IPB320N20N3 G [INFINEON]
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。;
| 型号： | IPB320N20N3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。 电机 驱动 转换器 |
| 文件： | 总11页 (文件大小：419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
V DS
200
32
V
• N-channel, normal level
R DS(on),max
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
34
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB320N20N3 G
IPP320N20N3 G
IPI320N20N3 G
Package
Marking
PG-TO263-3
320N20N
PG-TO220-3
320N20N
PG-TO262-3
320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
34
22
A
Pulsed drain current2)
I D,pulse
E AS
136
190
I D=34 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
Reverse diode dv /dt
dv /dt
10
kV/µs
V GS
Gate source voltage
±20
V
P tot
T C=25 °C
Power dissipation
136
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.3
page 1
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
1.1
62
40
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
200
2
-
-
V
V GS(th)
V DS=V GS, I D=90 µA
3
4
V DS=160 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V
DS=160 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=34 A
28
2.5
32
-
mΩ
R G
Ω
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
27
54
-
S
I D=34 A
2
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1770
135
4
2350 pF
V GS=0 V, V DS=100 V,
C oss
C rss
t d(on)
t r
180
-
f =1 MHz
11
9
-
-
-
-
ns
V DD=100 V,
V
GS=10 V, I D=17 A,
t d(off)
t f
Turn-off delay time
Fall time
21
4
R G=1.6 Ω
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
8
3
-
-
nC
Q gd
V DD=100 V, I D=17 A,
Q sw
Q g
5
-
V
GS=0 to 10 V
Gate charge total
22
4.4
54
29
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=100 V, V GS=0 V
72
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
34
A
T C=25 °C
I S,pulse
136
V GS=0 V, I F=34 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
V
t rr
Reverse recovery time
-
-
110
500
-
-
ns
V R=100 V, I F=17 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
160
140
120
100
80
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
102
101
100
10-1
1 µs
10 µs
100
100 µs
0.5
1 ms
0.2
0.1
10 ms
DC
10-1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
V DS [V]
102
103
t p [s]
Rev. 2.3
page 4
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
60
60
10 V
7 V
50
50
4.5 V
5 V
5 V
40
30
20
10
0
40
30
20
10
0
7 V
10 V
4.5 V
0
1
2
3
4
5
0
10
20
30
40
50
60
70
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
50
40
30
20
80
70
60
50
40
30
20
10
0
175 °C
10
25 °C
0
0
2
4
6
8
0
25
50
75
ID [A]
V GS [V]
Rev. 2.3
page 5
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=34 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
100
4
3.5
3
80
60
900 µA
90 µA
2.5
2
98%
40
1.5
1
typ
20
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
102
101
102
25 °C
Coss
175 °C
25°C, 98%
101
175°C, 98%
Crss
100
0
0.5
1
1.5
2
0
40
80
120
160
V SD [V]
V DS [V]
Rev. 2.3
page 6
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=17 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
8
6
4
2
160 V
25 °C
100 V
100 °C
40 V
125 °C
10
1
1
0
0
10
100
1000
5
10
15
20
25
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
230
V GS
Q g
220
210
200
190
180
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.3
page 7
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO220-3: Outline
Rev. 2.3
page 8
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO263-3: Outline
Rev. 2.3
page 9
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
PG-TO262-3: Outline
Rev. 2.3
page 10
2011-05-20
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 11
2011-05-20
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