IKW50N65ET7 [INFINEON]
TRENCHSTOP™ IGBT7;
| 型号： | IKW50N65ET7 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT7 双极性晶体管 |
| 文件： | 总19页 (文件大小：1652K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKW50N65ET7
Low Loss Duopack: IGBT 7
Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology
Features
• VCE = 650 V
• IC = 50 A
• Very Low VCEsat
• Low turn-off losses
• Short tail current
• Reduced EMI
• Humidity robust design
• Very sofꢀ fast recovery antiparallel diode
• Maximum junction temperature Tvjmax = 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/
Potential applications
• Servo Drives
G
C
E
• General Purpose Drives (GPD)
• Industrial UPS
• Industrial SMPS
• Solar Optimizer
• Solar String Inverter
Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of
JEDEC47/20/22
Description
Package pin definition:
• Pin C & backside - Collector
• Pin E - Emitter
• Pin G - Gate
C
G
Type
Package
Marking
IKW50N65ET7
PG-TO247-3
K50EET7
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
1.00
2021-06-29
IKW50N65ET7
Low Loss Duopack: IGBT 7
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
1
2
3
4
5
6
Datasheet
2
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IKW50N65ET7
Low Loss Duopack: IGBT 7
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
13.0
Unit
Internal emitter inductance
measured 5 mm (0.197 in)
from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque, M3 screw
Maximum of mounting
processes: 3
M
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
650
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current, limited
by Tvjmax
IC
limited by bondwire
TC = 25 °C
80
TC = 100 °C
59.7
150
Pulsed collector current, tp
ICpuls
A
A
1)
limited by Tvjmax
Turn-off safe operating
VCE ≤ 650 V, tP = 1 µs, Tvj ≤ 175 °C
tp ≤ 10 µs, D < 0.010
150
area2)
Gate-emitter voltage
VGE
VGE
20
30
V
V
Transient gate-emitter
voltage
Short circuit withstand time
tSC
VGE = 15 V, Allowed
VCC ≤ 330 V,
5
3
µs
number of short circuits Tvj = 100 °C
< 1000, Time between
short circuits ≥ 1.0 s
Tvj = 150 °C
VCC ≤ 400 V,
Power dissipation
Ptot
TC = 25 °C
273
136
W
TC = 100 °C
1) Defined by design. Not subject to production test.
2) Clamped inductive load current test for each device, IC=150A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10Ω
Datasheet
3
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IKW50N65ET7
Low Loss Duopack: IGBT 7
2 IGBT
Table 3
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 50.0 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.35
1.50
1.60
5.00
1.65
V
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.50 mA, VCE = VGE
VCE = 650 V, VGE = 0 V
4.30
5.70
40
V
Zero gate voltage collector
current
Tvj = 25 °C
µA
Tvj = 175 °C
1000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE = 0 V, VGE = 20 V
IC = 50.0 A, VCE = 20 V
100
nA
S
26
Short circuit collector
current
ISC
VGE = 15 V, tSC ≤ 3 µs, Allowed number of
short circuits < 1000 , Time between short
circuits ≥ 1.0 s
255
A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coes
Cres
QG
VCE = 25 V, VGE = 0 V, f = 1000 kHz
VCE = 25 V, VGE = 0 V, f = 1000 kHz
VCE = 25 V, VGE = 0 V, f = 1000 kHz
IC = 50.0 A, VGE = 15 V, VCE = 520 V
3050
92
pF
pF
pF
nC
ns
31
290
26
Turn-on delay time
tdon
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
Tvj = 25 °C,
IC = 50.0 A
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 25.0 A
24
30
27
20
11
23
14
Tvj = 175 °C,
IC = 50.0 A
Tvj = 175 °C,
IC = 25.0 A
Rise time (inductive load)
tr
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 50.0 A
ns
Tvj = 25 °C,
IC = 25.0 A
Tvj = 175 °C,
IC = 50.0 A
Tvj = 175 °C,
IC = 25.0 A
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
2 IGBT
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
350
Unit
Turn-off delay time
Fall time (inductive load)
Turn-on energy
tdoff
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 50.0 A
ns
Tvj = 25 °C,
IC = 25.0 A
370
410
450
14
Tvj = 175 °C,
IC = 50.0 A
Tvj = 175 °C,
IC = 25.0 A
tf
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 50.0 A
ns
Tvj = 25 °C,
IC = 25.0 A
12
Tvj = 175 °C,
IC = 50.0 A
30
Tvj = 175 °C,
IC = 25.0 A
40
Eon
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 50.0 A
1.20
0.51
1.91
0.88
