IKN04N60RC2 [INFINEON]
IGBT RC Drives 2;
| 型号： | IKN04N60RC2 |
| 厂家： | 
Infineon |
| 描述： | IGBT RC Drives 2 双极性晶体管 |
| 文件： | 总17页 (文件大小：1256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKN04N60RC2
600 V Reverse Conducting Drive 2
600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode
Features
• VCE = 600 V
• IC = 4 A
• Very tight parameter distribution
• Operating range of 1 to 20 kHz
• Maximum junction temperature 150°C
• Short circuit capability of 3 µs
• Humidity robust design
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/rc-d2
Potential applications
• Ceiling fan
• Countertop appliances - mixing
• Kitchen hood
• Refrigerators
• Residential aircon indoor unit
• Washing machines
• General purpose drives (GPD)
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKN04N60RC2
PG-SOT223-3
K4DRC2
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
1
2
3
4
5
6
Datasheet
2
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
150
Storage temperature
Soldering temperature
Tstg
-55
°C
°C
Tsold
wave soldering / reflow soldering (MSL1
according to JEDEC J-STA-020)
260
Thermal resistance,
min.footprint junction-
ambient
Thermal resistance, 6 cm2
Cu on PCB junction to
ambient
Rth(j-a)
160
75
K/W
K/W
Rth(j-a)
IGBT thermal resistance,
junction-case1)
Rth(j-c)
Rth(j-c)
18.4
26.3
K/W
K/W
Diode thermal resistance,
junction-case1)
1)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
VCE Tvj ≥ 25 °C
Parameter
Values
600
7.5
Unit
Collector-emitter voltage
V
A
DC collector current,
IC
Tc = 25 °C
1)
limited by Tvjmax
Tc = 100 °C
4.1
Pulsed collector current, tp
limited by Tvjmax
ICpulse
12
A
A
Turn-off safe operating
area
VCE ≤ 600 V, tp = 1 µs, Tvj ≤ 150 °C
tp ≤ 10 µs, D < 0.01
12
Gate-emitter voltage
VGE
VGE
20
30
V
V
Transient gate-emitter
voltage
Short-circuit withstand
time
tSC
VCC ≤ 400 V, VGE = 15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 150 °C
3
µs
W
Power dissipation
Ptot
Tc = 25 °C
6.8
2.7
Tc = 100 °C
1)
DPAK equivalent
Datasheet
3
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
2 IGBT
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
2
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 4 A, VGE = 15 V
Tvj = 25 °C
2.3
V
Tvj = 150 °C
2.3
Gate-emitter threshold
voltage
VGEth
ICES
IC = 45 µA, VCE = VGE
VCE = 600 V, VGE=0 V
4.3
5
5.7
V
Zero gate-voltage collector
current
Tvj = 25 °C
25
µA
Tvj = 150 °C
2500
100
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = 20 V
IC = 4 A, VCE = 20 V
nA
Transconductance
Input capacitance
Output capacitance
gfs
Cies
Coes
Cres
2
180
10
7
S
VCE = 25 V, VGE=0 V, f = 1000 kHz
VCE = 25 V, VGE=0 V, f = 1000 kHz
VCE = 25 V, VGE=0 V, f = 1000 kHz
pF
pF
pF
Reverse transfer
capacitance
Gate charge
QG
IC = 4 A, VCC = 480 V, VGE = 15 V
24
8
nC
ns
Turn-on delay time
td(on)
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
RGon = 49 Ω, RGoff = 49 Ω,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
Tvj = 150 °C,
8
Rise time (inductive load)
Turn-off delay time
Fall time (inductive load)
Turn-on energy
tr
td(off)
tf
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
10
10
ns
ns
ns
µJ
µJ
µJ
RGon = 49 Ω, RGoff = 49 Ω,
Tvj = 150 °C,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
126
137
RGon = 49 Ω, RGoff = 49 Ω,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
Tvj = 150 °C,
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
24
26
RGon = 49 Ω, RGoff = 49 Ω,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
Tvj = 150 °C,
Eon
Eoff
Ets
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
95
RGon = 49 Ω, RGoff = 49 Ω,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
Tvj = 150 °C,
127
Turn-off energy
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
62
82
RGon = 49 Ω, RGoff = 49 Ω,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
Tvj = 150 °C,
Total switching energy
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, IC = 4 A
157
209
RGon = 49 Ω, RGoff = 49 Ω,
Lσ = 30 nH, Cσ = 32 pF
IC = 4 A
Tvj = 150 °C,
(table continues...)
Datasheet
4
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
3 Diode
Table 3
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
Unit
Min.
Max.
Operating junction
temperature
Tvj
-40
150
°C
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj ≥ 25 °C
600
V
Diode forward current,
IF
Tc = 25 °C
4.9
2.3
12
A
A
1)
limited by Tvjmax
Tc = 100 °C
Diode pulsed current, tp
limited by Tvjmax
IFpulse
1)
DPAK equivalent
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.85
1.9
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 4 A
Tvj = 25 °C
2.2
Tvj = 150 °C
Diode reverse recovery
time
trr
Qrr
Irrm
VR = 400 V
Tvj = 25 °C, IF = 4 A,
-diF/dt = 483 A/µs
39
ns
Tvj = 150 °C,
IF = 4 A,
-diF/dt = 500 A/µs
100
Diode reverse recovery
charge
VR = 400 V
VR = 400 V
Tvj = 25 °C, IF = 4 A,
-diF/dt = 483 A/µs
0.097
0.259
µC
A
Tvj = 150 °C,
IF = 4 A,
-diF/dt = 500 A/µs
Diode peak reverse
recovery current
Tvj = 25 °C, IF = 4 A,
-diF/dt = 483 A/µs
4.7
5.8
Tvj = 150 °C,
IF = 4 A,
-diF/dt = 500 A/µs
(table continues...)
Datasheet
5
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
3 Diode
Table 5
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
174
Unit
Min.
Max.
Diode peak rate of fall of
reverse recovery current
dirr/dt VR = 400 V
Tvj = 25 °C, IF = 4 A,
-diF/dt = 483 A/µs
A/µs
Tvj = 150 °C,
IF = 4 A,
-diF/dt = 500 A/µs
67.4
Operating junction
temperature
Tvj
-40
150
°C
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Datasheet
6
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
4
Characteristics diagrams
Power dissipation as a function of heatsink
Collector current as a function of heatsink
temperature
IC = f(Tc)
temperature
Ptot = f(Tc)
Tvj ≤ 150 °C
Tvj ≤ 150 °C, VGE ≥ 15 V
7
6
5
4
3
2
1
7.5
6.0
4.5
3.0
1.5
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
Typical output characteristic
IC = f(VCE
Typical output characteristic
IC = f(VCE
)
)
Tvj = 25 °C
Tvj = 150 °C
12
12
10
8
10
8
6
6
4
4
2
2
0
0
0
0
1
2
3
4
5
1
2
3
4
5
Datasheet
7
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
Typical transfer characteristic
Typical collector-emitter saturation voltage as a
function of junction temperature
VCEsat = f(Tvj)
IC = f(VGE
)
VCE = 20 V
VGE = 15 V
16
14
12
10
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
4
2
0
25
50
75
100
125
150
3.0
4.5
6.0
7.5
9.0 10.5 12.0 13.5 15.0
Gate-emitter threshold voltage as a function of
junction temperature
Typical switching times as a function of collector
current
VGEth = f(Tvj)
t = f(IC)
IC = 45 µA
VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω
7
6
5
4
3
2
1
0
1000
100
10
1
25
50
75
100
125
150
2
3
4
5
6
7
8
Datasheet
8
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
Typical switching times as a function of gate resistor Typical switching times as a function of junction
temperature
t = f(Tvj)
t = f(RG)
IC = 4 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V
IC = 4 A, VCC = 400 V, VGE = 0/15 V, RG = 49 Ω
1000
100
10
1000
100
10
1
1
25
50
75
100
125
150
0
200
400
600
800
1000
Typical switching energy losses as a function of
collector current
Typical switching energy losses as a function of gate
resistor
E = f(IC)
E = f(RG)
VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω
IC = 4 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V
500
400
300
200
100
0
1600
1400
1200
1000
800
600
400
200
0
1
2
3
4
5
6
7
8
0
200
400
600
800
1000
Datasheet
9
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
Typical switching energy losses as a function of
junction temperature
Typical switching energy losses as a function of
collector emitter voltage
E = f(Tvj)
E = f(VCE)
IC = 4 A, VCC = 400 V, VGE = 0/15 V, RG = 49 Ω
IC = 4 A, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω
300
250
200
150
100
50
300
250
200
150
100
50
0
0
25
50
75
100
125
150
200
250
300
350
400
450
500
Typical gate charge
VGE = f(QG)
IC = 4 A
Typical capacitance as a function of collector-emitter
voltage
C = f(VCE
)
f = 1000 kHz, VGE = 0 V
15
12
9
1000
100
10
1
6
3
0
0
4
8
12
16
20
24
0
5
10
15
20
25
30
Datasheet
10
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
Typical short circuit collector current as a function of IGBT transient thermal impedance as a function of
gate-emitter voltage
IC(SC) = f(VGE
Tvj ≤ 150 °C, VCC ≤ 400 V
pulse width
Zth(j-c) = f(tp)
D = tp/T
)
40
100
35
30
25
20
15
10
5
10
1
0.1
0.01
0
1E-6 1E-5 0.0001 0.001 0.01
0.1
1
10
12
13
14
15
16
17
18
Diode transient thermal impedance as a function of
pulse width
Typical diode forward current as a function of forward
voltage
Zth(j-c) = f(tp)
IF = f(VF)
D = tp/T
12
100
10
10
8
1
6
0.1
4
0.01
0.001
2
0
1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Datasheet
11
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature
Typical reverse recovery time as a function of diode
current slope
VF = f(Tvj)
trr = f(diF/dt)
VR = 400 V, IF = 4 A
3.0
320
280
240
200
160
120
80
2.5
2.0
1.5
1.0
0.5
0.0
40
0
25
50
75
100
125
150
0
200
400
600
800 1000 1200 1400
Typical reverse recovery charge as a function of diode Typical reverse recovery current as a function of
current slope
Qrr = f(diF/dt)
diode current slope
Irr = f(diF/dt)
VR = 400 V, IF = 4 A
VR = 400 V, IF = 4 A
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600
800 1000 1200 1400
0
200
400
600
800
1000 1200 1400
Datasheet
12
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
4 Characteristics diagrams
Typical diode peak rate of fall of reverse recovery
current as a function of diode current slope
dirr/dt = f(diF/dt)
VR = 400 V, IF = 4 A
0
-50
-100
-150
-200
-250
-300
-350
-400
0
200
400
600
800 1000 1200 1400
Datasheet
13
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
5 Package outlines
5
Package outlines
PG-SOT223-3
DOCUMENT NO.
Z8B00180553
0
SCALE
MILLIMETERS
MAX
INCHES
DIM
MIN
1.52
-
MIN
0.060
-
MAX
2.5
A
A1
A2
b
1.80
0.10
1.70
0.80
3.10
0.32
6.70
7.30
3.70
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0
2.5
1,50
0.059
0.024
0.116
0.009
0.248
0.264
0.130
5mm
0.60
2.95
0.24
6.30
6.70
3.30
b2
c
EUROPEAN PROJECTION
D
E
E1
e
2.3 BASIC
4.6 BASIC
0.091 BASIC
0.181 BASIC
e1
L
ISSUE DATE
24-02-2016
0.75
1.10
0.030
0.043
N
3
3
REVISION
O
ꢀ
ꢁꢀ
ꢀ
ꢁꢀ
01
Figure 1
Datasheet
14
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
15
Revision 1.10
2022-09-21
IKN04N60RC2
600 V Reverse Conducting Drive 2
Revision history
Revision history
Document revision
Date of release Description of changes
1.00
1.01
1.10
2021-09-28
2021-10-15
2022-09-21
Final datasheet
Change of Potential Applications
Add of wave soldering conditions
Datasheet
16
Revision 1.10
2022-09-21
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-09-21
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Warnings
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-ABB482-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
相关型号：
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