IM818-MCC [INFINEON]

CIPOS™ Maxi 1200 V, 10 A three-phase Intelligent Power Module;
IM818-MCC
型号: IM818-MCC
厂家: Infineon    Infineon
描述:

CIPOS™ Maxi 1200 V, 10 A three-phase Intelligent Power Module

电动机控制
文件: 总21页 (文件大小:696K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IM818-MCC Datasheet  
CIPOS™ Maxi IM818  
IM818-MCC  
Description  
The CIPOSMaxi IM818 product group offers the chance for integrating various power and control  
components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC  
motors and permanent magnet motors in variable speed drives applications such as low power motor drives (GPI,  
Servo drives), pumps, fan drives and active filter for HVAC (Heating, Ventilation, and Air Conditioning). The  
product concept is specially adapted to power applications, which need good thermal performance and  
electrical isolation as well as EMI save control and overload protection.  
Three phase inverter with 1200V TRENCHSTOPIGBTs and Emitter Controlled diodes are combined with an  
optimized 6-channel SOI gate driver for excellent electrical performance.  
Features  
Fully isolated Dual In-Line molded module  
1200V TRENCHSTOPIGBT4  
Rugged 1200V SOI gate driver technology with stability  
against transient and negative voltage  
Allowable negative VS potential up to -11 V  
for signal transmission at VBS = 15 V  
Integrated bootstrap functionality  
Over current shutdown  
Built-in NTC thermistor for temperature monitor  
Under-voltage lockout at all channels  
Low side emitter pins accessible for phase  
current monitoring (open emitter)  
Anti cross-conduction  
All of 6 switches turn off during protection  
Programmable fault clear timing and enable input  
Lead-free terminal plating; RoHS compliant  
Potential applications  
Fan drives and active filter for HVAC, pumps, and low power motor drives (GPI, Servo Drives)  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.  
Table 1  
Product Name  
IM818-MCC  
Product Information  
Standard Pack  
Package Type  
Remark  
Form  
14 pcs / tube  
MOQ  
DIP 36x23D  
280  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 21  
V 2.3  
2022-02-23  
 
 
 
 
CIPOS™ Maxi IM818  
IM818-MCC  
Table of Contents  
Table of Contents  
Description .................................................................................................................................... 1  
Features ........................................................................................................................................ 1  
Potential applications..................................................................................................................... 1  
Product validation.......................................................................................................................... 1  
Table of Contents ........................................................................................................................... 2  
1
Internal Electrical Schematic................................................................................................... 3  
2
2.1  
2.2  
Pin Configuration ................................................................................................................... 4  
Pin Assignment........................................................................................................................................4  
Pin Description ........................................................................................................................................5  
3
Absolute Maximum Ratings ..................................................................................................... 7  
Module Section........................................................................................................................................7  
Inverter Section.......................................................................................................................................7  
Control Section........................................................................................................................................7  
3.1  
3.2  
3.3  
4
5
Thermal Characteirstics.......................................................................................................... 8  
Recommended Operation Conditions ....................................................................................... 9  
6
6.1  
6.2  
Static Parameters .................................................................................................................10  
Inverter Section .....................................................................................................................................10  
Control Section......................................................................................................................................10  
7
7.1  
7.2  
Dynamic Parameters .............................................................................................................11  
Inverter Section .....................................................................................................................................11  
Control Section......................................................................................................................................11  
