IGCM10F60GAXKMA1 [INFINEON]
AC Motor Controller, 20A, PDMA24, DIP-24;型号: | IGCM10F60GAXKMA1 |
厂家: | Infineon |
描述: | AC Motor Controller, 20A, PDMA24, DIP-24 电动机控制 光电二极管 |
文件: | 总17页 (文件大小:1200K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Control Integrated POwer System
(CIPOS™)
IGCM10F60GA
Datasheet
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
V 2.9
www.infineon.com
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM10F60GA
Table of contents
Table of contents...................................................................................................................................................2
CIPOS™ Control Integrated POwer System............................................................................................................3
Features
..................................................................................................................................................................3
Target Applications......................................................................................................................................................3
Description ..................................................................................................................................................................3
System Configuration..................................................................................................................................................3
Pin Configuration...................................................................................................................................................4
Internal Electrical Schematic.................................................................................................................................4
Pin Assignment ......................................................................................................................................................5
Pin Description ......................................................................................................................................................5
HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12).........................................................5
VFO (Fault-output and NTC, Pin 14) ............................................................................................................................6
ITRIP (Over current detection function, Pin 15)..........................................................................................................6
VDD, VSS (Low side control supply and reference, Pin 13, 16)...................................................................................6
VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6)..........................................................................................6
NW, NV, NU (Low side emitter, Pin 17 - 19) .................................................................................................................6
W, V, U (High side emitter and low side collector, Pin 20 - 22) ...................................................................................6
P (Positive bus input voltage, Pin 23)..........................................................................................................................6
Absolute Maximum Ratings ...................................................................................................................................7
Module Section ............................................................................................................................................................7
Inverter Section............................................................................................................................................................7
Control Section ............................................................................................................................................................7
Recommended Operation Conditions ...................................................................................................................8
Static Parameters ..................................................................................................................................................9
Dynamic Parameters ...........................................................................................................................................10
Bootstrap Parameters .........................................................................................................................................10
Thermistor...........................................................................................................................................................11
Mechanical Characteristics and Ratings ..............................................................................................................11
Circuit of a Typical Application ............................................................................................................................12
Switching Times Definition ..................................................................................................................................13
Electrical characteristic .......................................................................................................................................14
Package Outline...................................................................................................................................................15
Revision history ...................................................................................................................................................16
Datasheet
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Control Integrated POwer System (CIPOS™)
IGCM10F60GA
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ -bridge 600V / 10A
Description
Features
Fully isolated Dual In-Line molded module
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
Reverse conducting IGBTs with monolithic body
diode
Rugged SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
It is designed to control three phase AC motors and
permanent magnet motors in variable speed drives
for applications like an air conditioning,
a
refrigerator and a washing machine. The package
concept is specially adapted to power applications,
which need good thermal conduction and electrical
isolation, but also EMI-save control and overload
protection.
Integrated bootstrap functionality
Over current shutdown
Temperature monitor
Under-voltage lockout at all channels
Low side emitter pins accessible for all phase
current monitoring (open emitter)
Cross-conduction prevention
All of 6 switches turn off during protection
Lead-free terminal plating; RoHS compliant
The reverse conducting IGBTs are combined with an
optimized SOI gate driver for excellent electrical
performance.
