IDP30E65D2 [INFINEON]

Rapid 2 650 V 开关, 30 A 发射极控制硅功率二极管具有 TO-220 real2pin 封装，专为开关频率在40 kHz 到 100 kHz之间的应用而设计。;


型号：	IDP30E65D2
厂家：	Infineon
描述：	Rapid 2 650 V 开关, 30 A 发射极控制硅功率二极管具有 TO-220 real2pin 封装，专为开关频率在40 kHz 到 100 kHz之间的应用而设计。软恢复二极管快速软恢复二极管局域网开关光电二极管
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中文：	中文翻译
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Diode

RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode

IDP30E65D2

EmitterꢀControlledꢀDiode

Dataꢀsheet

IndustrialꢀPowerꢀControl

IDP30E65D2

EmitterꢀControlledꢀDiode

RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode

ꢀ

Features:

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications

•ꢀ650ꢀVꢀEmitterꢀControlledꢀtechnology

•ꢀFastꢀrecovery

•ꢀSoftꢀswitching

•ꢀLowꢀreverseꢀrecoveryꢀcharge

•ꢀLowꢀforwardꢀvoltageꢀandꢀstableꢀoverꢀtemperature

•ꢀ175ꢀ°Cꢀjunctionꢀoperatingꢀtemperature

•ꢀEasyꢀparalleling

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

Applications:

•ꢀBoostꢀdiodeꢀinꢀCCMꢀPFC

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_rrm

I_f

V_f,ꢀT_vj=25°C

T_vjmax

Marking

Package

IDP30E65D2

650V

30A

1.6V

175°C

E30ED2

PG-TO220-2-1

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

MaximumꢀRatings

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.

Parameter

Symbol

Value

Unit

Repetitiveꢀpeakꢀreverseꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_RRM

650

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_Cꢀ=ꢀ25°C

T_Cꢀ=ꢀ100°C

I_F

60.0

30.0

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

I_FSM

90.0

Diode surge non repetitive forward current

T_Cꢀ=ꢀ25°C,ꢀt_pꢀ=ꢀ8.3ms,ꢀsineꢀhalfwave

180.0

143.0

PowerꢀdissipationꢀT_Cꢀ=ꢀ25°C

Operating junction temperature

Storage temperature

P_tot

T_vj

°C

-40...+175

-55...+150

T_stg

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

°C

260

0.6

Mounting torque, M3 screw

Maximum of mounting processes: 3

ThermalꢀResistance

Parameter

Symbol Conditions

Max.ꢀValue

Unit

Characteristic

Diode thermal resistance,¹⁾

junction - case

R_th(j-c)

R_th(j-a)

1.05

K/W

Thermal resistance

junction - ambient

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

I_Fꢀ=ꢀ30.0A

Diode forward voltage

V_F

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

1.60 2.20

1.65

V_Rꢀ=ꢀ650V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Reverse leakage current

I_R

4.0

800.0

40.0 µA

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Internal emitter inductance

measured 5mm (0.197 in.) from

case

L_E

7.0

¹⁾Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Unit

min. typ. max.

Parameter

Symbol Conditions

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

µC

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ30.0A,

di_F/dtꢀ=ꢀ1000A/µs,

Lσꢀ=ꢀ30nH,

Q_rr

0.34

14.7

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-2100

A/µs

Cσꢀ=ꢀ40pF,

switch IKW50N65H5

Diode reverse recovery time

Diode reverse recovery charge

t_rr

0.25

5.7

µC

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ30.0A,

di_F/dtꢀ=ꢀ300A/µs,

Lσꢀ=ꢀ30nH,

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-700

A/µs

Cσꢀ=ꢀ40pF,

switch IKW50N65H5

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ175°C/125°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

µC

T_vjꢀ=ꢀ175°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ30.0A,

di_F/dtꢀ=ꢀ1000A/µs,

Lσꢀ=ꢀ30nH,

Q_rr

0.61

18.0

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-2200

A/µs

Cσꢀ=ꢀ40pF,

switch IKW50N65H5

Diode reverse recovery time

Diode reverse recovery charge

t_rr

0.38

7.1

µC

T_vjꢀ=ꢀ125°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ30.0A,

di_F/dtꢀ=ꢀ300A/µs,

Lσꢀ=ꢀ30nH,

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-900

A/µs

Cσꢀ=ꢀ40pF,

switch IKW50N65H5

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

150

135

120

105

D=0.5

0.2

0.1

0.05

0.02

0.1

0.01

single pulse

r_i[K/W]: 0.018165 0.260192 0.287872 0.461564 0.023701

1.6E-3

τ_i[s]:

2.6E-5

1.8E-4

1.4E-3

6.0E-3

0.09699326 2.079861

0.01

1E-6

100

125

150

175

1E-5

1E-4

0.001

0.01

0.1

T_C,ꢀCASEꢀTEMPERATUREꢀ[°C]

t_p,ꢀPULSEꢀWIDTHꢀ[s]

Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase

Figure 2. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa

functionꢀofꢀpulseꢀwidth

temperature

(T_vj≤175°C)

(D=t_p/T)

0.8

T_j=25°C, I_F= 30A

T_j=175°C, I_F= 30A

T_j=25°C, I_F= 30A

T_j=175°C, I_F= 30A

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

500

1000

1500

2000

2500

3000

500

1000

1500

2000

2500

3000

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 3. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunctionꢀof Figure 4. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀaꢀfunction

diodeꢀcurrentꢀslope

ofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

-500

T_j=25°C, I_F= 30A

T_j=175°C, I_F= 30A

T_j=25°C, I_F= 30A

T_j=175°C, I_F= 30A

-1000

-1500

-2000

-2500

-3000

-3500

500

1000

1500

2000

2500

3000

500

1000

1500

2000

2500

3000

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 5. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Figure 6. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode

currentꢀslope

(V_R=400V)

2.50

T_j=25°C

T_j=175°C

I_F=15A

I_F=30A

I_F=60A

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.0

0.5

1.0

1.5

2.0

2.5

100

125

150

175

V_F,ꢀFORWARDꢀVOLTAGEꢀ[V]

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 7. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunctionꢀof Figure 8. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunctionꢀof

forwardꢀvoltage junctionꢀtemperature

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

PG-TO220-2-1

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

EmitterꢀControlledꢀDiode

v_GE(t)

90% V_GE

10% V_GE

i_C(t)

90% I_C

10% I_C

90% I_C

10% I_C

v_CE(t)

t_d(off)

t_f

t_d(on)

t_r

v_GE(t)

90% V_GE

10% V_GE

i_C(t)

2% I_C

v_CE(t)

t₂

t₄

V_CEx I_Cx dt

off

∫

2% V_CE

t₁

t₃

t₁

t₂

t₃

t₄

Rev.ꢀ2.1,ꢀꢀ2014-09-18

IDP30E65D2

Emitter Controlled Diode

Revision History

IDP30E65D2

Revision: 2014-09-18, Rev. 2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.1 2014-09-18 Final data sheet

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Published by

Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon

Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems

and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon

Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,

automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be

endangered.

Rev. 2.1, 2014-09-18

IDP30E65D2 [INFINEON]

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