IM535-U6D [INFINEON]

CIPOS™ Mini 600 V, 30 A three-phase intelligent power module;
IM535-U6D
型号: IM535-U6D
厂家: Infineon    Infineon
描述:

CIPOS™ Mini 600 V, 30 A three-phase intelligent power module

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IM535-U6D/IM535-U6DS Datasheet  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Description  
The CIPOSIM535 product family offers the chance for integrating various power and control components to  
increase reliability and optimize PCB size and system cost. It is designed to control three-phase motors in  
variable speed drives. The package concept is specially adapted to power applications, which need good  
thermal conduction and electrical isolation, but also less EMI and overload protection. To deliver excellent  
electrical performance, Infineon’s leading-edge TRENCHSTOPIGBTs and anti-parallel diodes are combined  
with an optimized SOI gate driver.  
Features  
Package  
Fully isolated dual in-line molded module  
Very low thermal resistance due to DCB substrate  
Lead-free terminal plating; RoHS compliant  
Inverter  
TRENCHSTOPIGBTs for inverter  
Rugged SOI gate driver technology with stability  
against transient and negative voltage  
Allowable negative VS potential up to -11 V  
for signal transmission at VBS = 15 V  
Integrated bootstrap functionality  
Over-current shutdown  
Built-in NTC thermistor for temperature monitor  
Under-voltage lockout at all channels  
Low-side emitter pins accessible for phase current  
monitoring (open emitter)  
Sleep function  
Cross-conduction prevention  
All of 6 switches turn off during protection  
Potential applications  
Home appliances, low power motor drives  
Datasheet  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 23  
Verison 2.1  
2021-04-09  
www.infineon.com  
 
 
 
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Product validation  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.  
Table 1  
Product Information  
Standard Pack  
Base Part Number  
Package Type  
Remarks  
Form  
MOQ  
280 pcs  
280 pcs  
IM535-U6D  
DIP 36x21D  
DIP 36x21D  
14 pcs / Tube  
14 pcs / Tube  
IM535-U6DS  
Extended stand-off  
Datasheet  
2 of 23  
Verison 2.1  
2021-04-09  
 
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Table of Contents  
Table of Contents  
Description .................................................................................................................................... 1  
Features ........................................................................................................................................ 1  
Potential applications..................................................................................................................... 1  
Product validation.......................................................................................................................... 2  
Table of Contents ........................................................................................................................... 3  
1
Internal Electrical Schematic................................................................................................... 4  
2
2.1  
2.2  
Pin Description ...................................................................................................................... 5  
Pin Assignment........................................................................................................................................5  
Pin Description ........................................................................................................................................6  
3
Absolute Maximum Ratings ..................................................................................................... 8  
Module Section........................................................................................................................................8  
Inverter Section .......................................................................................................................................8  
Control Section........................................................................................................................................8  
3.1  
3.2  
3.3  
4
5
Thermal Characteristics.......................................................................................................... 9  
Recommended Operation Conditions ......................................................................................10  
6
6.1  
6.2  
Static Parameters .................................................................................................................11  
Inverter Section .....................................................................................................................................11  
Control Section......................................................................................................................................11  
7
7.1  
7.2  
Dynamic Parameters .............................................................................................................12  
Inverter Section .....................................................................................................................................12  