8
Thermistor Characteristics.....................................................................................................12  
Mechanical Characteristics and Ratings ...................................................................................13  
Qualification Information.......................................................................................................14  
9
10  
11  
Diagrams and Tables .............................................................................................................15  
TC Measurement Point...........................................................................................................................15  
Backside Curvature Measurement Point..............................................................................................15  
Switching Time Definition.....................................................................................................................16  
11.1  
11.2  
11.3  
12  
12.1  
12.2  
Application Guide..................................................................................................................17  
Typical Application Schematic .............................................................................................................17  
Performance Charts ..............................................................................................................................18  
13  
Package Outline....................................................................................................................19  
Revision history.............................................................................................................................20  
Datasheet  
2 of 21  
V 2.3  
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CIPOS™ Maxi IM818  
IM818-MCC  
Internal Electrical Schematic  
1
Internal Electrical Schematic  
P (24)  
U (23)  
(1) VS(U)  
(2) VB(U)  
VB1  
HO1  
VS1  
RBS1  
(3) VS(V)  
(4) VB(V)  
HO2  
VS2  
VB2  
RBS2  
V (22)  
(5) VS(W)  
(6) VB(W)  
HO3  
VS3  
VB3  
W (21)  
RBS3  
LO1  
LO2  
LO3  
(7) HIN(U)  
(8) HIN(V)  
HIN1  
HIN2  
NU (20)  
NV (19)  
NW (18)  
(9) HIN(W)  
(10) LIN(U)  
HIN3  
LIN1  
(11) LIN(V)  
(12) LIN(W)  
(13) VDD  
LIN2  
LIN3  
VDD  
RFE  
(14) RFE  
(15) ITRIP  
ITRIP  
VSS  
(16) VSS  
(17) VTH  
Thermistor  
Figure 1  
Internal electrical schematic  
Datasheet  
3 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Pin Configuration  
2
Pin Configuration  
2.1  
Pin Assignment  
Bottom view  
(24) P  
(23) U  
(22) V  
(21) W  
(1) VS(U)  
(2) VB(U)  
(3) VS(V)  
(4) VB(V)  
(5) VS(W)  
(6) VB(W)  
(7) HIN(U)  
(8) HIN(V)  
(9) HIN(W)  
(10) LIN(U)  
(11) LIN(V)  
(12) LIN(W)  
(13) VDD  
(14) RFE  
(20) NU  
(19) NV  
(18) NW  
(15) ITRIP  
(16) VSS  
(17) VTH  
Figure 2  
Module pinout  
Table 2  
Pin Assignment  
Pin name  
VS(U)  
Pin Number  
Pin Description  
1
2
U-phase high side floating IC supply offset voltage  
U-phase high side floating IC supply voltage  
V-phase high side floating IC supply offset voltage  
V-phase high side floating IC supply voltage  
W-phase high side floating IC supply offset voltage  
W-phase high side floating IC supply voltage  
U-phase high side gate driver input  
VB(U)  
3
VS(V)  
4
VB(V)  
5
VS(W)  
6
VB(W)  
7
HIN(U)  
HIN(V)  
HIN(W)  
LIN(U)  
LIN(V)  
8
V-phase high side gate driver input  
9
W-phase high side gate driver input  
10  
11  
12  
13  
U-phase low side gate driver input  
V-phase low side gate driver input  
LIN(W)  
VDD  
W-phase low side gate driver input  
Low side control supply  
Datasheet  
4 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Pin Configuration  
Pin Number  
Pin name  
Pin Description  
Programmable fault clear time, fault output, enable input  
Over current shutdown input  
Low side control negative supply  
Thermistor  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
RFE  
ITRIP  
VSS  
VTH  
NW  
NV  
NU  
W
W-phase low side emitter  
V-phase low side emitter  
U-phase low side emitter  
Motor W-phase output  
V
Motor V-phase output  
U
Motor U-phase output  
P
Positive bus input voltage  
2.2  
Pin Description  
It is not recommended for proper work to provide  
input pulse-width lower than 1 µs.  
HIN (U, V, W) and LIN (U, V, W) (Low side and high  
side control pins, Pin 7 - 12)  
The integrated gate driver provides additionally a  
shoot through prevention capability which avoids  
the simultaneous on-state of two gate drivers of the  
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and  
LO3). When two inputs of a same leg are activated,  
only former activated one is activated so that the leg  
is kept steadily in a safe state.  
These pins are positive logic and they are  
responsible for the control of the integrated IGBTs.  
The schmitt-trigger input thresholds of them are  
such to guarantee LSTTL and CMOS compatibility  
down to 3.3 V controller outputs. Pull-down resistor  
of about 5 kis internally provided to pre-bias  
inputs during supply start-up. Input schmitt-trigger  
and noise filter provide beneficial noise rejection to  
short input pulses.  
A minimum deadtime insertion of typically 360 ns is  
also provided by driver IC, in order to reduce cross-  
conduction of the external power switches.  
