IDB15E60_07 [INFINEON]
Fast Switching EmCon Diode; 快速开关EMCON二极管
| 型号： | IDB15E60_07 |
| 厂家： | 
Infineon |
| 描述： | Fast Switching EmCon Diode |
| 文件： | 总8页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDB15E60
Fast Switching EmCon Diode
Product Summary
Feature
V
600
15
V
A
RRM
• 600 V EmCon technology
• Fast recovery
I
F
V
T
1.5
175
V
F
• Soft switching
°C
jmax
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
PG -TO263-3-2
2
1
3
* RoHS compliant
Type
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
IDB15E60
PG-TO263-3-2
-
D15E60
NC
C
A
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
V
Repetitive peak reverse voltage
Continous forward current
V
600
RRM
I
A
F
T =25°C
29.2
19.6
C
T =90°C
C
Surge non repetitive forward current
I
I
60
FSM
FRM
T =25°C, t =10 ms, sine halfwave
C
p
Maximum repetitive forward current
45
T =25°C, t limited by T
, D=0.5
C
p
jmax
W
Power dissipation
P
tot
T =25°C
83.3
47.2
C
T =90°C
C
-55...+175
°C
°C
Operating and storage temperature
T , T
j stg
Soldering temperature
T
245
S
reflow soldering, MSL1
Page 1
Rev.2.2
2007-09-01
IDB15E60
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
1.8
62
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
R
R
thJC
thJA
thJA
-
-
-
62
-
2
1)
@ 6 cm cooling area
35
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
µA
V
min.
typ. max.
Static Characteristics
Reverse leakage current
I
R
V =600V, T =25°C
-
-
-
-
50
R
j
V =600V, T =150°C
1250
R
j
Forward voltage drop
V
F
I =15A, T =25°C
-
-
1.5
1.5
2
-
F
j
I =15A, T =150°C
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
Rev.2.2
2007-09-01
IDB15E60
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
ns
A
Reverse recovery time
t
I
rr
V =400V, I =15A, di /dt=1000A/µs, T =25°C
-
-
-
87
-
-
-
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =125°C
124
131
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =150°C
R
F
F
j
Peak reverse current
rrm
V =400V, I = 15A, di /dt=1000A/µs, T =25°C
-
-
-
13.7
16.4
19.3
-
-
-
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =125°C
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =150°C
R
F
F
j
nC
Reverse recovery charge
Q
S
rr
V =400V, I =15A, di /dt=1000A/µs, T =25°C
-
-
-
595
995
-
-
-
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =125°C
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =150°C
1104
R
F
F
j
Reverse recovery softness factor
V =400V, I =15A, di /dt=1000A/µs, T =25°C
-
-
-
3.6
4.3
4.5
-
-
-
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =125°C
R
F
F
j
V =400V, I =15A, di /dt=1000A/µs, T =150°C
R
F
F
j
Page 3
Rev.2.2
2007-09-01
IDB15E60
1 Power dissipation
= f (T )
2 Diode forward current
I = f(T )
P
tot
C
F
C
parameter: T ≤ 175 °C
parameter: T ≤ 175°C
j
j
90
30
W
A
70
60
50
40
30
20
10
0
20
15
10
5
0
25
50
75
100
125
175
25
50
75
100
125
175
°C
°C
T
T
C
C
3 Typ. diode forward current
I = f (V )
4 Typ. diode forward voltage
V = f (T )
F
F
F
j
50
2
V
30A
A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
30
20
10
0
-55°C
25°C
100°C
150°C
15A
7.5A
0.5
1
1.5
2.5
-60
-20
20
60
100
160
V
°C
T
V
F
j
Page 4
Rev.2.2
2007-09-01
IDB15E60
5 Typ. reverse recovery time
t = f (di /dt)
6 Typ. reverse recovery charge
Q =f(di /dt)
rr
F
rr
F
parameter: V = 400V, T = 125°C
parameter: V = 400V, T = 125 °C
R j
R
j
500
1450
ns
nC
30A
15A
400
350
300
250
200
150
100
50
1250
1150
1050
950
30A
15A
7.5A
850
7.5A
750
650
0
550
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
S = f(di /dt)
I = f (di /dt)
rr
F
F
parameter: V = 400V, T = 125°C
parameter: V = 400V, T = 125°C
R j
R
j
11
18
A
16
15
14
13
12
11
10
9
30A
15A
7.5A
9
8
7
6
5
4
3
30A
15A
8
7,5A
7
6
5
4
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
Page 5
Rev.2.2
2007-09-01
IDB15E60
9 Max. transient thermal impedance
= f (t )
Z
thJC
p
parameter : D = t /T
p
10 1
IDP15E60
K/W
10 0
10 -1
D = 0.50
0.20
0.10
0.05
10 -2
0.02
0.01
single pulse
10 -3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
Page 6
Rev.2.2
2007-09-01
IDB15E60
Page 7
Rev.2.2
2007-09-01
IDB15E60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
Rev.2.2
2007-09-01
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