IPA65R045C7 [INFINEON]
英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步,在全球范围内实现了低 RDS(on)/封装,并且得益于其低开关损耗,可在全负载范围内提高效率。;型号: | IPA65R045C7 |
厂家: | Infineon |
描述: | 英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步,在全球范围内实现了低 RDS(on)/封装,并且得益于其低开关损耗,可在全负载范围内提高效率。 开关 |
文件: | 总14页 (文件大小:1153K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPA65R045C7
MOSFET
PG-TOꢀ220ꢀFP
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
CoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.ꢀTheꢀproductꢀportfolio
providesꢀallꢀbenefitsꢀofꢀfastꢀswitchingꢀsuperjunctionꢀMOSFETsꢀoffering
betterꢀefficiency,ꢀreducedꢀgateꢀcharge,ꢀeasyꢀimplementationꢀand
outstandingꢀreliability.
Features
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀBetterꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package
Drain
Pin 2
•ꢀEasyꢀtoꢀuse/drive
•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound
*1
Gate
Pin 1
Source
Pin 3
Benefits
*1: Internal body diode
•ꢀEnablingꢀhigherꢀsystemꢀefficiency
•ꢀEnablingꢀhigherꢀfrequencyꢀ/ꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀSystemꢀcostꢀ/ꢀsizeꢀsavingsꢀdueꢀtoꢀreducedꢀcoolingꢀrequirements
•ꢀHigherꢀsystemꢀreliabilityꢀdueꢀtoꢀlowerꢀoperatingꢀtemperatures
Potentialꢀapplications
PFCꢀstagesꢀandꢀhardꢀswitchingꢀPWMꢀstagesꢀforꢀe.g.ꢀComputing,ꢀServer,
Telecom,ꢀUPSꢀandꢀSolar.
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg.typ
Value
700
45
Unit
V
mΩ
nC
A
93
ID,pulse
212
11.7
60
Eoss@400V
Body diode di/dt
µJ
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TO 220 FullPAK
Marking
RelatedꢀLinks
IPA65R045C7
65C7045
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
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650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
18
11
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
212
249
1.25
12.0
100
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
mJ
A
ID=12A; VDD=50V; see table 10
-
ID=12A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
35
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
50
-
-
Operating junction temperature
Mounting torque
-
Ncm M2.5 screws
Continuous diode forward current
Diode pulse current2)
IS
-
18
A
A
TC=25°C
IS,pulse
-
212
TC=25°C
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt3)
dv/dt
-
-
1.5
V/ns
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
60
A/µs
VISO
2500
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
3
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650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.6
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
80
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
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Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3.5
4
VDS=VGS,ꢀID=1.25mA
-
-
-
20
2
-
VDS=650,ꢀVGS=0V,ꢀTj=25°C
VDS=650,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.040 0.045
0.096
VGS=10V,ꢀID=24.9A,ꢀTj=25°C
VGS=10V,ꢀID=24.9A,ꢀTj=150°C
RDS(on)
RG
-
-
0.85
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
4340
70
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
146
1630
20
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
14
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
82
VDD=400V,ꢀVGS=13ꢀV,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
7
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
23
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
30
Qg
93
Gate plateau voltage
Vplateau
5.4
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=24.9A,ꢀTj=25°C
VR=400V,ꢀIF=18A,ꢀdiF/dt=60A/µs;
see table 8
-
-
-
725
13
-
-
-
ns
VR=400V,ꢀIF=18A,ꢀdiF/dt=60A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=18A,ꢀdiF/dt=60A/µs;
see table 8
Peak reverse recovery current
36
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
40
103
1 µs
10 µs
100 µs
1 ms
35
30
25
20
15
10
5
102
10 ms
101
DC
100
10-1
10-2
10-3
10-4
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
100 µs
1 ms
102
10 ms
0.5
101
DC
100
0.2
100
10-1
10-2
10-3
10-4
10-5
0.1
0.05
0.02
10-1
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
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Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
250
140
20 V
10 V
20 V
10 V
8 V
7 V
120
100
80
60
40
20
0
200
150
100
50
8 V
6 V
7 V
5.5 V
6 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.17
0.12
5.5 V
6.5 V
7 V
6 V
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.11
0.10
0.09
0.08
20 V
10 V
0.07
98%
0.06
0.05
0.04
0.03
0.02
typ
0
20
40
60
80
100
120
140
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=24.9ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
250
12
120 V
400 V
10
8
25 °C
200
150
6
150 °C
100
4
50
0
2
0
0
2
4
6
8
10
12
0
20
40
60
80
100
120
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=24.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
250
225
200
175
150
125
100
75
125 °C
101
25 °C
100
50
25
10-1
0
0.0
0.5
1.0
1.5
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=12ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
760
105
740
720
700
680
660
640
620
600
580
104
Ciss
103
Coss
102
101
Crss
100
-60
-20
20
60
100
140
180
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
1
2
3
MILLIMETERS
MIN.
DIMENSIONS
MAX.
4.90
2.85
2.86
0.90
1.38
1.51
1.38
1.51
0.63
16.15
9.83
10.65
DOCUMENT NO.
Z8B00003319
A
A1
A2
b
4.50
2.34
2.42
0.65
0.95
0.95
0.65
0.65
0.40
15.67
8.97
10.00
REVISION
10
b1
b2
b3
b4
c
ISSUE DATE
21.03.2019
SCALE 5:1
0
1
2
3
4
5mm
D
D1
E
e
2.54
EUROPEAN PROJECTION
H
28.70
12.78
2.83
29.75
13.75
3.45
L
L1
øP
Q
3.00
3.30
3.15
3.50
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2020-01-29
650VꢀCoolMOSªꢀC7ꢀPowerꢀDevice
IPA65R045C7
RevisionꢀHistory
IPA65R045C7
Revision:ꢀ2020-01-29,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2013-10-18
2020-01-29
Updated package drawing, symbol ID and product validation
Trademarks
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2020-01-29
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