The noise filter suppresses control pulses which are  
below the filter time tFIL,IN. The filter acts according to  
Figure 4.  
RFE (Fault / Fault clear time / Enable, Pin 14)  
The RFE pin conbines three functions in one pin:  
programmable fault clear time by RC-network, fault-  
out and enable input.  
CIPOSTM  
Schmitt-Trigger  
The programmable fault-clear time can be adjusted  
by RC network, which is external pull-up resistor and  
capacitor. For example, typical value is about 1ms at  
HINx  
LINx  
INPUT NOISE  
FILTER  
5k  
SWITCH LEVEL  
VIH; VIL  
VSS  
1 MΩ and 2 nF.  
Figure 3  
Input pin structure  
The fault-out indicates a module failure in case of  
under voltage at pin VDD or in case of triggered over  
current detection at ITRIP.  
a)  
b)  
HIN  
tFIL,IN  
tFIL,IN  
HIN  
LIN  
LIN  
The microcontroller can pull this pin low to disable  
the IPM functionality. This is enable function.  
high  
HO  
LO  
HO  
LO  
low  
Figure 4  
Input filter timing diagram  
Datasheet  
5 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Pin Configuration  
The IC shuts down all the gate drivers power outputs,  
when the VDD supply voltage is below VDDUV- = 11.2 V.  
This prevents the external power switches from  
critically low gate voltage levels during on-state and  
therefore from excessive power dissipation.  
CIPOS  
Bi-direction  
Schmitt-Trigger  
NOISE FILTER  
RFE  
From ITRIP - Latch  
From UV detection  
1
VSS  
RON,FLT  
VB (U, V, W) and VS (U, V, W) (High side supplies,  
Pin 1 - 6)  
Figure 5  
Internal circuit at pin RFE  
VB to VS is the high side supply voltage. The high side  
circuit can float with respect to VSS following the  
external high side power device emitter voltage.  
VTH (Thermistor, Pin 17)  
The VTH pin provides direct access to the NTC,  
which is referenced to VSS. An external pull-up  
resistor connected to +5 V ensures that the resulting  
voltage can be directly connected to the  
microcontroller.  
Due to the low power consumption, the floating  
driver stage is supplied by integrated bootstrap  
circuit.  
The under-voltage detection operates with a rising  
supply threshold of typical VBSUV+ = 11.2 V and a  
falling threshold of VBSUV- = 10.2 V.  
ITRIP (Over current detection function, Pin 15)  
IM818 provides an over current detection function  
by connecting the ITRIP input with the IGBT  
collector current feedback. The ITRIP comparator  
threshold (typ. 0.5 V) is referenced to VSS ground. An  
input noise filter (tITRIP = typ. 500 ns) prevents the  
driver to detect false over-current events.  
VS(U, V, W) provide a high robustness against  
negative voltage in respect of VSS of -50 V transiently.  
This ensures very stable designs even under rough  
conditions.  
NW, NV, NU (Low side emitter, Pin 18 - 20)  
Over current detection generates a shutdown of all  
outputs of the gate driver after the shutdown  
propagation delay of typically 1µs.  
The low side emitters are available for current  
measurements of each phase leg. It is  
recommended to keep the connection to pin VSS as  
short as possible in order to avoid unnecessary  
inductive voltage drops.  
Fault-clear time is set to typical 1.1ms at RRCIN = 1 M  
Ω and CRCIN = 2 nF.  
W, V, U (High side emitter and low side collector,  
Pin 21 - 23)  
VDD, VSS (Low side control supply and  
reference, Pin 13, 16)  
These pins are motor U, V, W input pins.  
VDD is the control supply and it provides power both  
to input logic and to output power stage. Input logic  
is referenced to VSS ground.  
P (Positive bus input voltage, Pin 24)  
The high side IGBTs are connected to the bus  
voltage. It is noted that the bus voltage does not  
exceed 900 V.  
The under-voltage circuit enables the device to  
operate at power on when a supply voltage of at  
least a typical voltage of VDDUV+ = 12.2 V is present.  
