET device  
effectively. The primary DC grounds include the followings.  
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.  
b. DC ground of the current sense resistor, R12  
c. DC ground of the CoolSET device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of  
IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.  
d. DC ground from bridge rectifier, BR1  
e. DC ground from the bridging Y-capacitor, C4  
2. High voltage traces clearance:  
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.  
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm  
b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm  
3. Filter capacitor close to the controller ground:  
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin  
as possible so as to reduce the switching noise coupled into the controller.  
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 41):  
1. Add spark gap  
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated  
charge during surge test through the sharp point of the saw-tooth plate.  
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:  
Gap separation is around 1.5mm (no safety concern)  
Version 2.1a  
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CoolSET®-F3R80  
ICE3AR2280JZ  
Schematic for recommended PCB layout  
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:  
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.  
230Vac input voltage application, the gap separation is around 5.5mm  
115Vac input voltage application, the gap separation is around 3mm  
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input  
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:  
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET and  
reduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148.  
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the  
sensitive components such as the primary controller, IC11.  
Version 2.1a  
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11 Jan 2012  
Total Quality Management  
Qualität hat für uns eine umfassende  
Bedeutung. Wir wollen allen Ihren  
Ansprüchen in der bestmöglichen  
Weise gerecht werden. Es geht uns also  
nicht nur um die Produktqualität –  
unsere Anstrengungen gelten  
gleichermaßen der Lieferqualität und  
Logistik, dem Service und Support  
sowie allen sonstigen Beratungs- und  
Betreuungsleistungen.  
Quality takes on an allencompassing  
significance at Semiconductor Group.  
For us it means living up to each and  
every one of your demands in the best  
possible way. So we are not only  
concerned with product quality. We  
direct our efforts equally at quality of  
supply and logistics, service and  
support, as well as all the other ways in  
which we advise and attend to you.  
Dazu gehört eine bestimmte  
Part of this is the very special attitude of  
our staff. Total Quality in thought and  
deed, towards co-workers, suppliers  
and you, our customer. Our guideline is  
“do everything with zero defects”, in an  
open manner that is demonstrated  
beyond your immediate workplace, and  
to constantly improve.  
Geisteshaltung unserer Mitarbeiter.  
Total Quality im Denken und Handeln  
gegenüber Kollegen, Lieferanten und  
Ihnen, unserem Kunden. Unsere  
Leitlinie ist jede Aufgabe mit „Null  
Fehlern“ zu lösen – in offener  
Sichtweise auch über den eigenen  
Arbeitsplatz hinaus – und uns ständig  
zu verbessern.  
Throughout the corporation we also  
think in terms of Time Optimized  
Processes (top), greater speed on our  
part to give you that decisive  
competitive edge.  
Unternehmensweit orientieren wir uns  
dabei auch an „top“ (Time Optimized  
Processes), um Ihnen durch größere  
Schnelligkeit den entscheidenden  
Wettbewerbsvorsprung zu verschaffen.  
Give us the chance to prove the best of  
performance through the best of quality  
– you will be convinced.  
Geben Sie uns die Chance, hohe  
Leistung durch umfassende Qualität zu  
beweisen.  
Wir werden Sie überzeugen.  
h t t p : / / w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  

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