IPB020N04NG [INFINEON]
OptiMOS3 Power-Transistor; OptiMOS3功率三极管型号: | IPB020N04NG |
厂家: | Infineon |
描述: | OptiMOS3 Power-Transistor |
文件: | 总9页 (文件大小:518K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IPB020N08N5
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020N10N5
Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020N10N5ATMA1
Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020N10N5LF
OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R DS(on) )和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS(on)以及经典平面MOSFET的宽安全工作区。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020N10N5LFATMA1
Power Field-Effect Transistor, 29A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020NE7N3 G
75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具有极低的导通电阻和出色的开关性能。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020NE7N3G
OptiMOSTM3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB020NE7N3GATMA1
Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB021N04N
Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB021N06N3G
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB021N06N3GATMA1
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB022N04LG
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB022N04LGATMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB023N04NF2S
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.35 mOhm, addressing a broad range of applications from low- to high-switching frequency.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB023N04NG
OptiMOS?3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB023N04NGATMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB023N06N3G
OptiMOS?3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB023N06N3GATMA1
Power Field-Effect Transistor, 140A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, D2PAK-7Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB024N08N5
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB024N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB024N08NF2S
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
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