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IPB048N15N5 [INFINEON]

英飞凌推出的 OptiMOS™5 150V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。产品突破性地降低了 R DS(on)（与 SuperSO8 中的下一个理想替代品相比高达 25％）和 Q rr，而不影响 FOM gd 和 FOM OSS，从而在优化系统效率的同时有效减少设计工作量。此外，超低反向恢复电荷（在 SuperSO8 中，Q rr = 26 nC）提高了换流坚固性。;
IPB048N15N5
型号： IPB048N15N5
厂家： Infineon    Infineon
描述：

英飞凌推出的 OptiMOS™5 150V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。产品突破性地降低了 R DS(on)（与 SuperSO8 中的下一个理想替代品相比高达 25％）和 Q rr，而不影响 FOM gd 和 FOM OSS，从而在优化系统效率的同时有效减少设计工作量。此外，超低反向恢复电荷（在 SuperSO8 中，Q rr = 26 nC）提高了换流坚固性。

通信 驱动 开关 脉冲 晶体管 驱动器
文件： 总11页 (文件大小：1005K)
中文：  中文翻译
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IPB048N15N5  
MOSFET  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
D²PAK  
Features  
tab  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication  
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
1
3
Drain  
Pin 2, Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
150  
4.8  
Unit  
VDS  
V
Gate  
Pin 1  
RDS(on),maxꢀ(TO263)  
mΩ  
A
Source  
Pin 3  
ID  
120  
83  
Qrr  
nC  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPB048N15N5  
PG-TO 263-3  
048N15N5  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
120  
118  
TC=25ꢀ°C  
A
Continuous drain current  
ID  
TC=100ꢀ°C  
Pulsed drain current1)  
Avalanche energy, single pulse2)  
Gate source voltage  
ID,pulse  
EAS  
-
-
-
-
-
480  
230  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=100ꢀA,ꢀRGS=25ꢀΩ  
VGS  
Ptot  
-20  
-
-
Power dissipation  
300  
W
TC=25ꢀ°C  
IEC climatic category;  
DIN IEC 68-1: 55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
0.3  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.5  
K/W  
K/W  
-
-
Thermal resistance, junction - ambient,  
minimal footprint  
-
-
-
-
62  
40  
Thermal resistance, junction - ambient,  
6 cm2 cooling area3)  
RthJA  
K/W  
-
1) See Diagram 3  
2) See Diagram 13  
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
150  
3.0  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
3.8  
4.6  
VDS=VGS,ꢀID=264ꢀµA  
-
-
0.1  
10  
1
100  
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
1
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
3.7  
4.0  
4.8  
5.2  
VGS=10ꢀV,ꢀID=60ꢀA  
VGS=8ꢀV,ꢀID=30ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
1.1  
1.6  
-
Ω
-
59  
117  
S
|VDS|>2|ID|RDS(on)max,ꢀID=60ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
6000 7800 pF  
1500 1950 pF  
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz  
34  
60  
-
pF  
ns  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=60ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
19.6  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=60ꢀA,  
RG,ext=1.6ꢀΩ  
5.3  
-
-
-
ns  
ns  
ns  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=60ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
25.5  
4.5  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=60ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
33  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge1)  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Output charge1)  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=75ꢀV,ꢀID=60ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=60ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=60ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=60ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=60ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀVGS=0ꢀV  
Qgd  
16  
24  
-
Qsw  
Qg  
26  
80  
100  
-
Vplateau  
Qoss  
5.4  
225  
299  
nC  
1) Defined by design. Not subject to production test  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
120  
480  
1.1  
Diode continous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.85  
60  
83  
V
VGS=0ꢀV,ꢀIF=60ꢀA,ꢀTj=25ꢀ°C  
VR=75ꢀV,ꢀIF=60,ꢀdiF/dt=100ꢀA/µs  
VR=75ꢀV,ꢀIF=60,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
120  
166  
ns  
nC  
Qrr  
1) Defined by design. Not subject to production test  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
320  
140  
280  
240  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
40  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
10 µs  
100 µs  
102  
101  
100  
10-1  
0.5  
1 ms  
10 ms  
DC  
0.2  
10-1  
0.1  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
600  
10  
10 V  
9
500  
5.5 V  
8 V  
8
7
6 V  
400  
7 V  
6
5
4
3
2
1
0
8 V  
7 V  
300  
10 V  
200  
6 V  
100  
5.5 V  
5 V  
0
0
1
2
3
4
5
0
100  
200  
300  
400  
500  
600  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
400  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
60  
40  
50  
20  
175 °C  
25 °C  
0
0
0
2
4
6
8
0
40  
80  
120  
160  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
12  
4.5  
11  
10  
9
4.0  
2640 µA  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
264 µA  
8
7
max  
6
5
typ  
4
3
2
1
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=60ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
Ciss  
25 °C  
175 °C  
25°C max  
175°C max  
103  
102  
101  
100  
Coss  
102  
101  
100  
Crss  
0
20  
40  
60  
80  
100  
120  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
8
75 V  
120 V  
30 V  
102  
6
4
2
0
25 °C  
100 °C  
125 °C  
101  
100  
100  
101  
102  
103  
0
20  
40  
60  
80  
100  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=60ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
170  
165  
160  
155  
150  
145  
140  
135  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2018-04-20  
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV  
IPB048N15N5  
RevisionꢀHistory  
IPB048N15N5  
Revision:ꢀ2018-04-20,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2016-02-05  
2018-04-20  
Update trr, Qrr, tf and td(off)  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
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pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2018-04-20  

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