ILQ2 [INFINEON]
PHOTOTRANSISTOR OPTOCOUPLER; 光电晶体管光耦合器型号: | ILQ2 |
厂家: | Infineon |
描述: | PHOTOTRANSISTOR OPTOCOUPLER |
文件: | 总4页 (文件大小:72K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DUAL CHANNEL ILD1/2/5
QUAD CHANNEL ILQ1/2/5
PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• Current Transfer Ratio at I =10 mA
F
Dual Channel
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
Pin One I.D.
1
4
3
2
Anode
Cathode
Cathode
Anode
1
2
3
4
8
7
6
5
Emitter
ILD/Q5, 50% Min.
• High Collector-Emitter Voltage
.268 (6.81)
.255 (6.48)
Collector
Collector
Emitter
ILD/Q1: BV
=50 V
CEO
ILD/Q2, ILD/Q5: BV
• Field-Effect Stable by TRansparent IOn
Shield (TRIOS) Isolation Test Voltage, 5300
=70 V
CEO
5
6
7
8
.390 (9.91)
.379 (9.63)
.305 Typ.
(7.75) Typ.
VAC
.045 (1.14)
.030 (.76)
RMS
•
•
Underwriters Lab File #E52744
.150 (3.81)
.130 (3.30)
VE
VDE 0884 Available with Option 1
D
.135 (3.43)
.115 (2.92)
4° Typ.
10 ° Typ.
3°–9°
Maximum Ratings (Each Channel)
.040 (1.02)
.030 (.76 )
.022 (.56)
.018 (.46)
Emitter
.012 (.30)
.008 (.20)
.100 (2.54) Typ.
Reverse Voltage ................................................6 V
Forward Current ...........................................60 mA
Surge Current................................................. 2.5 A
Power Dissipation.......................................100 mW
Derate Linearly from 25°C ..................... 1.3 mW/°C
Quad Channel
Pin One I.D.
Anode
Cathode
Cathode
Anode
1
2
3
4
5
6
7
8
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
.268 (6.81)
.255 (6.48)
Detector
Collector-Emitter Reverse Voltage
Anode
Cathode
Cathode
Anode
ILD/Q1 ........................................................... 50 V
ILD/Q2, ILD/Q5...............................................70 V
Collector Current .......................................... 50 mA
Collector Current (t<1 ms)...........................400 mA
Power Dissipation.......................................200 mW
Derate Linearly from 25°C ......................2.6 mW/°C
Collector
Emitter
10
9
.790 (20.07)
.779 (19.77 )
.305 Typ.
(7.75) Typ.
.150 (3.81)
.130 (3.30)
.045 (1.14)
.030 (.76)
.135 (3.43)
.115 (2.92)
Package
4° Typ.
10 ° Typ.
3°–9°
.012 (.30)
.008 (.20)
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23°C/50%RH,
.040 (1.02)
.030 (.76 )
.022 (.56)
.018 (.46)
.100 (2.54) Typ.
DIN 50014) .................................... 5300 VAC
RMS
Creepage ............................................... min. 7 mm
Clearance ............................................... min. 7 mm
DESCRIPTION
Isolation Resistance
12
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared
LEDs and silicon NPN phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a high degree of
electrical isolation between input and output. The ILD/Q1/2/5 are especially
designed for driving medium-speed logic and can be used to eliminate trou-
blesome ground loop and noise problems. Also these couplers can be
used to replace relays and transformers in many digital interface applica-
tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a
single DIP package and the ILQ1/2/5 has four isolated channels per pack-
age.
V =500 V, T =25°C ......................... R =10
Ω
Ω
IO
A
IO
11
V =500 V, T =100°C ....................... R =10
IO
A
IO
Package Power Dissipation ...................... 250 mW
Derate Linearly from 25°C ..................... 3.3 mW/°C
Storage Temperature ................... –40°C to +150°C
Operating Temperature ................–40°C to +100°C
Junction Temperature .................................... 100°C
Soldering Temperature
(2 mm from case bottom) .......................... 260°C
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
5–1
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
1.25
0.01
25
1.65
10
V
I =60 mA
F
F
Reverse Current
I
µA
pF
V =6 V
R
R
Capacitance
C
R
V =0 V, f=1 MHz
R
0
Thermal Resistance, Junction to Lead
Detector
750
°C/W
THJL
Capacitance
C
6.8
5
pF
nA
V
=5 V, f=1 MHz
V =10 V
CE
CE
CE
Leakage Current, Collector-Emitter
Saturation Voltage, Collector-Emitter
DC Forward Current Gain
Saturated DC Forward Current Gain
Thermal Resistance, Junction to Lead
I
50
CEO
V
0.25
650
400
500
0.4
I
=1 mA, I =20 µA
CESAT
CE B
HFE
HFE
200
120
1800
600
V = 10 V, I =20 µA
CE B
V
= 0.4 V, I =20 µA
SAT
THJL
CE
B
R
°C/W
Package Transfer Characteristics (Each Channel)
Symbol
Min.
Typ.
Max.