Control Section......................................................................................................................................12  
8
Thermistor ...........................................................................................................................13  
Mechanical Characteristics and Ratings ...................................................................................14  
Qualification Information.......................................................................................................15  
9
10  
11  
Diagrams and Tables .............................................................................................................16  
TC Measurement Point...........................................................................................................................16  
Backside Curvature Measurment Point................................................................................................16  
Switching Time Definition.....................................................................................................................17  
Sleep function timing diagram .............................................................................................................17  
11.1  
11.2  
11.3  
11.4  
12  
12.1  
12.2  
Application Guide..................................................................................................................18  
Typical Application Schematic .............................................................................................................18  
Performance Chart................................................................................................................................19  
13  
Package Outline....................................................................................................................20  
Revision history.............................................................................................................................22  
Datasheet  
3 of 23  
Verison 2.1  
2021-04-09  
 
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Internal Electrical Schematic  
1
Internal Electrical Schematic  
NC (24)  
P (23)  
U (22)  
(1) VS(U)  
(2) VB(U)  
VB1  
VB2  
HO1  
VS1  
RBS1  
(3) VS(V)  
(4) VB(V)  
HO2  
VS2  
RBS2  
V (21)  
(5) VS(W)  
(6) VB(W)  
HO3  
VS3  
VB3  
W (20)  
RBS3  
LO1  
LO2  
LO3  
(7) HIN(U)  
(8) HIN(V)  
HIN1  
HIN2  
NU (19)  
NV (18)  
NW (17)  
(9) HIN(W)  
(10) LIN(U)  
HIN3  
LIN1  
(11) LIN(V)  
(12) LIN(W)  
(13) VDD  
LIN2  
LIN3  
VDD  
VFO  
(14) VFO  
(15) ITRIP  
ITRIP  
VSS  
(16) VSS  
Thermistor  
Figure 1  
Internal electrical schematic  
Datasheet  
4 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Pin Description  
2
Pin Description  
2.1  
Pin Assignment  
Bottom View  
(24) NC  
(1) VS(U)  
(2) VB(U)  
(23) P  
(22) U  
(21) V  
(20) W  
(19) NU  
(3) VS(V)  
(4) VB(V)  
(5) VS(W)  
(6) VB(W)  
(7) HIN(U)  
(8) HIN(V)  
(9) HIN(W)  
(10) LIN(U)  
(11) LIN(V)  
(12) LIN(W)  
(13) VDD  
(14) VFO  
(18) NV  
(17) NW  
(15) ITRIP  
(16) VSS  
Figure 2  
Table 2  
Pin configuration  
Pin assignment  
Pin Number  
Pin name  
VS(U)  
Pin Description  
1
2
U-phase high-side floating IC supply offset voltage  
U-phase high-side floating IC supply voltage  
V-phase high-side floating IC supply offset voltage  
V-phase high-side floating IC supply voltage  
W-phase high-side floating IC supply offset voltage  
W-phase high-side floating IC supply voltage  
U-phase high-side gate driver input  
V-phase high-side gate driver input  
W-phase high-side gate driver input  
U-phase low-side gate driver input  
V-phase low-side gate driver input  
VB(U)  
VS(V)  
3
4
VB(V)  
5
VS(W)  
VB(W)  
HIN(U)  
HIN(V)  
HIN(W)  
LIN(U)  
LIN(V)  
LIN(W)  
VDD  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
W-phase low-side gate driver input  
Low-side control supply  
VFO  
Fault output / temperature monitor  
Over-current shutdown input  
ITRIP  
VSS  
Low-side control negative supply  
NW  
W-phase low-side emitter  
Datasheet  
5 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Pin Description  
Pin Number  
Pin name  
Pin Description  
18  
19  
20  
NV  
NU  
W
V-phase low-side emitter  
U-phase low-side emitter  
Motor W-phase output  
Motor V-phase output  
Motor U-phase output  
Positive bus input voltage  
No connection  
21  
22  
23  
24  
V
U
P
NC  
2.2  
Pin Description  
HIN(U, V, W) and LIN(U, V, W) (Low-side and high-  
side control pins, Pin 7 - 12)  
HO1 and LO1, HO2 and LO2, HO3 and LO3). When  
both inputs of the same leg are activated, only  
formerly activated one is remained activated so  
that the leg is kept steadily in a safe state.  
A minimum deadtime insertion of typically 360 ns is  
also provided by driver, in order to reduce cross-  
conduction of the IGBTs.  
These pins are positive logic and they are  
responsible for the control of the integrated IGBTs.  
The Schmitt-trigger input thresholds of them are  
such to guarantee LSTTL and CMOS compatibility  
down to 3.3 V controller outputs. A pull-down  
resistor of about 5 kΩ is internally provided to pre-  
VFO (Fault-output and NTC, Pin 14)  
bias input during supply start-up, and a zener  
clamp is provided to protect the pin. Negative  
pulses down to an absolute minimum of -5.5 V are  
allowed that offers an outstanding robustness.  
