IKCM15L60GD_15 [INFINEON]
Control Integrated POwer System;
| 型号： | IKCM15L60GD_15 |
| 厂家： | 
Infineon |
| 描述： | Control Integrated POwer System |
| 文件： | 总16页 (文件大小：916K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Control Integrated POwer
System (CIPOS™)
IKCM15L60GD
Datasheet
For Power Management Application
1
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Table of Contents
CIPOS Control Integrated POwer System............................................................................................................3
Features..............................................................................................................................................................3
Target Applications ...........................................................................................................................................3
Description.........................................................................................................................................................3
System Configuration .......................................................................................................................................3
Pin Configuration....................................................................................................................................................4
Internal Electrical Schematic.................................................................................................................................4
Pin Assignment.......................................................................................................................................................5
Pin Description ..................................................................................................................................................5
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12)................................................5
VFO (Fault-output and NTC, Pin 14).................................................................................................................6
ITRIP (Over current detection function, Pin 15) ................................................................................................6
VDD, VSS (Low side control supply and reference, Pin 13, 16).......................................................................6
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6)...............................................................................6
NW, NV, NU (Low side emitter, Pin 17 - 19).....................................................................................................6
W, V, U (High side emitter and low side collector, Pin 20 - 22) ........................................................................6
P (Positive bus input voltage, Pin 23)................................................................................................................6
Absolute Maximum Ratings...................................................................................................................................7
Module Section ..................................................................................................................................................7
Inverter Section..................................................................................................................................................7
Control Section..................................................................................................................................................7
Recommended Operation Conditions..................................................................................................................8
Static Parameters ...................................................................................................................................................9
Dynamic Parameters ............................................................................................................................................10
Bootstrap Parameters ..........................................................................................................................................10
Thermistor 11
Mechanical Characteristics and Ratings............................................................................................................11
Circuit of a Typical Application...........................................................................................................................12
Switching Times Definition..................................................................................................................................12
Electrical characteristic .......................................................................................................................................13
Package Outline....................................................................................................................................................14
Datasheet
2
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
CIPOS
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ-bridge 600V / 15A
Features
Description
The CIPOS module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
Fully isolated Dual In-Line molded module
TrenchStop® IGBTs
Rugged SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