Unit
Condition
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter) CTR
75
90
%
%
I =10 mA, V =0.4 V
F CE
CESAT
Current Transfer Ratio (Collector-Emitter)
CTR
20
300
500
400
I =10 mA, V =10 V
F CE
CE
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter) CTR
170
200
%
%
I =10 mA, V =0.4 V
F CE
CESAT
Current Transfer Ratio (Collector-Emitter)
CTR
100
50
I =10 mA, V =10 V
F CE
CE
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter) CTR
100
130
%
%
I =10 mA, V =0.4 V
F CE
CESAT
Current Transfer Ratio (Collector-Emitter)
Isolation and Insulation
CTR
I =10 mA, V =10 V
F CE
CE
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
C
C
C
C
5000
5000
0.01
0.8
V/µs
V/µs
pF
V
=50 V , R =1 kΩ, I =0 mA
MH
ML
CM P-P L F
V
=50 V , R =1 kΩ, I =10 mA
P-P L F
CM
CM
IO
pF
V =0 V, f=1 MHz
IO
ILD/Q1/2/5
5–2
Typical Switching Times
Characteristic ILD/Q1
ILD/Q2
ILD/Q5
Unit
Condition
Figure 1. Non-saturated switching timing
I =20 mA I =5 mA
I =10 mA
F
F
F
Delay, t
D
0.8
1.7
1.7
2.6
0.4
2.2
1.1
µs
µs
µs
µs
µs
V
=5 V
CC
I =10 mA
F
Rise time, t
1.9
0.2
1.4
0.7
2.6
0.4
2.2
1.2
R
V
O
V
=5 V
CE
F=10 KHz,
DF=50%
Storage, t
R =75 Ω
S
L
R =75 kΩ
L
50% of V
PP
Fall Time, t
F
Propagation
H-L, t
Figure 2. Non-saturated switching timing
PHL
IF
Propagation
L-H, t
1.4
2.3
2.5
µs
PLH
Characteristic ILD/Q1
ILD/Q2
ILD/Q5
Unit
Condition
I =20 mA I =5 mA
I =10 mA
F
F
F
tPHL
Delay, t
0.8
1
1.7
7
µs
µs
µs
µs
µs
D
tPLH
V
O
Rise time, t
1.2
7.4
7.6
1.6
2
R
tS
V
=0.4 V
CE
Storage, t
5.4
13.5
5.4
4.6
20
2.6
S
R =1 kΩ
50%
L
V
=5 V
CC
Fall Time, t
F
V
=1.5 V
TH
tF
tR
tD
Propagation
H-L, t
PHL
Propagation
L-H, t
8.6
7.4
7.2
µs
Figure 3. Saturated switching timing
PLH
F=10 KHz,
DF=50%
V
=5 V
CC
Figure 5. Normalized non-saturated and saturated
R
CTR at T =25°C versus LED current
L
A
1.4
I =10 mA
V
F
O
1.3
Ta = -55°C
1.2
1.1
Ta = 25°C
Figure 4. Saturated switching timing
1.0
IF
0.9
Ta = 100°C
0.8
0.7
.1
1
10
100
If - Forward Current - mA
tD
Figure 6. Normalized non-saturated and saturated
CTR at T =25°C versus LED current
tR
A
V
O
1.5
tPLH
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25°C
VTH=1.5 V
CTRce(sat) Vce = 0.4V
1.0
tF
tS
tPHL
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
100
IF - LED Current - mA
ILD/Q1/2/5
5–3
Figure 10. Collector-emitter current versus tempera-
ture and LED current
Figure 7. Normalized non-saturated and saturated
CTR at T =50°C versus LED current
A
35
30
1.5
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
25
50°C
1.0
20
Ta = 50°C
70°C
15
10
5
25°C
85°C
0.5
NCTR(SAT)
NCTR
0
0
10
20
30
40
50
60
0.0
IF - LED Current - mA
.1
1
10
100
IF - LED Current - mA
Figure 11. Collector-emitter leakage current versus
temperature
Figure 8. Normalized non-saturated and saturated
CTR at T =70°C versus LED current
A
5
10
1.5
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25°C
4
10
3
10
CTRce(sat) Vce = 0.4V
1.0
2
10
Vce = 10V
1
10
TYPICAL
0
0.5
10
10
10
Ta = 70°C
-1
-2
NCTR(SAT)
NCTR
0.0
-20
0
20
40
60
80
100
.1
1
10
100
Ta - Ambient Temperature - °C
IF - LED Current - mA
Figure 12. Propagation delay versus collector load
resistor
Figure 9. Normalized non-saturated and saturated
CTR at T =85°C versus LED current
A
1000
100
10
2.5
2.0
1.5
1.0
1.5
Ta = 25°C, IF = 10mA
Vcc = 5V, Vth = 1.5V
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
tPLH
1.0
0.5
Ta = 85°C
NCTR(SAT)
tPHL
NCTR
10
IF - LED Current - mA
0.0
.1
1
.1
1
100
1
10
100
RL - Collector Load Resistor - KΩ
ILD/Q1/2/5
5–4
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