IPA045N10N3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | IPA045N10N3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总10页 (文件大小：1660K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPA045N10N3ꢀG
MOSFET
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
TO-220-FP
Features
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•Halogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 2
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
100
4.5
Unit
VDS
V
Gate
Pin 1
RDS(on),max
ID
mΩ
A
Source
Pin 3
64
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPA045N10N3 G
PG-TO220-FP
045N10N
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
64
45
TC=25ꢀ°C1)
TC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current1)
Avalanche energy, single pulse
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
256
540
20
A
TC=25ꢀ°C
-
mJ
V
ID=64ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
39
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction-case
RthJC
RthJA
-
3.8
K/W
K/W
-
-
Thermal resistance, juntion-ambient,
Leaded
-
-
80
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.7
3.5
VDS=VGS,ꢀID=150ꢀµA
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
3.9
4.7
4.5
7.7
VGS=10ꢀV,ꢀID=64ꢀA
VGS=6ꢀV,ꢀID=32ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.4
-
-
Ω
-
Transconductance
60
119
S
|VDS|>2|ID|RDS(on)max,ꢀID=64ꢀA
1) See Diagram 3
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
6320 8410 pF
1100 1460 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
41
25
-
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=64ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=64ꢀA,
RG,ext=1.6ꢀΩ
47
50
15
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=64ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=64ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
28
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=64ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=64ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=64ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=64ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=64ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀVGS=0ꢀV
Qgd
16
-
Qsw
Qg
25
-
88
117
-
Vplateau
Qoss
4.4
117
155
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
64
256
1
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.9
69
V
VGS=0ꢀV,ꢀIF=64ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=64ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=64ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
-
ns
nC
Qrr
140
-
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
50
70
60
50
40
30
20
10
0
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
100 µs
1 ms
0.5
102
100
0.2
0.1
101
0.05
10 ms
0.02
10-1
DC
100
0.01
single pulse
10-1
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
101
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
250
10
10 V
6 V
7.5 V
5.5 V
200
8
4.5 V
5 V
150
6
5 V
6 V
7.5 V
100
4
10 V
4.5 V
50
2
0
0
0
1
2
3
4
5
0
20
40
60
80
100
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
200
160
150
100
120
80
40
0
25 °C
50
175 °C
0
0
2
4
6
8
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
10
4.0
3.5
3.0
8
1500 µA
2.5
2.0
1.5
1.0
0.5
0.0
6
150 µA
98 %
typ
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=64ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
Ciss
25 °C
175 °C
25 °C, 98%
175 °C, 98%
Coss
103
102
101
102
101
100
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
25 °C
8
6
100 °C
80 V
50 V
150 °C
20 V
101
4
2
0
100
100
101
102
103
0
20
40
60
80
100
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=64ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
110
105
100
95
90
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-FP,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2016-01-22
OptiMOSTM3ꢀPower-Transistor,ꢀ100ꢀV
IPA045N10N3ꢀG
RevisionꢀHistory
IPA045N10N3 G
Revision:ꢀ2016-01-22,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
2.4
Subjects (major changes since last revision)
Insert RthJA
2016-01-22
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2016-01-22
相关型号：
IPA057N06N3G
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPA057N06N3GXKSA1
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPA057N08N3GXKSA1
Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
IPA060N06NXKSA1
Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
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