Input Schmitt-trigger and noise filter provide noise  
rejection to short input pulses.  
The VFO pin indicates a module failure in case of  
under voltage at pin VDD or in case of triggered over-  
current detection at ITRIP. An external pull-up  
resistor is required.  
IM535  
VDD  
The noise filter suppresses control pulses shoter  
than the filter time tFIL,IN. The Figure 4 describes how  
the filter works. An input pulse-width shorter than 1  
µs is not recommended.  
RON,FLT  
From ITRIP - Latch  
VFO  
VSS  
1
From UV detection  
Thermistor  
Figure 5  
Internal circuit at pin VFO  
IM535  
VDD  
Schmitt-Trigger  
The sleep function is activated after each trigger of  
ITRIP or under-voltage lockout. A new edge input  
signal is mandatory to activate gate drives after  
falut-clear time as shown in Figure 10.  
HINx  
LINx  
INPUT NOISE  
FILTER  
5k  
SWITCH LEVEL  
VIH; VIL  
VSS  
Figure 3  
Input pin structure  
ITRIP (Over-current detection function, Pin 15)  
a)  
b)  
tFIL,IN  
The IM535 product family provides an over-current  
detection function by connecting the ITRIP input  
with the IGBT current feedback. The ITRIP  
comparator threshold (typ. 0.525 V) is referenced to  
VSS. An input noise filter (tITRIPMIN = typ. 300 ns)  
prevents the driver to detect false over-current  
events.  
tFIL,IN  
HIN  
LIN  
HIN  
LIN  
high  
HO  
LO  
HO  
low  
LO  
Figure 4  
Input filter timing diagram  
Over-current detection generates a shutdown of  
outputs of the gate driver. Fast track shutdown  
The integrated gate driver additionally provides a  
shoot-through prevention capability that avoids  
the simultaneous on-states of the same leg (i.e.  
Datasheet  
6 of 23  
Verison 2.1  
2021-04-09  
 
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Pin Description  
function allows low-side outputs to be turned off  
faster than high side outputs about 200 ns.  
The fault-clear time is set to minimum 100 µs.  
The under-voltage detection operates with a rising  
supply threshold of typical VBSUV+ = 11.5 V and a  
falling threshold of VBSUV- = 10.7 V.  
VS(U, V, W) provide a high robustness against  
negative voltage in respect of VSS of -50 V transiently.  
This ensures very stable designs even under harsh  
conditions.  
VDD, VSS (Low-side control supply and reference,  
Pin 13, 16)  
VDD is the control supply and it provides power both  
to input logic and to output stage. Input logic is  
referenced to VSS ground.  
NW, NV, NU (Low-side emitter, Pin 17 - 19)  
The under-voltage circuit enables the device to  
operate at power on when a supply voltage of at  
least a typical voltage of VDDUV+ = 12.4 V is present.  
The gate driver shuts down all the outputs, when  
the VDD supply voltage is below VDDUV- = 11.5 V. This  
prevents the IGBTs from critically low gate voltage  
levels during on-state and therefore from excessive  
power dissipation.  
The low-side emitters are available for current  
measurement of each phase leg. It is recommended  
to keep the connection to pin VSS as short as  
possible to avoid unnecessary inductive voltage  
drops.  
W, V, U (High-side emitter and low-side collector,  
Pin 20 - 22)  
These pins are connected to motor U, V, W input  
pins  
VB(U, V, W) and VS(U, V, W) (High-side supplies,  
Pin 1 - 6)  
P (Positive bus input voltage, Pin 23)  
VB to VS is the high-side supply voltage. The high-  
side circuit can float with respect to VSS following  
the high-side IGBT emitter voltage.  
Due to the low power consumption, the floating  
driver stage is supplied by integrated bootstrap  
circuit.  
The high-side IGBTs are connected to the bus  
voltage. It is noted that the bus voltage does not  
exceed 450 V.  
