IMZ120R140M1H [INFINEON]
IMZ120R140M1H是采用TO247-4封装的1200 V、140 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽半导体工艺，该工艺经过优化，兼具性能与可靠性。 与IGBT和MOSFET等传统硅（Si）基开关相比，SiC MOSFET具有诸多优势，例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、 独立于温度的低开关损耗以及无阈值导通特性。因此，CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。;
| 型号： | IMZ120R140M1H |
| 厂家： | 
Infineon |
| 描述： | IMZ120R140M1H是采用TO247-4封装的1200 V、140 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽半导体工艺，该工艺经过优化，兼具性能与可靠性。 与IGBT和MOSFET等传统硅（Si）基开关相比，SiC MOSFET具有诸多优势，例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、 独立于温度的低开关损耗以及无阈值导通特性。因此，CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。 开关 栅 DC-DC转换器 双极性晶体管 功率因数校正 二极管 栅极 半导体 |
| 文件： | 总17页 (文件大小：1272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMZ120R140M1H
IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
Drain
pin 1
Very low switching losses
Gate
pin 4
Threshold-free on state characteristic
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Sense
pin 3
Source
pin 2
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Sense pin for optimized switching performance
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Energy generation
o
Solar string inverter and solar optimizer
Industrial power supplies
o
o
Industrial UPS
Industrial SMPS
Infrastructure – Charge
Charger
o
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Type
Key Performance and Package Parameters
VDS
ID
RDS(on)
Tvj = 25°C, ID = 6A, VGS = 18V
Tvj,max
Marking
Package
TC = 25°C, Rth(j-c,max)
IMZ120R140M1H 1200V
19A
140mΩ
175°C
12M1H140
PG-TO247-4
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
2.2
2020-12-11
www.infineon.com
IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits......................................................................................................................................... 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 4
3
Electrical Characteristics ........................................................................................................ 5
Static characteristics...............................................................................................................................5
Dynamic characteristics..........................................................................................................................6
Switching characteristics........................................................................................................................7
3.1
3.2
3.3
4
5
6
Electrical characteristic diagrams ............................................................................................ 8
Package drawing...................................................................................................................14
Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
V
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
ID
19
13
A
A
1
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
ID,pulse
32
DC body diode forward current for Rth(j-c,max)
,
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
A
A
V
21
12
1
Pulsed body diode current, tp limited by Tvjmax
Gate-source voltage2
ISD,pulse
32
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Short-circuit withstand time
VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C
Power dissipation, limited by Tvjmax
TC = 25°C
VGS
VGS,on
VGS,off
-7… 23
15… 18
0
µs
W
tSC
3
Ptot
94
47
TC = 100°C
°C
°C
Virtual junction temperature
Storage temperature
Tvj
-55… 175
-55… 150
Tstg
Soldering temperature,
wave soldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque, M3 screw
Tsold
260
0.6
°C
M
Nm
Maximum of mounting processes: 3
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Value
Unit
Symbol Conditions
min.
typ.
1.2
max.
1.6
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
-
-
K/W
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
-
62
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance
RDS(on)
VGS = 18V, ID = 6A,
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
VGS = 15V, ID = 6A,
Tvj = 25°C
-
-
-
140
178
265
189
-
-
mΩ
-
180
239
Body diode forward
voltage
VSD
VGS = 0V, ISD = 6A
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
-
-
-
4.1
4.0
3.9
5.2
-
-
V
Gate-source threshold
voltage
VGS(th)
(tested after 1 ms pulse at
VGS = 20V)
ID = 2.5mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
V
3.5
-
4.5
3.6
5.7
-
Zero gate voltage drain
current
IDSS
VGS = 0V, VDS = 1200V
Tvj = 25°C
Tvj = 175°C
-
-
-
-
-
-
0.3
0.9
-
140
-
µA
Gate-source leakage
current
IGSS
VGS = 23V, VDS = 0V
VGS = -7V, VDS = 0V
VDS = 20V, ID = 6A
f = 1MHz, VAC = 25mV
100
nA
nA
S
-
-100
Transconductance
gfs
3
-
-
Internal gate resistance
RG,int
14
Ω
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
454
25
max.
