IKQ75N120CS6 [INFINEON]
TRENCHSTOP™ IGBT6;
| 型号： | IKQ75N120CS6 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT6 双极性晶体管 |
| 文件： | 总16页 (文件大小：2072K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
HighꢀspeedꢀsoftꢀswitchingꢀTRENCHSTOPTMꢀꢀIGBTꢀ6ꢀinꢀTrenchꢀandꢀFieldstop
technologyꢀcopackedꢀwithꢀsoftꢀandꢀfastꢀrecoveryꢀanti-parallelꢀdiode
ꢀ
C
Features:
1200VꢀTRENCHSTOPTMꢀIGBT6ꢀtechnologyꢀoffering:
•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies
•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀVCEsat
G
•ꢀLowꢀEMI
E
•ꢀLowꢀGateꢀChargeꢀQg
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀIndustrialꢀUPS
•ꢀCharger
•ꢀEnergyꢀstorage
•ꢀThree-levelꢀSolarꢀStringꢀInverter
•ꢀWelding
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.85V 175°C
Marking
Package
PG-TO247-3-46
IKQ75N120CS6
1200V
75A
K75MCS6
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
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IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
150.0
75.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
150.0
75.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ0.5µs,ꢀDꢀ<ꢀ0.001)
±20
25
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ500V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
W
3
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
880.0
440.0
Ptot
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.17 K/W
0.41 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Datasheet
3
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.85 2.15
Collector-emitter saturation voltage VCEsat
V
2.15
2.25
-
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
2.10 2.20
V
V
2.15
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ3.50mA,ꢀVCEꢀ=ꢀVGE
5.1
5.7
6.3
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
1600 µA
-
3500
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
600
-
nA
S
60.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4900
360
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
225
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
530.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
34
44
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ4.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
300
31
ns
ns
Turn-on energy
Eon
Eoff
Ets
5.15
2.95
8.10
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
440
4.70
27.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ820A/µs,
Lσꢀ=ꢀ70nH,
Cσꢀ=ꢀ67pF
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-95
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
31
45
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ4.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
370
58
ns
ns
Turn-on energy
Eon
Eoff
Ets
7.35
5.30
12.65
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
765
12.50
45.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ1020A/µs,
Lσꢀ=ꢀ70nH,
Cσꢀ=ꢀ67pF
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-115
-
A/µs
Datasheet
5
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
300
VGE = 20V
17V
100
10
1
250
200
150
100
50
15V
not for linear use
13V
11V
9V
7V
0.1
0
1
10
100
1000
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTvj≤175°C;ꢀVGE=15V,ꢀpulseꢀwidth
Figure 2. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
limitedꢀbyꢀTvjmax
)
300
250
200
150
100
50
300
VGE = 20V
17V
Tvj = 25°C
Tvj = 175°C
250
200
150
100
50
15V
13V
11V
9V
7V
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 4. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Datasheet
6
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
3.5
3.0
2.5
2.0
1.5
1.0
1000
IC = 37.5A
IC = 75A
IC = 150A
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 5. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 6. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
1000
100
10
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀIC=75A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,
IC=75A,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigure
E)
Datasheet
7
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
35
30
25
20
15
10
5
Eoff
Eon
Ets
typ.
min.
max.
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 9. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Figure 10. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
(IC=3.5mA)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀRG=4Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
20
14
12
18
Eoff
Eon
Ets
Eoff
Eon
Ets
16
10
8
14
12
10
8
6
4
6
4
2
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀIC=75A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,
IC=75A,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
18
16
14
12
10
8
1600
Tvj = 25°C
Tvj = 175°C
1400
1200
1000
800
Eoff
Eon
Ets
600
6
400
4
2
200
400 450 500 550 600 650 700 750 800
0
2
4
6
8
10
12
14
16
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,
IC=75A,ꢀRG=4Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀdiodeꢀcurrentꢀslopeꢀasꢀaꢀfunctionꢀof
gateꢀresistor
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=75A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
16
VCCꢀ=ꢀ240V
VCCꢀ=ꢀ960V
Cies
Coes
Cres
1E+4
14
12
10
8
1000
6
100
4
2
0
10
0
100
200
300
400
500
600
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=75A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
600
550
500
450
400
350
300
250
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
12
13
14
15
12.0
12.5
13.0
13.5
14.0
14.5
15.0
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤500V,ꢀTvj≤175°C)
(VCE≤500V,ꢀstartꢀatꢀTvj≤175°C)
1
0.1
D = 0.5
0.2
D = 0.5
0.1
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.01
0.01
single pulse
single pulse
0.001
0.001
i:
1
2
3
4
5
6
i:
1
2
3
4
5
ri[K/W]: 7.4E-4 0.031224 0.033227 0.108076 5.3E-3
1.3E-3
ri[K/W]: 0.08116 0.11422 0.20483 9.7E-3
1.8E-3
τi[s]:
3.4E-5 3.4E-4
2.9E-3
0.01786 0.227615 3.143017
τi[s]:
3.2E-4
3.1E-3
0.0161 0.22001 2.7875
1E-4
1E-6
1E-4
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
Datasheet
10
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
900
800
700
600
500
400
300
14
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
12
10
8
6
4
400
600
800
1000
1200
1400
400
600
800
1000
1200
1400
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
(VR=600V)
50
40
30
20
0
-20
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
-40
-60
-80
-100
-120
-140
-160
400
600
800
1000
1200
1400
400
600
800
1000
1200
1400
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=600V)
Datasheet
11
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
7
6
5
4
3
2
1
0
150
Tj=25°C, IF = 75A
Tj=175°C, IF = 75A
Tvj = 25°C
Tvj = 175°C
120
90
60
30
0
400
600
800
1000
1200
1400
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25. Typicalꢀreverseꢀenergyꢀlossesꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
ofꢀforwardꢀvoltage
(VR=600V)
3.5
3.0
2.5
2.0
1.5
1.0
IF = 37.5A
IF = 75A
IF = 150A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Package Drawing PG-TO247-3-46
MILLIMETERS
DIM
INCHES
MIN
4.90
2.31
1.90
1.16
1.96
1.96
MAX
5.10
2.51
2.10
1.26
2.25
2.06
MIN
MAX
0.201
0.099
0.083
0.050
0.089
0.081
A
0.193
0.091
0.075
0.046
0.077
0.077
DOCUMENT NO.
Z8B00174295
A1
A2
b
0
SCALE
b1
b2
5
0
5
c
D
0.59
20.90
16.25
1.05
0.66
21.10
16.85
1.35
0.023
0.823
0.640
0.041
0.023
0.618
0.516
0.053
0.026
0.831
0.663
0.053
0.031
0.626
0.531
0.061
7.5mm
D1
D2
D3
E
EUROPEAN PROJECTION
0.58
0.78
15.70
13.10
1.35
15.90
13.50
1.55
E1
E3
e
5.44 (BSC)
3
0.214 (BSC)
3
ISSUE DATE
13-08-2014
N
L
19.80
-
20.10
4.30
2.10
0.780
-
0.791
0.169
0.083
REVISION
L1
R
01
1.90
0.075
Datasheet
13
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.2
2018-08-07
IKQ75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
RevisionꢀHistory
IKQ75N120CS6
Revision:ꢀ2018-08-07,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2018-05-07 Final data sheet
2018-08-07 Fig.5 and Fig.27 legend correction
Datasheet
15
Vꢀ2.2
2018-08-07
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