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IPB083N15N5LF [INFINEON]

OptiMOS™线性FET是一种全新方法，实现了增强型MOSFET饱和区域内的导通电阻（R DS（on） ）和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS（on）以及经典平面MOSFET的宽安全工作区。;
IPB083N15N5LF
型号： IPB083N15N5LF
厂家： Infineon    Infineon
描述：

OptiMOS™线性FET是一种全新方法，实现了增强型MOSFET饱和区域内的导通电阻（R DS（on） ）和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS（on）以及经典平面MOSFET的宽安全工作区。

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IPB083N15N5LF  
MOSFET  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
D²PAK  
Features  
tab  
•ꢀIdealꢀforꢀhot-swapꢀandꢀe-fuseꢀapplications  
•ꢀVeryꢀlowꢀon-resistanceꢀꢀRDS(on)  
•ꢀWideꢀsafeꢀoperatingꢀareaꢀSOA  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
1
3
Drain  
Pin 2, Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
150  
V
Gate  
Pin 1  
RDS(on),max  
ID  
8.3  
mΩ  
A
Source  
Pin 3  
105  
Ipulseꢀ(VDS=56ꢀV,ꢀtp=10  
ms)  
5.6  
A
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPB083N15N5LF  
PG-TO263-3  
083N15LF  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTC=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
105  
66  
14  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTC=25ꢀ°C,ꢀRthJAꢀ=40ꢀK/W1)  
Pulsed drain current2)  
Avalanche energy, single pulse3)  
Gate source voltage  
ID,pulse  
EAS  
-
-
-
-
-
420  
10  
A
TC=25ꢀ°C  
-
mJ  
V
ID=25ꢀA,ꢀRGS=25ꢀΩ  
VGS  
Ptot  
-20  
-
20  
-
Power dissipation  
179  
W
TC=25ꢀ°C  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.45  
0.7  
K/W  
K/W  
-
-
Device on PCB,  
minimal footprint  
-
-
-
-
62  
40  
Device on PCB,  
RthJA  
K/W  
-
6 cm² cooling area1)  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See Diagram 3 for more detailed information  
3) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
150  
3.3  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
4.1  
4.9  
VDS=VGS,ꢀID=134ꢀµA  
-
-
1
10  
2
100  
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
IDSS  
IGSS  
µA  
µA  
-
-
2
-2  
5
-5  
VGS=20ꢀV,ꢀVDS=0ꢀV  
VGS=-10ꢀV,ꢀVDS=0ꢀV  
Drain-source on-state resistance  
Gate resistance1)  
RDS(on)  
RG  
-
6.9  
28  
18  
8.3  
42  
-
mΩ VGS=10ꢀV,ꢀID=100ꢀA  
-
Ω
-
Transconductance  
gfs  
9
S
|VDS|>2|ID|RDS(on)max,ꢀID=52ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ  
Values  
Typ.  
160  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
210  
960  
-
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
740  
Reverse transfer capacitance  
11  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=52ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
7
-
-
-
-
ns  
ns  
ns  
ns  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=52ꢀA,  
RG,ext=1.6ꢀΩ  
46  
25  
6
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=52ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=52ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
1.2  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge1)  
Gate charge total1)  
Gate plateau voltage  
Output charge1)  
Qgs  
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=75ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=75ꢀV,ꢀVGS=0ꢀV  
Qgd  
31  
-
Qg  
45  
-
Vplateau  
Qoss  
6.6  
-
111  
148  
nC  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
105  
420  
1.2  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.99  
61  
92  
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C  
VR=75ꢀV,ꢀIF=52ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=75ꢀV,ꢀIF=52ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
Qrr  
-
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
200  
120  
175  
150  
125  
100  
75  
100  
80  
60  
40  
20  
0
50  
25  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
10 µs  
0.5  
0.2  
100 µs  
102  
10 ms  
1 ms  
DC  
10-1  
0.1  
101  
0.05  
0.02  
0.01  
single pulse  
100  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
30  
10  
25  
8
6
4
2
0
10V  
8 V  
20  
15  
10  
5
10 V  
7V  
6V  
5.5V  
5V  
0
0
1
2
3
4
5
0
5
10  
15  
20  
25  
30  
35  
40  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
20  
14  
12  
10  
8
15  
10  
5
6
4
150 °C  
2
25 °C  
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS),ꢀVDS=10V;ꢀparameter:ꢀTj  
gfs=f(ID),ꢀVDS=5ꢀV,ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.00  
5
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
4
3
2
1
0
1340 µA  
134 µA  
-80  
-40  
0
40  
80  
120  
160  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=52ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
150 °C  
150 °C, max  
Coss  
103  
102  
101  
100  
Ciss  
102  
Crss  
101  
0
25  
50  
75  
100  
125  
150  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
10  
8
75V  
30V  
120V  
101  
6
100 °C  
25 °C  
100  
4
2
125 °C  
10-1  
0
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate);ꢀID=52ꢀAꢀpulsed,ꢀresistiveꢀload;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
160  
158  
156  
154  
152  
150  
148  
146  
144  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2022-09-09  
OptiMOSTMꢀ5ꢀLinearꢀFET,ꢀ150ꢀV  
IPB083N15N5LF  
RevisionꢀHistory  
IPB083N15N5LF  
Revision:ꢀ2022-09-09,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
Update legend Diagram 7  
2017-04-04  
2022-09-09  
Trademarks  
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productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2022-09-09  

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