IHW50N65R5 [INFINEON]
IGBT RC Soft Switching;
| 型号： | IHW50N65R5 |
| 厂家： | 
Infineon |
| 描述： | IGBT RC Soft Switching 双极性晶体管 |
| 文件： | 总15页 (文件大小：2128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ResonantꢀSwitchingꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
IHW50N65R5
Dataꢀsheet
IndustrialꢀPowerꢀControl
IHW50N65R5
ResonantꢀSwitchingꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
ꢀ
C
Features:
•ꢀPowerfulꢀmonolithicꢀreverse-conductingꢀdiodeꢀwithꢀlowꢀforward
voltage
•ꢀTRENCHSTOPTMꢀtechnologyꢀoffers:
-ꢀveryꢀtightꢀparameterꢀdistribution
-ꢀhighꢀruggednessꢀandꢀstableꢀtemperatureꢀbehavior
-ꢀveryꢀlowꢀVCEsatꢀandꢀlowꢀEoff
G
E
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive
temperatureꢀcoefficientꢀinꢀVCEsat
•ꢀLowꢀEMI
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀInductionꢀcooking
•ꢀInverterizedꢀmicrowaveꢀovens
•ꢀResonantꢀconverters
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.35V 175°C
Marking
Package
IHW50N65R5
650V
50A
H50ER5
PG-TO247-3
2
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IC
80.0
50.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
150.0
150.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
37.0
22.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
150.0
±20
A
V
Gate-emitter voltage
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
282.0
141.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.53
2.29
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
4
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
650
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.35 1.70
1.60
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.70 2.10
V
V
2.00
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
1250
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
120.0
none
Integrated gate resistor
rG
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
6140
55
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
23
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
230.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
30
20
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ8.0Ω,ꢀRG(off)ꢀ=ꢀ8.0Ω,
Lσꢀ=ꢀ45nH,ꢀCσꢀ=ꢀ32pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
210
8
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.50
0.45
1.95
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
137
2.75
37.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ50.0A,
diF/dtꢀ=ꢀ1100A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1100
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
29
22
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ8.0Ω,ꢀRG(off)ꢀ=ꢀ8.0Ω,
Lσꢀ=ꢀ45nH,ꢀCσꢀ=ꢀ32pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
240
21
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.76
0.73
2.49
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
145
5.45
60.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ50.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1100A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2050
-
A/µs
6
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
280
240
200
160
120
80
100
10
1
not for linear use
40
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Safeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs)
temperature
(Tvj≤175°C)
90
80
70
60
50
40
30
20
10
0
150
VGE = 20V
140
17V
130
15V
120
13V
110
11V
9V
8V
7V
6V
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
7
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
150
135
120
105
90
150
VGE = 20V
17V
15V
13V
11V
9V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
140
130
120
110
100
90
8V
7V
80
6V
75
5V
70
60
60
50
45
40
30
30
20
15
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
7
8
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.00
1000
ICꢀ=ꢀ10A
ICꢀ=ꢀ25A
ICꢀ=ꢀ50A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
td(off)
tf
td(on)
tr
100
10
1
0
25
50
75
100
125
150
175
0
20
40
60
80
100
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=8Ω,ꢀRG(off)=8Ω,ꢀdynamic
test circuit in Figure E)
8
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
1E+4
1000
100
10
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
1
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=50A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=50A,ꢀRG(on)=8Ω,ꢀRG(off)=8Ω,ꢀdynamicꢀtest
circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7
6
5
4
3
2
1
0
typ.
min.
max.
Eoff
Eon
Ets
0
25
50
75
100
125
150
0
20
40
60
80
100
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=0.5mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=8Ω,ꢀRG(off)=8Ω,ꢀdynamic
test circuit in Figure E)
9
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.50
Eoff
Eon
Ets
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Eoff
Eon
Ets
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=50A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=50A,ꢀRG(on)=8Ω,ꢀRG(off)=8Ω,ꢀdynamicꢀtest
circuit in Figure E)
20
1E+4
1000
100
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
18
16
14
12
10
8
Cies
Coes
Cres
6
4
2
0
10
0
50
100
150
200
250
300
350
0
3
6
9
12 15 18 21 24 27 30
QG,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=50A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
10
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
1
D = 0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.1
0.01
0.01
single pulse
single pulse
0.1
i:
1
2
3
4
i:
1
2
3
4
5
ri[K/W]: 0.1509923 0.1847515 0.1958118 6.0E-3
ri[K/W]: 0.7038717 1.0081 0.3567227 0.2177746 8.5E-3
τi[s]:
2.0E-4
3.3E-3
0.0146925 0.2126033
τi[s]:
1.4E-4
3.7E-4 3.4E-3
0.01523878 0.2085516
0.01
0.01
1E-6
1E-5
1E-4
0.001
0.01
0.1
1E-6
1E-5
1E-4
0.001
0.01
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(D=tp/T)
250
7
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ50A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ50A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ50A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ50A
225
200
175
150
125
100
75
6
5
4
3
2
1
50
0
500 600 700 800 900 1000 1100 1200 1300
500 600 700 800 900 1000 1100 1200 1300
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
11
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
70
60
50
40
30
20
10
0
0
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ50A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ50A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ50A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ50A
-300
-600
-900
-1200
-1500
-1800
-2100
-2400
-2700
-3000
500 600 700 800 900 1000 1100 1200 1300
500 600 700 800 900 1000 1100 1200 1300
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
150
2.50
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
IFꢀ=ꢀ10A
IFꢀ=ꢀ25A
135
IFꢀ=ꢀ50A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
120
105
90
75
60
45
30
15
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
12
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
Package Drawing PG-TO247-3
13
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
14
Rev.ꢀ2.4,ꢀꢀ2015-12-18
IHW50N65R5
ResonantꢀSwitchingꢀSeries
RevisionꢀHistory
IHW50N65R5
Revision:ꢀ2015-12-18,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
-
1.1
1.2
2.1
2.2
2.3
2.4
2014-06-13 Preliminary data sheet
2014-06-16
2014-09-12 Final data sheet
2014-11-27 Update of diode forward current values
2014-12-16 UpdateꢀFig.14ꢀEon,ꢀEoffꢀatꢀ25°C
2015-12-18 Minor change Conditions Static Characteristic
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2015.
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
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15
Rev.ꢀ2.4,ꢀꢀ2015-12-18
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