System Configuration
Target Applications
3 half bridges with reverse conducting IGBTs
Dish washers
3Φ SOI gate driver
Refrigerators
Thermistor
Washing machines
Air-conditioners
Fans
Pin-to-heatsink clearance distance typ. 1.6mm
Low power motor drives
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Control Integrated POwer System (CIPOS™)
IGCM10F60GA
Pin Configuration
Bottom View
(24) NC
(1) VS(U)
(2) VB(U)
(23) P
(22) U
(21) V
(20) W
(19) NU
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
(18) NV
(17) NW
(15) ITRIP
(16) VSS
Figure 1
Pin configuration
Internal Electrical Schematic
NC (24)
P (23)
U (22)
(1) VS(U)
(2) VB(U)
VB1
VB2
HO1
VS1
RBS1
(3) VS(V)
(4) VB(V)
HO2
VS2
RBS2
V (21)
(5) VS(W)
(6) VB(W)
HO3
VS3
VB3
W (20)
RBS3
LO1
LO2
LO3
(7) HIN(U)
(8) HIN(V)
HIN1
HIN2
NU (19)
NV (18)
NW (17)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
(11) LIN(V)
(12) LIN(W)
(13) VDD
LIN2
LIN3
VDD
VFO
(14) VFO
(15) ITRIP
ITRIP
VSS
(16) VSS
Thermistor
Figure 2
Internal schematic
Datasheet
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Control Integrated POwer System (CIPOS™)
IGCM10F60GA
Pin Assignment
Pin Number
Pin Name
VS(U)
Pin Description
1
2
U-phase high side floating IC supply offset voltage
U-phase high side floating IC supply voltage
V-phase high side floating IC supply offset voltage
V-phase high side floating IC supply voltage
W-phase high side floating IC supply offset voltage
W-phase high side floating IC supply voltage
U-phase high side gate driver input
V-phase high side gate driver input
W-phase high side gate driver input
U-phase low side gate driver input
V-phase low side gate driver input
W-phase low side gate driver input
Low side control supply
VB(U)
VS(V)
VB(V)
VS(W)
VB(W)
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
VDD
VFO
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Fault output / Temperature monitor
Over current shutdown input
ITRIP
VSS
Low side control negative supply
W-phase low side emitter
NW
NV
V-phase low side emitter
NU
U-phase low side emitter
W
Motor W-phase output
V
Motor V-phase output
U
Motor U-phase output
P
Positive bus input voltage
NC
No Connection
Pin Description
HIN(U, V, W) and LIN(U, V, W) (Low side and high
side control pins, Pin 7 - 12)
CIPOSTM
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5k is internally provided to pre-bias
inputs during supply start-up and a zener clamp is
provided for pin protection purposes. Input
Schmitt-trigger and noise filter provide beneficial
noise rejection to short input pulses.
Schmitt-Trigger
HINx
LINx
INPUT NOISE
FILTER
UZ=10.5V
5k
SWITCH LEVEL
VIH; VIL
VSS
Figure 3
a)
Input pin structure
b)
tFILIN
tFILIN
HIN
LIN
HIN
LIN
high
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according
to Figure 4.
HO
LO
HO
LO
low
Figure 4
Input filter timing diagram
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IGCM10F60GA
It is not recommended for proper work to provide
input pulse-width lower than 1µs.
VDD, VSS (Low side control supply and reference,
Pin 13, 16)
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and
LO3). When two inputs of a same leg are activated,
only former activated one is activated so that the
leg is kept steadily in a safe state.
VDD is the control supply and it provides power
both to input logic and to output power stage.
Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below
VDDUV- = 10.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive power
dissipation.
A minimum deadtime insertion of typically 380ns is
also provided by driver IC, in order to reduce cross-
conduction of the external power switches.
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP. A pull-up resistor is
externally required.
VB(U, V, W) and VS(U, V, W) (High side supplies, Pin
1 - 6)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter voltage.
CIPOSTM
VDD
VFO
RON,FLT
From ITRIP - Latch
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
1
VSS
From UV detection
Thermistor
Figure 5
Internal circuit at pin VFO
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
The same pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures that the resulting
voltage can be directly connected to the
microcontroller.
VS(U, V, W) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
ITRIP (Over current detection function, Pin 15)
NW, NV, NU (Low side emitter, Pin 17 - 19)
CIPOS™ provides an over current detection
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
function by connecting the ITRIP input with the
IGBT collector current feedback. The ITRIP
comparator threshold (typ. 0.47V) is referenced to
VSS ground. An input noise filter (typ.: tITRIPMIN
530ns) prevents the driver to detect false over-
current events.
=
W, V, U (High side emitter and low side collector,
Pin 20 - 22)
Over current detection generates a shutdown of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
These pins are motor U, V, W input pins.
P (Positive bus input voltage, Pin 23)
The fault-clear time is set to minimum 40µs.
