IPB160N04S4LH1ATMA1 [INFINEON]
Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,;
| 型号： | IPB160N04S4LH1ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
IPB160N04S4L-H1
OptiMOSTM-T2 Power-Transistor
Product Summary
VDS
RDS(on)
ID
40
1.5
160
V
mΩ
A
Features
• N-channel Logic Level - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB160N04S4L-H1
PG-TO263-7-3
4N04LH1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, VGS=10V1)
I D
Continuous drain current
160
160
A
T C=100 °C,
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
640
400
I D=80 A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
160
VGS
Ptot
-
+20/-16
167
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2013-05-27
Data Sheet
Conditions
IPB160N04S4L-H1
Values
Parameter
Symbol
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
0.9
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D= 1 mA
VGS(th) VDS=VGS, I D=110 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.7
2.2
VDS=40 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.05
1
1
µA
V
DS=18 V, VGS=0 V,
20
T j=85 °C2)
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=4.5 V, I D=50 A
Drain-source on-state resistance
1.6
1.2
2.0
1.5
mΩ
V
GS=10 V, I D=100 A
Rev. 1.0
page 2
2013-05-27
Data Sheet
Conditions
IPB160N04S4L-H1
Values
Parameter
Symbol
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
11500
1920
100
16
14950 pF
2500
V
GS=0 V, VDS=25 V,
f =1 MHz
230
-
-
-
-
ns
20
V
DD=20 V, VGS=10 V,
I D=160 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
70
65
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
34
16
44
37
190
-
nC
Q gd
VDD=32 V, I D=160 A,
GS=0 to 10 V
V
Q g
146
3.0
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
160
640
T C=25 °C
I S,pulse
VGS=0 V, I F=100 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
60
80
-
-
ns
VR=20 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by bondwire; with an R thJC = 0.9 K/W the chip is able to carry 250A at 25°C.
2) Defined by design. Not subject to production test.
Rev. 1.0
page 3
2013-05-27
Data Sheet
IPB160N04S4L-H1
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
200
175
150
125
100
75
180
160
140
120
100
80
60
50
40
25
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
100
10
1 µs
0.5
10 µs
100 µs
0.1
10-1
0.05
0.01
1 ms
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2013-05-27
Data Sheet
IPB160N04S4L-H1
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
12
640
3 V
4.5 V
10 V
3.5 V
4 V
10
8
480
320
160
0
4 V
6
3.5 V
4
4.5 V
2
10 V
3 V
0
0
100
200
300
400
500
600
0
1
2
3
4
5
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; VGS = 10 V
640
480
320
160
0
2.5
25 °C
-55 °C
175 °C
2
1.5
1
0.5
-60
-20
20
60
100
140
180
1
2
3
4
5
Tj [°C]
VGS [V]
Rev. 1.0
page 5
2013-05-27
Data Sheet
IPB160N04S4L-H1
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
105
104
103
102
101
2
1100 µA
Ciss
1.5
110 µA
Coss
1
Crss
0.5
0
0
5
10
15
20
25
30
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
100 °C
150 °C
25 °C
175 °C
101
10
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2013-05-27
Data Sheet
IPB160N04S4L-H1
13 Typical avalanche energy
AS = f(T j)
14 Drain-source breakdown voltage
E
VBR(DSS) = f(T j); I D = 1 mA
parameter: I D
46
44
42
40
38
36
875
40 A
750
625
500
80 A
375
250
160 A
125
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V
GS = f(Q gate); I D = 160 A pulsed
parameter: VDD
12
VGS
10
8
Qg
8 V
32 V
6
4
Qgate
2
Qgd
Qgs
0
0
20
40
60
80
100
120
Qgate [nC]
Rev. 1.0
page 7
2013-05-27
Data Sheet
IPB160N04S4L-H1
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2013
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2013-05-27
Data Sheet
IPB160N04S4L-H1
Revision History
Version
Date
Changes
27.05.2013 Data Sheet
Revision 1.0
Rev. 1.0
page 9
2013-05-27
相关型号：
IPB160N08S4-03
Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
INFINEON
IPB160N08S403ATMA1
Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
INFINEON
IPB180N03S4L-01
180A, 30V, 0.00105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, GREEN, PLASTIC PACKAGE-7
ROCHESTER
IPB180N03S4L01ATMA1
Power Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
INFINEON
©2020 ICPDF网 联系我们和版权申明