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IDH10G65C5_12 [INFINEON]

ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.; THINQ ！一个?? ¢ 5代表示，英飞凌领先的技术优势为SiC肖特基势垒二极管。

IDH10G65C5_12


元器件型号：	IDH10G65C5_12
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. THINQ ！一个?? ¢ 5代表示，英飞凌领先的技术优势为SiC肖特基势垒二极管。二极管
PDF文件：	总11页 (文件大小：1174K)
下载文档：	下载PDF数据表文档文件
型号参数：IDH10G65C5_12参数

IDH10S120

thinQ!TM SiC Schottky Diode

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36 INFINEON

IDH10S120AKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH10S60C

2ndGeneration thinQ!TM SiC Schottky Diode

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15 INFINEON

IDH10S60C

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH10S60CXK

暂无描述

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0 INFINEON

IDH10SG60C

3rd Generation thinQ!TM SiC Schottky Diode

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40 INFINEON

IDH10SG60CXKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide, TO-220, GREEN, PLASTIC PACKAGE-2

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0 INFINEON

IDH12E120

Rectifier Diode, 1 Phase, 1 Element, 28A, 1200V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH12G65C5

650V SiC thinQ!â¢ Generation 5 diodes

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55 INFINEON

IDH12G65C5XKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

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0 INFINEON

IDH12G65C5XKSA2

DIODE SCHOTTKY 650V 12A TO220-2

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0 INFINEON

IDH12G65C6XKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 650V V(RRM), Silicon, TO-220AC, TO-220, 2 PIN

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0 INFINEON

IDH12S60C

2ndGeneration thinQ!TM SiC Schottky Diode

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35 INFINEON

IDH12S60CAKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon Carbide, TO-220, GREEN, PLASTIC PACKAGE-2

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0 INFINEON

IDH12SG60C

3rd Generation thinQ!TM SiC Schottky Diode

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31 INFINEON

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