The high side IGBTs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450V.
Datasheet
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IGCM10F60GA
Absolute Maximum Ratings
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Module Section
Value
Description
Condition
Symbol
Unit
min
-40
max
125
Storage temperature range
Isolation test voltage
Tstg
VISOL
TC
°C
V
RMS, f = 60Hz, t = 1min
Refer to Figure 6
2000
-40
-
Operating case temperature range
125
°C
Inverter Section
Description
Value
Condition
Symbol
Unit
min
600
max
-
Max. blocking voltage
IC = 250µA
VCES
VPN
V
V
V
DC link supply voltage of P-N
DC link supply voltage (surge) of P-N
Applied between P-N
Applied between P-N
-
-
450
500
VPN(surge)
TC = 25°C , TJ < 150°C
TC = 100°C , TJ < 150°C
-10
-6
10
6
Output current
IC
A
Maximum peak output current
Short circuit withstand time1
Power dissipation per IGBT
less than 1ms
IC(peak)
tSC
-20
-
20
5
A
VDC ≤ 400V, TJ = 150°C
µs
W
°C
Ptot
TJ
-
26.1
150
Operating junction temperature range
-40
Single IGBT thermal resistance,
junction-case
RthJC
-
4.79
K/W
Control Section
Value
Description
Condition
Symbol
VDD
Unit
V
min
-1
max
20
Module supply voltage
High side floating supply voltage
(VB vs. VS)
VBS
-1
20
V
VIN
VITRIP
-1
-1
10
10
Input voltage
LIN, HIN, ITRIP
V
Switching frequency
fPWM
-
20
kHz
1 Allowed number of short circuits: <1000; time between short circuits: >1s.
Datasheet
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IGCM10F60GA
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
Symbol
Unit
min
0
typ
-
max
400
DC link supply voltage of P-N
VPN
VBS
VDD
V
V
V
High side floating supply voltage (VB vs. VS)
Low side supply voltage
13.5
14.0
-
18.5
18.5
16
ΔVBS,
ΔVDD
-1
-1
-
-
1
1
Control supply variation
V/µs
VIN
VITRIP
0
0
-
-
5
5
Logic input voltages LIN, HIN, ITRIP
Between VSS - N (including surge)
V
V
VSS
-5
-
5
Figure 6
TC measurement point1
1Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
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Control Integrated POwer System (CIPOS™)
IGCM10F60GA
Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
typ
Description
Condition
Symbol
VCE(sat)
Unit
V
min
max
IC = 6A
Collector-Emitter saturation voltage
-
-
1.6
1.8
2.0
-
TJ = 25°C
150°C
IF = 6A
Emitter-Collector forward voltage
VF
-
-
1.75
1.8
2.2
-
V
TJ = 25°C
150°C
Collector-Emitter leakage current
Logic "1" input voltage (LIN, HIN)
Logic "0" input voltage (LIN, HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VCE = 600V
ICES
VIH
-
-
1
2.5
-
mA
V
-
2.1
0.9
470
70
VIL
0.7
400
40
V
VIT,TH+
VIT,HYS
540
-
mV
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
9.5
12.1
10.4
13.0
11.2
V
V
VDD and VBS supply under voltage
negative going threshold
VDDUV-
VBSUV-
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
1.0
9.0
-
1.7
10.1
300
-
V
V
Input clamp voltage (HIN, LIN, ITRIP) Iin=4mA
VINCLAMP
IQBS
12.5
500
Quiescent VBx supply current
HIN = 0V
µA
(VBx only)
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX = 5V
IQDD
-
370
900
µA
Input bias current
Input bias current
ITRIP input bias current
VFO input bias current
VFO output voltage
VIN = 5V
IIN+
IIN-
IITRIP+
IFO
-
-
-
-
-
1
2
1.5
mA
µA
µA
µA
V
VIN = 0V
-
VITRIP = 5V
65
60
0.5
150
VFO = 5V, VITRIP = 0V
IFO = 10mA, VITRIP = 1V
-
-
VFO
Datasheet
