ILD610-2 [INFINEON]
DUAL PHOTOTRANSISTOR OPTOCOUPLER; 双光电晶体管光耦合器
| 型号： | ILD610-2 |
| 厂家： | 
Infineon |
| 描述： | DUAL PHOTOTRANSISTOR OPTOCOUPLER |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILD610 SERIES
DUAL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• Dual Version of SFH610 Series
• High Current Transfer Ratios
ILD610-1, 40-80%
ILD610-2, 63-125%
ILD610-3, 100-200%
ILD610-4, 160-320%
Pin One I.D.
4
3
2
1
8
Anode
Cathode
Anode
8
7
6
5
1
2
3
4
Emitter
.268 (6.81)
.255 (6.48)
Collector
Emitter
5
6
7
• Isolation Test Voltage, 5300 V
RMS
Cathode
Collector
• V
• V
0.25 (≤0.4) V at I =10 mA, I =2.5 mA
F C
=70 V
.390 (9.91)
.379 (9.63)
CEsat
CEO
• Underwriters Lab File #E52744
.305 Typ.
(7.75) Typ.
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
VE
•
VDE #0884 Available with Option 11
D
DESCRIPTION
.135 (3.43)
.115 (2.92)
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
configuration instead of the more common alternat-
ing pin-out used in most dual couplers.
4° Typ.
10 ° Typ.
3°–9°
.040 (1.02)
.030 (.76 )
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.100 (2.54) Typ.
Electrical Characteristics (T =25°C)
A
Symbol
Typ.
Unit
Condition
Emitter
Maximum Ratings (Each Channel)
Forward Voltage
V
1.25
V
I =60mA
Emitter
F
F
(≤1.65)
0.01 (≤10)
25
Reverse Voltage .................................................6 V
Surge Forward Current (t £10 ms)...................1.5 A
Total Power Dissipation ..............................100 mW
Derate Linearly from 25°C ......................1.3 mW/°C
DC Forward Current ......................................60 mA
Reverse Current
Capacitance
I
µA
V =6V
R
R
C
pF
V =0 V,
O
R
f=1 MHz
Detector
Detector
Collector-Emitter Voltage ..................................70 V
Collector Current ..........................................50 mA
Collector Current (t ≤1 ms)..........................100 mA
Total Power Dissipation ..............................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
Breakdown Voltage
Collector-Emitter
Emitter-Collector
BV
90 (≥70)
V
V
I =10 µA
E
CEO
C
BV
7.0 (≥6.0)
I =10 µA
CEO
Collector-Emitter Dark
Current
I
2 (≤50)
nA
pF
V
=10 V
CEO
CE
Package
Capacitance
C
7
V
CE
=5 V,
CE
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
Isolation Resistance
RMS
f=1 MHz
12
11
Package
V =500 V, T =25°C ............................... ≥10
Ω
Ω
IO
A
V =500 V, T =100°C ............................. ≥10
IO
A
Collector-Emitter Saturation
Voltage
V
0.25
(≤0.40)
V
I =10 mA,
F
I =2.5 mA
C
CEsat
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Junction Temperature ................................... 100°C
Lead Soldering Time at 260°C .................... 10 sec.
Coupling Capacitance
C
0.35
pF
C
5–1
-1
-2
-3
-4
1,
CTR I =10 mA, V =5 V
40-80
13 min.
2 (≤50)
63-125
22 min.
2 (≤50)
100-200
34 min.
5 (≤100)
160-320
56 min.
5 (≤100)
%
F
CE
1,
CTR I =1 mA, V =5 V
%
F
CE
I
(V =10 V)
nA
CEO
CE
CTR will match within a ratio of 1.7:1
Switching Characteristics
Linear Operation (without saturation) I =10 mA, V =5 V, R =75 Ω, Typical
F
CC
C
-1
-2
-3
-4
Turn on time
Rise time
t
t
t
t
3.0
2.0
2.3
2.0
3.2
2.5
2.9
2.6
3.6
2.9
3.4
3.1
4.1
3.3
3.7
3.5
µs
µs
µs
µs
on
r
Turn off time
Fall time
off
f
Switching Operation (with saturation) V =5 V, R =1 Ω, Typicall
CC
C
-1
-2
-3
-4
I
= 20 mA
I
= 10 mA
I
= 10 mA
I = 5 mA
F
F
F
F
Turn on time
Rise time
t
t
t
t
3.0
2.0
18
4.3
2.8
2.9
2.6
4.6
3.3
3.4
3.1
6.0
4.6
25
µs
µs
µs
µs
on
r
Turn off time
Fall time
off
f
11
15
Figure 3. Normalized non-saturated and saturated
Figure 1. Forward voltage versus forward current
CTR at T =50°C versus LED current
A
1.5
1.4
Normalized to:
Vce = 5V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
Ta = -55°C
Ta = 25°C
1.0
Ta = 50°C
Ta = 85°C
0.5
NCTR(SAT)
NCTR
.1
1
10
100
0.0
.1
IF - Forward Current - mA
1
10
100
IF - LED Current - mA
Figure 2. Normalized non-saturated and saturated
Figure 4. Normalized non-saturated and saturated
CTR at T =25°C versus LED current
A
CTR at T =70°C versus LED curent
A
1.5
1.5
Normalized to:
Normalized to:
Vce = 5V, IF = 10mA
Ta = 25°C
Vce = 5V, IF = 10mA
Ta = 25°C
1.0
CTRce(sat) Vce = 0.4V
1.0
CTRce(sat) Vce = 0.4V
0.5
0.5
Ta = 70°C
NCTR(SAT)
NCTR
NCTR(SAT)
NCTR
0.0
0.0
.1
1
10
100
.1
1
10
100
IF - LED Current - mA
IF - LED Current - mA
ILD610
5–2
Figure 5. Normalized non-saturated and saturated CTR
Figure 9. Switching timing
at T =85°C versus LED current
A
I
F
1.5
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.0
0.5
0.0
t
R
D
t
V
O
t
PLH
Ta = 85°C
NCTR(SAT)
NCTR
V =1.5 V
TH
t
t
t
S
F
PHL
.1
1
10
100
IF - LED Current - mA
Figure 10. Non-saturated switching schematic
Figure 6. Collector-emitter current versus temperature
and LED current
V
=5 V
CC
F=10 KHz
DF=50%
35
30
R
L
25
I =10 mA
V
F
50°C
O
20
70°C
15
10
5
25°C
85°C
Figure 11. Saturated switching time test waveform
0
Input
0
0
10
20
30
40
50
60
IF - LED Current - mA
t
t
off
on
t
pdon
t
pdof
Figure 7. Collector-emitter leakage current versus
temperature
t
t
r
r
t
d
Output
t
s
0
5
10
10%
50%
90%
10%
50%
4
10
3
90%
10
2
10
Vce = 10V
TYPICAL
1
10
10
0
-1
-2
10
10
-20
0
20
40
60
80
100
Ta - Ambient Temperature - °C
Figure 8. Propagation delay versus collector load
resistor
1000
100
10
2.5
Ta = 2 5 ° C, IF = 10mA
Vcc = 5 V,Vth = 1.5 V
tpHL
2.0
1.5
1.0
tpLH
1
.1
1
10
100
RL - Collector Load Resistor - KΩ
ILD610
5–3
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