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IPB65R110CFD7

更新时间：2024-10-30 05:41:11

品牌：INFINEON

描述：英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPB65R110CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R110CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。

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IPB65R110CFD7 概述

英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPB65R110CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R110CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。

IPB65R110CFD7 数据手册

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IPB65R110CFD7

MOSFET

D²PAK

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof

theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.

Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal

behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant

switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs

partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends

allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard

commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets

highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh

powerꢀdensityꢀsolutions.

tab

Features

Drain

Pin 2, Tab

•ꢀUltra-fastꢀbodyꢀdiode

•ꢀ650Vꢀbreakꢀdownꢀvoltage

•ꢀBest-in-classꢀR_DS(on)

Gate

Pin 1

•ꢀReducedꢀswitchingꢀlosses

•ꢀLowꢀR_DS(on)ꢀdependencyꢀoverꢀtemperature

Source

Pin 3

*1: Internal body diode

*2: Integrated ESD diode

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications

•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications

•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies

Potentialꢀapplications

SuitableꢀforꢀSoftꢀSwitchingꢀtopologies

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging,ꢀSolar

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

700

110

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

5.8

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPB65R110CFD7

PG-TO263-3

65R110F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=4.7A; V_DD=50V; see table 10

0.48

4.7

120

I_D=4.7A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

114

150

°C

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current¹⁾

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=9.7A,ꢀT_j=25°Cꢀꢀꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=9.7A,ꢀT_j=25°Cꢀꢀꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

1300 A/µs

n.a.

see table 8

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

1.1

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W device on PCB, minimal footprint

Device on 40mm*40mm*1.5mm

epoxy PCB FR4 with 6cm² (one

Thermal resistance, junction - ambient

for SMD version

layer, 70µm thickness) copper area

for drain connection and cooling.

PCB is vertical without air stream

cooling.

R_thJA

°C/W

Soldering temperature, wavesoldering

only allowed at leads

T_sold

260

°C

reflow MSL1

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

650

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.5

V_DS=V_GS,ꢀI_D=0.48mA

V_DS=650V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=650V,ꢀV_GS=0V,ꢀT_j=125°C

Zero gate voltage drain current¹⁾

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

I_GSS

1000 nA

V_GS=20V,ꢀV_DS=0V

0.088 0.110

0.194

V_GS=10V,ꢀI_D=9.7A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=9.7A,ꢀT_j=150°C

R_DS(on)

R_G

Ω

6.0

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

1942

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related²⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

751

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related³⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=9.7A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=9.7A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=9.7A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DD=400V,ꢀV_GS=13V,ꢀI_D=9.7A,

R_G=1.8Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=400V,ꢀI_D=9.7A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.7

¹⁾Maximum specification is defined by calculated six sigma upper confidence bound

²⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

³⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.0

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=9.7A,ꢀT_j=25°C

V_R=400V,ꢀI_F=9.7A,ꢀdi_F/dt=100A/µs;

see table 8

110

0.56

8.7

165

1.12

V_R=400V,ꢀI_F=9.7A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=9.7A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

125

10²

1 µs

10 µs

100

10¹

10⁰

100 µs

1 ms

10^-1

10^-2

10^-3

10 ms

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10²

10¹

1 µs

10 µs

10¹

10⁰

100 µs

0.5

0.2

0.1

1 ms

10^-1

10^-2

10^-3

10^-1

0.05

0.02

10 ms

0.01

single pulse

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

150

100

20 V

10 V

20 V

10 V

8 V

120

8 V

7 V

6 V

5.5 V

6 V

5 V

4.5 V

5.5 V

4.5 V

5 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.260

2.5

5.5 V

6.5 V

7 V

6 V

0.240

0.220

0.200

0.180

0.160

2.0

1.5

1.0

0.5

20 V

10 V

100

-50

-25

100

125

150

I_Dꢀ[A]

T_jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=9.7ꢀA;ꢀV_GS=10ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

200

400 V

120 V

150

25 °C

100

150 °C

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=9.7ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀAvalancheꢀenergy

10²

100

10¹

10⁰

10^-1

12255°C°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

125

150

V_SDꢀ[V]

T_jꢀ[°C]

I_F=f(V_SD);ꢀparameter:ꢀT_j

E_AS=f(T_j);ꢀI_D=4.7ꢀA;ꢀV_DD=50ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagramꢀ14:ꢀTyp.ꢀcapacitances

730

10⁵

10⁴

700

670

640

610

580

Ciss

10³

10²

10¹

10⁰

10^-1

Coss

Crss

-50

-25

100

125

150

100

200

300

400

500

T_jꢀ[°C]

V_DSꢀ[V]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy

100

200

300

400

500

V_DSꢀ[V]

E_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics

Test circuit for diode characteristics

Diode recovery waveform

R_g1

V_DS

R_g2

I_F

R_g1 = R_g2

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

6ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm/inches

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolMOSꢀCFD7ꢀ650VꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolMOSꢀCFD7ꢀ650Vꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPB65R110CFD7

RevisionꢀHistory

IPB65R110CFD7

Revision:ꢀ2020-10-21,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2020-10-21

Trademarks

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Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2020-10-21

IPB65R110CFD7 相关器件

型号	制造商	描述	价格	文档
IPB65R110CFDA	INFINEON	Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2	获取价格
IPB65R115CFD7A	INFINEON	D2PAK 3 引脚封装中的 115mOhm IPB65R115CFD7A 是汽车级认证 650V CoolMOS? SJ 功率?MOSFET CFD7A?系列中的一款产品。与上一代产品相比，CoolMOS? CFD7A?具有更高的可靠性和功率密度，同时增强了设计灵活性。	获取价格
IPB65R125C7	INFINEON	英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。	获取价格
IPB65R125CFD7	INFINEON	英飞凌 650V CoolMOS? CFD7 超结 MOSFET IPB65R125CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R125CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。	获取价格
IPB65R145CFD7A	INFINEON	D2PAK 3 引脚封装中的 145 mOhm IPB65R145CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。	获取价格
IPB65R150CFD	INFINEON	650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7	获取价格
IPB65R150CFDA	INFINEON	650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。	获取价格
IPB65R150CFDAATMA1	INFINEON	Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2	获取价格
IPB65R150CFDATMA1	INFINEON	Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3	获取价格
IPB65R155CFD7	INFINEON	英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPB65R155CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R155CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。	获取价格