select brandShort,logo,brand from pdf_brand where id=10020 limit 1 IPB020N04NG_技术文档

IPB020N04NG [INFINEON]

OptiMOS3 Power-Transistor; OptiMOS3功率三极管
IPB020N04NG
型号: IPB020N04NG
厂家: Infineon    Infineon
描述:

OptiMOS3 Power-Transistor
OptiMOS3功率三极管

文件: 总9页 (文件大小:518K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IPB020N08N5

Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020N10N5

Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020N10N5ATMA1

Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020N10N5LF

OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R DS(on) )和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS(on)以及经典平面MOSFET的宽安全工作区。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020N10N5LFATMA1

Power Field-Effect Transistor, 29A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020NE7N3 G

75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具有极低的导通电阻和出色的开关性能。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020NE7N3G

OptiMOSTM3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB020NE7N3GATMA1

Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB021N04N

Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB021N06N3G

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB021N06N3GATMA1

Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB022N04LG

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB022N04LGATMA1

Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB023N04NF2S

Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.35 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB023N04NG

OptiMOS?3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB023N04NGATMA1

Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB023N06N3G

OptiMOS?3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB023N06N3GATMA1

Power Field-Effect Transistor, 140A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, D2PAK-7

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB024N08N5

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB024N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. 

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB024N08NF2S

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON