IDV08E65D2 [INFINEON]
Rapid 2 650 V 开关, 8 A 发射控制硅功率二极管具有 TO-220 FullPAK 封装，专为开关频率在40 kHz 到 100 kHz之间的应用而设计。;
| 型号： | IDV08E65D2 |
| 厂家： | 
Infineon |
| 描述： | Rapid 2 650 V 开关, 8 A 发射控制硅功率二极管具有 TO-220 FullPAK 封装，专为开关频率在40 kHz 到 100 kHz之间的应用而设计。 开关 二极管 |
| 文件： | 总10页 (文件大小：1735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
IDV08E65D2
FullPAKꢀwithꢀEmitterꢀControlledꢀDiode
Dataꢀsheet
IndustrialꢀPowerꢀControl
IDV08E65D2
EmitterꢀControlledꢀDiode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
ꢀ
Features:
A
•ꢀElectricallyꢀisolatedꢀFullPAKꢀforꢀefficientꢀassembly
•ꢀ650ꢀVꢀEmitterꢀControlledꢀtechnology
•ꢀFastꢀrecovery
•ꢀSoftꢀswitching
•ꢀLowꢀreverseꢀrecoveryꢀcharge
•ꢀLowꢀforwardꢀvoltage
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogenꢀfreeꢀ(accordingꢀtoꢀIECꢀ61249-2-21)
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/diode/
Applications:
•ꢀBoostꢀdiodeꢀinꢀCCMꢀPFC
C
A
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
Vrrm
If
Vf,ꢀTvj=25°C
Tvjmax
Marking
Package
IDV08E65D2
650V
8A
1.6V
175°C
E08ED2
PG-TO220-2-22 FP
2
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
650
V
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
8.0
4.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
IFSM
24.0
A
A
Diode surge non repetitive forward current
TCꢀ=ꢀ25°C,ꢀtpꢀ=ꢀ8.3ms,ꢀsineꢀhalfwave
60.0
27.3
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
Diode thermal resistance,1)
junction - case
Rth(j-c)
Rth(j-a)
5.50
65
K/W
K/W
Thermal resistance
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
IFꢀ=ꢀ8.0A
Diode forward voltage
VF
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-
-
1.60 2.20
V
1.65
-
VRꢀ=ꢀ650V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Reverse leakage current
IR
-
-
-
-
40.0 µA
2000.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
7.0
-
nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
23
0.11
7.4
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ35nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-3300
-
A/µs
Cσꢀ=ꢀ32pF,
switch IPW60R045CP
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
40
0.08
2.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
diF/dtꢀ=ꢀ200A/µs,
Lσꢀ=ꢀ35nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1300
-
A/µs
Cσꢀ=ꢀ32pF,
switch IPW60R045CP
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
30
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ35nH,
Qrr
0.20
10.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2200
-
A/µs
Cσꢀ=ꢀ32pF,
switch IPW60R045CP
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
58
0.13
3.8
-
-
-
ns
µC
A
Tvjꢀ=ꢀ125°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
diF/dtꢀ=ꢀ200A/µs,
Lσꢀ=ꢀ35nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2200
-
A/µs
Cσꢀ=ꢀ32pF,
switch IPW60R045CP
5
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
30
25
20
15
10
5
D=0.5
0.2
1
0.1
0.05
0.02
0.01
single pulse
0.1
i:
ri[K/W]: 5.5E-3 0.13988 1.1791 1.02414 0.52949
τi[s]: 3.3E-6 3.1E-5 3.1E-4 2.4E-3
1
2
3
4
5
6
7
8
0.89284
1.5821
0.13013
0.02313464 0.3541141 2.438381 28.31257
0
0.01
1E-6 1E-5 1E-4 0.001 0.01
25
50
75
100
125
150
175
0.1
1
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
temperature
(Tvj≤175°C)
(D=tp/T)
80
0.30
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
70
60
50
40
30
20
10
0
0.25
0.20
0.15
0.10
0.05
0.00
0
500 1000 1500 2000 2500 3000 3500 4000
0
500 1000 1500 2000 2500 3000 3500 4000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 3. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunctionꢀof Figure 4. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀaꢀfunction
diodeꢀcurrentꢀslope
ofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
6
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
30
25
20
15
10
5
0
-1000
-2000
-3000
-4000
-5000
-6000
-7000
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
0
0
500 1000 1500 2000 2500 3000 3500 4000
0
500 1000 1500 2000 2500 3000 3500 4000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 5. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 6. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
18
2.50
Tj=25°C
Tj=175°C
IF=4A
IF=8A
16
IF=16A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunctionꢀof Figure 8. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunctionꢀof
forwardꢀvoltage junctionꢀtemperature
7
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
8
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
EmitterꢀControlledꢀDiode
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
t4
E
=
VCE x IC x dt
E
=
on
VCE x IC x dt
off
∫
∫
2% VCE
t1
t3
t
t1
t2
t3
t4
9
Rev.ꢀ2.2,ꢀꢀ2014-08-28
IDV08E65D2
Emitter Controlled Diode
Revision History
IDV08E65D2
Revision: 2014-08-28, Rev. 2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2013-03-13 Preliminary data sheet
2013-12-16 Final DS / New Marking Pattern
2014-08-28 Value VFmax limit according BE test
1.1
2.1
2.2
We Listen to Your Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
10
Rev. 2.2, 2014-08-28
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