Datasheet  
7 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Absolute Maximum Ratings  
3
Absolute Maximum Ratings  
(VDD = 15 V and TJ = 25°C, if not stated otherwise)  
3.1  
Module Section  
Description  
Symbol  
TSTG  
TC  
Condition  
Refer to Figure 7  
Value  
-40 ~ 125  
-40 ~ 125  
-40 ~ 150  
2000  
Unit  
°C  
Storage temperature range  
Operating case temperature  
Operating junction temperature  
Isolation test voltage  
°C  
TJ  
°C  
VISO  
1 min, RMS, f = 60 Hz  
V
3.2  
Inverter Section  
Description  
Symbol  
VCES  
Condition  
IC = 250 µA  
Value  
600  
Unit  
Max. blocking voltage  
V
V
V
DC link supply voltage of P-N  
DC link supply voltage (surge) of P-N  
VPN  
Applied between P-N  
Applied between P-N  
450  
VPN(surge)  
500  
TC = 25°C, TJ < 150°C  
TC = 80°C, TJ < 150°C  
±30  
±22  
Continuous collector current  
IC  
A
TC = 25°C, TJ < 150°C  
less than 1 ms  
Maximum peak collector current  
IC(peak)  
A
±60  
Power dissipation per IGBT  
Short circuit withstand time1  
Ptot  
tSC  
83.3  
5
W
VDC 400V, TJ = 150°C  
µs  
3.3  
Control Section  
Description  
Symbol  
Condition  
Value  
Unit  
High-side offset voltage  
VS  
600  
V
Repetitive peak reverse voltage of  
bootstrap diode  
VRRM  
VDD  
VBS  
VIN  
600  
-1 ~ 20  
V
V
V
V
Module supply voltage  
High-side floating supply voltage  
(VB reference to VS)  
-1 ~ 20  
Input voltage(LIN, HIN, ITRIP)  
-1 ~ VDD+0.3  
1 Allowed number of short circuits: < 1000; time between short circuits: > 1 s.  
Datasheet  
8 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Thermal Characteristics  
4
Thermal Characteristics  
Value  
Typ.  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
Low-side U-phase  
(See Figure 7 for TC  
measurement point)  
Single IGBT thermal resistance,  
junction to case  
RthJC  
1.49  
K/W  
K/W  
Single diode thermal resistance,  
junction to case  
RthJC,D  
Low-side U-phase  
2.18  
Datasheet  
9 of 23  
Verison 2.1  
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CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Recommended Operation Conditions  
5
Recommended Operation Conditions  
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.  
Value  
Description  
Symbol  
Unit  
Min.  
0
Typ.  
300  
15  
Max.  
450  
DC link supply voltage of P-N  
VPN  
VDD  
V
V
V
Low-side supply voltage  
13  
17.5  
17.5  
High-side floating supply voltage (VB vs. VS)  
VBS  
13  
-
VIN  
VITRIP  
fPWM  
Logic input voltages LIN, HIN, ITRIP  
0
-
5
V
Inverter PWM carrier frequency  
-
-
-
-
20  
-
kHz  
µs  
V
External deadtime between HIN and LIN  
Voltage between VSS N (including surge)  
DT  
2
VCOMP  
PWIN(ON)  
PWIN(OFF)  
-5  
5
Minimum input pulse width  
Control supply variation  
1
-
-
µs  
ΔVBS,  
ΔVDD  
-1  
-1  
-
-
1
1
V/µs  
Datasheet  
10 of 23  
Verison 2.1  
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CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Static Parameters  
6
Static Parameters  
(VDD = 15 V and TJ = 25°C, if not stated otherwise)  
6.1  
Inverter Section  
Value  
Typ.  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
IC = 30 A, TJ = 25°C  
IC = 30 A, TJ = 150°C  
-
-
1.8  
2.05  
2.1  
-
Collector-emitter voltage  
Collector-emitter leakage current  
Diode forward voltage  
VCE(Sat)  
ICES  
V
mA  
V
VCE = 600 V  
-
-
-
-
1
2.35  
-
IF = 30 A, TJ = 25°C  
IF = 30 A, TJ = 150°C  
1.95  
1.9  
VF  
6.2  
Control Section  
Value  
Typ.  
