IKW15N120BH6 [INFINEON]
TRENCHSTOP™ IGBT6;
| 型号： | IKW15N120BH6 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT6 双极性晶体管 |
| 文件： | 总16页 (文件大小：2139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
HighꢀspeedꢀsoftꢀswitchingꢀTRENCHSTOPTMꢀꢀIGBTꢀ6ꢀinꢀTrenchꢀandꢀFieldstop
technologyꢀcopackedꢀwithꢀsoftꢀandꢀfastꢀrecoveryꢀanti-parallelꢀdiode
ꢀ
C
Features:
1200VꢀTRENCHSTOPTMꢀIGBT6ꢀtechnologyꢀoffering:
•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies
•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀVCEsat
G
•ꢀLowꢀEMI
E
•ꢀLowꢀGateꢀChargeꢀQg
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀIndustrialꢀUPS
•ꢀCharger
•ꢀEnergyꢀstorage
•ꢀThree-levelꢀSolarꢀStringꢀInverter
•ꢀWelding
G
C
E
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.9V 175°C
Marking
Package
PG-TO247-3
IKW15N120BH6
1200V
15A
K15MBH6
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
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IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
30.0
15.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
60.0
60.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
15.0
7.5
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
60.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ0.5µs,ꢀDꢀ<ꢀ0.001)
±20
25
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ500V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
W
3
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
200.0
100.0
Ptot
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.74 K/W
2.40 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Datasheet
3
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.90 2.30
Collector-emitter saturation voltage VCEsat
V
V
2.20
2.35
-
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ7.5A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
2.00 2.40
2.00
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
2.65 3.20
V
V
2.75
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE
5.1
5.7
6.3
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
250
-
µA
450
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ15.0A
-
-
-
600
-
nA
S
10.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
860
60
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
40
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
92.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
29
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ22.0Ω,ꢀRG(off)ꢀ=ꢀ22.0Ω,
Lσꢀ=ꢀ95nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
240
25
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.70
0.55
1.25
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
340
0.83
8.3
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ500A/µs,
Lσꢀ=ꢀ95nH,
Cσꢀ=ꢀ67pF
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-55
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
17
29
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ22.0Ω,ꢀRG(off)ꢀ=ꢀ22.0Ω,
Lσꢀ=ꢀ95nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
310
63
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.95
1.10
2.05
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
540
1.75
11.3
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ500A/µs,
Lσꢀ=ꢀ95nH,
Cσꢀ=ꢀ67pF
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-42
-
A/µs
Datasheet
5
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
100
10
1
60
VGE=20V
17V
15V
13V
11V
9V
not for linear use
50
40
30
20
10
0
7V
1
10
100
1000
0
1
2
3
4
5
6
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTvj≤175°C;ꢀVGE=15V,ꢀpulseꢀwidth
Figure 2. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
limitedꢀbyꢀTvjmax
)
60
50
40
30
20
10
0
60
VGE=20V
Tvj=25°C
Tvj=175°C
17V
15V
13V
11V
9V
50
40
30
20
10
0
7V
0
1
2
3
4
5
6
4
6
8
10
12
14
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 4. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Datasheet
6
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
IC=7.5A
IC=15A
IC=30A
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 5. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 6. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀRG=22Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1000
100
10
0
20
40
60
80
100
120
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,
IC=15A,ꢀRG=22Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
5.0
typ.
min.
max.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 9. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Figure 10. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
(IC=0.5mA)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀRG=22Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
4.5
4.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
0
20
40
60
80
100
120
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,
IC=15A,ꢀRG=22Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
3.0
2.5
2.0
1.5
1.0
0.5
0.0
800
Tvj=25°C
Tvj=175°C
700
600
500
400
300
200
100
0
Eoff
Eon
Ets
400 450 500 550 600 650 700 750 800
0
20
40
60
80
100
120
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,
IC=15A,ꢀRG=22Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀdiodeꢀcurrentꢀslopeꢀasꢀaꢀfunctionꢀof
gateꢀresistor
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=40A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
16
1E+4
VCCꢀ=ꢀ240V
VCCꢀ=ꢀ960V
Cies
Coes
Cres
14
12
10
8
1000
100
10
6
4
2
0
0
20
40
60
80
100
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=15A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
90
80
70
60
50
40
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
12.0
12.5
13.0
13.5
14.0
14.5
15.0
12.0
12.5
13.0
13.5
14.0
14.5
15.0
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤500V,ꢀTvj≤150°C)
(VCE≤500V,ꢀstartꢀatꢀTvj≤150°C)
1
1
0.1
D=0.5
D=0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.01
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.001
1E-4
0.01
i:
ri[K/W]: 0.1688123 0.2736341 0.2844153 0.01358942 2.1E-3
τi[s]: 3.1E-4 2.9E-3 0.01523587 0.2101353 2.475492
1
2
3
4
5
i:
1
2
3
4
5
ri[K/W]: 0.01879075 1.08659 0.9288417 0.3514893 0.02098241
τi[s]: 4.2E-5 3.9E-4 2.7E-3 0.01706908 0.1950848
1E-5
0.001
1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
Datasheet
10
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
900
800
700
600
500
400
300
200
2.0
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
200
300
400
500
600
700
800
100
200
300
400
500
600
700
800
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
(VR=600V)
14
12
10
8
0
-20
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
-40
-60
6
-80
4
-100
-120
2
100
200
300
400
500
600
700
800
100
200
300
400
500
600
700
800
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=600V)
Datasheet
11
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
60
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tvj=25°C
Tvj=175°C
50
40
30
20
10
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25. Typicalꢀreverseꢀenergyꢀlossesꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
ofꢀforwardꢀvoltage
(VR=600V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IF=7.5A
IF=15A
IF=30A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Package Drawing PG-TO247-3
Datasheet
13
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2018-05-07
IKW15N120BH6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
RevisionꢀHistory
IKW15N120BH6
Revision:ꢀ2018-05-07,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2018-05-07 Final data sheet
Datasheet
15
Vꢀ2.1
2018-05-07
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