It is designed to control three phase AC motors and
permanent magnet motors in variable speed drives
for applications like an air conditioning,
a
refrigerator and a washing machine. The package
concept is specially adapted to power applications,
which need good thermal conduction and electrical
isolation, but also EMI-save control and overload
protection.
TrenchStop® IGBTs and anti parallel diodes are
combined with an optimized SOI gate driver for
excellent electrical performance.
Integrated bootstrap functionality
Over current shutdown
Temperature monitor
Under-voltage lockout at all channels
Low side emitter pins accessible for all phase
current monitoring (open emitter)
Cross-conduction prevention
All of 6 switches turn off during protection
Lead-free terminal plating; RoHS compliant
Very low thermal resistance due to DCB
System Configuration
3 half bridges with TrenchStop® IGBTs and anti
parallel diodes
3Φ SOI gate driver
Target Applications
Home appliances
Thermistor
Pin-to-heatsink creepage distance typ. 1.6mm
Low power motor drives
Datasheet
3
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Pin Configuration
Bottom View
(24) NC
(1) VS(U)
(2) VB(U)
(23) P
(22) U
(21) V
(20) W
(19) NU
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
(18) NV
(17) NW
(15) ITRIP
(16) VSS
Figure 1: Pin configuration
Internal Electrical Schematic
NC (24)
P (23)
U (22)
(1) VS(U)
(2) VB(U)
VB1
VB2
HO1
VS1
RBS1
(3) VS(V)
(4) VB(V)
HO2
VS2
RBS2
V (21)
(5) VS(W)
(6) VB(W)
HO3
VS3
VB3
W (20)
RBS3
LO1
LO2
LO3
(7) HIN(U)
(8) HIN(V)
HIN1
HIN2
NU (19)
NV (18)
NW (17)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
(11) LIN(V)
(12) LIN(W)
(13) VDD
LIN2
LIN3
VDD
VFO
(14) VFO
(15) ITRIP
ITRIP
VSS
(16) VSS
Figure 2: Internal schematic
Datasheet
Thermistor
4
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Pin Assignment
Pin Number Pin Name
Pin Description
1
2
VS(U)
VB(U)
VS(V)
VB(V)
VS(W)
VB(W)
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
VDD
VFO
ITRIP
VSS
U-phase high side floating IC supply offset voltage
U-phase high side floating IC supply voltage
V-phase high side floating IC supply offset voltage
V-phase high side floating IC supply voltage
W-phase high side floating IC supply offset voltage
W-phase high side floating IC supply voltage
U-phase high side gate driver input
V-phase high side gate driver input
W-phase high side gate driver input
U-phase low side gate driver input
V-phase low side gate driver input
W-phase low side gate driver input
Low side control supply
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Fault output / Temperature monitor
Over current shutdown input
Low side control negative supply
W-phase low side emitter
NW
NV
V-phase low side emitter
NU
U-phase low side emitter
W
Motor W-phase output
V
Motor V-phase output
U
Motor U-phase output
P
Positive bus input voltage
NC
No Connection
Pin Description
CIPOS
Schmitt-Trigger
HIN(U,V,W) and LIN(U,V,W) (Low side and high
HINx
LINx
INPUT NOISE
FILTER
side control pins, Pin 7 - 12)
UZ=10.5V
5k
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5k is internally provided to pre-bias inputs
during supply start-up and a zener clamp is
provided for pin protection purposes. Input Schmitt-
trigger and noise filter provide beneficial noise
rejection to short input pulses.
SWITCH LEVEL
VIH; VIL
VSS
Figure 3: Input pin structure
a)
b)
tFILIN
tFILIN
HIN
LIN
HIN
LIN
high
HO
LO
HO
LO
low
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4.
Figure 4: Input filter timing diagram
Datasheet
5
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
It is recommended for proper work of CIPOS not to
provide input pulse-width lower than 1us.
VDDUV- = 10.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive power
dissipation.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3
and LO3). When two inputs of a same leg are
activated, only former activated one is activated so
that the leg is kept steadily in a safe state.
VB(U,V,W) and VS(U,V,W) (High side supplies,
Pin 1 - 6)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter voltage.
A minimum deadtime insertion of typically 380ns is
also provided by driver IC, in order to reduce cross-
conduction of the external power switches.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
VFO (Fault-output and NTC, Pin 14)
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP. A pull-up resistor is
externally required to bias the NTC.
VS(U,V,W) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
CIPOS
VDD
VFO
RON,FLT
From ITRIP - Latch
NW, NV, NU (Low side emitter, Pin 17 - 19)
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
1
VSS
From UV detection
Thermistor
Figure 5: Internal circuit at pin VFO
W, V, U (High side emitter and low side collector,
The same pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures, that the resulting
voltage can be directly connected to the
microcontroller.
Pin 20 - 22)
These pins are motor U, V, W input pins
P (Positive bus input voltage, Pin 23)
The high sides of IGBT are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V.
ITRIP (Over current detection function, Pin 15)
CIPOS provides an over current detection function
by connecting the ITRIP input with the motor current
feedback. The ITRIP comparator threshold (typ.
0.47V) is referenced to VSS ground. A input noise
filter (typ: tITRIPMIN = 530ns) prevents the driver to
detect false over-current events.
