IKZ75N65ES5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IKZ75N65ES5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总16页 (文件大小：1427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀcurrent
ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀS5ꢀtechnologyꢀoffering
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching
•ꢀVeryꢀLowꢀVCEsat,ꢀ1.42Vꢀatꢀnominalꢀcurrent
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀRAPIDꢀ1ꢀfastꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀIndustrialꢀUPS
•ꢀIndustrialꢀSMPS
•ꢀEnergyꢀStorage
•ꢀCharger
•ꢀWelding
ProductꢀValidation:
Qualifiedꢀforꢀapplicationsꢀlistedꢀaboveꢀbasedꢀonꢀtheꢀtest
conditionsꢀinꢀtheꢀrelevantꢀtestsꢀofꢀJEDEC20/22
Packageꢀpinꢀdefinition:
•ꢀPinꢀCꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀEꢀ-ꢀemitter
•ꢀPinꢀKꢀ-ꢀKelvinꢀemitter
•ꢀPinꢀGꢀ-ꢀgate
Pleaseꢀnote:ꢀTheꢀemitterꢀandꢀKelvinꢀemitterꢀpinsꢀareꢀnot
exchangeable.ꢀTheirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.42V 175°C
Marking
Package
IKZ75N65ES5
650V
75A
K75EES5
PG-TO247-4
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
1)
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IC
80.0
80.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IF
80.0
80.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
395.0
197.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.38 K/W
0.46 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) value limited by bondwire
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.42 1.75
1.55
1.65
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.50 1.75
Diode forward voltage
VF
V
1.48
1.45
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.75mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
3000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
100
-
nA
S
100.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4500
130
17
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
164.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
46
25
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ22.3Ω,ꢀRG(off)ꢀ=ꢀ22.3Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
405
22
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.30
1.50
2.80
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
43
17
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ37.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ22.3Ω,ꢀRG(off)ꢀ=ꢀ22.3Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
430
19
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.60
0.50
1.10
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
72
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ2500A/µs
Qrr
1.40
39.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-700
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
47
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ37.5A,
diF/dtꢀ=ꢀ2500A/µs
Qrr
1.00
36.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1300
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
42
28
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ22.3Ω,ꢀRG(off)ꢀ=ꢀ22.3Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
450
25
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.70
1.90
3.60
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
38
18
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ37.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ22.3Ω,ꢀRG(off)ꢀ=ꢀ22.3Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
480
36
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
1.00
0.70
1.70
mJ
mJ
mJ
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
115
4.00
64.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ2500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-800
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
85
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ37.5A,
Qrr
2.80
60.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ2500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1100
-
A/µs
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
400
360
320
280
240
200
160
120
80
90
80
70
60
50
40
30
20
10
0
40
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
225
225
VGE = 20V
VGE = 20V
18V
15V
12V
10V
8V
18V
15V
12V
10V
8V
200
175
150
125
100
75
200
175
150
125
100
75
7V
7V
6V
6V
5V
5V
50
50
25
25
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
225
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tvj = 25°C
Tvj = 150°C
IC = 37.5A
IC = 75A
IC = 150A
200
175
150
125
100
75
50
25
0
0
2
4
6
8
10
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
td(off)
tf
td(on)
td(off)
tf
td(on)
tr
1000
1000
tr
100
10
1
100
10
1
0
25
50
75 100 125 150 175 200 225
10
15
20
25
30
35
40
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRGon=22,3Ω,ꢀRGoff=22,3Ω,
dynamic test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
1000
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=75A,ꢀRGon=22,3Ω,ꢀRGoff=22,3Ω,ꢀdynamic
test circuit in Figure E)
(IC=0.75mA)
14
7
Eoff
Eoff
Eon
Eon
Ets
Ets
12
6
10
8
5
4
3
2
1
0
6
4
2
0
0
25
50
75 100 125 150 175 200 225
10
15
20
25
30
35
40
45
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRGon=22,3Ω,ꢀRGoff=22,3Ω,
dynamic test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
9
Vꢀ2.2
2019-06-07
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
4.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=75A,ꢀRGon=22,3Ω,ꢀRGoff=22,3Ω,ꢀdynamic
test circuit in Figure E)
IC=75A,ꢀRGon=22,3Ω,ꢀRGoff=22,3Ω,ꢀdynamic
test circuit in Figure E)
16
14
12
10
8
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Coes
Cres
1E+4
1000
100
6
4
2
0
10
0
20
40
60
80 100 120 140 160 180
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=75A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
10
Vꢀ2.2
2019-06-07
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
1
1
D = 0.5
D = 0.5
0.2
0.1
0.1
0.2
0.1
0.1
0.05
0.02
0.01
0.05
0.02
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
i:
1
2
3
4
5
ri[K/W]: 0.055187 0.066217 0.032994 0.047784 0.16907
ri[K/W]: 0.026043 0.055146 0.065162 0.107057 0.1792
τi[s]:
2.7E-5
2.5E-4
1.8E-3
0.010969 0.049264
τi[s]:
7.0E-6
7.9E-5
6.8E-4
7.0E-3
0.103035
0.001
1E-6
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
180
5.0
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
160
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
60
40
20
0
2000 2500 3000 3500 4000 4500 5000 5500
2000 2500 3000 3500 4000 4500 5000 5500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
11
Vꢀ2.2
2019-06-07
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
110
0
-500
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
100
Tvj = 25°C, IF = 75A
Tvj = 150°C, IF = 75A
-1000
-1500
-2000
-2500
-3000
-3500
-4000
-4500
-5000
90
80
70
60
50
40
30
20
2000 2500 3000 3500 4000 4500 5000 5500
2000 2500 3000 3500 4000 4500 5000 5500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
225
2.50
Tvj = 25°C
Tvj = 150°C
IF = 37.5A
IF = 75A
IF = 150A
200
2.25
175
150
125
100
75
2.00
1.75
1.50
1.25
1.00
0.75
0.50
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.2
2019-06-07
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
Package Drawing PG-TO247-4
Datasheet
13
Vꢀ2.2
2019-06-07
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.2
2019-06-07
IKZ75N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
RevisionꢀHistory
IKZ75N65ES5
Revision:ꢀ2019-06-07,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2017-04-26 Final data sheet
2019-06-07 Update Fig.3 and Fig.4
2.1
2.2
Datasheet
15
Vꢀ2.2
2019-06-07
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Publishedꢀby
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