IMW65R030M1H [INFINEON]
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMW65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。 此 SiC MOSFET 采用 TO247 3 引脚封装,以提供经济高效的性能。;型号: | IMW65R030M1H |
厂家: | Infineon |
描述: | CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMW65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。 此 SiC MOSFET 采用 TO247 3 引脚封装,以提供经济高效的性能。 半导体 |
文件: | 总15页 (文件大小:1406K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IMW65R030M1H
MOSFET
PG-TOꢀ247-3
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology
developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap
SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique
combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh
temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost
effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.
Tab
1
2
3
Features
•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents
•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQrr
•ꢀSuperiorꢀgateꢀoxideꢀreliability
•ꢀTj,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior
•ꢀLowerꢀRDS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature
•ꢀIncreasedꢀavalancheꢀcapability
Drain
Pin 2, Tab
•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ18V)
*1
Gate
Pin 1
Benefits
Source
Pin 3
*1: Internal body diode
•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse
•ꢀEaseꢀofꢀuseꢀandꢀintegration
•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation
•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability
•ꢀEfficiencyꢀimprovement
•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity
Potentialꢀapplications
•ꢀSMPS
•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)
•ꢀSolarꢀPVꢀinverters
•ꢀEVꢀchargingꢀinfrastructure
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation
•ꢀClassꢀDꢀamplifiers
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDSꢀ@ꢀTJꢀ=ꢀ25ꢀ°C
RDS(on),typ
Value
650
30
Unit
V
mΩ
mΩ
nC
A
RDS(on),max
42
QG,typ
48
ID,pulse
143
114
17.2
Qossꢀ@ꢀ400ꢀV
Eossꢀ@ꢀ400ꢀV
nC
µJ
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IMW65R030M1H
PG-TO247-3
65R030M1
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
58
41
TCꢀ=ꢀ25ꢀ°C
A
Continuous drain current1)
Pulsed drain current2)
ID
TCꢀ=ꢀ100ꢀ°C
ID,pulse
EAS
-
-
-
-
143
251
A
TCꢀ=ꢀ25ꢀ°C
IDꢀ=ꢀ9.4ꢀA,ꢀVDDꢀ=ꢀ50ꢀV,ꢀLꢀ=ꢀ5.7ꢀmH;
see table 10
Avalanche energy, single pulse
mJ
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFETꢀdv/dtꢀruggedness
Gate source voltage (static)
EAR
IAS
-
-
-
-
-
1.26
9.4
200
20
mJ
A
IDꢀ=ꢀ9.4ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ10
-
-
dv/dt
VGS
-
V/ns VDSꢀ=ꢀ0...400ꢀV
-2
V
V
static
-
Gate source voltage (recommended
driving voltage)
VGS
VGS
0
-
-
18
23
tpulse,negativeꢀ<=ꢀ15ꢀns
tpulse,positiveꢀ<=ꢀ1%ꢀdutyꢀcycle/fsw
Gate source voltage (dynamic)
-5
V
Power dissipation
Ptot
Tstg
TJ
-
-
-
-
-
-
-
-
197
150
175
60
W
TCꢀ=ꢀ25ꢀ°C
Storage temperature
-55
°C
°C
-
-
Operating junction temperature
-55
Mounting torque
-
-
-
-
-
Ncm M3 and M3.5 screws
Continuous diode forward current1)
Diode pulse current2)
IS
58
A
A
V
TCꢀ=ꢀ25ꢀ°C
IS,pulse
VISO
143
n.a.
