IGC11T120T8LX1SA1 [INFINEON]

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2;
IGC11T120T8LX1SA1
型号: IGC11T120T8LX1SA1
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

栅 功率控制 晶体管
文件: 总9页 (文件大小:305K)
下载:  下载PDF数据表文档文件

IGC12001

Universal Asynchronous Receiver Transmitter(UART)

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16 INTERSIL

IGC13T120T6L

IGBT4 Low Power Chip

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10 INFINEON

IGC13T120T8LX1SA1

Insulated Gate Bipolar Transistor

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0 INFINEON

IGC142T120T6RH

IGBT4 High Power Chip

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7 INFINEON

IGC142T120T6RL

IGBT4 Low Power Chip

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5 INFINEON

IGC142T120T6RM

IGBT4 Medium Power Chip

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10 INFINEON

IGC142T120T8RHX1SA2

Insulated Gate Bipolar Transistor,

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0 INFINEON

IGC142T120T8RL

Insulated Gate Bipolar Transistor

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0 INFINEON

IGC142T120T8RLX1SA2

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-7

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0 INFINEON

IGC142T120T8RM

Insulated Gate Bipolar Transistor

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0 INFINEON

IGC142T120T8RMX1SA2

Insulated Gate Bipolar Transistor,

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0 INFINEON

IGC168T170S8RM

Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, 13.38 X 12.58 MM, DIE-10

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0 INFINEON

IGC189T120T6RL

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 13.62 X 13.87 MM, DIE-3

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0 INFINEON

IGC18T120T6L

IGBT4 Low Power Chip

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6 INFINEON

IGC20

ASIC

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106 ETC