0.85
0.38
1.40
0.69
mJ
Tvj = 25 °C,
IC = 25.0 A
Tvj = 175 °C,
IC = 50.0 A
Tvj = 175 °C,
IC = 25.0 A
Turn-off energy
Eoff
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 50.0 A
mJ
Tvj = 25 °C,
IC = 25.0 A
Tvj = 175 °C,
IC = 50.0 A
Tvj = 175 °C,
IC = 25.0 A
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
3 Diode
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
2.05
Unit
Total switching energy
Ets
VCE = 400 V, VGE = 15 V,
RGon = 9.0 Ω,
Tvj = 25 °C,
IC = 50.0 A
mJ
RGoff = 9.0 Ω, Lσ = 32 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 25.0 A
0.89
3.31
1.57
Tvj = 175 °C,
IC = 50.0 A
Tvj = 175 °C,
IC = 25.0 A
IGBT thermal resistance,
junction-case
Rthjc
Tvj
0.55 K/W
Operating junction
temperature
-40
175
°C
Note:
Electrical Characteristic, at Tvj=25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj ≥ 25 °C
650
V
Diode forward current,
limited by Tvjmax
IF
limited by bondwire
TC = 25 °C
80
50
A
A
TC = 100 °C
Diode pulsed current,
IFpuls
150
1)
limited by Tvjmax
1) Defined by design. Not subject to production test.
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Diode forward voltage
Reverse leakage current
VF
IF = 50.0 A
VR = 650 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
1.65
1.60
1.55
2.00
V
IR
40
µA
1000
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
3 Diode
Table 5
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
93
Unit
Diode reverse recovery time
trr
Qrr
Irrm
VR = 400 V
VR = 400 V
VR = 400 V
Tvj = 25 °C,
ns
IF = 50.0 A,
-diF/dt = 1720 A/µs
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 2340 A/µs
62
Tvj = 175 °C,
IF = 50.0 A,
-diF/dt = 1680 A/µs
140
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 2000 A/µs
105
Diode reverse recovery
charge
Tvj = 25 °C,
IF = 50.0 A,
-diF/dt = 1720 A/µs
1.05
0.74
2.70
1.95
21.0
25.0
33.0
34.0
µC
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 2340 A/µs
Tvj = 175 °C,
IF = 50.0 A,
-diF/dt = 1680 A/µs
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 2000 A/µs
Diode peak reverse recovery
current
Tvj = 25 °C,
IF = 50.0 A,
-diF/dt = 1720 A/µs
A
Tvj = 25 °C,
IF = 25.0 A,
-diF/dt = 2340 A/µs
Tvj = 175 °C,
IF = 50.0 A,
-diF/dt = 1680 A/µs
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 2000 A/µs
Datasheet
7
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IKW50N65ET7
Low Loss Duopack: IGBT 7
3 Diode
Table 5
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min. Typ. Max.
-260
Unit
Diode peak rate off fall of
reverse recovery current
dIrr/dt VR = 400 V
Tvj = 25 °C,
A/µs
IF = 50.0 A,
-diF/dt = 1720 A/µs
Tvj = 25 °C,
-490
-290
-415
IF = 25.0 A,
-diF/dt = 2340 A/µs
Tvj = 175 °C,
IF = 50.0 A,
-diF/dt = 1680 A/µs
Tvj = 175 °C,
IF = 25.0 A,
-diF/dt = 2000 A/µs
Diode thermal resistance,
junction-case
Rthjc
Tvj
0.80 K/W
175 °C
Operating junction
temperature
-40
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Datasheet
8
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
4
Characteristics diagrams
Power dissipation as a function of case temperature, Collector current as a function of case temperature,
IGBT
IGBT
Ptot = f(Tc)
IC = f(Tc)
Tvj ≤ 175 °C
Tvj ≤ 175 °C, VGE ≥ 15 V
300
270
240
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
60
30
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Typical output characteristic, IGBT
IC = f(VCE
Typical output characteristic, IGBT
IC = f(VCE
)
)
Tvj = 25 °C
Tvj = 175 °C
150
150
125
100
75
50
25
0
125
100
75
50
25
0
0
1
2
3
4
5
0
1
2
3
4
5
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical transfer characteristic, IGBT
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
VCEsat = f(Tvj)
IC = f(VGE
)
VCE = 20 V
VGE = 15 V
150
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
125
100
75
50
25
0
25
50
75
100
125
150
175
2
4
6
8
10
12
14
Gate-emitter threshold voltage as a function of
junction temperature, IGBT
Typical switching times as a function of collector
current, IGBT
VGEth = f(Tvj)
t = f(IC)
IC = 0.50 mA
VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 9 Ω
6
5
4
3
2
1
0
1000
100
10
1
25
50
75
100
125
150
0
25
50
75
100
125
150
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical switching times as a function of gate resistor, Typical switching times as a function of junction
