IHFW40N65R5S [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IHFW40N65R5S |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总16页 (文件大小：1597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
Reverse-ConductingꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀwithꢀmonolithic
bodyꢀdiodeꢀinꢀfullyꢀisolatedꢀpackage
ꢀ
C
FeaturesꢀandꢀBenefits:
TRENCHSTOPTMꢀ5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
G
E
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀ2500VRMSꢀelectricalꢀisolation,ꢀ50/60Hz,ꢀt=1min
•ꢀ100%ꢀtestedꢀisolatedꢀmountingꢀsurface
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
PotentialꢀApplications:
Fully isolated package TO-247
•ꢀInductionꢀcooking
•ꢀInverterizedꢀmicrowaveꢀovens
•ꢀResonantꢀconverters
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 175°C
Marking
Package
IHFW40N65R5S
650V
40A
H40ER5S
PG-HSIP247-3-2
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
www.infineon.com
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
Thꢀ=ꢀ65°C
61.0
49.0
IC
A
52.01)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
120.0
120.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
IF
44.0
40.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
120.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀThꢀ=ꢀ25°C
PowerꢀdissipationꢀThꢀ=ꢀ65°C
108.0
79.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min2)
M
Nm
V
Visol
2500
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,3)
junction - heatsink
Diode thermal resistance,3)
junction - heatsink
Rth(j-h)
Rth(j-h)
Rth(j-a)
-
-
-
1.19 1.39 K/W
3.32 3.90 K/W
Thermal resistance
junction - ambient
-
65 K/W
1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier
insulator
2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3) At force on body F = 500N, Ta = 25ºC
Datasheet
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IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A
650
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.50 2.00
1.85
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
2.00 2.40
V
V
2.60
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
1000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A
-
-
-
100
-
nA
S
88.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
3428
34
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
13
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
142.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
44
38
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ23.1Ω,ꢀRG(off)ꢀ=ꢀ23.1Ω,
Lσꢀ=ꢀ40nH,ꢀCσꢀ=ꢀ50pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
363
27
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.52
0.70
2.22
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
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2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
103
2.48
39.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ40.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ900A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1493
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
40
39
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ23.1Ω,ꢀRG(off)ꢀ=ꢀ23.1Ω,
Lσꢀ=ꢀ40nH,ꢀCσꢀ=ꢀ50pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
424
30
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.64
0.86
2.50
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
149
4.49
51.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ40.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ900A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-905
-
A/µs
Datasheet
5
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
120
100
80
60
40
20
0
100
not for linear use
10
1
0.1
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀheatsink
(D=0,ꢀTh=25°C,ꢀTj≤175°C,ꢀVGE=15V,ꢀtp≤1µs)
temperature
(Tj≤175°C)
70
60
50
40
30
20
10
0
120
VGE = 20V
100
17V
15V
13V
11V
9V
80
60
40
20
0
8V
7V
6V
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀheatsink
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
(VGE≥15V,ꢀTj≤175°C)
Datasheet
6
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2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
120
120
100
80
60
40
20
0
Tvj = 25°C
Tvj = 150°C
VGE = 20V
100
17V
15V
13V
11V
9V
80
60
40
20
0
8V
7V
6V
5V
0
1
2
3
4
5
2
3
4
5
6
7
8
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
3.0
IC = 20A
IC = 40A
IC = 60A
td(off)
tf
td(on)
tr
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
1
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
RG=23.1Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Datasheet
7
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1000
1000
100
10
100
10
1
1
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
IC=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀVCE=400V,ꢀVGE=0/15V,ꢀIC=40A,
rG=23.1Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
typ.
min.
max.
Eoff
Eon
Ets
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0.4mA)
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
RG=23.1Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Datasheet
8
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2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
5.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
IC=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀVCE=400V,ꢀVGE=0/15V,ꢀIC=40A,
RG=23.1Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Eoff
Eon
Ets
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
14
12
10
8
6
4
2
0
200
300
400
500
600
0
20
40
60
80
100 120 140 160
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀTj=150°C,ꢀVGE=0/15V,ꢀIC=40A,
RG=23.1Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Figure 16. Typicalꢀgateꢀcharge
(IC=40A)
Datasheet
9
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2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
Cies
Coes
1E+4
1
Cres
D = 0.5
0.2
1000
0.1
0.05
0.1
0.02
0.01
single pulse
100
10
1
0.01
i:
ri[K/W]: 0.015257 0.27071 0.29854 0.24739 0.34111 0.20394 0.017347
τi[s]: 2.6E-5 3.0E-4 2.6E-3 0.022827 0.287773 1.293832 18.69534
1
2
3
4
5
6
7
0.001
1E-6 1E-5 1E-4 0.001 0.01
0
5
10
15
20
25
30
0.1
1
10
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(VGE=0V,ꢀf=1MHz)
(D=tp/T)
200
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
180
160
140
120
100
80
1
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
60
0.01
40
20
i:
ri[K/W]: 0.034177 2.3111 0.68651 0.28831 0.27698 0.28622 0.0169
τi[s]: 1.8E-5 2.2E-4 1.5E-3 0.018085 0.20635 0.990087 18.58714
1
2
3
4
5
6
7
0.001
0
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
400
500
600
700
800
900
1000
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
Datasheet
10
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
6
60
50
40
30
20
10
0
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
5
4
3
2
1
0
400
500
600
700
800
900
1000
400
500
600
700
800
900
1000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
120
Tvj = 25°C, IF = 40A
Tvj = 25°C
Tvj = 150°C, IF = 40A
Tvj = 150°C
-200
100
80
60
40
20
0
-400
-600
-800
-1000
-1200
-1400
-1600
-1800
-2000
400
500
600
700
800
900
1000
0
1
2
3
4
5
6
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
Datasheet
11
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
4.0
IF = 20A
IF = 40A
IF = 60A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
PG-HSIP247-3-2
MILLIMETERS
MILLIMETERS
DIMENSIONS
DIMENSIONS
MIN.
-
MAX.
5.18
4.90
2.66
0.28
1.50
0.51
1.90
MIN.
MAX.
A
A1
A2
A3
A4
A5
A6
A7
b
e
5.44
4.70
2.16
0.20
1.30
0.31
1.70
E
15.70
13.68
15.90
13.88
E1
E2
E3
E4
E5
E6
L
DOCUMENT NO.
Z8B00195711
(6.00)
3.24
4.39
3.44
4.59
REVISION
01
(1.45)
(0.25)
0.76
18.01
2.26
1.50
3.50
5.70
6.06
0.96
18.21
2.46
1.70
3.70
5.90
6.26
SCALE 3:1
1.10
1.30
0 1 2 3 4 5 6 7 8mm
b1
b2
b3
c
(2.88)
(1.60)
L1
L2
P
-
0.15
0.70
EUROPEAN PROJECTION
0.50
22.70
16.96
2.34
-
P1
Q
D
22.90
17.16
2.54
D1
D2
D3
D4
0.30
ISSUE DATE
28.06.2019
4.35
4.55
Datasheet
13
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2020-07-10
IHFW40N65R5S
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
RevisionꢀHistory
IHFW40N65R5S
Revision:ꢀ2020-07-10,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2020-05-07 Preliminary Data Sheet
2020-07-10 Final data sheet
1.1
2.1
Datasheet
15
Vꢀ2.1
2020-07-10
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