Datasheet  
6 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Absolute Maximum Ratings  
3
Absolute Maximum Ratings  
(VDD = 15V and TJ = 25°C, if not stated otherwise)  
3.1  
Module Section  
Description  
Symbol  
TSTG  
TC  
Condition  
Refer to Figure 6  
1min, RMS, f = 60Hz  
Value  
-40 ~ 125  
-40 ~ 125  
-40 ~150  
2500  
Unit  
°C  
Storage temperature range  
Operating case temperature  
Operating junction temperature  
Isolation test voltage  
°C  
TJ  
°C  
VISO  
V
3.2  
Inverter Section  
Description  
Max. blocking voltage  
Symbol  
VCES/VRRM  
VPN  
Condition  
Value  
1200  
900  
Unit  
V
V
V
DC link supply voltage of P-N  
Applied between P-N  
Applied between P-N  
TC = 25°C, TJ < 150°C  
DC link supply voltage (surge) of P-N  
VPN(surge)  
1000  
±16  
DC collector current  
IC  
A
TC = 80°C, TJ < 150°C  
TC = 25°C, tp < 1 ms  
±10  
±20  
Peak collector current  
ICP  
A
Power dissipation per IGBT  
Short circuit withstand time1  
Ptot  
tSC  
67.5  
10  
W
VDC 800 V, TJ = 150°C  
µs  
3.3  
Control Section  
Description  
Symbol  
Condition  
Value  
Unit  
High Side offset voltage  
VS  
1200  
V
Repetitive peak reverse voltage of  
bootstrap diode  
VRRM  
VDD  
VBS  
VIN  
1200  
-1 ~ 20  
V
V
V
V
Module control supply voltage  
High side floating supply voltage  
(VB reference to VS)  
-1 ~ 20  
Input voltage (LIN, HIN, ITRIP, RFE)  
-1 ~ VDD + 0.3  
1 Allowed number of short circuits: < 1000; Time between short circuits: > 1 s.  
Datasheet  
7 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Thermal Characteirstics  
4
Thermal Characteirstics  
Value  
Typ.  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
Single IGBT thermal  
resistance, junction-case  
RthJC  
High side V-phase IGBT  
High side V-phase diode  
-
-
-
1.85  
K/W  
K/W  
Single diode thermal  
resistance, junction-case  
RthJC,D  
-
2.50  
Datasheet  
8 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Recommended Operation Conditions  
5
Recommended Operation Conditions  
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.  
Value  
Description  
Symbol  
Unit  
Min.  
350  
13.5  
12.5  
0
Typ.  
Max.  
800  
18.5  
18.5  
5
DC link supply voltage of P-N  
VPN  
VDD  
600  
V
V
Low side supply voltage  
15  
-
High side floating supply voltage (VB vs. VS)  
Logic input voltages LIN, HIN, ITRIP, RFE  
PWM carrier frequency  
VBS  
V
VIN  
-
V
FPWM  
DT  
-
-
20  
kHz  
µs  
V
External dead time between HIN & LIN  
Voltage between VSS - N (including surge)  
0.5  
-5  
-
-
VCOMP  
PWIN(ON)  
PWIN(OFF)  
-
5
Minimum input pulse width  
Control supply variation  
1
-
-
µs  
ΔVBS,  
ΔVDD  
-1  
-1  
-
-
1
1
V/µs  
Datasheet  
9 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Static Parameters  
6
Static Parameters  
(VDD = 15V and TJ = 25°C, if not stated otherwise)  
6.1  
Inverter Section  
Value  
Typ.  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
IC = 10 A  
TJ = 25°C  
150°C  
Collector-Emitter saturation voltage  
Collector-Emitter leakage current  
Diode forward voltage  
VCE(sat)  
ICES  
-
-
2.0  
2.6  
2.4  
-
V
mA  
V
VCE = 1200 V  
IF = 10 A  
TJ = 25°C  
150°C  
-
-
1
VF  
-
-
1.75  
1.75  
2.25  
-
6.2  
Control Section  
Value  
Typ.  
1.9  
Description  
Symbol  
Condition  
Unit  
Min.  
-
Max.  