IGBT
temperature, IGBT
t = f(RG)
t = f(Tvj)
IC = 50.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V
IC = 50.0 A, VCE = 400 V, VGE = 0/15 V, RG = 9 Ω
10000
1000
100
10
1000
100
10
1
1
25
50
75
100
125
150
175
0
20
40
60
80
100
120
Typical switching energy losses as a function of
collector current, IGBT
Typical switching energy losses as a function of gate
resistor, IGBT
E = f(IC)
E = f(RG)
VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 9 Ω
IC = 50.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
25
50
75
100
125
150
0
20
40
60
80
100
120
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical switching energy losses as a function of
junction temperature, IGBT
Typical switching energy losses as a function of
collector emitter voltage, IGBT
E = f(Tvj)
E = f(VCE)
IC = 50.0 A, VCE = 400 V, VGE = 0/15 V, RG = 9 Ω
IC = 50.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 9 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Typical gate charge, IGBT
Typical capacitance as a function of collector-emitter
voltage, IGBT
VGE = f(QGE
)
C = f(VCE
)
IC = 50.0 A
f = 1000 kHz, VGE = 0 V
16
14
12
10
8
10000
1000
100
10
6
4
2
0
0
50
100
150
200
250
300
0
5
10
15
20
25
30
Datasheet
12
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical short circuit safe operating range as a function Typical short circuit collector current as a function of
of collector-emitter voltage, IGBT
gate-emitter voltage, IGBT
IC(SC) = f(VGE
tSC = f(VCE
)
)
VCE = 400 V, Tvj = 150 °C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
450
400
350
300
250
200
150
100
50
0
300 310 320 330 340 350 360 370 380 390 400
8
10
12
14
16
18
20
IGBT transient thermal resistance, IGBT
Zth = f(tp)
D = tp/T
Diode transient thermal impedance as a function of
pulse width, Diode
Zth = f(tp)
D = tp/T
1
1
0.1
0.1
0.01
0.001
0.01
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
Datasheet
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical diode forward current as a function of forward Typical diode forward voltage as a function of
voltage, Diode
junction temperature, Diode
IF = f(VF)
VF = f(Tvj)
150
125
100
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Typical reverse recovery time as a function of diode
current slope, Diode
Typical reverse recovery charge as a function of diode
current slope, Diode
trr = f(diF/dt)
Qrr = f(diF/dt)
VR = 400 V, IF = 50 A
VR = 400 V, IF = 50 A
350
300
250
200
150
100
50
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
500
1000
1500
2000
2500
3000
500
1000
1500
2000
2500
3000
Datasheet
14
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IKW50N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope, Diode
Irr = f(diF/dt)
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR = 400 V, IF = 50 A
VR = 400 V, IF = 50 A
40
35
30
25
20
15
10
5
0
-50
-100
-150
-200
-250
-300
-350
-400
0
500
1000
1500
2000
2500
3000
500
1000
1500
2000
2500
3000
Datasheet
15
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IKW50N65ET7
Low Loss Duopack: IGBT 7
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figure 6
Datasheet
16
1.00
2021-06-29
IKW50N65ET7
Low Loss Duopack: IGBT 7
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
t
rr = ta + tb
dIF/dt
Q
rr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
10% IC
90% IC
10% IC
Figure C. Definition of diode switching
t
characteristics
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
s
parasitic capacitor C ,
s
relief capacitor C ,
r
t2
t4
(only for ZVT switching)
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 7
Datasheet
17
1.00
2021-06-29
IKW50N65ET7
Low Loss Duopack: IGBT 7
Revision history
Revision history
Document revision
Date of release Description of changes
V0.1
V1.1
V2.1
1.00
2019-10-25
2020-04-20
2020-05-12
2021-06-29
Target Data Sheet
Preliminary data sheet
Final data sheet
Change of potential applications and new diagram added (tSC as
function of VCE
)
Datasheet
18
1.00
2021-06-29
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-06-29
Published by
Infineon Technologies AG
81726 Munich, Germany
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IFX-AAL329-004
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