TCꢀ=ꢀ25ꢀ°C
Insulation withstand voltage
Vrms,ꢀTCꢀ=ꢀ25ꢀ°C,ꢀtꢀ=ꢀ1ꢀmin
1)ꢀLimitedꢀbyꢀTJ,max
2)ꢀPulseꢀwidthꢀtpꢀlimitedꢀbyꢀTJ,max
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.76
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage1)
V(BR)DSS
V(GS)th
V
V
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ0.88ꢀmA
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ8.8ꢀmA
4.5
5.7
-
-
1
3
150
-
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25ꢀ°C
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ175ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0ꢀV
-
-
0.030 0.042
0.042
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,ꢀTJꢀ=175ꢀ°C
RDS(on)
RG
-
-
5.0
-
Ω
fꢀ=ꢀ1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1643
18
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
Input capacitance
Reverse capacitance
Output capacitance2)
Output charge2)
Ciss
Crss
Coss
Qoss
-
-
-
-
pF
pF
pF
nC
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
calculationꢀbasedꢀonꢀCoss
-
189
246
148
114
Effective output capacitance, energy
related3)
VGSꢀ=ꢀ0ꢀV,
VDSꢀ=ꢀ0...400ꢀV
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
214
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
Effective output capacitance, time
related4)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0ꢀV,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VDSꢀ=ꢀ0...400ꢀV
284
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
11.6
11.3
19.7
12.0
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9
1)ꢀTestedꢀafterꢀ1ꢀmsꢀpulseꢀatꢀVGSꢀ=ꢀ+20ꢀV
2)ꢀMaximumꢀspecificationꢀisꢀdefinedꢀbyꢀcalculatedꢀsixꢀsigmaꢀupperꢀconfidenceꢀbound
3)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV
4)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
-
13
-
nC
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
-
-
11
48
-
-
nC
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
4.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGSꢀ=ꢀ0ꢀV,ꢀIFꢀ=ꢀ29.5ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8
-
-
-
37
-
-
-
ns
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8
Reverse recovery charge
Qrr
Irrm
186
10.0
nC
A
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
210
103
102
101
100
10-1
10-2
10-3
1 µs
180
150
120
90
10 µs
100 µs
1 ms
10 ms
DC
60
30
0
0
25
50
75
100
125
150
175
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
102
101
1 µs
0.5
0.2
10 µs
100 µs
100
10-1
0.1
0.05
0.02
1 ms
10-1
10-2
10-3
10 ms
DC
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
250
250
200
150
100
50
20 V
18 V
20 V
18 V
200
150
100
50
15 V
12 V
15 V
12 V
10 V
8 V
10 V
8 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.110
2.0
20 V
15 V
18 V
10 V
0.090
0.070
0.050
0.030
12 V
1.5
1.0
0.5
0
50
100
150
200
250
-50
-25
0
25
50
75
100 125 150 175
IDꢀ[A]
TJꢀ[°C]
RDS(on)=f(ID);ꢀTj=150ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=29.5ꢀA;ꢀVGS=18ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
250
20
18
16
14
12
10
8
200
150
100
50
400 V
6
4
150 °C
25 °C
2
0
0
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=29.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀTyp.ꢀchannelꢀreverseꢀcharacteristics
103
103
102
102
25 °C
150 °C
25 °C
101
101
150 °C
100
100
10-1
10-1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSDꢀ[V]
VSDꢀ[V]
IF=f(VSD);ꢀparameter:ꢀTj
IF=f(VSD);ꢀVGS=18ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
275
690
680
670
660
650
640
630
250
225
200
175
150
125
100
75
50
25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100 125 150 175
TJꢀ[°C]
TJꢀ[°C]
EAS=f(Tj);ꢀID=9.4ꢀA;ꢀVDD=50ꢀV
VBR(DSS)=f(Tj);ꢀID=0.88ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ16:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
30
25
20
15
10
5
Ciss
103
102
101
Coss
Crss
0
0
100
200
300
400
500
0
50 100 150 200 250 300 350 400 450 500
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
140
120
100
80
60
40
20
0
0
50 100 150 200 250 300 350 400 450 500
VDSꢀ[V]
Qoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristicsꢀ(SiC)
Test circuit for diode characteristics
Diode recovery waveform
+
RG2
VDS
-
IF
RG1
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(SiC)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
RG
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(SiC)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
MAX.
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
A
A1
A2
b
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4
5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolSiCꢀM1ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolSiCꢀM1ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolSiCꢀM1ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2021-03-17
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMW65R030M1H
RevisionꢀHistory
IMW65R030M1H
Revision:ꢀ2021-03-17,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2021-03-17
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2021-03-17
相关型号:
IMW65R039M1H
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性,从而增强了设备性能、稳健性和易用性等独特优势。IMW65R039M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术,并经过优化,在毫不折衷的情况下,在应用中实现最低损耗,并在运行中实现最佳可靠性。 此 SiC MOSFET 采用 TO247 3 引脚封装,以提供经济高效的性能。
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