2.3  
-
Logic "1" input voltage (LIN, HIN)  
Logic "0" input voltage (LIN, HIN)  
ITRIP positive going threshold  
ITRIP input hysteresis  
VIH  
VIL  
V
0.7  
475  
-
0.9  
V
500  
55  
525  
-
VIT,TH+  
VIT,HYS  
mV  
mV  
VDD and VBS supply under voltage  
positive going threshold  
VDDUV+  
VBSUV+  
11.5  
10.5  
12.2  
11.2  
13.0  
12.0  
V
V
V
VDD / VBS supply under voltage negative  
going threshold  
VDDUV-  
VBSUV-  
10.5  
9.5  
11.2  
10.2  
12.0  
11.0  
VDD / VBS supply under voltage lockout  
hysteresis  
VDDUVH  
VBSUVH  
-
1
-
Quiescent VBx supply current (VBx only)  
Quiescent VDD supply current (VDD only)  
Input bias current for LIN, HIN  
IQBS  
IQDD  
IIN+  
HIN = 0 V  
-
-
-
-
175  
1
-
µA  
mA  
mA  
µA  
LIN = 0 V, HINX = 5 V  
VIN = 5 V  
-
-
1
Input bias current for ITRIP  
IITRIP+  
VITRIP = 5 V  
VRFE = 5 V,  
VITRIP = 0 V  
IRFE = 10 mA,  
VITRIP = 1 V  
30  
100  
Input bias current for RFE  
IRFE  
-
-
5
µA  
RFE output voltage  
VRFE  
-
-
0.4  
1.9  
-
V
V
VRFE positive going threshold  
VRFE,TH+  
2.3  
VRFE negative going threshold  
VRFE,TH-  
0.7  
-
0.9  
-
-
V
Bootstrap diode forward voltage  
VF_BSD  
IF = 0.3 mA  
0.9  
V
Between VF = 4 V  
and VF = 5 V  
Bootstrap diode resistance  
RBSD  
-
120  
-
Ω
Datasheet  
10 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Dynamic Parameters  
7
Dynamic Parameters  
(VDD = 15V and TJ = 25°C, if not stated otherwise)  
7.1  
Inverter Section  
Value  
Typ.  
800  
45  
Description  
Symbol  
Condition  
Unit  
Min.  
Max.  
Turn-on propagation delay time  
Turn-on rise time  
ton  
tr  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
VLIN, HIN = 5 V,  
IC = 10 A,  
VDC = 600 V  
Turn-on switching time  
Reverse recovery time  
Turn-off propagation delay time  
Turn-off fall time  
tc(on)  
trr  
230  
420  
960  
100  
200  
toff  
tf  
VLIN, HIN = 0 V,  
IC = 10 A,  
VDC = 600 V  
Turn-off switching time  
tc(off)  
From VIT,TH+ to 10%  
ISC  
Short circuit propagation delay time  
tSCP  
-
1200  
-
ns  
VDC = 600 V,  
IC = 10 A  
TJ = 25°C  
150°C  
IGBT turn-on energy (includes  
reverse recovery of diode)  
Eon  
mJ  
-
-
1.1  
1.6  
-
-
VDC = 600 V,  
IC = 10 A  
TJ = 25°C  
150°C  
IGBT turn-off energy  
Eoff  
mJ  
mJ  
-
-
0.6  
0.9  
-
-
VDC = 600 V,  
IC = 10 A  
TJ = 25°C  
150°C  
Diode recovery energy  
Erec  
-
-
0.3  
0.6  
-
-
7.2  
Control Section  
Value  
Typ.  
500  
Unit  
Description  
Symbol  
Condition  
Min.  
Max.  
Input filter time ITRIP  
tITRIP  
tFIL,IN  
VITRIP = 1 V  
-
-
ns  
ns  
Input filter time at LIN, HIN for  
turn on and off  
VLIN, HIN = 0 V or 5 V  
-
350  
-
-
VITRIP = 1V,  
Vpull-up = 5V  
Fault clear time after ITRIP-fault  
tFLT,CLR  
1.1  
ms  
(RRFE = 1 MΩ, CRFE = 2 nF)  
V
V
LIN, HIN = 0 or 5 V,  
ITRIP = 1V  
ITRIP to Fault propagation delay  
Internal deadtime  
tFLT  
DTIC  
MT  
-
300  
-
650  
900  
-
ns  
ns  
ns  
VIN = 0 or VIN = 5 V  
-
-
Matching propagation delay  
time (On & Off) all channels  
External dead time > 500ns  
130  
Datasheet  
11 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Thermistor Characteristics  
8
Thermistor Characteristics  
Value  
Typ.  
