IPA50R140CPXKSA1 [INFINEON]
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN;型号: | IPA50R140CPXKSA1 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:606K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPA50R140CP
CoolMOSTM Power Transistor
Features
Product Summary
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R =L"a`#%_Sj
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-1
O
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W )EM;IJ <?=KH; E< C ;H?J / , + N . Y
"
`<
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)#
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CoolMOS CP is designed for:
W % 7H: 7D: IE<JIM?J9>?D= 0* -0 <EH I;HL;H FEM;H IKFFB?;I
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Type
Package
Marking
BI9.)K*-)<I
I@&MH++)?I
.K*-)I
Maximum ratings, 7J T \ꢇ ꢀ ꢈ Z ꢆ KDB;II EJ>;HM?I; IF;9?<?;:
Value
+,
Parameter
Symbol Conditions
Unit
EDJ?DKEKI : H7?D 9KHH;DJ*#
I =
T <ꢇ ꢀ ꢈ Z
9
*.
T <ꢇ ꢉ ꢁ ꢁ Z
-KBI;: : H7?D 9KHH;DJ+#
./
I =%bg^eW
E 9L
E 9K
I 9K
T <ꢇ ꢀ ꢈ Z
I =ꢇ ꢊ ꢋꢌ ꢅ ꢆ V ==ꢇ ꢈ ꢁ 3
I =ꢇ ꢊ ꢋꢌ ꢅ ꢆ V ==ꢇ ꢈ ꢁ 3
ꢅ L7B7D9>; ;D;H=Oꢆ I?D=B; FKBI;
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9
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+#%,#
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V
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: v (Vt
O(`e
O
V @L
w+)
w,)
$ 7J; IEKH9; LEBJ7=;
efSf[U
ꢅ ꢎ<ꢏ ꢉ % Pꢐ
P faf
T <ꢇ ꢀ ꢈ Z
,-
ꢃꢈ ꢈ ꢋꢋꢋ ꢉ ꢈ ꢁ
ꢈ ꢁ
-EM;H : ?II?F7J?ED
P
T \ꢆ T efY
, F;H7J?D= 7D: IJEH7=; J;C F;H7JKH;
* EKDJ?D= JEHGK;
v<
* ꢀ ꢋꢈ I9H;MI
F7=; ꢉ
+ 9C
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ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
Maximum ratings, 7J T \ꢇ ꢀ ꢈ Z ꢆ KDB;II EJ>;HM?I; IF;9?<?;:
Value
*-
Parameter
Symbol Conditions
Unit
EDJ?DKEKI : ?E: ; <EHM7H: 9KHH;DJ*#
!?E: ; FKBI; 9KHH;DJ+#
/ ;L;HI; : ?E: ; : v (Vt -#
I L
9
T <ꢇ ꢀ ꢈ Z
I L%bg^eW
./
Vv (Vt
*.
O(`e
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R fZC<
1>;HC 7B H;I?IJ7D9;ꢆ @KD9J?ED ꢃ 97I;
&
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&
&
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R fZC9
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S_T[W`f
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<HEC 97I; <EH ꢉ ꢁ I
T ea^V
&
&
+/) v<
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Electrical characteristics, 7J T \ꢇ ꢀ ꢈ Z ꢆ KDB;II EJ>;HM?I; IF;9?<?;:
Static characteristics
V ";K#=LL
V
V
@Lꢇ ꢁ 3 ꢆ I =ꢇ ꢀ ꢈ ꢁ \ ꢅ
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$ 7J; J>H;I>EB: LEBJ7=;
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&
&
O
V @L"fZ#
,
,'.
V
=Lꢇ ꢈ ꢁ ꢁ 3 ꢆ V @Lꢇ ꢁ 3 ꢆ
I =LL
6;HE =7J; LEBJ7=; : H7?D 9KHH;DJ
&
&
+
&
x9
T \ꢇ ꢀ ꢈ Z
V
=Lꢇ ꢈ ꢁ ꢁ 3 ꢆ V @Lꢇ ꢁ 3 ꢆ
&
&
&
+)
&
T \ꢇ ꢉ ꢈ ꢁ Z
I @LL
V
V
@Lꢇ ꢀ ꢁ 3 ꢆ V =Lꢇ ꢁ 3
@Lꢇ ꢉ ꢁ 3 ꢆ I =ꢇ ꢉ ꢍ ꢅ ꢆ
$ 7J;ꢃIEKH9; B;7A7=; 9KHH;DJ
*)) `9
R =L"a`#
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)'*,
)'*-
"
T \ꢇ ꢀ ꢈ Z
V
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&
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&
T \ꢇ ꢉ ꢈ ꢁ Z
R @
$ 7J; H;I?IJ7D9;
f ꢇ ꢉ * % Pꢆ EF;D : H7?D
ꢃ
ꢀ ꢋꢀ
ꢃ
"
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F7=; ꢀ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
&DFKJ 97F79?J7D9;
C [ee
&
&
+.-)
**)
&
&
b?