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IGCM10F60GA
Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
typ
Description
Condition
Symbol
Unit
min
max
Turn-on propagation delay time
Turn-on rise time
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
Turn-off switching time
Short circuit propagation delay time
Input filter time ITRIP
ton
tr
tc(on)
trr
toff
tf
tc(off)
tSCP
tITRIPmin
-
-
-
-
-
-
-
-
-
670
20
80
110
820
170
180
1250
530
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
VLIN, HIN = 5V,
IC = 6A,
VDC = 300V
VLIN, HIN = 0V,
IC = 6A,
VDC = 300V
From VIT,TH+ to 10% ISC
VITRIP = 1V
Input filter time at LIN, HIN for turn
on and off
Fault clear time after ITRIP-fault
Deadtime between low side and high
side
Deadtime of gate drive circuit
VLIN, HIN = 0V & 5V
VITRIP = 1V
tFILIN
tFLTCLR
DTPWM
DTIC
-
40
1.0
-
290
65
-
-
ns
µs
µs
ns
200
-
-
380
VDC = 300V, IC = 6A
TJ = 25°C
150°C
VDC = 300V, IC = 6A
TJ = 25°C
150°C
VDC = 300V, IC = 6A
TJ = 25°C
IGBT turn-on energy (includes reverse
recovery of diode)
Eon
Eoff
Erec
-
-
110
155
-
-
µJ
µJ
µJ
IGBT turn-off energy
-
-
155
220
-
-
Diode recovery energy
-
-
45
75
-
-
150°C
Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Value
typ
-
Description
Condition
Symbol
VRRM
Unit
V
min
600
max
-
Repetitive peak reverse voltage
VS2 or VS3 = 300V, TJ = 25°C
VS2 and VS3 = 0V, TJ = 25°C
VS2 or VS3 = 300V, TJ = 125°C
VS2 and VS3 = 0V, TJ = 125°C
IF = 0.6A, di/dt = 80A/µs
35
40
50
65
Bootstrap diode resistance of
U-phase1
RBS1
-
-
Ω
Reverse recovery time
Forward voltage drop
trr_BS
VF_BS
-
-
50
2.6
-
-
ns
V
IF = 20mA, VS2 and VS3 = 0V
1 RBS2 and RBS3 have same values to RBS1
Datasheet
.
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IGCM10F60GA
Thermistor
Value
typ
Description
Condition
TNTC = 25°C
Symbol
RNTC
Unit
k
K
min
-
max
-
Resistor
85
B-constant of NTC
(Negative Temperature Coefficient)
B(25/100)
-
4092
-
3500
35
Min.
Typ.
3000
30
Max.
25
2500
20
15
2000
10
1500
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
1000
500
0
Thermistor temperature [℃]
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7
Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN2016-10 CIPOS Mini Technical description’)
Mechanical Characteristics and Ratings
Value
typ
0.69
-
Description
Condition
Unit
min
0.59
-50
-
max
Mounting torque
M3 screw and washer
Refer to Figure 8
0.78
100
-
Nm
µm
g
Flatness
Weight
6.15
+
-
-
+
Figure 8
Flatness measurement position
Datasheet
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IGCM10F60GA
Circuit of a Typical Application
NC (24)
P (23)
(1) VS(U)
(2) VB(U)
HO1
VS1
VB1
RBS1
U (22)
(3) VS(V)
(4) VB(V)
#4
HO2
VS2
VB2
V (21)
RBS2
3-ph AC
Motor
(5) VS(W)
(6) VB(W)
HO3
VS3
VB3
W (20)
RBS3
#5
#1
(7) HIN(U)
(8) HIN(V)
HIN1
LO1
LO2
LO3
HIN2
NU (19)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
(11) LIN(V)
(12) LIN(W)
LIN2
LIN3
Micro
Controller
#7
#6
NV (18)
(13) VDD
(14) VFO
Power
GND line
VDD
VFO
VDD line
(15) ITRIP
(16) VSS
ITRIP
VSS
5 or 3.3V line
NW (17)
Thermistor
#3
U-phase current sensing
V-phase current sensing
Temperature monitor
#2
W-phase current sensing
<Signal for protection>
<Signal for protection>
Figure 9
Typical application circuit
1. Input circuit
-
-
To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF)
CIN should be placed as close to VSS pin as possible.