85  
Description  
Condition  
Symbol  
Unit  
Min.  
Max.  
Resistor  
TNTC = 25°C  
RNTC  
-
-
kΩ  
B-constant of NTC  
(Negative Temperature Coefficient)  
B (25/100)  
-
4092  
-
K
3500  
35  
Min.  
Typ.  
3000  
30  
Max.  
25  
2500  
20  
15  
2000  
10  
1500  
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130  
1000  
500  
0
Thermistor temperature []  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
Thermistor temperature []  
Figure 6  
Thermistor resistance temperature curve and table  
(For more information, please refer to the application note ‘AN2019-16 CIPOSMaxi IM818 application note)  
Datasheet  
12 of 21  
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CIPOS™ Maxi IM818  
IM818-MCC  
Mechanical Characteristics and Ratings  
9
Mechanical Characteristics and Ratings  
Value  
Description  
Condition  
Unit  
Min.  
600  
0.49  
0
Typ.  
Max.  
-
0.78  
150  
-
Comparative Tracking Index (CTI)  
Mounting torque  
Backside Curvature  
Weight  
-
-
-
M3 screw and washer  
Refer to Figure 8  
Nm  
µm  
g
-
7.1  
Datasheet  
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Qualification Information  
10  
Qualification Information  
UL Certification  
File number E314539  
Moisture sensitivity level  
(SOP package only)  
-
RoHS Compliant  
Yes (Lead-free terminal plating)  
HBM (Human body model)  
Class as per JESD22-A114  
2 (>2000V to < 4000V)  
C3 (>=1000V)  
ESD (Electrostatic  
Discharge)  
CDM (Charged Device model)  
Class as per JESD22-C101  
Datasheet  
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Diagrams and Tables  
11  
Diagrams and Tables  
11.1  
TC Measurement Point  
Figure 7  
TC measurement point1  
11.2  
Backside Curvature Measurement Point  
Figure 8  
Backside curvature measurement position  
1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and  
brings wrong or different information.  
Datasheet  
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CIPOS™ Maxi IM818  
IM818-MCC  
Diagrams and Tables  
11.3  
Switching Time Definition  
HINx  
LINx  
2.1V  
0.9V  
trr  
toff  
ton  
10%  
10%  
iCx  
90%  
90%  
tf  
tr  
10%  
10%  
10%  
vCEx  
tc(on)  
tc(off)  
Switching times definition  
Figure 9  
Datasheet  
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IM818-MCC  
Application Guide  
12  
Application Guide  
12.1  
Typical Application Schematic  
P (24)  
U (23)  
(1) VS(U)  
(2) VB(U)  
VB1  
HO1  
VS1  
RBS1  
(3) VS(V)  
#4  
(4) VB(V)  
VB2  
HO2  
VS2  
V (22)  
RBS2  
3-ph AC  
Motor  
(5) VS(W)  
(6) VB(W)  
VB3  
HO3  
VS3  
W (21)  
RBS3  
#5  
#1  
(7) HIN(U)  
HIN1  
LO1  
LO2  
LO3  
(8) HIN(V)  
HIN2  
NU (20)  
NV (19)  
(9) HIN(W)  
HIN3  
(10) LIN(U)  
LIN1  
(11) LIN(V)  
LIN2  
Micro  
Controller  
#7  
#6  
(12) LIN(W)  
LIN3  
(13) VDD  
Power  
GND line  
VDD  
VDD line  
(14) RFE  
RFE  
#2  
(15) ITRIP  
ITRIP  
5 or  
3.3V line  
(16) VSS  
VSS  
NW (18)  
(17) VTH  
Thermistor  
#3.2  
#3.1  
<Signal for protection>  
U-phase current sensing  
V-phase current sensing  
W-phase current sensing  
5 or  
3.3V line  
Temperature monitor  
<Signal for protection>  
Figure 10 Typical application circuit  
1. Input circuit  
-
-
To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100 Ω, 1 nF)  
CIN should be placed as close to VSS pin as possible.  
