IDC15D120T8MX1SA1 [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, DIE-1;
| 型号： | IDC15D120T8MX1SA1 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, DIE-1 软恢复二极管 快速软恢复二极管 快速软恢复中等电源 |
| 文件： | 总8页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
Emitter Controlled 4 Medium Power Technology
IDC15D120T8M
Data Sheet
Industrial Power Control
IDC15D120T8M
Table of Contents
Features and Applications...............................................................................................................................3
Mechanical Parameters....................................................................................................................................3
Maximum Ratings.............................................................................................................................................4
Static and Electrical Characteristics ..............................................................................................................4
Further Electrical Characteristics...................................................................................................................4
Chip Drawing.....................................................................................................................................................5
Revision History ...............................................................................................................................................6
Relevant Application Notes .............................................................................................................................6
Legal Disclaimer ...............................................................................................................................................7
L4074E
2
Rev. 2.0, 22.08.2016
IDC15D120T8M
Diode Chip in Emitter Controlled 4 Medium Power Technology
Features:
Recommended for:
Low / medium power modules
1200V Emitter Controlled 4 technology
110µm chip
Applications:
Low / medium power drives
Soft, fast switching
Low reverse recovery charge
Small temperature coefficient
Chip Type
VR
IFn
Die Size
4.28mm x 3.40mm
Package
IDC15D120T8M
1200V
25A
Sawn on foil
Mechanical Parameters
Die size
4.28 x 3.40
14.55
Area total
mm2
Anode pad size
Silicon thickness
Wafer size
3.306 x 2.446
110
µm
200
mm
Maximum possible chips per wafer
Passivation frontside
Pad metal
1890
Photoimide
3200nm AlSiCu
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Backside metal
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Al, 500µm
Reject ink dot size
0.65mm; max 1.2mm
for original and
sealed MBB bags
Ambient atmosphere air, temperature 17°C – 25°C
Storage environment
(<6 months)
for open MBB bags
Acc. IEC 62258-3; Section 9.4 Storage Environment.
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IDC15D120T8M
Maximum Ratings
In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the
applied voltage, the greater the expected lifetime of any semiconductor device.
Parameter
Symbol
Conditions
Value
Unit
Repetitive peak reverse voltage
Continuous forward current 1
Maximum repetitive forward current 2
Junction temperature
VRRM
IF
IFRM
Tvj
Tvj=25°C
1200
-
V
A
50
-40...+175
-40...+150
C
C
Operating junction temperature
Tvj op
Static Characteristics (tested on wafer), Tvj=25°C
Value
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Reverse leakage current
IR
VBR
VF
VR=1200V
IR=0.25mA
IF=25A
-
-
5.2
µA
Cathode-anode breakdown
voltage
1200
1.35
-
-
V
Forward voltage drop
1.70
2.05
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Application example
FP25R12U1T4
Rev. 2.0
1 Depending on thermal properties of assembly.
2 Not subject to production test - verified by design/characterization.
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IDC15D120T8M
Chip Drawing
A
A = Anode pad
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IDC15D120T8M
Bare Die Product Specifics
Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all
characteristics which are relevant for the application at package level, including RBSOA and SCSOA.
Description
AQL 0.65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Revision
Subjects (major changes since last revision)
Date
2.0
Final data sheet
22.08.2016
Relevant Application Notes
L4074E
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Rev. 2.0, 22.08.2016
IDC15D120T8M
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2016.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-
infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility
of customer’s technical departments to evaluate the suitability of the product for the intended application and
the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact
your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any
applications where a failure of the product or any consequences of the use thereof can reasonably be
expected to result in personal injury.
L4074E
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Rev. 2.0, 22.08.2016
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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