2.0  
Description  
Symbol  
Condition  
Unit  
Min.  
1.7  
Max.  
2.3  
Logic "1" input voltage (LIN, HIN)  
Logic "0" input voltage (LIN, HIN)  
ITRIP positive going threshold  
ITRIP input hysteresis  
VIH  
V
VIL  
0.7  
0.9  
1.1  
V
VIT,TH+  
VIT,HYS  
VDDUV+  
VBSUV+  
VDDUV-  
VBSUV-  
475  
45  
525  
70  
570  
-
mV  
mV  
11.5  
10.6  
10.6  
9.7  
12.4  
11.5  
11.5  
10.7  
13.1  
12.2  
12.3  
11.7  
VDD and VBS supply under-voltage  
positive going threshold  
V
V
VDD and VBS supply under-voltage  
negative going threshold  
VDD and VBS supply under-voltage  
lockout hysteresis  
VDDUVH  
VBSUVH  
0.5  
0.9  
-
V
Quiescent VBx supply current  
(VBx only)  
IQBS  
IQDD  
HIN = 0 V  
-
-
-
-
300  
1.1  
µA  
mA  
Quiescent VDD supply current  
(VDD only)  
LIN = 0 V, HINX = 5 V  
Input bias current for LIN, HIN  
Input bias current for ITRIP  
Input bias current for VFO  
VFO output voltage  
IIN+  
IITRIP+  
IFO  
VIN = 5 V  
-
-
-
-
-
1.1  
68  
1.7  
mA  
µA  
µA  
V
VITRIP = 5 V  
185  
VFO = 5 V, VITRIP = 0 V  
IFO = 10 mA, VITRIP = 1 V  
IF = 0.3 mA  
60  
-
-
-
VFO  
0.35  
1.0  
Bootstrap diode forward voltage  
VF_BSD  
V
Between VF1 = 4 V and VF2 = 5  
V
37  
Bootstrap diode resistance  
RBSD  
-
-
Ω
Datasheet  
11 of 23  
Verison 2.1  
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CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Dynamic Parameters  
7
Dynamic Parameters  
(VDD = 15 V and TJ = 25°C, if not stated otherwise)  
7.1  
Inverter Section  
Value  
Typ.  
725  
85  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
Turn-on propagation delay time  
Turn-on rise time  
ton  
tr  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
VLIN, HIN = 5 V,  
IC = 30 A,  
VDC = 300 V  
Turn-on switching time  
Reverse recovery time  
tc(on)  
trr  
295  
320  
900  
25  
Turn-off propagation delay time  
Turn-off fall time  
toff  
tf  
VLIN, HIN = 0 V,  
IC = 30 A,  
VDC = 300 V  
Turn-off switching time  
Short circuit propagation delay time  
tc(off)  
tSCP  
90  
From VIT,TH+ to 10% ISC  
1550  
VDC = 300 V, IC = 30 A  
TJ = 25°C  
TJ = 150°C  
IGBT turn-on energy (includes  
reverse recovery of diode)  
Eon  
Eoff  
Erec  
-
-
1430  
1820  
-
-
µJ  
µJ  
µJ  
VDC = 300 V, IC = 30 A  
TJ = 25°C  
TJ = 150°C  
IGBT turn-off energy  
-
-
495  
730  
-
-
VDC = 300 V, IC = 30 A  
TJ = 25°C  
TJ = 150°C  
Diode recovery energy  
-
-
105  
245  
-
-
7.2  
Control Section  
Value  
Typ.  
530  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
Input filter time ITRIP  
tITRIP  
tFIL,IN  
tFLTCLR  
tFLT  
VITRIP = 1 V  
-
-
ns  
ns  
µs  
ns  
ns  
ns  
Input filter time at LIN, HIN for turn  
on and off  
VLIN, HIN = 0 V or 5 V  
-
290  
280  
680  
360  
20  
-
Fault clear time after ITRIP-fault  
ITRIP to fault propagation delay  
Internal deadtime  
100  
-
V
V
LIN, HIN = 0 or VLIN, HIN = 5 V,  
ITRIP = 1 V  
-
-
-
1000  
DTIC  
MT  
-
-
External dead time > 500  
ns  
Matching propagation delay time (on  
and off) all channels  
Datasheet  
12 of 23  
Verison 2.1  
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CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Thermistor  
8
Thermistor  
Value  
Typ.  
