IGQ75N120S7 [INFINEON]
TRENCHSTOP™ IGBT7;
| 型号： | IGQ75N120S7 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT7 双极性晶体管 |
| 文件： | 总14页 (文件大小：1317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
Features
• VCE = 1200 V
• IC = 75 A
• Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C
• Short circuit ruggedness 8 µs
• Wide range of dv/dt controllability
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
• Industrial power supplies
• Solar
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IGQ75N120S7
PG-TO247-3-PLUS-NN3.7
G75MS7
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet
2
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
13
Unit
Min.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Thermal resistance,
junction-ambient
Rth(j-a)
Rth(j-c)
40
K/W
K/W
IGBT thermal resistance,
junction-case
0.17
0.24
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
1200
154
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current,
limited by Tvjmax
IC
limited by bondwire
Tc = 25 °C
Tc = 100 °C
103
Pulsed collector current, tp
limited by Tvjmax
ICpulse
225
A
A
Turn-off safe operating
area
VCE ≤ 1200 V, Tvj ≤ 175 °C
tp ≤ 0.5 µs, D < 0.001
225
Gate-emitter voltage
VGE
VGE
20
25
V
V
Transient gate-emitter
voltage
Short-circuit withstand
time
tSC
VCC ≤ 600 V, VGE = 15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 150 °C
8
µs
W
Power dissipation
Ptot
Tvj ≤ 175 °C
Tc = 25 °C
630
315
Tc = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.65
2
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 75 A, VGE = 15 V
Tvj = 25 °C
2
V
Tvj = 175 °C
(table continues...)
Datasheet
3
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
5.7
Unit
Min.
Max.
Gate-emitter threshold
voltage
VGEth
ICES
IC = 1.5 mA, VCE = VGE
VCE = 1200 V, VGE = 0 V
5.1
6.5
V
Zero gate-voltage collector
current
Tvj = 25 °C
20
µA
Tvj = 175 °C
6600
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = 20 V
100
nA
Transconductance
gfs
ISC
IC = 75 A, VCE = 20 V, Tvj = 175 °C
30
S
A
Short-circuit collector
current
VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed
number of short circuits < 1000, Time
between short circuits ≥ 1.0 s, Tvj = 150 °C
450
Input capacitance
Output capacitance
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
11.2
210
50
nF
pF
pF
Reverse transfer
capacitance
Gate charge
QG
IC = 75 A, VGE = 15 V, VCC = 960 V
450
38
nC
ns
Turn-on delay time
td(on)
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
36
23
Rise time (inductive load)
Turn-off delay time
tr
td(off)
tf
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
ns
ns
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
26
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
190
253
107
230
5.13
7.32
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
Fall time (inductive load)
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
ns
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
Turn-on energy
(table continues...)
Datasheet
Eon
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
mJ
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
4
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Turn-off energy
Eoff
Ets
Tvj
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
3.48
mJ
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
6.48
8.6
Total switching energy
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
mJ
°C
RG(on) = 2.1 Ω,
RG(off) = 2.1 Ω
IC = 75 A
Tvj = 175 °C,
IC = 75 A
13.8
Operating junction
temperature
-40
175
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance L = 30 nH, C = 18 pF. Energy losses include “tail” and diode
σ
σ
(IKQ75N120CS7) reverse recovery
Datasheet
5
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Characteristics diagrams
3
Characteristics diagrams
Reverse bias safe operating area
IC = f(VCE
Typical output characteristic
IC = f(VCE
)
)
Tvj ≤ 175 °C, VCE = 25 V
Tvj = 25 °C
225
200
175
150
125
100
75
100
10
1
50
25
0.1
1
0
10
100