V
@Lꢇ ꢁ 3 ꢆ V =Lꢇ ꢉ ꢁ ꢁ 3 ꢆ
f ꢇ ꢉ * % P
C aee
, KJFKJ 97F79?J7D9;
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C a"Wd#
&
&
**)
+,)
&
&
V @Lꢇ ꢁ 3 ꢆ V =Lꢇ ꢁ 3
JE ꢍ ꢁ ꢁ 3
" <<;9J?L; EKJFKJ 97F79?J7D9;ꢆ J?C ;
dW^SfWV/#
C a"fd#
t V"a`#
t d
t V"aXX#
t X
1KHDꢃED : ;B7O J?C ;
/ ?I; J?C ;
&
&
&
&
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*-
1)
1')
&
&
&
&
`e
V
V
==ꢇ ꢍ ꢁ ꢁ 3 ꢆ
@Lꢇ ꢉ ꢁ 3 ꢆ I =ꢇ ꢉ ꢍ ꢅ ꢆ
1KHDꢃE<< : ;B7O J?C ;
# 7BB J?C ;
R @ꢇ ꢉ ꢀ ꢋꢀ "
$ 7J; >7H=; >7H79J;H?IJ?9I
$ 7J; JE IEKH9; 9>7H=;
$ 7J; JE : H7?D 9>7H=;
$ 7J; 9>7H=; JEJ7B
Q Ye
&
&
&
&
**
*.
-1
.'+
&
&
`<
Q YV
V
V
==ꢇ ꢍ ꢁ ꢁ 3 ꢆ I =ꢇ ꢉ ꢍ ꢅ ꢆ
@Lꢇ ꢁ JE ꢉ ꢁ 3
Q Y
/-
&
V b^SfWSg
$ 7J; FB7J;7K LEBJ7=;
Reverse Diode
O
O
V
@Lꢇ ꢁ 3 ꢆ I ?ꢇ ꢉ ꢍ ꢅ ꢆ
V L=
!?E: ; <EHM7H: LEBJ7=;
&
)'2
*'+
T \ꢇ ꢀ ꢈ Z
t dd
/ ;L;HI; H;9EL;HO J?C ;
/ ;L;HI; H;9EL;HO 9>7H=;
-;7A H;L;HI; H;9EL;HO 9KHH;DJ
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&
&
&
-))
.'/
+/
&
&
&
`e
x<
9
V Kꢇ ꢍ ꢁ ꢁ 3 ꢆ I ?6I Lꢆ
Vi ?(Vt ꢇ ꢉ ꢁ ꢁ ꢅ ꢂ\ I
Q dd
I dd_
ꢉ ꢐ )?C ?J;: EDBO 8O 1
\%_Sj
+# -KBI; M?: J> t b B?C ?J;: 8O T \%_Sj
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ꢍ ꢐ
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.# C a"fd# ?I 7 <?N;: 97F79?J7D9; J>7J =?L;I J>; I7C ; 9>7H=?D= J?C ; 7IC aee M>?B; V =L ?I H?I?D= <HEC ꢁ JE ꢒ ꢁ ꢓ V =LL'
/# C a"Wd# ?I 7 <?N;: 97F79?J7D9; J>7J =?L;I J>; I7C ; IJEH;: ;D;H=O 7IC aee M>?B; V =L ?I H?I?D= <HEC ꢁ JE ꢒ ꢁ ꢓ V =LL'
0# C a"fd# ?I 7 <?N;: 97F79?J7D9; J>7J =?L;I J>; I7C ; 9>7H=?D= J?C ; 7IC aee M>?B; V =L ?I H?I?D= <HEC ꢁ JE ꢒ ꢁ ꢓ V =LL'
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢌ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
1 Power dissipation
2 Safe operating area
I =6X"V =Lꢐꢄ T <ꢇ ꢀ ꢈ Z ꢄ D 6)
F7H7C ;J;Hꢔ t b
P
faf6X"T <#
102
35
30
25
20
15
10
5
ꢉ \ I
ꢉ ꢁ \ I
B?C ?J;: 8O EDꢃIJ7J;
dWe[efS`UW
ꢉ ꢁ ꢁ \ I
101
ꢉ C I
ꢉ ꢁ C I
100
=<
10-1
0
0
100
101
102
103
50
100
150
T C [°C]
V DS [V]
3 Max. transient thermal impedance
R"fZC<#6X"fbꢐꢄ
4 Typ. output characteristics
I =6X"V =Lꢐꢄ T \ꢇ ꢀ ꢈ Z
F7H7C ;J;Hꢔ D=t b(T
F7H7C ;J;Hꢔ V @L
101
75
ꢀ ꢁ 3
ꢉ ꢁ 3
60
ꢒ 3
)'.
