IKD15N60RC2 [INFINEON]
IGBT RC Drives 2;
| 型号： | IKD15N60RC2 |
| 厂家： | 
Infineon |
| 描述： | IGBT RC Drives 2 双极性晶体管 |
| 文件： | 总16页 (文件大小：1428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
CostꢀeffectiveꢀmonolithicallyꢀintegratedꢀIGBTꢀwithꢀDiode
ꢀ
C
E
Features:
TRENCHSTOPTMꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V
applicationsꢀoffering
•ꢀVeryꢀtightꢀparameterꢀdistribution
•ꢀOperatingꢀrangeꢀupꢀtoꢀ20kHz
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ3µs
G
•ꢀHumidityꢀrobustꢀdesign
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/rc-d2
PotentialꢀApplications:
•ꢀMajorꢀHomeꢀAppliances
ꢀꢀꢀ-ꢀAirꢀConditioning
ꢀꢀꢀ-ꢀRefrigerators
G
•ꢀDrives
ꢀꢀꢀ-ꢀGPDꢀ(GeneralꢀPurposeꢀDrives)
E
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
2V 175°C
Marking
Package
IKD15N60RC2
600V
15A
K15DRC2
PG-TO252-3
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
28.0
18.6
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
45.0
45.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
12.5
6.6
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
45.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±25
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
3
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
115.4
57.7
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,1)
junction - case
Diode thermal resistance,2)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
1.30 K/W
5.00 K/W
75 K/W
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
50 K/W
junction - ambient
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet
3
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Collector-emitter saturation voltage VCEsat
-
-
2.00 2.30
2.40
V
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.90 2.20
V
V
1.95
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.16mA,ꢀVCEꢀ=ꢀVGE
4.3
5.0
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
25
2500
µA
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ15.0A
-
-
-
100
-
nA
S
6.0
Integrated gate resistor
rG
none
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
575
28
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
nC
Reverse transfer capacitance
21
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
-
72.0
-
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
18
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ49.0Ω,ꢀRG(off)ꢀ=ꢀ49.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
374
20
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.57
0.35
0.92
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
129
0.50
11.2
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ787A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-93
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
19
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ49.0Ω,ꢀRG(off)ꢀ=ꢀ49.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
393
21
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.77
0.39
1.16
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
199
1.04
15.3
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ761A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-97
-
A/µs
Datasheet
5
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
120
100
80
60
40
20
0
30
25
20
15
10
5
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
45
45
VGE=20V
VGE=20V
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
7V
7V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Datasheet
6
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
45
40
35
30
25
20
15
10
5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj=25°C
Tj=175°C
IC=7,5A
IC=15A
IC=30A
0
2
4
6
8
10
12
14
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀRG=49Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1000
100
10
7
6
5
4
3
2
1
0
typ.
td(off)
tf
td(on)
tr
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=15A,ꢀRG=49Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0.16mA)
3.0
1.6
Eoff
Eon
Ets
Eoff
Eon
Ets
1.4
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀRG=49Ω,ꢀDynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=15A,ꢀRG=49Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,
IC=15A,ꢀRG=49Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
VCCꢀ=ꢀ120V
VCCꢀ=ꢀ480V
Cies
Coes
Cres
14
12
10
8
1000
100
6
4
2
0
10
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=15A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
160
1
140
D=0.5
0.2
120
0.1
0.05
0.1
0.02
100
0.01
single pulse
80
0.01
60
40
i:
1
2
3
4
5
ri[K/W]: 0.25012 0.88582 0.118768 0.0115115 7.0E-4
τi[s]:
2.0E-4
9.2E-4
5.0E-3
0.1707067 4.115216
20
0.001
1E-6
12
13
14
15
16
17
18
1E-5
1E-4
0.001
0.01
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(VCE≤400V,ꢀTvj=25°C)
Figure 18. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
10
300
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
250
200
150
100
50
D=0.5
0.2
0.1
1
0.05
0.02
0.01
single pulse
0.1
i:
1
2
3
4
5
ri[K/W]: 0.30342 3.7726 1.04741 0.052065
1.3E-3
τi[s]:
6.3E-5
3.5E-4 2.0E-3
0.06101217 4.420898
0.01
1E-6
0
1E-5
1E-4
0.001
0.01
500 750 1000 1250 1500 1750 2000 2250 2500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
Datasheet
10
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
30
25
20
15
10
5
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
0
500 750 1000 1250 1500 1750 2000 2250 2500
500 750 1000 1250 1500 1750 2000 2250 2500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
50
Tj=25°C, IF = 15A
Tj=25°C
Tj=175°C, IF = 15A
Tj=175°C
-50
45
-100
-150
-200
-250
-300
-350
-400
-450
40
35
30
25
20
15
10
5
-500
0
500 750 1000 1250 1500 1750 2000 2250 2500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
Datasheet
11
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
3.5
IF=7,5A
IF=15A
IF=30A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
Package Drawing PG-TO252-3
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
0
A
A1
b
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
L
1.78
1.27
1.02
REVISION
L3
L4
06
Datasheet
13
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
RevisionꢀHistory
IKD15N60RC2
Revision:ꢀ2020-09-28,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2020-09-28 Final data sheet
Datasheet
15
Vꢀ2.1
2020-09-28
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