1000
0
1
2
3
4
5
Typical output characteristic
IC = f(VCE
Typical transfer characteristic
IC = f(VGE
)
)
Tvj = 175 °C
VCE = 20 V
225
225
200
175
150
125
100
75
200
175
150
125
100
75
50
50
25
25
0
0
0
1
2
3
4
5
4
6
8
10
12
14
Datasheet
6
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature
VCEsat = f(Tvj)
Gate-emitter threshold voltage as a function of
junction temperature
VGEth = f(Tvj)
VGE = 15 V
IC = 1.5 mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
25
50
75
100
125
150
175
25
50
75
100
125
150
Typical switching times as a function of collector
current
t = f(IC)
Typical switching times as a function of gate resistor
t = f(RG)
IC = 75 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 2.1 Ω
10000
1000
100
10
10000
1000
100
1
10
0
30
60
90
120
150
2
4
6
8
10
12
14
16
Datasheet
7
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Characteristics diagrams
Typical switching times as a function of junction
temperature
Typical switching energy losses as a function of
collector current
t = f(Tvj)
E = f(IC)
IC = 75 A, VCC = 600 V, VGE = 0/15 V, RG = 2.1 Ω
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 2.1 Ω
1000
100
10
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
0
30
60
90
120
150
Typical switching energy losses as a function of gate
resistor
Typical switching energy losses as a function of
junction temperature
E = f(RG)
E = f(Tvj)
IC = 75 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 75 A, VCC = 600 V, VGE = 0/15 V, RG = 2.1 Ω
21
18
15
12
9
14
12
10
8
6
4
6
2
3
0
0
25
50
75
100
125
150
175
2
4
6
8
10
12
14
16
Datasheet
8
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Characteristics diagrams
Typical switching energy losses as a function of
collector emitter voltage
Typical gate charge
VGE = f(QG)
IC = 75 A
E = f(VCE
)
IC = 75 A, Tvj = 175 °C, VGE = 0/15 V, RG = 2.1 Ω
20
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
400 450 500 550 600 650 700 750 800
100
200
300
400
500
Typical capacitance as a function of collector-emitter Typical short circuit collector current as a function of
voltage
C = f(VCE
gate-emitter voltage
IC(SC) = f(VGE
)
)
f = 100 kHz, VGE = 0 V
Tvj = 150 °C, VCC ≤ 600 V
600
10000
1000
100
10
500
400
300
200
100
0
1
0
5
10
15
20
25
30
12
13
14
15
16
17
Datasheet
9
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Characteristics diagrams
Short circuit withstand time as a function of gate-
emitter voltage
IGBT transient thermal impedance as a function of
pulse width
Zth(j-c) = f(tp)
D = tp/T
tSC = f(VGE
)
Tvj ≤ 150 °C, VCC ≤ 600 V
14
1
13
12
11
10
9
0.1
0.01
0.001
0.0001
1E-5
8
7
6
5
4
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
12
13
14
15
16
17
Datasheet
10
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Package outlines
4
Package outlines
PG-TO247-3-PLUS-NN3.7
PACKAGE - GROUP
NUMBER:
PG-TO247-3-U01
MILLIMETERS
DIMENSIONS
MIN.
4.90
2.31
1.90
1.16
---
MAX.
5.10
2.51
2.10
1.26
2.25
2.06
3.25
3.06
0.66
21.10
16.85
1.35
0.78
15.90
13.50
1.55
A
A1
A2
b
b1
b2
b3
b4
c
1.96
---
2.96
0.59
20.90
16.25
1.05
0.58
15.70
13.10
1.35
D
D1
D2
D3
E
E1
E2
e
5.44 (BSC)
N
3
L
19.80
3.90
1.90
20.10
4.30
2.10
L1
R
Figure 1
Datasheet
11
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
5 Testing conditions
5
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
12
Revision 1.10
2023-01-23
IGQ75N120S7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
1.00
1.10
2022-05-04
2022-12-05
2023-01-23
Target datasheet
Final datasheet
Correction of boundary condition of diagrams IC(SC) = f(VGE) and tSC
=
f(VGE
)
Change of product outline drawing on page 11
Datasheet
13
Revision 1.10
2023-01-23
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-01-23
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Warnings
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2023 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-ABD200-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
相关型号：
©2020 ICPDF网 联系我们和版权申明