ꢕ 3
100
)'+
45
)'*
ꢑ 3
)').
30
15
0
10-1
)')+
ꢈ ꢋꢈ 3
)')*
ꢈ 3
I?D=B; FKBI;
ꢍ ꢋꢈ 3
10-2
10-5
10-4
10-3
10-2
10-1
100
101
0
5
10
V DS [V]
15
20
t p [s]
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢍ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
5 Typ. output characteristics
I =6X"V =Lꢐꢄ T \ꢇ ꢉ ꢈ ꢁ Z
F7H7C ;J;Hꢔ V @L
6 Typ. drain-source on-state resistance
=L"a`#6X"I =ꢐꢄ T \ꢇ ꢉ ꢈ ꢁ Z
R
F7H7C ;J;Hꢔ V @L
0.8
50
40
30
20
10
0
ꢀ ꢁ 3
ꢕ 3
ꢉ ꢁ 3
0.7
0.6
0.5
0.4
0.3
0.2
ꢒ 3
ꢑ ꢋꢈ 3
ꢕ 3
ꢉ ꢁ 3
ꢑ 3
ꢑ 3
ꢈ ꢋꢈ 3
ꢈ ꢋꢈ 3
ꢈ 3
ꢍ ꢋꢈ 3
0
10
20
30
I D [A]
40
50
60
0
5
10
15
20
25
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I =6X"V @Lꢐꢄ QV =Lm7+mI =mR =L"a`#_Sj
F7H7C ;J;Hꢔ T \
R
=L"a`#6X"T \ꢐꢄ I =ꢇ ꢉ ꢍ ꢅ ꢄ V @Lꢇ ꢉ ꢁ 3
0.35
0.3
90
75
60
45
30
15
0
ꢀ ꢈ Z
0.25
ꢊ ꢒ ꢓ
ꢉ ꢈ ꢁ Z
0.2
fkb
0.15
0.1
0.05
-60
-30
0
30
60
90
120 150 180
0
3
5
8
10
T j [°C]
V GS [V]
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢈ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
9 Typ. gate charge
@L6X"Q YSfWꢐꢄ I =ꢇ ꢉ ꢍ ꢅ FKBI;:
10 Forward characteristics of reverse diode
I ?6X"V L=
V
#
F7H7C ;J;Hꢔ V ==
F7H7C ;J;Hꢔ T \
102
10
ꢀ ꢈ Z ꢆ ꢊ ꢒ ꢓ
8
6
4
2
ꢉ ꢁ ꢁ 3
ꢉ ꢈ ꢁ Z ꢆ ꢊ ꢒ ꢓ
101
ꢉ ꢈ ꢁ Z
ꢍ ꢁ ꢁ 3
ꢀ ꢈ Z
100
10-1
0
0
0
0.5
1
1.5
2
10
20
30
40
50
Q gate [nC]
V SD [V]
11 Avalanche energy
9L6X"T \ꢐꢄ I =ꢇ ꢊ ꢋꢌ ꢅ ꢄ V ==ꢇ ꢈ ꢁ 3
12 Drain-source breakdown voltage
E
V
;K"=LL#6X"T \ꢐꢄ I =ꢇ ꢁ ꢋꢀ ꢈ C ꢅ
580
560
540
520
500
480
460
440
700
600
500
400
300
200
100
0
-60
-20
20
60
100
140
180
25
75
125
175
T j [°C]
T j [°C]
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢑ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
13 Typ. capacitances
14 Typ. Coss stored energy
C 6X"V =Lꢐꢄ V @Lꢇ ꢁ 3 ꢄ f ꢇ ꢉ * % P
E aee= X(V =L)
105
12
10
8
104
<[ee
103
6
<aee
102
4
101
2
<dee
100
0
0
0
100
200
300
400
500
100
200
300
400
500
V DS [V]
V DS [V]
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢕ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
Definition of diode switching characteristics
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢒ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute)
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢊ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
IPA50R140CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
/ ;Lꢋ ꢀ ꢋꢉ
F7=; ꢉ ꢁ
ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ
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