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元器件品牌
IPB26CNE8NG
[INFINEON]
OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管
元器件型号:
IPB26CNE8NG
生产厂家:
INFINEON TECHNOLOGIES AG
描述和应用:
OptiMOS㈢2 Power-Transistor
OptiMOS®2功率三极管
PDF文件:
总13页 (文件大小:648K)
下载文档:
下载PDF数据表文档文件
型号参数:IPB26CNE8NG参数
查看货源
IPB320N20N3G
OptiMOSTM3 Power-Transistor Features N-channel, normal level
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58
INFINEON
IPB320N20N3G
OptiMOS3 Power Transistor
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156
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IPB320N20N3G_10
OptiMOS3 Power Transistor
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156
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9
INFINEON
IPB34CN10NG
Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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0
INFINEON
IPB34CN10NGATMA1
Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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156
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0
INFINEON
IPB35CN10NG
OptiMOS2 Power-Transistor
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156
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27
INFINEON
IPB35CN10NG
OptiMOS㈢2 Power-Transistor
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156
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43
INFINEON
IPB35N10S3L-26
OptiMOSâ¢-T Power-Transistor
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156
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0
INFINEON
IPB35N10S3L-26
Material Content Data Sheet
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1
INFINEON
IPB35N10S3L-26_12
OptiMOSâ¢-T Power-Transistor
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0
INFINEON
IPB35N10S3L-26_15
Material Content Data Sheet
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0
INFINEON
IPB35N10S3L26ATMA1
Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
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0
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IPB407N30N
Metal Oxide Semiconductor Field Effect Transistor
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156
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2
INFINEON
IPB407N30N_15
Metal Oxide Semiconductor Field Effect Transistor
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156
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0
INFINEON
IPB45N04S4L-08
OptiMOS-T2 Power-Transistor
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156
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34
INFINEON
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