85  
Description  
Condition  
Symbol  
Unit  
Min.  
Max.  
Resistance  
TNTC = 25°C  
RNTC  
-
-
k  
B-constant of NTC  
(negative temperature coefficient)  
thermistor  
B(25/100)  
-
4092  
-
K
3500  
35  
Min.  
Typ.  
3000  
30  
Max.  
25  
2500  
20  
15  
2000  
10  
1500  
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130  
1000  
500  
0
Thermistor temperature []  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
Thermistor temperature []  
Figure 6  
Thermistor resistance temperature curve and table  
(For more information, please refer to the application note)  
Datasheet  
13 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Mechanical Characteristics and Ratings  
9
Mechanical Characteristics and Ratings  
Value  
Typ.  
-
Description  
Condition  
Unit  
Min.  
600  
0.49  
-50  
-
Max.  
-
Comparative tracking index (CTI)  
Mounting torque  
V
M3 screw and washer  
Refer to Figure 8  
0.78  
100  
-
Nm  
µm  
g
Backside curvature  
Weight  
-
6.58  
Datasheet  
14 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Qualification Information  
10  
Qualification Information  
UL certification  
File number: E314539  
Moisture sensitivity level  
(SOP23 only)  
-
RoHS compliant  
Yes (Lead-free terminal plating)  
HBM(human body model) class  
2
ESD  
CDM(charged device model)  
class  
C3  
Datasheet  
15 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Diagrams and Tables  
11  
Diagrams and Tables  
11.1  
TC Measurement Point  
Figure 7  
TC measurement point1  
11.2  
Backside Curvature Measurment Point  
+
-
- +  
Figure 8  
Backside curvature measurement position  
1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and  
brings wrong or different information.  
Datasheet  
16 of 23  
Verison 2.1  
2021-04-09  
 
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Diagrams and Tables  
11.3  
Switching Time Definition  
HINx  
LINx  
2.0V  
0.9V  
trr  
irm  
toff  
ton  
10% irm  
iCx  
90%  
90%  
tf  
tr  
10%  
10%  
10%  
10%  
vCEx  
tc(on)  
tc(off)  
Figure 9  
Switching time definition  
11.4  
Sleep function timing diagram  
HINx  
LINx  
HOx  
LOx  
ITRIP  
VDD  
VFO  
VBS  
Figure 10 Sleep function timing diagram  
Datasheet  
17 of 23  
Verison 2.1  
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CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Application Guide  
12  
Application Guide  
12.1  
Typical Application Schematic  
NC (24)  
P (23)  
(1) VS(U)  
(2) VB(U)  
VB1  
HO1  
VS1  
RBS1  
U (22)  
(3) VS(V)  
#4  
(4) VB(V)  
VB2  
HO2  
VS2  
V (21)  
RBS2  
3-ph AC  
Motor  
(5) VS(W)  
(6) VB(W)  
VB3  
HO3  
VS3  
W (20)  
RBS3  
#5  
#1  
(7) HIN(U)  
HIN1  
LO1  
LO2  
LO3  
(8) HIN(V)  
HIN2  
NU (19)  
(9) HIN(W)  
HIN3  
(10) LIN(U)  
LIN1  
(11) LIN(V)  
LIN2  
Micro  
Controller  
#7  
#6  
(12) LIN(W)  
LIN3  
NV (18)  
(13) VDD  
Power  
GND line  
VDD  
VDD line  
(14) VFO  
VFO  
(15) ITRIP  
ITRIP  
5 or 3.3V line  
(16) VSS  
NW (17)  
VSS  
Thermistor  
#3  
U-phase current sensing  
V-phase current sensing  
W-phase current sensing  
Temperature monitor  
#2  
<Signal for protection>  
<Signal for protection>  
Figure 11 Typical application circuit  
#1 Input circuit  
RC filter can be used to reduce input signal noise. (100 Ω, 1 nF)  
The capacitors should be located close to the IPM (to VSS terminal especially).  
