ILD621 [INFINEON]
MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER; 多通道光电晶体管光耦合器
| 型号： | ILD621 |
| 厂家： | 
Infineon |
| 描述： | MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DUAL CHANNEL ILD621/621GB
QUAD CHANNEL ILQ621/621GB
MULTI-CHANNEL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4
Pin One I.D.
4
3
2
1
• Current Transfer Ratio (CTR) at I = 5 mA
F
ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
• Saturated Current Transfer Ratio (CTR
.268 (6.81)
.255 (6.48)
Anode
1
2
3
4
8
7
6
5
Emitter
Cathode
Cathode
Collector
Collector
)
SAT
5
6
7
8
at I =1 mA
F
.390 (9.91)
.379 (9.63)
Anode
Emitter
ILD/Q621: 60% Typ.
ILD/Q621GB: 30% Min.
•
•
High Collector-Emitter Voltage, BV
Dual and Quad Packages Feature:
=70 V
.305 typ.
(7.75) typ.
CEO
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
-
-
-
-
Reduced Board Space
Lower Pin and Parts Count
Better Channel to Channel CTR Match
Improved Common Mode Rejection
.135 (3.43)
.115 (2.92)
4°
Typ.
10°
Typ.
.040 (1.02)
.030 (.76 )
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
.100 (2.54)
Typ.
Pin One I.D.
Anode
Cathode
1
2
3
4
5
6
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
• Isolation Test Voltage from Double Molded
Package, 5300 VAC
RMS
Cathode
Anode
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
.268 (6.81)
.255 (6.48)
Anode
Maximum Ratings (Each Channel)
Cathode
Cathode
Anode
Emitter
.790 (20.07)
.779 (19.77 )
Collector
Emitter
7
10
9
Reverse Voltage .................................................6 V
Forward Current ...........................................60 mA
Surge Current .................................................1.5 A
Power Dissipation.......................................100 mW
Derate from 25°C ................................1.33 mW/°C
8
.305 typ.
(7.75) typ.
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.135 (3.43)
.115 (2.92)
Detector
4°
Typ.
10°
Typ.
.040 (1.02)
.030 (.76 )
Collector-Emitter Reverse Voltage ...................70 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms)..........................100 mA
Power Dissipation.......................................150 mW
Derate from 25°C .................................... –2 mW/°C
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.100 (2.54)
Typ.
Package
DESCRIPTION
Isolation Test Voltage
(t=1 sec.) ......................................... 7500 VAC
(t=1 min.) ....................................... 5300 VAC
Package Dissipation ILD620/GB............... 400 mW
Derate from 25°C ...............................5.33 mW/°C
Package Dissipation ILQ620/GB ..............500 mW
Derate from 25°C ...............................6.67 mW/°C
Creepage ............................................... 7 mm min.
Clearance ............................................... 7 min min.
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-
plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-
tors. These devices are constructed using over/under leadframe optical
coupling and double molded insulation technology. This assembly process
offers a withstand test voltage of 7500 VDC.
PK
RMS
The ILD/Q621GB is well suited for CMOS interfacing given the CTR
of
CEsat
30% minimum at I of 1 mA. High gain linear operation is guaranteed by a
F
minimum CTR of 100% at 5 mA. The ILD/Q621 has a guaranteed CTR of
CE
CE
50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback circuits, where constant DC
Isolation Resistance
12
V =500 V, T =25°C ............................... ≥10
Ω
Ω
IO
A
11
V
voltages are present.
V =500 V, T =100°C ............................. ≥10
IO
IO
A
Storage Temperature ................... –55°C to +150°C
Operating Temperature ................–55°C to +100°C
Junction Temperature .................................... 100°C
Soldering Temperature
(2 mm from case bottom).......................... 260°C
5–1
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
1
1.15
0.01
40
1.3
10
V
I =10 mA
F
F
Reverse Current
I
µA
pF
V =6 V
R
R
Capacitance
C
R
V =0 V, f=1 MHz
F
O
Thermal Resistance, Junction to Lead
Detector
750
°C/W
THJL
Capacitance
C
6.8
10
2
pF
V
=5 V, f=1 MHz
V =24 V
CE
CE
CE
Collector-Emitter Leakage Current
Collector-Emitter Leakage Current
Thermal Resistance, Junction to Lead
Package Transfer Characteristics
Channel/Channel CTR Match
ILD/Q621
I
100
50
nA
CEO
I
µA
T =85°C, V =24 V
A CE
CEO
R
500
°C/W
THJL
CTRX/CTRY
1 to 1
3 to 1
I =5 mA, V =5 V
F CE
Saturated Current Transfer Ratio
Current Transfer Ratio
Collector-Emitter Saturation Voltage
ILD/Q621GB
CTR
CTR
60
80
%
%
V
I =1 mA, V =0.4 V
F CE
CEsat
50
600
0.4
I =5 mA, V =5 V
F CE
CE
V
I =8 mA, I =2.4 mA
F CE
CEsat
Saturated Current Transfer Ratio
CTR
CTR
30
%
%
I =1 mA, V =0.4 V
F CE
CEsat
Current Transfer Ratio (Collector-Emit-
ter)
100
200
600
0.4
I =5 mA, V =5 V
F CE
CE
Collector-Emitter Saturation Voltage
Isolation and Insulation
V
V
I =8 mA, I =0.2 mA
F CE
CEsat
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
CMH
CML
5000
5000
V/µs
V/µs
V
=50 V , R =1 kΩ, I =0 mA
CM P-P L F
V
=50 V , R =1 kΩ, I =10
P-P L F
CM
mA
Common Mode Coupling Capacitance
Package Capacitance
C
0.01
pF
pF
Ω
CM
CI-O
0.8
V =0 V, f=1 MHz
IO
12
Insulation Resistance
R
10
V =500 V, T =25°C
IO A
S
Channel to Channel Insulation
500
VAC
Switching Times
Figure 2. Non-saturated switching timing
Figure 1. Non-saturated switching timing
IF
VCC=5 V
IF=10 mA
VO
F=10 KHz,
DF=50 %
RL=75 Ω
tPHL
Characteristic
Symbol
Typ.
