首页 |元器件品牌

IMBG65R163M1H [INFINEON]

CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R163M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。;
IMBG65R163M1H
型号： IMBG65R163M1H
厂家： Infineon    Infineon
描述：

CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R163M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
文件： 总15页 (文件大小：1534K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IMBG65R163M1H  
MOSFET  
PG-TO263-7-12  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology  
developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap  
SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique  
combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh  
temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost  
effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.  
Tab  
1
2
3
4
5
6
7
Features  
•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents  
•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQf  
•ꢀSuperiorꢀgateꢀoxideꢀreliability  
•ꢀTj,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior  
•ꢀLowerꢀRDS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature  
•ꢀIncreasedꢀavalancheꢀcapability  
Drain  
Tab  
*1  
•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ0V-18V)  
•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses  
Gate  
Pin 1  
Driver  
Source  
Pin 2  
Power  
Source  
Pin 3-7  
Benefits  
*1: Internal body diode  
•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse  
•ꢀEaseꢀofꢀuseꢀandꢀintegration  
•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation  
•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability  
•ꢀEfficiencyꢀimprovement  
•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity  
Potentialꢀapplications  
•ꢀTelecomꢀandꢀServerꢀSMPS  
•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)  
•ꢀSolarꢀPVꢀinverters  
•ꢀEVꢀchargingꢀinfrastructure  
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation  
•ꢀClassꢀDꢀamplifiers  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.  
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDSꢀ@ꢀTJꢀ=ꢀ25ꢀ°C  
RDS(on),typ  
Value  
650  
163  
217  
10  
Unit  
V
mΩ  
mΩ  
nC  
A
RDS(on),max  
QG,typ  
IDM  
31  
Qossꢀ@ꢀ400ꢀV  
Eossꢀ@ꢀ400ꢀV  
27  
nC  
µJ  
4.1  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
65R163M1  
RelatedꢀLinks  
IMBG65R163M1H  
PG-TO263-7-12  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
17  
12  
TCꢀ=ꢀ25ꢀ°C  
A
Continuous DC drain current1)  
ID  
TCꢀ=ꢀ100ꢀ°C  
Peak drain current2)  
IDM  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
31  
A
TCꢀ=ꢀ25ꢀ°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFETꢀdv/dtꢀruggedness  
Gate source voltage (static)3)  
Gate source voltage (transient)  
Power dissipation  
-
49  
mJ  
mJ  
A
IDꢀ=ꢀ1.8ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ11  
-
0.24  
1.8  
200  
23  
IDꢀ=ꢀ1.8ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ11  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
TJ  
-
V/ns VDSꢀ=ꢀ0...400ꢀV  
-5  
-7  
-
V
static  
25  
V
tpulse,positiveꢀ<=ꢀ1%ꢀdutyꢀcycle/fsw  
85  
W
TCꢀ=ꢀ25ꢀ°C  
Storage temperature  
-55  
-55  
-
150  
175  
n.a.  
°C  
°C  
Ncm  
-
-
-
Operating junction temperature  
Mounting torque  
-
-
-
-
-
13  
12  
VGS=18V,ꢀTCꢀ=ꢀ25ꢀ°C  
VGS=0V,ꢀTCꢀ=ꢀ25ꢀ°C  
Continuous reverse drain current1)  
ISDC  
A
Repetitive peak reverse drain current1) ISRM  
-
-
-
-
31  
A
V
TCꢀ=ꢀ25ꢀ°C,ꢀpulseꢀwidthꢀtp<=250ns  
Vrms,ꢀTCꢀ=ꢀ25ꢀ°C,ꢀtꢀ=ꢀ1ꢀmin  
Insulation withstand voltage  
VISO  
n.a.  
1)ꢀLimitedꢀbyꢀTJ,max  
2)ꢀPulseꢀwidthꢀtpꢀlimitedꢀbyꢀTJ,max  
3) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
1.76  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
Thermal resistance, junction - ambient  
for SMD version  
layer, 70µm thickness) copper area  
for drain connection and cooling.  
PCB is vertical without air stream  
cooling.  
RthJA  
-
-
35  
-
45  
°C/W  
Soldering temperature, wave- & reflow  
soldering allowed  
Tsold  
260  
°C  
reflow MSL1  
3ꢀꢀꢀꢀꢀOperatingꢀrange  
Tableꢀ4ꢀꢀꢀꢀꢀOperatingꢀrange  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate-source voltage operating range  
including undershoots1)  
VGS  
-2  
-
20  
V
-
1)ꢀImportantꢀnote:ꢀtheꢀselectionꢀofꢀpositiveꢀandꢀnegativeꢀgate-sourceꢀvoltagesꢀimpactsꢀtheꢀlong-termꢀbehaviorꢀofꢀthe  
device.TheꢀdesignꢀguidelinesꢀdescribedꢀinꢀtheꢀCoolSiCTMꢀMOSFETꢀ650ꢀVꢀM1ꢀtrenchꢀpowerꢀdeviceꢀapplicationꢀnote  
AN_1907_PL52_1911_144109 must be considered to ensure sound operation of the device over the planned lifetime.  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage1)  
V(BR)DSS  
VGS(th)  
V
V
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ0.17ꢀmA  
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ1.7ꢀmA  
4.5  
5.7  
-
-
1
3
150  
-
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25ꢀ°C  
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ175ꢀ°C  
Zero gate voltage drain current  
Gate leakage current  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0ꢀV  
-
-
0.163 0.217  
0.228  
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C  
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,ꢀTJꢀ=175ꢀ°C  
Drain-source on-state resistance  
Internal gate resistance  
RDS(on)  
RG  
-
-
16.0  
-
Ω
fꢀ=ꢀ1ꢀMHz  
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
320  
5
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Crss  
Coss  
Qoss  
-
-
-
-
-
pF  
pF  
pF  
nC  
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz  
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz  
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz  
calculationꢀbasedꢀonꢀCoss  
Reverse transfer capacitance  
Output capacitance2)  
Output charge2)  
-
45  
58  
35  
27  
Effective output capacitance, energy  
related3)  
VGSꢀ=ꢀ0ꢀV,  
VDSꢀ=ꢀ0...400ꢀV  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
52  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
Effective output capacitance, time  
related4)  
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0ꢀV,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VDSꢀ=ꢀ0...400ꢀV  
68  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10  
Turn-on delay time  
Rise time  
5.5  
5.9  
8.6  
10  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10  
1)ꢀTestedꢀafterꢀ1ꢀmsꢀpulseꢀatꢀVGSꢀ=ꢀ+20ꢀV  
2)ꢀMaximumꢀspecificationꢀisꢀdefinedꢀbyꢀcalculatedꢀsixꢀsigmaꢀupperꢀconfidenceꢀbound  
3)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV  
4)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
Qgd  
Qg  
-
2
-
nC  
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV  
-
-
2
-
-
nC  
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ5.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV  
10  
nC  
Tableꢀ8ꢀꢀꢀꢀꢀBodyꢀdiodeꢀcharacteristics  
Values  
Typ.  
4.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Drain-source reverse voltage  
MOSFET forward recovery time  
VSD  
tfr  
-
-
V
VGSꢀ=ꢀ0ꢀV,ꢀISꢀ=ꢀ5.7ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C  
VDDꢀ=ꢀ400ꢀV,ꢀIS0ꢀ=ꢀ5.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
diS/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9  
-
-
-
17  
39  
4.6  
-
-
-
ns  
VDDꢀ=ꢀ400ꢀV,ꢀIS0ꢀ=ꢀ5.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
diS/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9  
MOSFET forward recovery charge  
Qf  
nC  
A
MOSFET peak forward recovery  
current  
VDDꢀ=ꢀ400ꢀV,ꢀIS0ꢀ=ꢀ5.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
diS/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9  
Ifrm  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
100  
103  
102  
101  
100  
10-1  
10-2  
10-3  
80  
60  
40  
20  
0
1 µs  
10 µs  
100 µs  
1 ms  
10 ms  
DC  
0
25  
50  
75  
100  
125  
150  
175  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
102  
101  
100  
1 µs  
0.5  
0.2  
0.1  
10 µs  
100  
0.05  
0.02  
0.01  
100 µs  
single pulse  
10-1  
10-2  
10-3  
10-1  
1 ms  
10 ms  
DC  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
60  
60  
50  
40  
30  
20  
10  
0
20 V  
18 V  
50  
40  
30  
20  
10  
0
20 V  
18 V  
15 V  
12 V  
15 V  
12 V  
10 V  
8 V  
10 V  
8 V  
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=150ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.55  
2.0  
0.50  
0.45  
1.5  
1.0  
0.5  
10 V 12 V  
15 V  
18 V  
20 V  
0.40  
0.35  
0.30  
0.25  
0.20  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
IDꢀ[A]  
TJꢀ[°C]  
RDS(on)=f(ID);ꢀTj=150ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=5.7ꢀA;ꢀVGS=18ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
60  
20  
18  
16  
14  
12  
10  
8
50  
40  
30  
400 V  
175 °C  
20  
10  
0
6
25 °C  
4
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
1
2
3
4
5
6
7
8
9
10 11  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=5.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀTyp.ꢀreverseꢀcharacteristics  
Diagramꢀ12:ꢀTyp.ꢀreverseꢀcharacteristics  
102  
102  
25 °C  
101  
101  
175 °C  
25 °C  
175 °C  
100  
100  
10-1  
10-1  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VSDꢀ[V]  
VSDꢀ[V]  
ISD=f(VSD);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj  
ISD=f(VSD);ꢀVGS=18ꢀV;ꢀparameter:ꢀTj  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
Diagramꢀ13:ꢀAvalancheꢀenergy  
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage  
50  
690  
680  
670  
660  
650  
640  
630  
620  
45  
40  
35  
30  
25  
20  
15  
10  
5
0
25  
50  
75  
100  
125  
150  
175  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
TJꢀ[°C]  
TJꢀ[°C]  
EAS=f(Tj);ꢀID=1.8ꢀA;ꢀVDD=50ꢀV  
V(BR)DSS=f(Tj);ꢀID=0.17ꢀmA  
Diagramꢀ15:ꢀTyp.ꢀcapacitances  
Diagramꢀ16:ꢀTyp.ꢀCossꢀstoredꢀenergy  
104  
7
6
5
4
3
2
1
0
103  
102  
101  
100  
Ciss  
Coss  
Crss  
0
50 100 150 200 250 300 350 400 450 500  
0
50 100 150 200 250 300 350 400 450 500  
VDSꢀ[V]  
VDSꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Eoss=f(VDS)  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge  
35  
30  
25  
20  
15  
10  
5
0
0
50 100 150 200 250 300 350 400 450 500  
VDSꢀ[V]  
Qoss=f(VDS  
)
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ9ꢀꢀꢀꢀꢀBodyꢀdiodeꢀcharacteristicsꢀ(650VꢀCoolSiC)  
Test circuit for body diode characteristics  
Body diode recovery waveform  
VDS  
+
VDD  
VDS  
RG2  
IS  
I
SO
-
tfr  
IS  
VDD  
dIs / dt  
RG1  
Ifrm  
Qf  
Ifrm  
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(650VꢀCoolSiC)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VDD  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
RG  
toff  
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(650VꢀCoolSiC)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DSS  
VDD  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSIONS  
MIN.  
4.30  
0.00  
2.30  
0.50  
0.00  
0.40  
1.17  
9.05  
5.90  
9.80  
9.36  
0.00  
8.40  
MAX.  
4.50  
0.20  
2.50  
0.70  
0.15  
0.60  
1.37  
9.45  
6.10  
10.20  
9.56  
0.30  
8.60  
A
A1  
A2  
b
b1  
c
c1  
D
DOCUMENT NO.  
Z8B00189674  
D1  
E
E1  
E2  
E3  
e
REVISION  
01  
SCALE 5:1  
1.27  
H
15.00  
5mm  
0
1
2
3
4
L
4.20  
0.70  
1.70  
5.20  
1.30  
2.30  
L1  
L2  
L3  
P
EUROPEAN PROJECTION  
2.70  
0.35  
4.02  
2.03  
1.40  
0.00°  
0.55  
4.22  
2.23  
1.60  
8.00°  
Q
R
ISSUE DATE  
14.02.2020  
S
THETA  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7-12,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolSiCꢀM1ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolSiCꢀM1ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolSiCꢀM1ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2021-12-10  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMBG65R163M1H  
RevisionꢀHistory  
IMBG65R163M1H  
Revision:ꢀ2021-12-10,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2021-12-10  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2021ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2021-12-10  

