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IDW16G65C5_12 [INFINEON]

ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.; THINQ ！一个?? ¢ 5代表示，英飞凌领先的技术优势为SiC肖特基势垒二极管。

IDW16G65C5_12


元器件型号：	IDW16G65C5_12
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. THINQ ！一个?? ¢ 5代表示，英飞凌领先的技术优势为SiC肖特基势垒二极管。二极管
PDF文件：	总11页 (文件大小：1175K)
下载文档：	下载PDF数据表文档文件
型号参数：IDW16G65C5_12参数

IDW20C65D2XKSA1

Rectifier Diode, 1 Phase, 2 Element, 10A, 650V V(RRM), Silicon, TO-247,

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0 INFINEON

IDW20G120C5B

Rectifier Diode, Schottky, 1 Phase, 2 Element, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC PACKAGE-3

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1 INFINEON

IDW20G120C5BFKSA1

Rectifier Diode, Schottky, 1 Phase, 2 Element, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC PACKAGE-3

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0 INFINEON

IDW20G65C5

650V SiC thinQ!â¢ Generation 5 diodes

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71 INFINEON

IDW20G65C5_12

ThinQ!â¢ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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30 INFINEON

IDW20G65C5B

Rectifier Diode, Schottky, 1 Phase, 2 Element, 650V V(RRM), Silicon Carbide, TO-247,

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0 INFINEON

IDW20G65C5BXKSA1

Rectifier Diode, Schottky, 1 Phase, 2 Element, 650V V(RRM), Silicon Carbide, TO-247,

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0 INFINEON

IDW20G65C5FKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 650V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC PACKAGE-3

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0 INFINEON

IDW20G65C5XKSA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 650V V(RRM), Silicon Carbide, TO-247,

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0 INFINEON

IDW20S120FKSA1

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-247, GREEN, PLASTIC PACKAGE-3

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0 INFINEON

IDW24G65C5B

650V SiC Schottky Diode

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0 INFINEON

IDW24G65C5B_15

650V SiC Schottky Diode

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0 INFINEON

IDW30E65D1

Material Content Data Sheet

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0 INFINEON

IDW30E65D1

Rapid Switching Emitter Controlled Diode

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0 INFINEON

IDW30E65D1_13

Rapid Switching Emitter Controlled Diode

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0 INFINEON

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