IPB65R660CFDA [INFINEON]
650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。;
| 型号： | IPB65R660CFDA |
| 厂家： | 
Infineon |
| 描述： | 650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。 高压 开关 脉冲 晶体管 二极管 |
| 文件： | 总14页 (文件大小：1977K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB65R660CFDA,ꢀIPP65R660CFDA
MOSFET
D²PAK
PG-TOꢀ220
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀ650VꢀCoolMOS™ꢀCFDAꢀseries
combinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhigh
classꢀinnovation.ꢀTheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSJꢀMOSFETꢀwhileꢀofferingꢀanꢀextremelyꢀfastꢀandꢀrobustꢀbody
diode.ꢀThisꢀcombinationꢀofꢀextremelyꢀlowꢀswitching,ꢀcommutationꢀand
conductionꢀlossesꢀtogetherꢀwithꢀhighestꢀrobustnessꢀmakeꢀespecially
resonantꢀswitchingꢀapplicationsꢀmoreꢀreliable,ꢀmoreꢀefficient,ꢀlighter,ꢀand
cooler.
2
1
3
Drain
Pin 2
Gate
Pin 1
Features
•ꢀUltra-fastꢀbodyꢀdiode
Source
Pin 3
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀEasyꢀtoꢀuse/drive
•ꢀQualifiedꢀaccordingꢀtoꢀAECꢀQ101
•ꢀGreenꢀpackageꢀ(RoHSꢀcompliant),ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀforꢀmold
compound
Potentialꢀapplications
650VꢀCoolMOS™ꢀCFDAꢀisꢀdesignedꢀforꢀswitchingꢀapplications.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
650
0.66
20
Unit
VDS
V
RDS(on),max
Qg,typ
Ω
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
17
1.8
µJ
A/µs
µC
ns
A
900
0.2
trr
65
Irrm
4.5
Typeꢀ/ꢀOrderingꢀCode
IPB65R660CFDA
Package
Marking
RelatedꢀLinks
PG-TO 263-3
PG-TO 220-3
65F6660A
-
IPP65R660CFDA
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
6
Continuous drain current1)
IꢀD
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
TCꢀ=ꢀ25°C
3.8
17
Pulsed drain current2)
IꢀD‚pulse
A
IDꢀ=ꢀ1.2A,ꢀVDDꢀ=ꢀ50V
(see table 11)
Avalanche energy, single pulse
EAS
115
mJ
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
EAR
IꢀAR
0.21
1.2
50
mJ
A
IDꢀ=ꢀ1.2A,ꢀVDDꢀ=ꢀ50V
dv/dt
VGS
V/ns VDSꢀ=ꢀ0ꢀ...ꢀ400V
-20
-30
20
V
static
30
AC (f > 1 Hz)
Power dissipation (non FullPAK, SMD)
PG-TO 220, D²PAK
Ptot
62.5
150
70
W
TCꢀ=ꢀ25°C
Operating and storage temperature
Tj‚Tstg
-40
°C
Mounting torque (non FullPAK)
PG-TO 220
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt3)
IꢀS
6
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ25°C
IꢀS‚pulse
dv/dt
dif/dt
17
50
900
A
V/ns
A/µs
VDSꢀ=ꢀ0ꢀ...ꢀ400V,ꢀISDꢀ≤ꢀID,
Tjꢀ=ꢀ25°C
(see table 9)
Maximum diode commutation speed
1) Limited by Tj max
.
2) Pulse width tp limited by Tj max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀPG-TOꢀ220
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
2
Thermal resistance, junction - case
RthJC
K/W
Thermal resistance, junction - ambient RthJA
62
K/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀD²PAK
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
2
K/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1) RthJA
62
K/W
SMD version, device on PCB, 6cm²
cooling area
35
Soldering temperature, wave- &
Tsold
260
°C
reflow MSL
reflowsoldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Max.
Drain-source breakdown voltage1)
Gate threshold voltage
V(BR)DSS
VGS(th)
IꢀDSS
V
VGSꢀ=ꢀ0V,ꢀIDꢀ=ꢀ1mA
4
4.5
1
V
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ0.2mA
Zero gate voltage drain current
µA
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ25°C
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ150°C
VGSꢀ=ꢀ20V,ꢀVDSꢀ=ꢀ0V
100
Gate-source leakage current
IꢀGSS
100
nA
Drain-source on-state resistance
RDS(on)
0.594 0.66
1.544
Ω
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.2A,ꢀTjꢀ=ꢀ25°C
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ3.2A,ꢀTjꢀ=ꢀ150°C
fꢀ=ꢀ1MHz,ꢀopenꢀdrain
Gate resistance
RG
6.5
Ω
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
543
32
Max.