2. Itrip circuit  
-
To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.  
3. RFE circuit  
3.1 Pull-up resistor (RRFE) and pull-down capacitor (CRFE  
)
-
RFE output is an open drain output. This signal line should be pulled up to the positive side of the 5 V / 3.3 V control  
power supply voltage (VCTR) with a proper resistor RFE.  
-
The fault-clear time is adjusted by RC network of RRFE and CRFE and pull-up voltage.  
tFLTCLR = -RRFE CRFE ln(1- VRFE,TH+/VCTR) + internal fault-clear time 160 s  
tFLTCLR = -1 Mx 2 nF x ln(1 - 1.9 / 5 V) + 160s 1.1ms at RRFE = 1 M, CRFE = 2 nF and VCTR = 5 V  
A pull-up resistor is limited to max. 2 M  
In case of VCTR is higher than 5 V, the RRFE needs to be at least 200 kto limit the IC power dissipation  
3.2 RC filter  
-
It is recommended that RC filter be placed as close to the controller as possible.  
4. VB-VS circuit  
-
Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible.  
5. Snubber capacitor  
-
The wiring between IM818 and snubber capacitor including shunt resistor should be as short as possible.  
6. Shunt resistor  
-
The shunt resistor of SMD type should be used for reducing its stray inductance.  
7. Ground pattern  
-
Ground pattern should be separated at only one point of shunt resistor as short as possible.  
Datasheet  
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Application Guide  
12.2  
Performance Charts  
IM818-MCC  
10  
9
8
7
6
5
4
3
2
1
0
FSW=5kHz  
FSW=15kHz  
VDC=600V, VDD=VBS=15V, SVPWM  
TJ ≤150, TC ≤125oC, M.I.=0.8, P.F.=0.8  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130 140  
Case Temperature, TC []  
Figure 11 Maximum operating current SOA1  
1This maximum operating current SOA is just one of example based on typical characteristics for this product. It  
can be changed by each users actual operating conditions.  
Datasheet  
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Package Outline  
13  
Package Outline  
Datasheet  
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Revision history  
Revision history  
Document  
version  
Date of release  
Description of changes  
2.0  
2018-06-25  
2018-08-20  
Initial release  
Minor change - Figure7, section 4(thermal resistance), section  
10(qualification information), section 13(package outline)  
2.1  
Corrected typo section 7.1(HINx, LINx = 0 V)  
Minor change Table 1 and reference document (AN) number in figure 6  
Update notes (3.1) in section 12.1  
2.2  
2.3  
2019-06-07  
2022-02-23  
Datasheet  
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Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
IMPORTANT NOTICE  
The information given in this document shall in no For further information on the product, technology,  
Edition 2022-02-23  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
Published by  
characteristics (“Beschaffenheitsgarantie”) .  
contact your nearest Infineon Technologies office  
(www.infineon.com).  
Infineon Technologies AG  
81726 München, Germany  
With respect to any examples, hints or any typical  
values stated herein and/or any information Please note that this product is not qualified  
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents  
Technologies hereby disclaims any and all of the Automotive Electronics Council.  
warranties and liabilities of any kind, including  
© 2022 Infineon Technologies AG.  
All Rights Reserved.  
without limitation warranties of non-infringement of  
intellectual property rights of any third party.  
WARNINGS  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies office.  
Do you have a question about this  
document?  
In addition, any information given in this document  
is subject to customer’s compliance with its  
obligations stated in this document and any  
applicable legal requirements, norms and standards  
concerning customer’s products and any use of the  
product of Infineon Technologies in customer’s  
applications.  
Email: erratum@infineon.com  
Except as otherwise explicitly approved by Infineon  
Technologies in a written document signed by  
Document reference  
ifx1  
authorized  
representatives  
of  
Infineon  
Technologies, Infineon Technologies’ products may  
not be used in any applications where a failure of the  
product or any consequences of the use thereof can  
reasonably be expected to result in personal injury.  
The data contained in this document is exclusively  
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