IGD15N65T6 [INFINEON]
IGBT TRENCHSTOP™ 6;
| 型号： | IGD15N65T6 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 6 双极性晶体管 |
| 文件： | 总13页 (文件大小：3337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
IGBTꢀinꢀtrenchꢀandꢀfield-stopꢀtechnology
ꢀ
C
E
FeaturesꢀandꢀBenefits:
•ꢀVeryꢀlowꢀVCE(sat)ꢀ1.5Vꢀ(typ.)
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀwithstandꢀtimeꢀ3µs
Trenchꢀandꢀfield-stopꢀtechnologyꢀforꢀ650Vꢀapplicationsꢀoffersꢀ:
ꢀꢀꢀ•ꢀveryꢀtightꢀparameterꢀdistribution
ꢀꢀꢀ•ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
ꢀꢀꢀ•ꢀlowꢀVCEsatꢀandꢀpositiveꢀtemperatureꢀcoefficient
•ꢀLowꢀgateꢀchargeꢀQG
G
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPLECSꢀModels:
www.infineon.com/igbt
C
PotentialꢀApplications:
Drives
ꢀꢀ•ꢀGPDꢀ(generalꢀpurposeꢀdrives)
Majorꢀhomeꢀappliances
ꢀꢀ•ꢀAirꢀconditioning
G
ꢀꢀ•ꢀOtherꢀmajorꢀhomeꢀappliances
Smallꢀhomeꢀappliances
ꢀꢀ•ꢀOtherꢀsmallꢀhomeꢀappliances
E
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀto
theꢀrelevantꢀtestsꢀofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 175°C
Marking
Package
IGD15N65T6
650V
15A
G15ET6
PG-TO252-3
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Datasheet
2
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
30.0
18.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
57.5
57.5
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C
-
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
VGE
V
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ360V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
W
3
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
100.0
50.0
Ptot
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-a)
-
-
-
-
1.50 K/W
75 K/W
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
50 K/W
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ11.5A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ150°C
-
-
-
1.50 1.90
Collector-emitter saturation voltage VCEsat
V
1.65
1.75
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.20mA,ꢀVCEꢀ=ꢀVGE
4.8
5.6
6.4
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
Zero gate voltage collector current ICES
-
-
-
30
-
µA
360
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ11.5A
-
-
-
100
-
nA
S
11.3
Datasheet
3
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1020
50
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
20
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ11.5A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
37.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
30
22
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ11.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ47.0Ω,ꢀRG(off)ꢀ=ꢀ47.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ150pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
117
42
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.23
0.11
0.34
mJ
mJ
mJ
Turn-off energy
Total switching energy
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
27
23
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ11.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ47.0Ω,ꢀRG(off)ꢀ=ꢀ47.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ150pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
135
67
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.32
0.18
0.50
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
120
100
80
60
40
20
0
100
tp = 1µs
10
1
0.1
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
36
30
24
18
12
6
60
VGE=20V
18V
50
40
30
20
10
0
15V
12V
10V
8V
7V
6V
0
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
5
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
60
60
50
40
30
20
10
0
VGE=20V
Tvj = 25°C
Tvj = 150°C
18V
50
15V
12V
10V
40
8V
7V
30
6V
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4
6
8
10
12
14
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.6
td(off)
tf
td(on)
tr
IC = 23A
IC = 11.5A
IC = 5.75A
100
10
1
2.2
1.8
1.4
1.0
0
25
50
75
100
125
150
175
5
10
15
20
25
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀrG=47Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
6
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
10
20
30
40
50
60
70
80
90 100
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=11.5A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=11.5A,ꢀrG=47Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
6
5
4
3
2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
typ.
Eoff
Eon
Ets
25
50
75
100
125
150
175
4
8
12
16
20
24
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=0.20mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀrG=47Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
20
30
40
50
60
70
80
90 100
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=11.5A,ꢀrG=47Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=11.5A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.7
16
Eoff
Eon
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Ets
14
12
10
8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
4
2
0
200
250
300
350
400
450
500
0
5
10
15
20
25
30
35
40
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=11.5A,ꢀrG=47Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=11.5A)
Datasheet
8
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
1
1000
100
10
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Cies
Coes
Cres
i:
1
2
3
4
5
6
ri[K/W]: 1.7E-3 0.29395 1.03777 0.14936 0.01609 1.1E-3
τi[s]:
1.9E-5 2.1E-4
1.0E-3
5.7E-3
0.17693 3.6404
1
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
Package Drawing PG-TO252-3
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
0
A
A1
b
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
L
1.78
1.27
1.02
REVISION
L3
L4
06
Datasheet
10
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
11
Vꢀ2.3
2020-04-20
IGD15N65T6
TRENCHSTOP™ꢀIGBT6
RevisionꢀHistory
IGD15N65T6
Revision:ꢀ2020-04-20,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2020-03-16 Final Data sheet
2020-04-20 Final
2.2
2.3
Datasheet
12
Vꢀ2.3
2020-04-20
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2020.
AllꢀRightsꢀReserved.
ImportantꢀNotice
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird
party.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive
ElectronicsꢀCouncil.
Warnings
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
相关型号：
©2020 ICPDF网 联系我们和版权申明