相关型号：

IMBM-700

 VIA C7™/ Eden™ Processor, Up To 2.0 GHz
AAEON

IMBM-B75A

 Intel® 2nd/3rd Generation Core™ i7/ i5/ i3/ Processors
AAEON

IMBM-H110A

 Two Independent Display: HDMI x 2, VGA x 1, DVI-D x 1
AAEON

IMBM-H110A-A10

 Two Independent Display: HDMI x 2, VGA x 1, DVI-D x 1
AAEON

IMBM-H61B

 Micro-ATX Board with Intel 3rd/2nd Generation Core i7/ i5/ i3 CPU, 13 Serial Ports & 8 USB
AAEON

IMBM-H61B-A10

 Micro-ATX Board with Intel 3rd/2nd Generation Core i7/ i5/ i3 CPU, 13 Serial Ports & 8 USB
AAEON

IMBM-H81B

 Two Independent Display: VGA x 1, DVI-I Port x 1
AAEON

IMBM-H81B-A10

 Two Independent Display: VGA x 1, DVI-I Port x 1
AAEON

IMBM-Q67A

 Micro-ATX Industrial Motherboard with Intel 2nd Generation Core i7/ i5/ i3 Processor
AAEON

IMBM-Q67A-A10-G2

 Micro-ATX Industrial Motherboard with Intel 2nd Generation Core i7/ i5/ i3 Processor
AAEON

IMBR10100C

 SCHOTTKY BARRIER RECTIFIER
RECTRON

IMBR10150C

 SCHOTTKY BARRIER RECTIFIER
RECTRON
©2020 ICPDF网 联系我们和版权申明