IGZ75N65H5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IGZ75N65H5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总13页 (文件大小：1937K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnology
IGZ75N65H5
650VꢀIGBTꢀhighꢀspeedꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnology
ꢀ
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀUltraꢀlowꢀlossꢀswitchingꢀthanksꢀtoꢀKelvinꢀemitterꢀpinꢀin
combinationꢀwithꢀTRENCHSTOPTMꢀ5
•ꢀBest-in-classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
•ꢀSolarꢀstringꢀinverters
Packageꢀpinꢀdefinition:
•ꢀPinꢀCꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀEꢀ-ꢀemitter
•ꢀPinꢀKꢀ-ꢀKelvinꢀemitter
•ꢀPinꢀGꢀ-ꢀgate
Pleaseꢀnote:ꢀTheꢀemitterꢀandꢀKelvinꢀemitterꢀpinsꢀareꢀnot
exchangeable.ꢀTheirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
IGZ75N65H5
650V
75A
G75EH5
PG-TO247-4
2
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
119.0
75.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
VGE
Ptot
V
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
395.0
197.0
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-a)
0.38
40
K/W
K/W
Thermal resistance
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ100°C
650
-
-
V
V
V
-
-
-
1.65 2.10
1.82
1.90
-
-
Tvjꢀ=ꢀ150°C
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.75mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
75.0 µA
-
850.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
100
-
nA
S
104.0
1) Defined by design. Not subject to production test.
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4300
75
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
16
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
166.0
13.0
-
-
nC
nH
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
26
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ37.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ18.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ75N65EH5.
Turn-off delay time
Fall time
347
15
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.68
0.43
1.11
mJ
mJ
mJ
Turn-off energy
Total switching energy
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
24
13
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ37.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ18.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ75N65EH5.
Turn-off delay time
Fall time
400
15
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.10
0.48
1.58
mJ
mJ
mJ
Turn-off energy
Total switching energy
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
400
350
300
250
200
150
100
50
100
10
1
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(Tvj≤175°C)
120
100
80
60
40
20
0
300
VGE = 19V
270
18V
15V
240
14V
210
11V
180
150
120
90
9V
8V
7V
5V
60
30
0
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
6
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
300
270
240
210
180
150
120
90
300
VGE=19V
17V
15V
11V
9V
Tvj = 25°C
Tvj = 175°C
270
240
210
180
150
120
90
8V
60
60
30
30
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3
4
5
6
7
8
9
10
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.50
1000
100
10
IC = 20A
IC = 37.5A
IC = 75A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
td(off)
tf
td(on)
tr
1
25
50
75
100
125
150
175
0
25
50
75 100 125 150 175 200 225
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
test circuit in Figure E)
7
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1000
td(off)
tf
td(on)
tr
1000
100
10
100
10
td(off)
tf
td(on)
tr
1
1
0
10
20
30
40
50
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=37.5A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=37.5A,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
test circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
9
8
7
6
5
4
3
2
1
0
typ.
min.
max.
Eoff
Eon
Ets
25
50
75
100
125
150
0
25
50
75 100 125 150 175 200 225
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0.75mA)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,
dynamic test circuit in Figure E)
8
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.8
Eoff
Eon
Ets
Eoff
Eon
Ets
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
VGE=0/15V,ꢀIC=37.5A,ꢀdynamicꢀtestꢀcircuitꢀin
IC=37.5A,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
Figure E)
test circuit in Figure E)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
16
14
12
10
8
Eoff
Eon
Ets
VCE = 130V
VCE = 520V
6
4
2
0
200
250
300
350
400
0
20
40
60
80 100 120 140 160 180
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
Figure 16. Typicalꢀgateꢀcharge
(IC=75A)
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=37.5A,ꢀRG(on)=10Ω,ꢀRG(off)=18Ω,ꢀdynamic
test circuit in Figure E)
9
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IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Cies
Coes
Cres
1E+4
1000
100
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]:
2.8E-5
2.3E-4
2.3E-3
0.013145 0.113481 1.869237
10
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
10
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
11
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
parasitic
relief
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
12
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IGZ75N65H5
High speed series fifth generation
Revision History
IGZ75N65H5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-10-17 Preliminary data sheet
2014-10-31 Final data sheet
1.1
2.1
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Published by
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81726 München, Germany
© 2014 Infineon Technologies AG
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application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
13
Rev. 2.1, 2014-10-31
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