Input capacitance
Output capacitance
Ciss
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ100V,ꢀfꢀ=ꢀ1MHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
24
97
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ0ꢀ...ꢀ400V
Effective output capacitance, time
related3)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0V,
VDSꢀ=ꢀ0ꢀ...ꢀ400V
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
9
ns
ns
ns
ns
VDDꢀ=ꢀ400V,ꢀVGSꢀ=ꢀ13V,ꢀIDꢀ=ꢀ3.2A,
RGꢀ=ꢀ6.8Ω
(see table 10)
8
Turn-off delay time
Fall time
40
10
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
3.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
nC
nC
nC
V
VDDꢀ=ꢀ480V,ꢀIDꢀ=ꢀ3.2A,
VGSꢀ=ꢀ0ꢀtoꢀ10V
Qgd
11
Qg
20
Gate plateau voltage
Vplateau
6.4
1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate
the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales
office.
2)
C
C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
o(er)
3)
o(tr)
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
V
VGSꢀ=ꢀ0V,ꢀIFꢀ=ꢀ3.2A,ꢀTjꢀ=ꢀ25°C
Reverse recovery time
65
ns
µC
A
VRꢀ=ꢀ400V,ꢀIFꢀ=ꢀ3.2A,
diF/dtꢀ=ꢀ100A/µs
(see table 9)
Reverse recovery charge
Peak reverse recovery current
Qrr
Iꢀrrm
0.2
4.5
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Max.ꢀtransientꢀthermalꢀimpedance
Typ.ꢀoutputꢀcharacteristics
101
20
20 V
18
10 V
8 V
16
7 V
14
100
6 V
12
5.5 V
0.5
0.2
0.1
5 V
10
4.5 V
8
10-1
0.05
6
4
2
0
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
tpꢀ[s]
VDSꢀ[V]
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Typ.ꢀoutputꢀcharacteristics
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
20
3.0
20 V
18
10 V
8 V
16
2.5
7 V
5 V 5.5 V
7 V
14
6 V
12
5.5 V
5 V
10
2.0
1.5
1.0
6 V
6.5 V
4.5 V
8
10 V
6
4
2
0
0
5
10
15
20
0.5
2.5
4.5
6.5
8.5
10.5
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Powerꢀdissipation
Safeꢀoperatingꢀarea
80
102
70
60
50
40
30
20
10
0
1 µs
10 µs
100 µs
1 ms
101
10 ms
100
10-1
10-2
100
0
50
100
150
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;forꢀVgs>7.5V;ꢀparameter:ꢀtp
Safeꢀoperatingꢀarea
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
102
2.0
101
1.5
1.0
1 µs
10 µs
100 µs
10 ms
1 ms
100
typ
10-1
0.5
10-2
100
0.0
101
102
103
-60
-20
20
60
100
140
180
VDSꢀ[V]
Tjꢀ[°C]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀforꢀVgs>7.5V;ꢀparameter:ꢀD=tp/T
RDS(on)=f(Tj);ꢀID=3.2ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Typ.ꢀtransferꢀcharacteristics
Typ.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
18
102
150 °C
125 °C
16
14
12
10
8
25 °C
25 °C
101
6
100
4
2
0
10-1
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
VGSꢀ[V]
VSDꢀ[V]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
IF=f(VSD);ꢀparameter:ꢀTj
Typ.ꢀgateꢀcharge
Avalancheꢀenergy
10
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
9
8
7
6
5
4
3
2
1
0
120 V
480 V
0
5
10
15
20
25
25
50
75
100
125
150
Qgateꢀ[nC]
Tjꢀ[°C]
VGS=f(Qgate);ꢀID=19.2ꢀAꢀpulsed;ꢀparameter:ꢀVDD
EAS=f(Tj);ꢀID=6.6ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Drain-sourceꢀbreakdownꢀvoltage
Typ.ꢀcapacitances
760
105
Ciss
740
720
700
680
660
640
620
600
580
560
540
Coss
104
Crss
103
102
101
100
-40
0
40
80
120
160
0
100
200
300
400
500
600
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=0.25ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Typ.ꢀCossꢀstoredꢀenergy
4
3
2
1
0
0
100
200
300
400
500
600
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ9ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.3,ꢀꢀ2017-11-27
650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor
IPB65R660CFDA,ꢀIPP65R660CFDA
RevisionꢀHistory
IPB65R660CFDA, IPP65R660CFDA
Revision:ꢀ2017-11-27,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
Final datasheet
2.0
2.1
2.2
2.3
2012-03-28
2014-11-19
2016-12-19
2017-11-27
Correction of Markingcode
Updated: SOA diagrams, Mounting torque, Correction Diagram R ds(on) vs. Tj.
Correction of Marking Code
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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deviceꢀorꢀsystem,ꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀareꢀintended
toꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbody,ꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.
Ifꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.3,ꢀꢀ2017-11-27
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