IGC189T120T6RLX1SA1 [INFINEON]
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 13.62 X 13.87 MM, DIE-3;
| 型号： | IGC189T120T6RLX1SA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 13.62 X 13.87 MM, DIE-3 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGC189T120T6RL
IGBT4 Low Power Chip
Features:
·
·
·
·
1200V Trench + Field Stop technology
low switching losses
positive temperature coefficient
easy paralleling
This chip is used for:
low / medium power modules
C
E
·
Applications:
low / medium power drives
G
·
Chip Type
VCE
ICn
Die Size
Package
IGC189T120T6RL 1200V 200A 13.62 x 13.87 mm2
sawn on foil
MECHANICAL PARAMETER
Raster size
13.62 x 13.87
12.1 x 12.35
1.31 x 0.81
188.9 / 150.6
115
Emitter pad size (incl. gate pad)
Gate pad size
mm2
Area total / active
Thickness
µm
mm
grd
Wafer size
150
Flat position
90
Max.possible chips per wafer
Passivation frontside
Pad metal
69
Photoimide
3200 nm AlSiCu
Ni Ag –system
Backside metal
Die bond
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Wire bond
Al, <500µm
Reject ink dot size
Æ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended storage environment
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7703C, Edition 0.9, 22.11.2007
IGC189T120T6RL
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Collector-Emitter voltage , T =25 °C
VC E
1200
V
A
A
j
1)
DC collector current, limited by T
IC
jmax
Pulsed collector current, t limited by T
Icpuls
600
p
jmax
Gate-Emitter voltage
VGE
Tj
±20
V
Operating junction temperature
-40 ... +17 5
°C
Short circuit data2 ) V GE = 15V, VCC = 800V, Tvj = 150°C
Reverse bias safe operating area 2 ) (RBSOA)
10
µs
tp
IC max = 400A, VCE max = 1200V, Tvj max= 150°C
1)
depending on thermal properties of assembly
2)
not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer ), T =25 °C
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V , IC= 5.7 mA 1200
VGE=15V, IC=200A
IC=7.4mA , VGE=VCE
VCE=1200V , VGE=0V
VCE=0V , VGE=20V
1.55
5.0
1.8
5.8
2.05
6.5
V
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
VGE(th)
ICES
13
µA
nA
W
IGES
600
RGint
3.5
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Value
Parameter
Symbol
Unit
Conditions
min.
typ.
max.
Input capacitance
Output capacitance
Ciss
VCE=25V,
VGE =0V,
f=1MHz
12500
770
pF
Coss
Reverse transfer capacitance
Crss
680
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7703C, Edition 0.9, 22.11.2007
IGC189T120T6RL
SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design
/characterization)
Value
Conditions 1)
Parameter
Symbol
Unit
min.
typ.
tbd
max.
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
Tj =125°C
VC C=600V,
IC=20 0A,
tbd
tbd
tbd
ns
Turn-off delay time
Fall time
VGE =-15/15V,
R G= ---W
1) values also influenced by parasitic L- and C- in measurement and pac kage.
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7703C, Edition 0.9, 22.11.2007
IGC189T120T6RL
CHIP DRAWING
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7703C, Edition 0.9, 22.11.2007
IGC189T120T6RL
FURTHER ELECTRICAL CHARACTERISTICS
This chip data sheet refers to the
device data sheet
tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life -support devices or systems with the express
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Edited by INFINEON Technologies , AIM PMD D CID CLS , L7703C, Edition 0.9, 22.11.2007
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