#2 ITRIP circuit  
To prevent a mis operation of protection function, RC filter is recommended.  
The capacitor should be located close to ITRIP and VSS terminals.  
#3 VFO circuit  
VFO pin is open drain configuration. This terminal should be pulled up to the bias voltage of the 5 V/3.3 V  
through a proper resistor.  
It is recommended that RC filter is placed close to the controller.  
#4 VB-VS circuit  
Capacitors for high-side floating supply voltage should be placed close to VB and VS terminals.  
#5 Snubber capacitor  
The wiring among the IPM, snubber capacitor and shunt resistors should be short as possible.  
#6 Shunt resistor  
SMD type shunt resistors are strongly recommended to minimize its internal stray inductance.  
#7 Ground pattern  
Pattern overlap of power ground and signal ground should be minimized. The patterns should be  
connected at one end of shunt resistor only for the same potential.  
Datasheet  
18 of 23  
Verison 2.1  
2021-04-09  
 
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Application Guide  
12.2  
Performance Chart  
30  
25  
20  
15  
10  
5
VDC = 300 V, VDD = VBS = 15 V, SVPWM  
TJ 150oC, TC 125oC, M.I. = 0.8, P.F. = 0.8  
fSW = 5 kHz  
fSW = 15 kHz  
0
0
25  
50  
75  
100  
125  
150  
Case temperature, TC [oC]  
Figure 12 Maximum operating current SOA1  
1This maximum operating current SOA is just one of example based on typical characteristics for this product. It  
can be changed by each users actual operating conditions.  
Datasheet  
19 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Package Outline  
13  
Package Outline  
Figure 13 IM535-U6D  
Datasheet  
20 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Package Outline  
Figure 14 IM535-U6DS  
Datasheet  
21 of 23  
Verison 2.1  
2021-04-09  
CIPOS™ Mini IM535  
IM535-U6D/IM535-U6DS  
Revision history  
Revision history  
Document  
version  
Date of release  
Description of changes  
Version 2.0  
Version 2.1  
2020-05-07  
2021-04-09  
Initial release  
Corrected typo in page 8  
Corrected error in Figure 9  
Updated Figure 11  
Datasheet  
22 of 23  
Verison 2.1  
2021-04-09  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
IMPORTANT NOTICE  
The information given in this document shall in no For further information on the product, technology,  
Edition 2021-04-09  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
Published by  
characteristics (“Beschaffenheitsgarantie”) .  
contact your nearest Infineon Technologies office  
(www.infineon.com).  
Infineon Technologies AG  
81726 München, Germany  
With respect to any examples, hints or any typical  
values stated herein and/or any information Please note that this product is not qualified  
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents  
Technologies hereby disclaims any and all of the Automotive Electronics Council.  
warranties and liabilities of any kind, including  
© 2021 Infineon Technologies AG.  
All Rights Reserved.  
without limitation warranties of non-infringement  
of intellectual property rights of any third party.  
WARNINGS  
Due to technical requirements products may  
contain dangerous substances. For information on  
the types in question please contact your nearest  
Infineon Technologies office.  
Do you have a question about this  
document?  
In addition, any information given in this document  
is subject to customer’s compliance with its  
obligations stated in this document and any  
applicable legal requirements, norms and  
standards concerning customer’s products and any  
use of the product of Infineon Technologies in  
customer’s applications.  
Email: erratum@infineon.com  
Except as otherwise explicitly approved by Infineon  
Technologies in a written document signed by  
Document reference  
ifx1  
authorized  
representatives  
of  
Infineon  
Technologies, Infineon Technologies’ products may  
not be used in any applications where a failure of  
the product or any consequences of the use thereof  
can reasonably be expected to result in personal  
injury.  
The data contained in this document is exclusively  
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