IPA60R125CP [INFINEON]
CoolMOS Power Transistor; 的CoolMOS功率晶体管
| 型号： | IPA60R125CP |
| 厂家： | 
Infineon |
| 描述： | CoolMOS Power Transistor |
| 文件： | 总10页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPA60R125CP
CoolMOSTM Power Transistor
Features
Product Summary
DS @ Tj,max
R DS(on),max
Q g,typ
V
650
0.125
53
V
• Worldwide best RDS,on in TO220 Fullpak
• Ultra low gate charge
Ω
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO220-3-31
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
Package
Ordering Code
Marking
6R125P
IPA60R125CP
PG-TO220-3-31 SP000095275
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
25
Parameter
Symbol Conditions
Unit
Continuous drain current2)
I D
T C=25 °C
A
16
T C=100 °C
Pulsed drain current3)
82
I D,pulse
E AS
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
708
1.1
mJ
3),4)
3),4)
E AR
I AR
11
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0...480 V
50
dv /dt
V GS
V/ns
V
±20
±30
35
static
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
T j, T stg
-55 ... 150
50
Operating and storage temperature
Mounting torque
°C
M2.5 screws
page 1
Ncm
Rev. 1.3
2005-12-22
IPA60R125CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
25
Parameter
Symbol Conditions
Unit
Continuous diode forward current2)
Diode pulse current3)
Reverse diode dv /dt 5)
I S
A
T C=25 °C
I S,pulse
82
dv /dt
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
3.6
80
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=1.1 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
-
-
V
3
3.5
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
2
-
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
20
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=16 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.11
0.125
Ω
T j=25 °C
V
GS=10 V, I D=16 A,
-
-
0.30
2.1
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 1.3
page 2
2005-12-22
IPA60R125CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
-
-
2500
120
-
-
pF
ns
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Output capacitance
Effective output capacitance, energy
C o(er)
-
-
110
300
-
-
related6)
V
GS=0 V, V DS=0 V
Effective output capacitance, time
to 480 V
C o(tr)
related7)
t d(on)
t r
t d(off)
t f
Turn-on delay time
-
-
-
-
15
5
-
-
-
-
V
V
DD=400 V,
GS=10 V, I D=16 A,
Rise time
Turn-off delay time
Fall time
50
5
R G=3.3 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
12
18
53
5.0
-
-
nC
Q gd
V
V
DD=400 V, I D=16 A,
GS=0 to 10 V
Q g
70
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=16 A,
V SD
Diode forward voltage
-
0.9
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
430
9
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
42
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5)
I
SD
<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low-side and high side switch.
6)
7)
C
C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Rev. 1.3
page 3
2005-12-22
IPA60R125CP
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
40
limited by on-state
resistance
1 µs
10 µs
100 µs
1 ms
30
20
10
101
10 ms
100
DC
0
0
10-1
40
80
120
160
100
101
102
103
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
120
105
90
75
60
45
30
15
0
20 V
8 V
10 V
0.5
100
0.2
7 V
0.1
0.05
6 V
0.02
10-1
5.5 V
0.01
5 V
4.5 V
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
0
5
10
15
20
V
DS [V]
t
p [s]
Rev. 1.3
page 4
2005-12-22
IPA60R125CP
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
R
parameter: V GS
0.5
6 V
50
40
30
20
10
0
8 V
5 V
5.5 V
10 V
7 V
6 V
20 V
0.4
0.3
0.2
0.1
5.5 V
6.5 V
7 V
20 V
5 V
4.5 V
0
0
10
20
30
40
50
0
5
10
15
20
I
D [A]
V
DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=16 A; V GS=10 V
0.3
0.25
0.2
120
80
40
0
C °25
98 %
0.15
typ
C °150
0.1
0.05
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 1.3
page 5
2005-12-22
IPA60R125CP
9 Typ. gate charge
GS=f(Q gate); I D=16 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
9
8
7
6
5
4
3
2
1
0
25 °C, 98%
150 °C, 98%
25 °C
120 V
400 V
150 °C
101
100
10-1
0
0
10
20
30
40
50
60
0.5
1
1.5
2
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=11 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
750
700
660
620
580
540
500
250
0
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 1.3
page 6
2005-12-22
IPA60R125CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
104
103
102
101
100
20
16
12
8
Ciss
Coss
4
Crss
0
0
100
200
300
400
500
600
0
50
100
DS [V]
150
200
V
DS [V]
V
Rev. 1.3
page 7
2005-12-22
IPA60R125CP
Definition of diode switching characteristics
Rev. 1.3
page 8
2005-12-22
IPA60R125CP
PG-TO220-3-31: Outline/ Fully isolated package (2500VAC; 1 minute)
Rev. 1.3
page 9
2005-12-22
IPA60R125CP
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 10
2005-12-22
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