Input capacitance
Output capacitance
Reverse capacitance
Coss stored energy
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Eoss
QG
pF
µJ
nC
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
3
9
13
Total gate charge
VDD = 800V, ID = 6A,
VGS = 0/18V, turn-on pulse
4
3
Gate to source charge
Gate to drain charge
QGS,pl
QGD
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 4
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 6A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
5
-
-
-
-
-
-
-
2
ns
µJ
Turn-off delay time
Fall time
10.3
11.6
62
12
74
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 6A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
100
2
-
-
Diode peak reverse
recovery current
Irrm
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 6A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
5
-
-
-
-
-
-
-
4.4
ns
µJ
Turn-off delay time
Fall time
10.3
11.6
88
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
13.5
101.5
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 6A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
125
3
-
-
Diode peak reverse
recovery current
Irrm
4 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
not for linear use
Rth(j-c,max)
Rth(j-c,typ)
0
0
25 50 75 100 125 150 175
0
400
800
1200
TC [ C]
VDS [V]
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
Figure 1
Safe operating area (SOA)
(VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C)
30
20
10
30
20
10
Rth(j-c,typ)
Rth(j-c,max)
Rth(j-c,typ)
Rth(j-c,max)
0
0
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
TC [ C]
TC [ C]
Figure 3
Maximum DC drain to source current as
a function of case temperature limited
by bond wire (IDS = f(TC))
Figure 4
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
50
6
5
4
3
2
1
0
25°C
175°C
40
30
20
10
0
-40
10
60
110
160
0
5
10
15
20
Tvj [ C]
VGS [V]
Figure 6
Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 2.5mA, VGS = VDS)
Figure 5
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
50
50
20V
18V
16V
15V
14V
12V
10V
8V
20V
18V
16V
15V
14V
12V
10V
8V
40
30
20
10
0
40
30
20
10
0
6V
6V
0
4
8
12
16
20
0
4
8
12
16
20
VDS [V]
VDS [V]
Figure 7
Typical output characteristic, VGS as
parameter
Figure 8
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
350
18
16
14
12
10
8
VGS = 18V
300
VGS = 15V
250
200
150
100
50
6
4
2
0
0
-40
10
60
110 160
0
2
4
6
8
10 12
Tvj [ C]
QG [nC]
Figure 9
Typical on-resistance as a function of
junction temperature
(RDS(on) = f(Tvj), IDS = 6A)
Figure 10 Typical gate charge
(VGS = f(QG), IDS = 6A, VDS = 800V, turn-on
pulse)
6
5
4
3
2
1
0
1000
100
10
1
Ciss
Coss
Crss
1
10
100
1000
-40
10
60
110
160
VDS[V]
Tvj [ C]
Figure 11 Typical capacitance as a function of
drain-source voltage
Figure 12 Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=6A)
(C = f(VDS), VGS = 0V, f = 1MHz)
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
15
15
12
9
VGS=18V
VGS=18V
VGS=15V
VGS=15V
12
9
6
6
VGS=0V
VGS=0V
VGS=-2V
VGS=-2V
3
3
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VSD [V]
VSD [V]
Figure 14 Typical body diode forward current as
function of forward voltage, VGS as
parameter
Figure 13 Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
160
200
Etot
Etot
Eon
Eon
Eoff
120
150
Eoff
80
40
0
100
50
0
25
75
125
Tvj [ C]
175
0
2
4
6
8
10 12
ID [A]
Figure 15 Typical switching energy losses as a
function of junction temperature
Figure 16 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
(E = f(Tvj), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, ID = 6A, ind. load, test circuit in
Fig. E, diode: body diode at VGS = 0V)
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
400
90
80
70
60
50
40
30
20
10
0
Etot
td(on)
tr
Eon
Eoff
td(off)
tf
300
200
100
0
0
20 40 60 80 100 120
RG [Ohm]
0
20 40 60 80 100 120
RG [Ohm]
Figure 18 Typical switching times as a function of
gate resistor
Figure 17 Typical switching energy losses as a
function of gate resistance
(t = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 6A, Tvj = 175°C, ind. load, test circuit in
Fig. E, diode: body diode at VGS = 0V)
(E = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 6A, Tvj = 175°C, ind. load, test circuit in
Fig. E, diode: body diode at VGS = 0V)
0.4
0.3
0.2
10
175°C
25°C
8
6
4
2
0
0.1
175°C
25°C
0.0
0
2000
4000
6000
0
2000
4000
6000
diF /dt[A/µs]
diF /dt[A/µs]
Figure 19 Typical reverse recovery charge as a
function of diode current slope
(Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 6A, ind. load, test circuit in Fig.E, body
diode at VGS = 0V)
Figure 20 Typical reverse recovery current as a
function of diode current slope
(Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 6A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
10.00
1.00
0.10
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
i:
1
2
3
4
ri: [K/W] 8.65E-02
τi: [s]
4.18E-01
3.81E-04
6.62E-01
2.03E-03
4.34E-01
1.26E-02
1.26E-05
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21 Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
PG-TO247-4
Figure 22
Package drawing
Datasheet
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IMZ120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 23
Test conditions
Datasheet
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IMZ120R140M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
2.0
2.1
2019-08-22
2019-12-10
Final Datasheet
Move the short circuit time from dynamic characteristics table 5 to
maximum ratings table 2.
Update the Figure 12, 13, 14 the body diode forward voltage.
2.2
2020-12-11
Correction of circuit symbol on page 1
Datasheet
16 of 17
2.2
2020-12-11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2019.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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