2. Itrip circuit
-
To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.
3. VFO circuit
-
VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic
power supply with a proper resistor RPU
It is recommended that RC filter be placed as close to the controller as possible.
.
-
4. VB-VS circuit
-
Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible.
5. Snubber capacitor
-
The wiring between CIPOS™ Mini and snubber capacitor including shunt resistor should be as short as possible.
6. Shunt resistor
-
The shunt resistor of SMD type should be used for reducing its stray inductance.
7. Ground pattern
-
Ground pattern should be separated at only one point of shunt resistor as short as possible.
Datasheet
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IGCM10F60GA
Switching Times Definition
HINx
2.1V
LINx
0.9V
trr
toff
ton
10%
10%
iCx
90%
90%
tf
tr
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 10 Switching times definition
Datasheet
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IGCM10F60GA
Electrical characteristic
20
18
16
14
12
10
8
20
18
16
14
12
10
8
20
18
16
14
12
10
8
VDD=15V
TJ=25℃
VDD=13V
VDD=15V
VDD=20V
6
6
6
TJ=25℃
TJ=25℃
TJ=150℃
TJ=150℃
4
4
4
2
2
2
0
0.0
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE(sat), Collector - Emitter voltage [V]
VCE(sat), Collector - Emitter voltage [V]
V , Emitter - Collector voltage [V]
F
Typ. Collector – Emitter saturation voltage
Typ. Collector – Emitter saturation voltage
Typ. Emitter – Collector forward voltage
1.8
0.6
300
VDC=300V
VDD=15V
VDC=300V
VDD=15V
High side @TJ=25℃
270
240
210
180
150
120
90
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
High side @TJ=150℃
0.5
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
0.4
0.3
0.2
0.1
60
VDC=300V
VDD=15V
30
0.0
0
0
2
4
6
8
10
Ic, Collector current [A]
12
14
16
18
20
20
20
0
2
4
6
8
10
12
14
Ic, Collector current [A]
16
18
18
18
20
20
20
0
2
4
6
8
10
12
14
Ic, Collector current [A]
16
18
20
Typ. Turn on switching energy loss
Typ. Turn off switching energy loss
Typ. Reverse recovery energy loss
1000
400
1700
1600
1500
1400
1300
1200
1100
1000
900
VDC=300V
VDD=15V
VDC=300V
VDD=15V
VDC=300V
VDD=15V
350
300
250
200
150
100
50
900
800
700
600
500
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
800
0
700
0
2
4
6
8
Ic, Collector current [A]
10
12
14
16
18
0
2
4
6
8
10
Ic, Collector current [A]
12
14
16
0
2
4
6
Ic, Collector current [A]
8
10
12
14
16
18
20
Typ. Turn on propagation delay time
Typ. Turn on switching time
Typ. Turn off propagation delay time
10
700
400
350
300
250
200
150
100
50
VDC=300V
VDD=15V
VDC=300V
VDD=15V
600
500
400
300
200
100
0
1
0.1
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
D : duty ratio
D=50%
D=20%
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
D=10%
D=5%
D=2%
Single pulse
0.01
1E-3
1E-4
1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1
tP, Pulse width [sec.]
1
10 100
0
0
2
4
6
Ic, Collector current [A]
8
10
12
14
16
18
0
2
4
6
Ic, Collector current [A]
8
10
12
14
16
IGBT transient thermal resistance at all six
IGBTs operation
Typ. Turn off switching time
Typ. Reverse recovery time
Datasheet
14 of 17
V 2.9
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM10F60GA
Package Outline
Datasheet
15 of 17
V 2.9
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM10F60GA
Revision history
Document
version
Date of release
Description of changes
Maximum operating case temperature, Tc= 125°C
V 2.9
Sep. 2017
Package outline update
Datasheet
16 of 17
V 2.9
2017-09-06
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