Over current detection generates a shut down of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns. The fault-
clear time is set to typical 65us.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The IC shuts down all the gate drivers’ power
outputs, when the VDD supply voltage is below
Datasheet
6
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Absolute Maximum Ratings
(VDD = 15V and TC = 25°C, if not stated otherwise)
Module Section
Value
Description
Condition
Symbol
Unit
min
-40
max
125
-
Storage temperature range
Insulation test voltage
Tstg
VISOL
TC
°C
V
RMS, f = 60Hz, t =1min
Refer to Figure 6
2000
-40
Operating case temperature range
100
°C
Inverter Section
Description
Value
Condition
Symbol
Unit
min
max
-
Max. blocking voltage
IC = 250µA
VCES
VPN
600
V
V
V
DC link supply voltage of P-N
DC link supply voltage (surge) of P-N
Applied between P-N
Applied between P-N
-
-
450
500
VPN(surge)
TC = 25°C, TJ < 150°C
TC = 80°C, TJ < 150°C
-20
-15
20
15
Output current
IC
A
Maximum peak output current
Short circuit withstand time1
less than 1ms
IC
tSC
Ptot
TJ
-40
-
40
5
A
VDC ≤400V, TJ = 150°C
µs
W
°C
Power dissipation per IGBT
-
58.6
150
Operating junction temperature range
-40
Single IGBT thermal resistance,
junction-case
RthJC
-
-
2.13
3.42
K/W
K/W
Single diode thermal resistance,
junction-case
RthJCD
Control Section
Value
Description
Condition
Symbol
Unit
min
max
Module supply voltage
VDD
VBS
-1
20
V
V
High side floating supply voltage
(VB vs. VS)
-1
20
VIN
VITRIP
-1
-1
Input voltage
LIN, HIN, ITRIP
10
20
V
Switching frequency
fPWM
-
kHz
1 Allowed number of short circuits: <1000; time between short circuits: > 1s.
Datasheet
7
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
DC link supply voltage of P-N
Symbol
Unit
min
0
typ
-
max
400
VPN
VBS
VDD
V
V
V
High side floating supply voltage (VB vs. VS)
Low side supply voltage
13.5
14.5
-
18.5
18.5
16
ΔVBS,
ΔVDD
-1
-1
1
1
Control supply variation
-
V/µs
VIN
VITRIP
0
0
5
5
Logic input voltages LIN,HIN,ITRIP
Between VSS - N (including surge)
-
-
V
V
VSS
-5
5
Figure 6: TC measurement point1
1Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
8
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Static Parameters
(VDD = 15V and TC = 25°C, if not stated otherwise)
Value
typ
Description
Condition
Symbol
Unit
min
max
Iout = 10A, TJ = 25°C
150°C
-
-
1.55
1.85
2.1
-
Collector-Emitter saturation voltage
Emitter-Collector forward voltage
VCE(sat)
V
V
Iout = -10A, TJ = 25°C
150°C
-
-
1.75
1.8
2.45
-
VF
Collector-Emitter leakage current
Logic "1" input voltage (LIN,HIN)
Logic "0" input voltage (LIN,HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VCE = 600V
ICES
VIH
-
-
1
2.5
-
mA
V
-
2.1
0.9
470
70
VIL
0.7
400
40
V
VIT,TH+
VIT,HYS
540
-
mV
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
9.5
1.0
-
12.1
10.4
1.7
13.0
11.2
-
V
V
VDD and VBS supply under voltage
negative going threshold
VDDUV-
VBSUV-
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
V
Quiescent VBx supply current
(VBx only)
HIN = 0V
IQBS
300
370
500
900
µA
µA
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX=5V
IQDD
IIN+
-
Input bias current
VIN = 5V
-
-
-
-
-
1
2
1.5
mA
µA
µA
µA
V
Input bias current
VIN = 0V
-
IIN-
IITRIP+
IFO
ITRIP input bias current
VFO input bias current
VFO output voltage
VITRIP = 5V
65
60
0.5
150
VFO = 5V, VITRIP = 0V
IFO = 10mA, VITRIP = 1V
-
-
VFO
Datasheet
9
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Dynamic Parameters
(VDD = 15V and TC = 25°C, if not stated otherwise)
Value
typ
680
30
Description
Condition
Symbol
Unit
min
max
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
VLIN,HIN = 5V,
Iout = 10A,
VDC = 300V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
tc(on)
trr
220
60
toff
950
55
VLIN,HIN = 0V,
Iout = 10A,
VDC = 300V
tf
Turn-off switching time
