IKW40N120CS6_技术文档

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

HighꢀspeedꢀsoftꢀswitchingꢀTRENCHSTOP^TMꢀꢀIGBTꢀ6ꢀinꢀTrenchꢀandꢀFieldstop

technologyꢀcopackedꢀwithꢀsoftꢀandꢀfastꢀrecoveryꢀanti-parallelꢀdiode

ꢀ

C

Features:

1200VꢀTRENCHSTOP^TMꢀIGBT6ꢀtechnologyꢀoffering:

•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies

•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature

coefficientꢀinꢀV_CEsat

G

•ꢀLowꢀEMI

E

•ꢀLowꢀGateꢀChargeꢀQ_g

•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:

http://www.infineon.com/igbt/

Applications:

•ꢀIndustrialꢀUPS

•ꢀCharger

•ꢀEnergyꢀstorage

•ꢀThree-levelꢀSolarꢀStringꢀInverter

•ꢀWelding

G

C

E

ProductꢀValidation:

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests

ofꢀJEDEC47/20/22

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

1.85V 175°C

Marking

Package

PG-TO247-3

IKW40N120CS6

1200V

40A

K40MCS6

Datasheet

www.infineon.com

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.1

2018-05-07

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

MaximumꢀRatings

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

1200

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ100°C

I_C

80.0

40.0

A

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Cpuls

160.0

A

TurnꢀoffꢀsafeꢀoperatingꢀareaꢀV_CEꢀ≤ꢀ1200V,ꢀT_vjꢀ≤ꢀ175°C

-

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ100°C

I_F

80.0

40.0

A

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

V_GE

160.0

A

V

Gate-emitter voltage

TransientꢀGate-emitterꢀvoltageꢀ(t_pꢀ≤ꢀ0.5µs,ꢀDꢀ<ꢀ0.001)

±20

25

Short circuit withstand time

V_GEꢀ=ꢀ15.0V,ꢀV_CCꢀ≤ꢀ500V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

T_vjꢀ=ꢀ150°C

t_SC

µs

W

3

PowerꢀdissipationꢀT_cꢀ=ꢀ25°C

PowerꢀdissipationꢀT_cꢀ=ꢀ100°C

500.0

250.0

P_tot

Operating junction temperature

Storage temperature

T_vj

-40...+175

-55...+150

°C

T_stg

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

°C

260

0.6

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

Nm

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,

junction - case

R_th(j-c)

R_th(j-a)

-

0.30 K/W

0.78 K/W

40 K/W

Diode thermal resistance,

junction - case

Thermal resistance

junction - ambient

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ40.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ125°C

T_vjꢀ=ꢀ175°C

-

1.85 2.15

Collector-emitter saturation voltage V_CEsat

V

2.15

2.25

-

V_GEꢀ=ꢀ0V,ꢀI_Fꢀ=ꢀ40.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Diode forward voltage

V_F

-

2.20 2.55

V

2.25

-

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ1.90mA,ꢀV_CEꢀ=ꢀV_GE

5.1

5.7

6.3

V_CEꢀ=ꢀ1200V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Zero gate voltage collector current I_CES

-

850

-

µA

1600

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ40.0A

-

600

-

nA

S

32.0

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Input capacitance

C_ies

-

2700

185

-

Output capacitance

C_oes

C_res

V_CEꢀ=ꢀ25V,ꢀV_GEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

pF

Reverse transfer capacitance

120

V_CCꢀ=ꢀ960V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ15V

Gate charge

Q_G

L_E

-

285.0

13.0

-

nC

nH

Internal emitter inductance

measured 5mm (0.197 in.) from

case

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

27

39

-

ns

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ600V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ9.0Ω,ꢀR_G(off)ꢀ=ꢀ9.0Ω,

Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

315

27

ns

Turn-on energy

E_on

E_off

E_ts

2.55

1.55

4.10

mJ

Turn-off energy

Total switching energy

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

400

2.65

18.0

-

ns

µC

A

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ600V,

I_Fꢀ=ꢀ40.0A,

di_F/dtꢀ=ꢀ700A/µs,

Lσꢀ=ꢀ70nH,

Cσꢀ=ꢀ67pF

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-65

-

A/µs

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ175°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

27

38

-

ns

T_vjꢀ=ꢀ175°C,

V_CCꢀ=ꢀ600V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ9.0Ω,ꢀR_G(off)ꢀ=ꢀ9.0Ω,

Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

390

55

ns

Turn-on energy

E_on

E_off

E_ts

3.50

2.95

6.45

mJ

Turn-off energy

Total switching energy

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ175°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

