IGP40N65H5 [INFINEON]
High speed 5 IGBT in TRENCHSTOP 5 technology; 高速5 IGBT的TRENCHSTOP 5技术
| 型号： | IGP40N65H5 |
| 厂家： | 
Infineon |
| 描述： | High speed 5 IGBT in TRENCHSTOP 5 technology |
| 文件： | 总15页 (文件大小：2488K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀꢀ5ꢀtechnology
IGP40N65H5,ꢀIGW40N65H5
650VꢀIGBTꢀhighꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀꢀ5ꢀtechnology
ꢀ
FeaturesꢀandꢀBenefits:
C
E
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTsꢀꢀ
•ꢀ650Vꢀbreakdownꢀvoltageꢀ
G
•ꢀLowꢀQg
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°Cꢀ
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplicationsꢀ
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
C
G
G
C
C
E
E
Applications:
•ꢀSolarꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
Packageꢀpinꢀdefinition:
•ꢀPinꢀ1ꢀ-ꢀgate
•ꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀ3ꢀ-ꢀemitter
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
Marking
Package
IGW40N65H5
IGP40N65H5
650V
650V
40A
40A
1.65V
1.65V
175°C
175°C
G40H655
G40H655
PG-TO247-3
PG-TO220-3
2
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing PG-TO247-pinGCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Maximumꢀratings
Parameter
Symbol
VCE
Value
650
Unit
Collector-emitter voltage
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
74.0
46.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
120.0
120.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C
-
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
VGE
Ptot
V
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
255.0
120.0
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
PG-TO247-pinGCE
PG-TO220-3
260
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-a)
0.60
K/W
K/W
Thermal resistance
junction - ambient
PG-TO247-pinGCE
PG-TO220-3
40
62
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
V
-
-
-
1.65 2.10
1.85
1.95
-
-
Tvjꢀ=ꢀ175°C
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40.0 µA
2000.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A
-
-
-
100
-
nA
S
50.0
4
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
2500
40
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
9
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ40.0A,ꢀ
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
95.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
PG-TO247-pinGCE
PG-TO220-3
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
22
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ15.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
165
13
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.39
0.12
0.51
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
4
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ15.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
190
24
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.09
0.05
0.14
mJ
mJ
mJ
5
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ15.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
195
22
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.54
0.20
0.74
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
5
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ15.0Ω,ꢀLσꢀ=ꢀ30nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
240
33
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.15
0.07
0.22
mJ
mJ
mJ
6
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
275
250
225
200
175
150
125
100
75
100
10
1
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
50
25
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V.
RecommendedꢀuseꢀatꢀVGE≥7.5V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
80
70
60
50
40
30
20
10
0
120
100
VGE=20V
18V
80
15V
12V
60
40
20
0
10V
8V
7V
6V
5V
25
50
75
100
125
150
175
0
1
2
3
4
5
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
7
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Tj=25°C
Tj=150°C
VGE=20V
18V
15V
12V
10V
8V
7V
6V
5V
0
1
2
3
4
5
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.50
1000
IC=10A
IC=20A
IC=40A
td(off)
tf
td(on)
tr
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
10
1
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=15Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
8
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
100
10
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1
1
5
15
25
35
45
55
65
75
85
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=20A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8
7
6
5
4
3
2
1
0
typ.
min.
max.
Eoff
Eon
Ets
0
25
50
75
100
125
150
0
20
40
60
80
100
120
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=0.4mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
9
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
5
15
25
35
45
55
65
75
85
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=20A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
1.0
16
Eoff
Eon
130V
520V
0.9
Ets
14
12
10
8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
4
2
0
200
250
300
350
400
450
500
0
20
40
60
80
100
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=40A)
10
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1E+4
1000
100
10
1
Ciss
Coss
Crss
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881
1
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
11
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
PG-TO247-3
12
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
PG-TO220-3
13
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
a
b
a
b
t
14
Rev.ꢀ1.1,ꢀꢀ2012-11-09
IGW40N65H5,ꢀIGP40N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IGW40N65H5, IGP40N65H5
Revision:ꢀ2012-11-09,ꢀRev.ꢀ1.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.1
2012-11-09 Preliminary data sheet
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and/orꢀautomotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineon
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automotive,ꢀaviationꢀandꢀaerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLife
supportꢀdevicesꢀorꢀsystemsꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustain
and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
15
Rev.ꢀ1.1,ꢀꢀ2012-11-09
相关型号：
IGP50N60TXKSA1
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
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