Short circuit propagation delay time
Input filter time ITRIP
tc(off)
tSCP
tITRIPmin
120
1250
530
From VIT,TH+ to 10% ISC
VITRIP = 1V
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
VITRIP = 1V
tFILIN
tFLTCLR
DTPWM
DTIC
-
40
1.5
-
290
65
-
-
ns
µs
µs
ns
µJ
Fault clear time after ITRIP-fault
200
Deadtime between low side and high
side
-
Deadtime of gate drive circuit
380
-
IGBT turn-on energy (includes
reverse recovery of diode)
VDC = 300V, TJ = 25°C
-
-
400
490
-
-
Eon
IC = 10A
VDC = 300V, TJ = 25°C
IC = 10A 150°C
VDC = 300V, TJ = 25°C
150°C
-
-
190
290
-
-
IGBT turn-off energy
Eoff
µJ
µJ
-
-
55
70
-
-
Diode recovery energy
Erec
IC = 10A
150°C
Bootstrap Parameters
(TC = 25°C, if not stated otherwise)
Value
Description
Condition
Symbol
Unit
min
typ
max
Repetitive peak reverse
voltage
VRRM
600
V
VS2 or VS3 = 300V, TJ = 25°C
VS2 and VS3 = 0V, TJ = 25°C
VS2 or VS3 = 300V, TJ = 125°C
VS2 and VS3 = 0V, TJ = 125°C
-
-
-
-
35
40
50
65
-
-
-
-
Bootstrap resistance of
U-phase1
RBS1
Reverse recovery time
IF = 0.6A, di/dt=80A/µs
trr_BS
-
-
50
-
-
ns
VF_BS
Forward voltage drop
2.6
V
IF = 20mA, VS2 and VS3 = 0V
1 RBS2 and RBS3 have same values to RBS1
.
Datasheet
10
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Thermistor
Value
typ
Description
Condition
Symbol
Unit
min
max
Resistor
TNTC = 25°C
RNTC
-
85
-
k
B-constant of NTC
(Negative temperature coefficient)
B(25/100)
-
4092
-
K
3500
35
3000
2500
2000
1500
1000
500
Min.
Typ.
Max.
30
25
20
15
10
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
Thermistor temperature [℃]
0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7: Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN CIPOS-mini 1 Technical description’)
Mechanical Characteristics and Ratings
Value
Unit
Description
Mounting torque
Condition
min
0.49
-50
-
typ
max
M3 screw and washer
Refer to Figure 7
-
-
0.78
100
-
Nm
µm
g
Flatness
Weight
6.58
Figure 8: Flatness measurement position
Datasheet
11
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Circuit of a Typical Application
NC (24)
P (23)
(1) VS(U)
(2) VB(U)
VB1
VB2
HO1
VS1
U(22)
V (21)
W (20)
RBS1
(3) VS(V)
(4) VB(V)
HO2
VS2
3-ph AC
Motor
RBS2
(5) VS(W)
(6) VB(W)
HO3
VS3
VB3
RBS3
(7) HIN(U)
(8) HIN(V)
LO1
LO2
LO3
HIN1
HIN2
NU (19)
NV (18)
NW (17)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
Micro
Controller
(11) LIN(V)
LIN2
LIN3
VDD
VFO
ITRIP
(12) LIN(W)
(13) VDD
VDD line
(14) VFO
5 or 3.3V line
(15) ITRIP
(16) VSS
VSS
Thermistor
U-phase current sensing
V-phase current sensing
W-phase current sensing
Signal
for short-circuit protection
Figure 9: Application circuit
Switching Times Definition
LINx
2.1V
0.9V
trr
toff
ton
10%
10%
iCx
90%
90%
tf
tr
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 10: Switching times definition
Datasheet
12
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Electrical characteristic
40
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
VDD=15V
TJ=25℃
35
30
25
20
VDD=15V
VDD=20V
15
TJ=25℃
TJ=25℃
10
TJ=150℃
TJ=150℃
5
0
0.0
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE(sat), Collector - Emitter voltage [V]
VCE(sat), Collector - Emitter voltage [V]
V , Emitter - Collector voltage [V]
F
Typ. Collector – Emitter saturation voltage
Typ. Collector – Emitter saturation voltage
Typ. Emitter – Collector forward voltage
4.0
1.0
240
VDC=300V
VDD=15V
VDC=300V
VDD=15V
High side @TJ=25℃
0.9
220
200
180
160
140
120
100
80
3.5
High side @TJ=150℃
0.8
Low side @TJ=25℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
3.0
Low side @TJ=150℃
0.7
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
2.5
2.0
1.5
1.0
0.5
0.0
0.6
0.5
0.4
0.3
0.2
60
40
0.1
0.0
VDC=300V
VDD=15V
20
0
0
5
10
15
Ic, Collector current [A]
20
25
30
35
40
40
40
0
0
0
5
10
15
20
25
Ic, Collector current [A]
30
35
40
40
40
0
5
10
Ic, Collector current [A]
15
20
25
30
35
40
Typ. Turn on switching energy loss