720

6.40

27.0

-

ns

µC

A

T_vjꢀ=ꢀ175°C,

V_Rꢀ=ꢀ600V,

I_Fꢀ=ꢀ40.0A,

di_F/dtꢀ=ꢀ800A/µs,

Lσꢀ=ꢀ70nH,

Cσꢀ=ꢀ67pF

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-70

-

A/µs

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

160

V_GE=20V

17V

15V

13V

11V

9V

not for linear use

140

120

100

80

100

10

1

7V

60

40

20

0.1

0

1

10

100

1000

0

1

2

3

4

5

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea

(D=0,ꢀT_vj≤175°C;ꢀV_GE=15V,ꢀpulseꢀwidth

Figure 2. Typicalꢀoutputꢀcharacteristic

(T_vj=25°C)

limitedꢀbyꢀT_vjmax

)

160

140

120

100

80

160

V_GE=20V

T_vj= 25°C

T_vj= 175°C

17V

15V

13V

11V

9V

140

120

100

80

7V

60

40

20

0

1

2

3

4

5

4

6

8

10

12

14

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

Figure 3. Typicalꢀoutputꢀcharacteristic

(T_vj=175°C)

Figure 4. Typicalꢀtransferꢀcharacteristic

(V_CE=20V)

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

3.5

3.0

2.5

2.0

1.5

1.0

0.5

1000

I_C= 20A

I_C= 40A

I_C= 80A

t_d(off)

t_f

t_d(on)

t_r

100

10

1

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

Figure 5. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 6. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

aꢀfunctionꢀofꢀjunctionꢀtemperature

collectorꢀcurrent

(V_GE=15V)

(inductiveꢀload,ꢀT_vj=175°C,ꢀV_CE=600V,

V_GE=0/15V,ꢀR_G=9Ω,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

1000

100

10

t_d(off)

t_f

t_d(on)

t_r

1000

100

10

t_d(off)

t_f

t_d(on)

t_r

0

5

10

15

20

25

30

35

25

50

75

100

125

150

175

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

resistor

junctionꢀtemperature

(inductiveꢀload,ꢀT_vj=175°C,ꢀV_CE=600V,

V_GE=0/15V,ꢀI_C=40A,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

(inductiveꢀload,ꢀV_CE=600V,ꢀV_GE=0/15V,

I_C=40A,ꢀR_G=9Ω,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigure

E)

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

16

typ.

min.

max.

E_off

E_on

E_ts

14

12

10

8

6

4

2

0

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

Figure 9. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction

ofꢀjunctionꢀtemperature

Figure 10. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀcurrent

(I_C=1.9mA)

(inductiveꢀload,ꢀT_vj=175°C,ꢀV_CE=600V,

V_GE=0/15V,ꢀR_G=9Ω,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

12

7

E_off

E_on

E_ts

E_off

E_on

E_ts

6

10

8

5

4

3

2

1

0

6

4

2

0

5

10

15

20

25

30

35

25

50

75

100

125

150

175

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀgateꢀresistor

Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀjunctionꢀtemperature

(inductiveꢀload,ꢀT_vj=175°C,ꢀV_CE=600V,

V_GE=0/15V,ꢀI_C=40A,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

(inductiveꢀload,ꢀV_CE=600V,ꢀV_GE=0/15V,

I_C=40A,ꢀR_G=9Ω,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

9

8

7

6

5

4

3

2

1

1200

E_off

E_on

E_ts

Tv_j= 25°C

Tv_j= 175°C

1000

800

600

400

200

0

400 450 500 550 600 650 700 750 800

0

5

10

15

20

25

30

35

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀemitterꢀvoltage

(inductiveꢀload,ꢀT_vj=175°C,ꢀV_GE=0/15V,

I_C=40A,ꢀR_G=9Ω,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

Figure 14. Typicalꢀdiodeꢀcurrentꢀslopeꢀasꢀaꢀfunctionꢀof

gateꢀresistor

(inductiveꢀload,ꢀV_CE=600V,ꢀV_GE=0/15V,

I_C=40A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)

16

1E+4

V_CCꢀ=ꢀ240V

V_CCꢀ=ꢀ960V

C_ies

C_oes

C_res

14

12

10

8

1000

100

10

6

4

2

0

50

100

150

200

250

300

0

5

10

15

20

25

30

Q_GE,ꢀGATEꢀCHARGEꢀ[nC]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 15. Typicalꢀgateꢀcharge

(I_C=40A)

Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof

collector-emitterꢀvoltage

(V_GE=0V,ꢀf=1MHz)

Datasheet

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IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

300

275

250

225

200

175

150

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

12.0

12.5

13.0

13.5

14.0

14.5

15.0

12.0

12.5

13.0

13.5

14.0

14.5

15.0

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa

functionꢀofꢀgate-emitterꢀvoltage

Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof

gate-emitterꢀvoltage

(V_CE≤500V,ꢀT_vj≤175°C)