Unit
Test
Condition
tPLH
V0
On Time
T
3.0
20
µs
µs
µs
µs
µs
µs
I =±10 mA
F
tS
ON
50%
Rise Time
t
t
t
t
t
V
=5 V
R
CC
Off Time
2.3
2.0
1.1
2.5
R =75 Ω
OFF
F
L
tF
Fall Time
50% of V
tD
tR
PP
Propagation H-L
Propagation L-H
PHL
PLH
ILD/Q621/GB
5–2
Figure 6. Maximum LED power dissipation
Figure 3. Saturated switching timing
200
I
F
150
100
50
t
R
D
t
V
O
t
PLH
V =1.5 V
TH
t
t
t
S
0
F
PHL
--60 -40 -20
0
20
40 60
80 100
Ta - Ambient Temperature - °C
Figure 4. Saturated switching timing
Figure 7. Forward voltage versus forward current
F=10 KHz,
DF=50%
V
=5 V
CC
1.4
R
L
1.3
1.2
1.1
1.0
0.9
0.8
0.7
Ta = -55°C
Ta = 25°C
V
O
I =10 mA
F
Characteristic
Symbol
Typ.
Unit
Test
Condition
Ta = 85°C
On Time
T
4.3
2.8
2.5
11
µs
µs
µs
µs
µs
µs
I =±10 mA
F
ON
.1
1
10
100
Rise Time
t
t
t
t
t
V
=5 V
R
CC
IF - Forward Current - mA
Off Time
R =1 Ω
L
OFF
F
Fall Time
V =1.5 V
TH
Figure 8. Collector-emitter current versus temperature
and LED current
Propagation H-L
Propagation L-H
2.6
7.2
PHL
PLH
35
30
Figure 5. Maximum LED current versus ambient
temperature
25
50°C
20
70°C
120
15
10
5
25°C
85°C
100
80
60
0
0
10
20
30
40
50
60
TJ (MAX)=100°C
40
IF - LED Current - mA
20
0
--60 -40 -20
0
20
40 60
80 100
Ta - Ambient Temperature - °C
ILD/Q621/GB
5–3
Figure 9. Collector-emitter leakage versus temperature
Figure 13. Normalization factor for non-saturated and
saturated CTR T =50°C versus If
5
A
10
2.0
4
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
10
3
CTRce(sat) Vce = 0.4V
10
1.5
2
10
NCTRce
Vce = 10V
TYPICAL
1
1.0
10
10
10
10
0
NCTRce(sat)
0.5
-1
Ta = 50°C
-2
-20
0.0
.1
0
20
40
60
80
100
1
IF
10
100
Ta - Ambient Temperature - °C
-
LED Current
-
mA
Figure 10. Propagation delay versus collector load
resistor
Figure 14. Normalization factor for non-saturated and
saturated CTR T =70°C versus If
A
2.0
1000
100
10
2. 5
Ta= 25°C, IF =
10mA
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
Vcc = 5 V,Vth = 1.5
1.5
V
2. 0
NCTRce
1.0
1. 5
1. 0
NCTRce(sat)
Ta = 70°C
0.5
0.0
tpLH
1
.1
1
10
100
.1
1
IF
10
mA
100
-
LED Current
-
RL - Collector Load Resistor - KΩ
Figure 11. Maximum detector power dissipation
Figure 15. Normalization factor for non-saturated and
saturated CTR T =100°C versus If
A
200
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1.5
150
100
50
0
1.0
NCTRce
0.5
NCTRce(sat)
Ta = 100°C
0.0
.1
-60
-40
-20
0
20
40
60
80
100
1
IF
10
100
Ta - Ambient Temperature - °C
-
LED Current - mA
Figure 12. Maximum collector current versus
collector voltage
Figure 16. Peak LED current versus pulse duration,Tau
10000
1000
τ
Duty Factor
Rth = 500°C/W
.005
.01
.02
100
1000
t
.05
.1
.2
τ
DF = /t
10
25°C
50°C
75°C
.5
100
10
1
90°C
.1
-6
10
-5
10
-4
10
-3
10
-2
-1
10
0
1
10
.1
1
10
100
10
t - LED Pulse Duration - s
10
Vce - Collector-Emitter Voltage - V
ILD/Q621/GB
5–4
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