Typ. Turn off switching energy loss
Typ. Reverse recovery energy loss
800
700
600
500
400
300
200
100
0
1500
1400
1300
1200
1100
1000
900
840
810
780
750
720
690
660
630
600
570
VDC=300V
VDD=15V
VDC=300V
VDD=15V
VDC=300V
VDD=15V
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
800
700
0
5
10
15
Ic, Collector current [A]
20
25
30
35
5
10
15
20
25
Ic, Collector current [A]
30
35
0
5
10
Ic, Collector current [A]
15
20
25
30
35
40
Typ. Turn on propagation delay time
Typ. Turn on switching time
Typ. Turn off propagation delay time
450
400
350
300
250
200
150
100
50
600
550
500
450
400
350
300
250
200
150
100
50
10
1
VDC=300V
VDD=15V
VDC=300V
VDD=15V
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
0.1
D : duty ratio
D=50%
D=20%
0.01
1E-3
1E-4
D=10%
D=5%
D=2%
Single pulse
0
0
5
10
Ic, Collector current [A]
15
20
25
30
35
5
10
15
20
Ic, Collector current [A]
25
30
35
1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1
, Pulse width [sec.]
1
10
100
t
P
Typ. Turn off switching time
Typ. Reverse recovery time
IGBT transient thermal resistance at all six
IGBTs operation
Datasheet
13
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Package Outline
Datasheet
14
Ver. 1.0, 2015-07-01
CIPOS™ IKCM15L60GD
Revision History
Major changes since the last revision
Page or Reference
Description of change
Datasheet
15
Ver. 1.0, 2015-07-01
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™,
DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™,
HybridPACK™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™
of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth
SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of
Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission
Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™
of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of
Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of
Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design
Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.
Last Trademarks Update 2014-07-17
IMPORTANT NOTICE
For further information on the product, technology, delivery terms
and conditions and prices please contact your nearest Infineon
Technologies office (www.infineon.com).
www.Infineon.com
The information given in this document shall in no event be
regarded as
a guarantee of conditions or characteristics
Edition 2014-06-01
(“Beschaffenheitsgarantie”). With respect to any examples, hints
or any typical values stated herein and/or any information
regarding the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of
intellectual property rights of any third party.
Published by
WARNINGS
Infineon Technologies AG
81726 München, Germany
Due to technical requirements products may contain dangerous
substances. For information on the types in question please
contact your nearest Infineon Technologies office.
© Infineon Technologies AG 2015.
All Rights Reserved.
Except as otherwise explicitly approved by Infineon Technologies
In addition, any information given in this document is subject to
customer’s compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards
concerning customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
in a written document signed by authorized representatives of
Infineon Technologies, Infineon Technologies’ products may not be
used in any applications where a failure of the product or any
consequences of the use thereof can reasonably be expected to
result in personal injury.
The data contained in this document is exclusively intended for
technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for
the intended application and the completeness of the product
information given in this document with respect to such
application.
Document reference
Ifx000000000001
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