(V_CE≤500V,ꢀstartꢀatꢀT_vj≤175°C)

1

0.1

D = 0.5

0.2

D = 0.5

0.1

0.2

0.1

0.05

0.02

0.01

single pulse

0.001

i:

1

2

3

4

5

6

i:

1

2

3

4

5

r_i[K/W]: 9.4E-4 0.056801 0.070049 0.170338 8.0E-3

1.6E-3

r_i[K/W]: 0.17605 0.29816 0.29355 0.0141 2.2E-3

τ_i[s]:

2.5E-5 3.4E-4

3.1E-3

0.016587 0.224027 2.909819

τ_i[s]:

3.1E-4

2.8E-3

0.01518 0.20937 2.46001

1E-4

1E-6

1E-4

1E-6

1E-5

1E-4

0.001

0.01

0.1

1

1E-5

1E-4

0.001

0.01

0.1

1

t_p,ꢀPULSEꢀWIDTHꢀ[s]

Figure 19. IGBTꢀtransientꢀthermalꢀresistance

(D=t_p/T)

Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa

functionꢀofꢀpulseꢀwidth

(D=t_p/T)

Datasheet

10

Vꢀ2.1

2018-05-07

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

1000

T_vj= 25°C, I_F= 40A

T_vj= 175°C, I_F= 40A

T_vj= 25°C, I_F= 40A

T_vj= 175°C, I_F= 40A

900

800

700

600

500

400

300

7

6

5

4

3

2

200

400

600

800

1000

1200

200

400

600

800

1000

1200

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa

ofꢀdiodeꢀcurrentꢀslope

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=600V)

30

25

20

15

10

0

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

T_vj= 25°C, I_F= 40A

T_vj= 175°C, I_F= 40A

T_vj= 25°C, I_F= 40A

T_vj= 175°C, I_F= 40A

200

400

600

800

1000

1200

200

400

600

800

1000

1200

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=600V)

Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode

currentꢀslope

(V_R=600V)

Datasheet

11

Vꢀ2.1

2018-05-07

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

160

T_j=25°C, IF = 40A

T_j=175°C, IF = 40A

T_vj= 25°C

T_vj= 175°C

140

120

100

80

60

40

20

0

200

400

600

800

1000

1200

0

1

2

3

4

5

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

V_F,ꢀFORWARDꢀVOLTAGEꢀ[V]

Figure 25. Typicalꢀreverseꢀenergyꢀlossesꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction

ofꢀdiodeꢀcurrentꢀslope

ofꢀforwardꢀvoltage

(V_R=600V)

3.5

3.0

2.5

2.0

1.5

1.0

I_F= 20A

I_F= 40A

I_F= 80A

25

50

75

100

125

150

175

T_vj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction

ofꢀjunctionꢀtemperature

Datasheet

12

Vꢀ2.1

2018-05-07

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

Package Drawing PG-TO247-3

Datasheet

13

Vꢀ2.1

2018-05-07

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

Testing Conditions

V_GE(t)

I,V

90% V_GE

t_rr= t_a+ t_b

dI_F/dt

Q_rr= Q_a+ Q_b

a

b

10% V_GE

t

Q_a

Q_b

I_C(t)

dI

90% I_C

10% I_C

Figure C. Definition of diode switching

characteristics

t

V_CE(t)

t

t_d(off)

t_f

t_d(on)

t_r

Figure A.

V_GE(t)

90% V_GE

Figure D.

10% V_GE

t

I_C(t)

CC

2% I_C

t

V_CE(t)

Figure E. Dynamic test circuit

Parasitic inductance L ,

parasitic capacitor C ,

s

relief capacitor C ,

(only for ZVT switching)

r

t₂

t₄

E

=

V_CEx I_Cx dt

E

=

V_CEx I_Cx dt

off

on

2% V_CE

t₁

t₃

t

t₁

t₂

t₃

t₄

Figure B.

Datasheet

14

Vꢀ2.1

2018-05-07

IKW40N120CS6

Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries

RevisionꢀHistory

IKW40N120CS6

Revision:ꢀ2018-05-07,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.1

2018-05-07 Final data sheet

Datasheet

15

Vꢀ2.1

2018-05-07

Trademarks

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ꢀ

Publishedꢀby

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81726ꢀMünchen,ꢀGermany

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型号：	IKW40N120CS6
厂家：	Infineon
描述：	TRENCHSTOP™ IGBT6 双极性晶体管
文件：	总16页 (文件大小：1740K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IKW40N120CS6 [INFINEON]

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